• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.14-21
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• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.2
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• pp.87-90
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• 2008

Co-Pt alloy thin films were galvanostatically electrodeposited on Ru (30 nm)/Ta (5 nm)/Si (100) substrates from a amino-citrate based electrolyte. We used Ru(0002)-oriented buffer layers to control the crystallinity and orientation of the Co-Pt alloy thin films. The effect of solution temperature on the microstructure and magnetic properties of the Co-Pt alloy thin film was investigated. The samples were characterized by EDS, FESEM, XRD diffractometer using Cu $K{\alpha}$ radiation. The magnetic properties of these films were analyzed by a VSM and torque magnetometer. The Co-Pt alloy thin films were exhibited very high out-of-plane coercivity and squareness of the multilayer were 6527 Oe and 0.93, respectively, without heat treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.4
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• pp.186-190
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• 2017

When a product is designed, user's requirements should be well analyzed and applied to the design so that the psychological and aesthetic factors of a product can be accurately conveyed to consumers. The essence of product development is to analyze the changes in the purchasing tendency of consumers and the needs of times, find out user experiences to apply to a design, and establish the objective of product development that well considers those. Designing should be recognized as one that designs even the sensitivity and experience created in the relationship with users, beyond the conventional notion of design that it draws the physical form of a product. As the subjects that design should consider have expanded like this, it has become important that today's design provides a new experience as well as simply develops formative elements based on the functions of an object. As a result, it becomes impossible to accomplish such objective only with the traditional design process that existing designers have stuck to so far. In this respect, this study is aimed to draw out a system and methodology for a user-oriented design process so that design can provide expanded experience to users from product form, applied material, and service.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.3
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• pp.110-115
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• 2023

During the Hg₂Br₂ physical vapor transport process, with increasing the partial pressure of component B, P_B from 40 Torr to 200 Torr, a unicellular convective flow structures move from the crystal growth region to the center region in the vapor phase. The boundary layer flow is dominant for P_B = 40 Torr, and the core region flow is dominant for P_B = 200 Torr. The flow in the vapor phase shows a three-dimensional convective flow structure with a single cell (unicellular) for P_B = 40 Torr and 200 Torr, exhibits an asymmetrical flow with respect to the x, y central axis under the horizontally oriented configuration with an aspect ratio (length-to-width) of 3 and linear conducting walls. The critical temperature difference between the source and crystal region is about 30 K. The total molar flux of Hg₂Br₂ increases with the temperature difference until the total molar flux reaches the critical value. At the critical total molar flux, the total molar flux abruptly decreases.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.1-5
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• 2009

In this study, we performed growth of InGaN/GaN multi quantum well (MQW) structures on semi-polar (1-10]) GaN facet on 8-degree off oriented stripe patterned (100) Si substratcs by MOVPE. The structural and optical properties of the InGaN/GaN multi quantum well (MQW) structures grown on (1-101) GaN stripe depend on $NH_3$ flow rate, TMI flow rate and growth temperature are characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). With the decrease of $NH_3$ flow rate, the threading dislocation of (1-101) GaN is considerably reduced. We could control the transition wavelength of InGaN/GaN MQW structures from 391.5 nm to 541.2 nm depend on the growth conditions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.49-55
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• 2001

ZnO films were fabricated on p-type Si(100) wafer ITO glass and quartz glass by the sol-gel process using zinc acetate dihydrate as starting material. A homogeneous and stable solution was prepared by dissolving the zinc acetate dihydrate in a solution of 2-methoxyethanol and monoethanolamine (MEA). ZnO films were deposited by spin-coating at 2800 rpm for 25 s and were dried on a hot plate at $250^{\circ}C$ for 10 min. Crystallization of the films was carried out at $400^{\circ}C$~$800^{\circ}C$ for 1 h in air. X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), UV-vis transmittance spectroscopy, FTIR transmittance spectroscopy and Photoluminescence (PL) spectroscopy measurements have been used to study the structural and optical properties of the films. ZnO films highly oriented along the (002)plane were obtained. In all cases the films were found to be transparent (above 70%) in visible range with a sharp absorption edge at wavelengths of about 380nm, which is very close to the intrinsic band-gap of ZnO(3.2 eV). The low temperature band-edge photoluminescence revealed a complicated multi-line structure in terms of bound exciton complexes and the phonon replicas.

