• 제목/요약/키워드: Output power oscillation

검색결과 166건 처리시간 0.023초

A D-Band Integrated Signal Source Based on SiGe 0.18μm BiCMOS Technology

  • Jung, Seungyoon;Yun, Jongwon;Rieh, Jae-Sung
    • Journal of electromagnetic engineering and science
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    • 제15권4호
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    • pp.232-238
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    • 2015
  • This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is $900{\times}1,890{\mu}m^2$, including RF and DC pads.

전동차용 전원장치의 출력전압 제어 안정성 향상 (Stability Improvement of Output Voltage Control on the Power Supply for Railways)

  • 서광덕
    • 조명전기설비학회논문지
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    • 제13권4호
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    • pp.134-141
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    • 1999
  • 본 논문은 전동차량용 전원장치의 출력전압 제어 안정성을 향상시키기 위한 연구이다. 입력전압 변동 및 부하 변동 등 과도상태시 출력 정전압 제어를 수행할 경우, L-C 필터부에서 공진이 발생함으로써 출력전압이 흔들리고 시스템이 불안해진다. 본 논문에서, 출력전압제어의 안정성을 확보하기 위해 주필터부에 공진을 억제하는 댐핑회로를 새롭게 제안하고, 이에 적합한 제어방법을 소개한다. 제안한 댐핑회로는 R-L로서 소형이고 간단히 구성된다. 제어기에는 과도상태분의 궤환제어와 대역저지필터를 적용한다. 또한 전력회로는 3레벨 PWM방식을 적용하였다. 이로서 과도상태에서 출력전압의 흔들림없이 변동폭을 10[%]이하로 제어할 수 있었으며, 정상상태의 출력 전압 왜형율도 3[%]이하로 감소시켰다.

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5.8GHz ISM대역 국부 발진기용 능동 공진 발진기 설계 및 제작 (Design and Fabrication of a Active Resonator Oscillator for Local Oscillator in ISM Band(5.8GHz))

  • 신용환;임영석
    • 한국정보통신학회논문지
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    • 제8권4호
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    • pp.886-893
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    • 2004
  • 본 논문에서는 트랜지스터를 이용해서 이득을 갖는 능동 대역 통과 필터, 부성저항 특성을 갖는 능동 공진기를 이용한 능동 공진 발진기를 설계 제작하였다. 제안된 능동 공진 발진기는 ISM 대역의 국부 발진기로 사용 가능하도록 5.5GHz의 발진주파수를 갖도록 설계하였다. 설계된 능동 공진 발진기는 유전율 3.38, 유전체 두께 0.508mm, 금속 두께 0.018mm인 기판 위에 구현하였다. 이득을 갖는 능동 대역 통과 필터를 이용한 능동 공진 발진기는 5.6GHz의 발진주파수와 -2Bm의 출력과 100kHz 옵셋에서의 위상잡음 특성은 -81dBc/Hz이다. 부성저항 특성을 갖는 능동 공진기를 이용한 능동 공진 발진기는 5.8GHZ의 발진주파수와- 4dBm의 출력과 100kHz 옵셋에서의 위상잡음 특성은 -91dBc/Hz이다.

A 2.4 GHz-Band 100 W GaN-HEMT High-Efficiency Power Amplifier for Microwave Heating

  • Nakatani, Keigo;Ishizaki, Toshio
    • Journal of electromagnetic engineering and science
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    • 제15권2호
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    • pp.82-88
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    • 2015
  • The magnetron, a vacuum tube, is currently the usual high-power microwave power source used for microwave heating. However, the oscillating frequency and output power are unstable and noisy due to the low quality of the high-voltage power supply and low Q of the oscillation circuit. A heating system with enhanced reliability and the capability for control of chemical reactions is desired, because microwave absorption efficiency differs greatly depending on the object being heated. Recent studies on microwave high-efficiency power amplifiers have used harmonic processing techniques, such as class-F and inverse class-F. The present study describes a high-efficiency 100 W GaN-HEMT amplifier that uses a harmonic processing technique that shapes the current and voltage waveforms to improve efficiency. The fabricated GaN power amplifier obtained an output power of 50.4 dBm, a drain efficiency of 72.9%, and a power added efficiency (PAE) of 64.0% at 2.45 GHz for continuous wave operation. A prototype microwave heating system was also developed using this GaN power amplifier. Microwaves totaling 400 W are fed from patch antennas mounted on the top and bottom of the microwave chamber. Preliminary heating experiments with this system have just been initiated.

Photonic Bandgap 구조를 이용한 저 위상잡음 듀얼밴드 VCO에 관한 연구 (Low-Phase Noise Dual-band VCO Using PBG Structure)

  • 조용기;서철헌
    • 대한전자공학회논문지TC
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    • 제41권2호
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    • pp.53-58
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    • 2004
  • 본 논문에서는 부성저항을 갖는 발진부의 귀환 경로에 PIN 다이오드를 이용한 스위칭 회로를 추가하여 저 위상잡음 듀얼밴드 전압제어 발진기를 구현하였다. PIN 다이오드에 전원이 인가되지 않았을 때는 5㎓ 대역에서 발진이 일어나고, 인가되었을 때는 1.8㎓ 대역에서 발진이 일어난다. VCO의 위상잡음을 향상시키기 위하여 공진기에 PBG(Photonic Bandgap)구조를 접지 면에 적용하였다. 5.25㎓에서 출력 전력은 -9.17㏈m, 위상잡음은 -102㏈c/㎐이고, 1.8㎓에서 출력 전력은 -5.17㏈m, 위상잡음은 -101㏈c/㎐이다.

