• Bulletin of the Korean Chemical Society
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• 제24권5호
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• pp.645-646
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• 2003

• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.431-435
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• 2014

Zinc peroxide nanoparticles ($ZnO_2$ NPs) were prepared by reacting zinc(II) isobutylcarbamate, as an organometallic precursor, with hydrogen peroxide ($H_2O_2$) at $60^{\circ}C$. Polyethylene glycol and polyvinylpyrrolidone were used as stabilizers, which suppressed aggregation of the $ZnO_2$ NPs. Conditions such as concentrations of $H_2O_2$ and the stabilizer were systemically controlled to determine their effect on the formation of nano-sized $ZnO_2$ NPs. The formation of stable $ZnO_2$ NPs was confirmed by UV-vis, Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and X-ray diffraction. The TEM images revealed that polyvinylpyrrolidone-stabilized $ZnO_2$ NPs (diameter, 10-30 nm) were well dispersed in the organic solvent. Quite pure ZnO NPs were obtained from the peroxide powder by simple heat treatment of $ZnO_2$. The transition temperature of $170^{\circ}C$ was determined by differential scanning calorimetry.

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.114-118
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• 2009

A new Zn/O single source precursor, TMEDA-Zn$(eacac)_2$, has been synthesized by using N, N, N’, N’-tetramethylethylendiamine (TMEDA), sodium ethyl-acetoacetate, and $ZnCl_2$. From this organometallic precursor, ZnO thin films have been successfully grown on Si (100) substrates through the metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions in the temperature range of 390~430 ${^{\circ}C}$. The synthesized ZnO films have been found to possess average grain sizes of about 70 nm with an orientation along the c-axis. The precursor and ZnO films are characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, EI-FAB-spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

• Bulletin of the Korean Chemical Society
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• 제19권12호
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• pp.1314-1319
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• 1998

Electronic structures and properties of the organometallic precursors [Me2AlNHR]2 (R =Me, iPr, and tBu) have been calculated by the semiempirical (ASED-MO, MNDO, AM1 and PM3) methods. Optimized structures obtained from the MNDO, AM1, and PM3 calculations indicate that the N-C bond lengths are considerably affected by the change of the R groups bonded to nitrogen, but the bond lengths of the Al-N and Al-C bonds are little affected. This result is useful in explaining the experimental results for the elimination of the R groups bonded to nitrogen, and could serve as a guide in designing an optimum precursor for the AlN thin film formation.

• 대한전자공학회논문지SD
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• 제44권11호
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• pp.20-25
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• 2007

SiOC 박막과 같은 유무기 하이브리드 실리카 물질에서의 열처리효과에 의한 결합구조의 변화와 유전상수에 관하여 연구하였다. 유무기 하이브리드 실리카 물질은 BTMSM과 산소의 혼합가스를 이용한 CVD방법에 의하여 증착되었다. 유무기 하이브리드 실리카 물질은 증착조건에 따라 3가지 유형으로 분류되었으며, 유전상수는 MIS 구조에 의하여 조사되었다. XPS 분석에 의하여 C 1s 스펙트라는 O2/BTMSM=1.5의 유량비를 갖는 박막에서 282.9 eV의 organometallic carbon 반응을 보여주는 피크를 나타내었다. organometallic carbon반응의 결과는 안정성 있는 크로스 링크 결합구조를 만들어내며, 하이브리드 특성을 갖는 이 박막에서 열처리 후 유전상수는 가장 낮았다.

• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 2003년도 봄 학술발표회 논문집
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• pp.98-100
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• 2003

The efficiency of the adsorption of adsorbents depends on both pore size and shape. In other to adsorb hydrated ion in application of electric double layer capacitor (EDLC), mesopore is necessary[1,2]. Tamai et al.[3] reported that an increased portion of mesopore was introduced through addition of metal or organometallic compound in the precursor and following activation of the carbon fibers with steam. (omitted)

• 한국표면공학회지
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• 제33권4호
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• pp.261-265
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• 2000

Geometrically and chemically well defined Pt/alumina model catalysts have been prepared. To this end, we fabricated electrochemically alumina supports in which pores of constant size, length and shape were regularly distributed over a wide area of the surface. Platinum particles were dispersed on the pore surfaces via organometallic chemical vapor deposition technique using (trimethyl) methylcyclopentadienylplatinum (IV) as a precursor. The chemical composition of the alumina plane surfaces was examined by Auger electron spectroscopy and the adsorption characteristics of the platinum particles were studied by thermal desorption spectroscopy. A variety of industrial catalytic problems are now open for further investigation utilizing the Pt/alumina model catalysts.

• Bulletin of the Korean Chemical Society
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• 제35권11호
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• pp.3299-3302
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• 2014

The In2S3 thin films of tetragonal structure and In2O3 films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ($[(Et)_3NH]^+[In(SCOCH_3)_4]^-$; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide ($SiO_2$) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of $10.1cm^2V^{-1}s^{-1}$ at a curing temperature of $500^{\circ}C$, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

• Bulletin of the Korean Chemical Society
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• 제15권1호
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• pp.79-83
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• 1994

The organometallic chemical vapor deposition of single precursors, $[Me_2Al({\mu}-NHR)]_2\;(R=^iPr,\;^tBu)$, for alumininum nitride thin films has been investigated to evaluate their poroperties as potential precursors. In chemical vapor deposition processes the gas phase products scattered from a Ni(100) substrate were analyzed by mass spectrometry and the deposited films were characterized by X-ray photoelectron spectroscopy (XPS). The optimum temperatures for the formation of AlN films have been found to be between 700 K and 800 K. Carbon contamination of the films seems to be attributed mainly to the methyl groups bonded to the aluminum atoms. It is apparent that $^tBu$ group is better than $^iPr$ group as a substituent on the nitrogen atom of the single precursors for the AlN thin film formation.

• 대한화학회지
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• 제38권2호
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• pp.92-100
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• 1994

초미립 코발트 치환 산화철 분말을 새로운 유기금속 전구체인 $Co_xFe_{1-x}(N_2H_3COO)_2(N_2H_4)_2$ (x = 0, 0.01, 0.02, 0.03, 0.05, 0.10, 1.00)을 열분해화 산화과정으로 제조하였다.유기금속 전구체는 몰비 x : 1-x인 Co(II)와 Fe(II)를 hydrazinocarboxylic acid와 반응시켜서 합성하였고, 합성을 정량분석, 및 적외선분광기를 사용하며, 합성을 정량분석, 원소분석 및 적외선분광기를 사용하여 확인하였다. 유기금속 전구체의 열분해 과정은 TG-DTG 와 DSC로 살펴보았다. 코발트치환 산화철 분말은 유기금속 전구체를 대기 중에서 $350^{\circ}C$ 와 $450^{\circ}C$에서 6시간 열처리하여 제조하였다. 산화철의 결정상은 각각 ${\gamma}-Fe_2O_3$ 및 ${\gamma}-Fe_2O_3$ 와 ${\alpha}-Fe_2O_3$의 혼합상이었다. 입자의 형태는 구형에 가까운 모양이었고 크기는 $0.05{\mu}m$ 이하의 초미립이었다. 코발트 치환 산화철의 보자력과 각형비는 코발트 함량 또는 열처리 온도가 높아질 수록 증가하였다.