• Tunnel and Underground Space
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• v.10 no.1
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• pp.70-79
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• 2000

We carried out NPT-ensemble (constant-number of particles, pressure, and temperature) Molecular Dynamics (MD) simulations for measuring strength anisotropy under uniaxial compressive stress rotated to the crystallographic axes in $\alpha$-quartz. Uniaxial compressive strengths of a single quartz crystal were measured in directions of the a- and c-axis. Measured uniaxial strength of a single quartz crystal was higher in the direction parallel to the c-axis than that measured in the direction normal to the c-axis. However the reverse was found in calculated uniaxial strengths by MD simulation. The contradictive result of strengths was observed in both cases but was found to be different in origin. Strength anisotropy of defectless $\alpha$-quartz crystal in MD simulation is basically caused by structural difference of quartz. By contrast, anisotropy of measured strength in the uniaxial compression test is related to oriented micro-defects developed during crystal growth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.222-227
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• 2010

ZnO nanorods array have been grown on the seed crystal coated Si(100) substrate by hydrothermal method. The growth, structural and optical properties of ZnO nanorods array were investigated with a variation of precursor concentration from 0.01 M to 0.04 M. The array density of grown ZnO nanorods per same area was increased with increasing the concentration of precursor solution. Vertically aligned ZnO nanorods with hexagonal wurtzite structure have highly preferred c-axis orientation along (002) lattice plane. Especially, ZnO nanorods array developed from 0.04 M precursor solution showed a diameter of about 85 nm and length of 1.2 {\mu}m$ without any crystallographic defects. The photoluminescence spectra of ZnO nanorods from heavier precursor concentration exhibited stronger UV emission around 380 nm corresponding with near-band-edge emission.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.48-54
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• 1990

YBa2Cu3O7-x(=YBCO) single crystals were grown by flux method and the growing process of crystals was investigated. YBCO and 3BaO-7CuO composition powders were mixed by the ratio of 25 : 75(wt%), and the mixtures were melted at 105$0^{\circ}C$ in a electric furnace with no temperature-gradient. Then the melt was cooled at a rate 2-1$0^{\circ}C$/h in the above furnace. YBCO single crystal plate with average size of $1.5\times$2.0$\times$0.1㎣ were obtained in the cavities between crucible and solidified ingot, and the single crystals were oriented to <001> direction. The ingots of flux parts were analyzed by XRD and EDS for the purpose of presuming the growing process of the crystals. It was assumed that the divorced eutectic reaction, by which YBCO crystals were grown first and then BaCuO2 and CuO crystals, occured in the case of cooling rate faster than 2$^{\circ}C$/h. When the cooling rate was 2$^{\circ}C$/h, it was assumed that quasi-equilibrium eutectic reaction occured, so that YBCO, BaCuO2 and CuO crystals were grown at the same time.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.47-50
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• 1999

The orientation mechanism of an amorphous $Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ phase were studied by using the dilatometry. The amorphous $Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ samples brought about a volume shrinkage at the onset of the crystallization of a $Bi_{2}$$Sr_{2}$$CaCu_{2}$$O_{6}$phase around $400^{\circ}C$. The random crystal growth of $Bi_{2}$$Sr_{2}$$CaCu_{2}$$O_{8}$ phase around $800^{\circ}C$. yielded a rapid volume expansion and after then samples shrinmed, accompanied with the crystal orientation. The$Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ (x=0.4) sample exhibited the best-oriented structure because the liquid phase formed seemed to have the lowest viscosity which would contributed to the easy collapse of the card-house structure.