Damping of Inter-Area Low Frequency Oscillation Using an Adaptive Wide-Area Damping Controller

  • Yao, Wei;Jiang, L.;Fang, Jiakun;Wen, Jinyu;Wang, Shaorong
    • Journal of Electrical Engineering and Technology
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    • 제9권1호
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    • pp.27-36
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    • 2014
  • This paper presents an adaptive wide-area damping controller (WADC) based on generalized predictive control (GPC) and model identification for damping the inter-area low frequency oscillations in large-scale inter-connected power system. A recursive least-squares algorithm (RLSA) with a varying forgetting factor is applied to identify online the reduced-order linearlized model which contains dominant inter-area low frequency oscillations. Based on this linearlized model, the generalized predictive control scheme considering control output constraints is employed to obtain the optimal control signal in each sampling interval. Case studies are undertaken on a two-area four-machine power system and the New England 10-machine 39-bus power system, respectively. Simulation results show that the proposed adaptive WADC not only can damp the inter-area oscillations effectively under a wide range of operation conditions and different disturbances, but also has better robustness against to the time delay existing in the remote signals. The comparison studies with the conventional lead-lag WADC are also provided.

일반화된 Nyquist 요건에 의한 제논진동의 안전성 분석 (Generalized Nyquist Criterion for the Stability of Xenon Oscillation)

  • Park, You-Cho;Park, Goon-Cherl;Chung, Chang-Hyun;Park, Chong-Kyun
    • Nuclear Engineering and Technology
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    • 제22권4호
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    • pp.371-379
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    • 1990
  • 제논의 공간적인 진동은 원자로의 운전에 지장을 초래할 수 있다. 본 연구에서는 가압경수로에서의 제논에 의한 불안정성을 분석하기 위하여, 보다 일반적이고 다중입력/다중출력 계통에 적합한 일반화된 Nyquist조건을 사용하는 진동수위주의 기술을 적용하였다. 또한 모드전개 방법에 의하여 선형화된 중성자속을 구했다. 이 모형으로 출력 준위, 제어봉 위치, 그리고 평균 노심 연소도둥의 노물리 변수의 변화에 따른 영광 1호기의 제논에 대한 축방향 안정성을 조사하였다. 결과로는, 출력 준위의 증가나 제어봉 삽입의 증가는 안정성을 저해하는 효과를 가져오고, 연소도가 증가할 수록 불안정한 것으로 나타났다.

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AlGaAs/GaAs double-heterojunction 전력용 FET의 설계 (Design of an AlGaAs/GaAs Double-Heterojunction Power FET)

  • 박인식;김상명;신석현;이진구;신재호;김도현
    • 전자공학회논문지A
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    • 제30A권8호
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    • pp.57-62
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    • 1993
  • In this paper, both feasible power gain and power added efficiency at the operating center frequency of 12 GHz are stressed to design a power FET with double-heterjunction structure. The variable parameters or the design are the unit gate width, the gate length, the doping density of AlGaAs, the AlGaAs thickness, the spacer thickness, the Al mole fraction, and the GaAs well thickness. The results of simulation for the FET with 1.mu.m gate length show that the power gain and the power added efficiency are 10.2 dB and 36.3% at 12GHz, respectively. An extrapolation of the relation between current gain and unilateral gain yields a 17 GHz cutoff frequency and 43GHz maximum frequency of oscillation. The calculation of the current versus voltage characteristics show that the output power of the device is about 0.62W.

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Single Mode Laser Oscillation in an Nd-Doped Large Core Double Clad Fiber Cavity with Concatenated Adiabatic Tapers

  • Seo, Hong-Seok;Choi, Yong-Gyu;Kim, Kyung-Hon;Jeong, Hoon;Oh, Kyung-Hwan
    • ETRI Journal
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    • 제24권3호
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    • pp.255-258
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    • 2002
  • We created a new design for an Nd-doped clad-pumped silica fiber laser to enhance the pump absorption and lasing efficiency for a butt-coupled, end-pumped scheme. Two concatenated adiabatic tapers formed within the laser cavity simultaneously removed higher order modes and were spliced to conventional single mode fibers. We theoretically analyzed mode propagation along the composite cavity and experimentally achieved continuous wave oscillation in the $LP_{01}$ mode at $1.06\;{\mu}m$ and a laser output power of over 820 mW with a slope efficiency of 27%.

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C-밴드 GaAs MESFET 발진기의 광 응답 특성 (Optical Response Characteristics of C-Band GaAs MESFET Oscillators)

  • 장용성;이승엽;박한규;박현철
    • 대한전자공학회논문지
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    • 제26권11호
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    • pp.1736-1742
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    • 1989
  • In this thesis, to verify input-output characteristics of GaAs MESFET, light is illuminated to C-band oscillator which already designed and manufactured, thus input-output variation of GaAs MESFET is to be shown. Experimental results of two kinds of optical effects, optical tuning and opticla switching, of GaAs MESFET Oscillators are presented. For optical tuning, the Oscillation frequency decreases with optical illumination and the Oscillator power output generally increases with optical illumination, the increase being around 1 to 3 dBm at 1mW/mm\ulcornerlight intensity. While the DC-lingt illuminated Oscillator response data provide information of the optical senditivity of GaAs-MESFET Oscillators. Pulse-light illuminated transient response data can be invoked to understand the detailed optical-electrical interaction mechanisms response. Thus, it is shown that direct control of micro-devices is realisable, if we use optical effect of GaAs semiconductor compound.

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