• The Transactions of the Korea Information Processing Society
• /
• v.7 no.7
• /
• pp.2254-2263
• /
• 2000

This paper proposes an efficient predictive image-compression technique based on vector quantization of blocks of pels. In the proposed method edge contents of blocks control the selection of predictors and block shapes as well. The maximum number of bits assigned to quantizers has been in creased to 3bits/pel from 1/5bits/pel, the setting employed by forerunners in predictive vector quantization of images. This increase prevents the saturation in SNR observed in their results in high bit rates. The variable block shape is instrumental in eh reconstruction of edges. The adaptive procedure is controlled by means of he standard deviation ofp rediction errors generated by a default predictor; the standard deviation address a decision table which can be set up beforehand. eh proposed method is characterized by overall improvements in image quality over A-VQ-PE and A-DCT VQ, both of which are known for their efficient use of vector quantizers.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.10 s.352
• /
• pp.61-67
• /
• 2006

We developed a constant current source which is insensitive to threshold voltage variation caused by irregular grain boundary distribution in polycrystalline silicon. The proposed current source has superior saturation characteristics over wide range of input voltages as well as small current error compared to the previously reported Vth compensated sources. We measured the circuit performance and error in current due to parameter variation by using HSPICE.

• The Transactions of the Korean Institute of Electrical Engineers B
• /
• v.51 no.4
• /
• pp.195-202
• /
• 2002

The high performance position controller named 'Unified PID Position Controller'is presented in part 1 of this paper. In part 2, we provide smart gain adjustment methods including the freedom utilizations for rare sensitivity toward the system parameter variation and for increasing the stiffness of the system. Owing to the provided gain tuning strategy, the overall system characteristics can be stabilized without over-shoot phenomena when the system parameter is changed in the rate of from 0.5 to 2∼4. Moreover, for the actual feasibility to the industrial fields, a simple butt effective anti-windup strategy prohibiting the integral component of the PID position controller from saturation is presented too. All of the presented algorithms are verified through the experiment works with commercial linear motor.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1346-1348
• /
• 2001

Generally, Invar alloy shows very low thermal expansion characteristics, lower than $2{\times}10^{-6}$/K approximately. To apply Fe-Ni-Co-C Invar alloy as a core material for large ampacity transmission line we studied the effects of magnetic properties on coefficient of thermal expansion. The coefficient of thermal expansion(CTE) suddenly decreases with addition of a little carbon(0.08%), increases with the increasing carbon and has a constant value at the composition over than 1.0%C. The trend of Curie temperature change with carbon is similar with that of CTE. Therefore, the CTE has a linear relationship with Curie temperature. However, the CTE linearly decreases with the ratio of saturation magnetization and Curie temperature(${\sigma}_s/T_c$).

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1433-1435
• /
• 2001

The mechanical and phase transformation of the cold isostatically pressed $\beta$-SiC ceramic were investigated as a function of the sintering temperature. The result of phase analysis revealed 6H, 4H, 3C and phase transformation between 3C and 4H showed over 2000$^{\circ}C$ and the $\beta$ ${\rightarrow}$ $\alpha$ phase transformation was in saturation at 2200$^{\circ}C$. The relative density and the mechanical properties of $\alpha$-SiC ceramic was increased with increased sintering temperature. The flexural strength showed the highest value of 230 MPa at 2200$^{\circ}C$. This reason is because crack was propagated through surface flaw. The fracture toughness showed the highest value of 4.2 $MPa{\cdot}m^{1/2}$ at 2200$^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.12
• /
• pp.54-61
• /
• 1997

An accurate extraction technique is developed to determine full euqivalent circuit parameters of Si MOSFETs using 1 set of measured S-parametes without complicated optimization process. This technique is based on the use of anlytic Z-parameters experessions for resistances and inductances and the Y-parameter ones for ntrinsic parameters. This accuracy is proved over the wide range of gate voltage by observing good agreement between measured and fitted Z-parameter equations and frequency-independent response of the extracted intrinsic parameters. Using this technique, gate voltage-dependencies of model parameters are obained in the saturation region and these results show the similar behavior to the short-channel effects expected from the device theory.

• Proceedings of the KIEE Conference
• /
• 2015.07a
• /
• pp.944-945
• /
• 2015

Many sensitive loads always rely on UPS systems to maintain continuous power during abnormal utility power conditions. As any disturbance occurs at the utility side, an off-line UPS system takes over the load within a quarter cycle to avoid a blackout. However, the starting of the inverter can root the momentous inrush current for the transformer installed before the load, due to its magnetic saturation. The consequences of this current can be a reduction of line voltage and tripping of protective devices of the UPS system. Furthermore, it can also damage the transformer and decrease its lifetime by increasing the mechanical stresses on its windings. To prevent the inrush current, and to avoid its disruptive effects, this paper proposes an off-line UPS system that eliminates the inrush current phenomenon while powering the transformer coupled loads, using a current regulated voltage source inverter (CRVSI) instead of a typical voltage source inverter (VSI). Simulations have been performed to validate the operation of proposed off-line UPS system.

• Proceedings of the Korea Society for Industrial Systems Conference
• /
• 1997.11a
• /
• pp.451-462
• /
• 1997

A 2-dimensional numerical analysis is presented for thermal-electron heat conduction effects upon the electron transport and the drain current-voltage characteristics of submicron GaAs MESFETs, based on the use of a nonstationary hydrodynamic transport model. It is shown that for submicron GaAs MESFETs, electron heat conduction effects are significant on their internal electronic properties and also drain current-voltage characteristics. Due to electron heat conduction effects, the electron energy is greatly one-djmensionalized over the entire device region. Also, the drain current decreases continuously with increasing thermal conductivity in the saturation region of large drain voltages above 1 V. However, the opposite trend is observed in the linear region of small drain voltages below 1 V. Accordingly, for a large thermal conductivity, negative differential resistance drain current characteristics are observed with a pronounced peak of current at the drain voltage of 1 V. On the contrary, for zero thermal conductivity, a Gunn oscillation characteristic is observed at drain voltages above 2 V under a zero gate bias condition.

• Proceedings of the KIEE Conference
• /
• 2003.07a
• /
• pp.314-316
• /
• 2003

To prevent maloperation during magnetic inrush and over-excitation, a current differential relay for power transformers uses harmonic current based restraining or blocking scheme; it also uses dual slope characteristics to prevent maloperation for an external fault with CT saturation. This paper proposes a current differential relaying algorithm for power transformers with an advanced compensation algorithm for the secondary current of CTs. The comparative study was conducted with and without the compensating algorithm. The algorithm can reduce the operating time of the relay in the case of an internal fault and improve security for external faults.

• Electrical & Electronic Materials
• /
• v.9 no.10
• /
• pp.1008-1012
• /
• 1996

I-V, C-V characteristics of inverted staggered type hydrogenerated amorphous silicon thin film transistor(a-Si:H TFT) was studied and experimentally verified. The results show that the log-log plot of drain current increased by voltage increase. The saturated drain current of DC output characteristics increased at a fixed gate voltage. According to the increase of gate voltage, activation energy of electron and the increasing width of Id at high voltage were decreased. Id saturation current saturated at high Vd over 4.5V, Vg-ld hysteresis characteristic curves occurred between -15V and 15V of Vg. Hysteresis current decreased at low voltage of -15V and increased at high voltage of 15V.