• Journal of the Korean Ceramic Society
• /
• v.23 no.4
• /
• pp.69-77
• /
• 1986

Single crystals of zinc tungstates were grown by the Czochralski method. To obtain the seed crystals various methods were employed including 4 points platinum wirse which dipped the melt and the capillary action from the melt led the 3 differently oriented seeds such as [100], [010] and [001] directions. Optimum growing conditions were observed as neck diameter 2mm rotation speed 50-60 rpm maximum diameter 15mm and pulling rate 0-10 mm/hr. Dendrites covered on the olidified surface in a platinum crucible were turned out to be [001] direction because obviously this crystal has the strong [001] preferential growth habit. The (100) and (010) planes of single crystals showed the slip planes and the (010) plane showed the perfect cleavage surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.367-370
• /
• 1998

In this paper, based on the research of high temperature YBCO superconductor, using the Yb instead of Y, with the YbBCO superconductor powder which was combined by means of conventional solid reaction, textured directional crystal was prepared by MCP method and the character was analyzed. Mixing the starting elements and calcining at 890$^{\circ}C$, 900$^{\circ}C$, 910$^{\circ}C$, single phase YbBCO, Yb$_2$BaCuO$\sub$5/ and BaCuO$\sub$2/ were certified. And from the powder which was calcined at 900$^{\circ}C$ the, sample which became texture-growth by MCP method was well oriented. The result of DTA measurement, the fusing point of YbBCO superconductor and it\`s critical current was measured to be 979$^{\circ}C$, 87K respectively. The critical current density was obtained at the value of 700A/$\textrm{cm}^2$(77K. 0H) calculated by Bean's Model using the measured hysteresis curve of VSM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.671-674
• /
• 2004

BSCCO thin films have been fabricated by epitaxy growth at an ultra-low growth rate. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820 $^{\circ}C$ and the highly condensed ozone gas pressure(PO3) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795 $^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785\;^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.1
• /
• pp.5-12
• /
• 2000

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single- crystalline 6H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 6H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented ($3.5^{\circ}$tilt) substrates from the (0001) basal plane in the <110> direction with the Si-face side of the wafer. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, transmittance spectra, Raman spectroscopy, XRD, Photoluninescence (PL) and transmission electron microscopy (TEM) were utilized. The best quality of 6H-SiC homoepitaxial layers was observed in conditions of growth temperature $1500^{\circ}C$ and C/Si flow ratio 2.0 of $C_3H_8$ 0.2 sccm & $SiH_4$ 0.3 sccm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.49-53
• /
• 1997

In this paper, YbBa$_{2}$Cu$_{3}$O$_{x}$ superconductor was sintered by means of conventional solid reaction and the textured YbBa$_{2}$Cu$_{3}$O$_{x}$ was prepared by the Melted-Condensed Process in which SmBa$_{2}$Cu$_{3}$O$_{x}$ crystal was used as seed crystal to introduce the YbBa$_{2}$Cu$_{3}$O$_{x}$ crystal growth. The texture of YbBa$_{2}$Cu$_{3}$O$_{x}$ was examined by X-ray diffraction, and the fracture of YbBa$_{2}$Cu$_{3}$O$_{x}$ sample was observed by SEM, which proved the sample was well oriented. After oxygen absorption of the textured YbBa$_{2}$Cu$_{3}$O$_{x}$ sample, it's critical temperature was measureed to be 86K.eed to be 86K.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.3
• /
• pp.431-438
• /
• 1996

Transmission electron microscopy has been used to investigate the microstructure of hot-pressed $TiB_{2}$. Thin foil specimens, prepared by conventional ion beam thinning, revealed many features which originated from the crystallographic anisotropy of hexagonal $TiB_{2}$. It was observed that in these specimens Fe-impurities are precipitated to form secondary Fe-rich phases at grain triple edges, in grain boundaries and sometimes in-grain. These Fe-rich precipitates were characterised by their coherence or semi-coherence to a favourably oriented grain at a grain triple edge or grain boundaries or to the matrix $TiB_{2}$ phase.

• Korean Journal of Materials Research
• /
• v.16 no.8
• /
• pp.479-484
• /
• 2006

Highly c-axis oriented poly-crystalline GaN with a dimension of $1{\sim}3\;{\mu}m$ was deposited on $c-Al_2O_3$ substrate by vapor transport epitaxy (VTE) method at the temperature range of $900{\sim}1150^{\circ}C$. XRD intensities from (00'2) plane of grown GaNs were increased with reaction conditions which indicate the improvement of the crystal quality. In the PL spectra measured at 10 K, the spectrum composed with the neutral-donor bound exciton-related emission at 3.47 eV, crystal defect-related emission band at 3.42 eV and with its phonon replicas. The fact that intensity of $I_2$ were increased and FWHM were decreased with growth conditions means that the quality of GaN crystals were improved. With this simple VTE technology, we confirm that the GaNs were simply deposited on sapphire substrate and crystal quality related to optical properties of GaN grown by VTE were relatively good. PL emission without deep level emission in spite of polycrystalline structure can be applicable to the fabrication of large area and low cost optical devices using poly-GaN grown by VTE.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.30 no.6
• /
• pp.264-270
• /
• 2020

Design was developed through user-oriented service design methodology and survey was conducted on material selection criteria for prototype production to select CFRP (Carbon Fiber Reinforced Plastics) CNT (Carbon Nano Tube), which was applied to animal X-ray detector panel to design product and develop prototype. Completed prototype with the application of CFRP CNT panel was tested in drop test, frontal external pressure test, and dustproof/waterproof performance to confirm that it can be utilized as a portable animal X-ray detector used in outdoor environment.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.7 no.3
• /
• pp.449-455
• /
• 1997

The anisotropic etching behavior of single crystal silicon were studied in aqueous KOH solution. N-type (100) oriented single crystal silicon wafers were used for the study, and the $SiO_2$ layer, whose etching rate is known to be much slower than that of silicon in the KOH solution, was used as a mask for the silicon etching. The silicon etching rate and the etching properties are shown to be a function of etchant temperature uniformity, circulation speed, and circulation direction of the etchant as well as the etchant concentration and the temperature. The etching rate is increased as the temperature is increased from $10\mu \textrm{m}/hr$ to $250\mu \textrm{m}/hr$ in the range of $50^{\circ}C~105^{\circ}C$. Hillock density and height is observed to be correlated with the etchant concentration and the etch temperature. The variation of the hillock density was explained by the ratio between the etching rate of (100) orientation and that of (111) orientation.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.25 no.3
• /
• pp.111-115
• /
• 2015

$Er^{3+}$ doped $Y_3Al_5O_{12}$ (Er:YAG) single crystals, in which the concentrations of $Er^{3+}$ ion were 5, 7.3, 8, and 10 at.%, were grown by the Czochralski method under nitrogen atmosphere. The <111> oriented Er:YAG single crystals with diameters of up to 50 mm were grown at a pulling rate of 1.0 mm/h and rotation rate of 10 rpm. The thick part of the core region was generated mainly when there was a diameter change during the crystal growth. The concentrations of $Er^{3+}$ ion in the crystals were the same as it was in the melt. $Er^{3+}$ concentration of core region was slightly higher than the other regions in the compositional analysis. The fluorescence lifetime was saturated according to the increase of $Er^{3+}$ doping concentrations.