• Information Display
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• v.15 no.2
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• pp.16-24
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• 2014

• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.53-58
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• 2022

Here, the surface characteristics of the dielectric were controlled by introducing the self-assembled monolayers (SAMs) as the intermediate layers on the surface of the AlOx dielectric, and the electrical performances of the organic charge modulated transistor (OCMFET) were significantly improved. The organic intermediate layer was applied to control the surface energy of the AlOx gate dielectric acting as a capacitor plate between the control gate (CG) and the floating gate (FG). By applying the intermediate layers on the gate dielectric surface, and the field-effect mobility (μ_OCMFET) of the OCMFET devices could be efficiently controlled. We used the four kinds of SAM materials, octadecylphosphonic acid (ODPA), butylphosphonic acid (BPA), (3-bromopropyl)phosphonic acid (BPPA), and (3-aminopropyl)phosphonic acid (APPA), and each μ_OCMFET was measured at 0.73, 0.41, 0.34, and 0.15 cm2V-1s-1, respectively. The results could be suggested that the characteristics of each organic SAM intermediate layer, such as the length of the alkyl chain and the type of functionalized end-group, can control the electrical performances of OCMFET devices and be supported to find the optimized fabrication conditions, as an efficient sensing platform device.

• Electrical & Electronic Materials
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• v.17 no.8
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• pp.3-12
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• 2004

유기 박막 트랜지스터 (Organic Thin film Transistors ； 이하 OTFT)는 1986년부터(1) 반도체 장치의 새로운 부류로 급속하게 발전해 오고 있다. 반도체 산업에 있어 이러한 유기물질의 큰 발전은 1947년에 있었던 최초의 inorganic FET (Field Effect Transistor) 탄생에 버금갈 만한 성과라고 여겨진다.(중략)

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1539-1542
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• 2007

We have synthesized novel organic passivation materials to protect organic thin film transistors (OTFTs) from $H_2O$ and $O_2$ using polyvinyl alcohol (PVA)/layered silicate (SWN) nano composite system. Up to 3 wt% of layered silicate to PVA, very homogeneous nanocomposite solution was prepared.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.215-216
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• 2000

We fabricated the thin-film transistors using organic semiconductor, pentacene, on $SiN_x$, gate insulator. X-ray diffraction experiments were performed for the sample after heat-treatments at higher temperatures. We confirmed that we obtained "thin-film phase" from the condition used here. From the electrical measurements, we also confirmed that no charges are accumulated at the interface between organic and insulating layer, and FET characteristics of the organic FET using pentacene was discussed.

• Journal of Information Display
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• v.4 no.2
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.155-158
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• 2007

Printed organic thin-film transistor(OTFT) to use as a switching device for an organic light emitting diode(OLED) were fabricated in the microcontact printing and direct printing processes at room temperature. The gate electrodes($5{\mu}m$, $10{\mu}m$, and $20{\mu}m$) of OTFT was fabricated using microcontact printing process, and source/drain electrodes ($W/L=500{\mu}m/5{\mu}m$, $500{\mu}m/10{\mu}m$, and $500{\mu}m/20{\mu}m$) was fabricated using direct printing process with hard poly(dimethylsiloxane)(h-PDMS) stamp. Printed OTFT with dielectric layer was formed using special coating system and organic semiconductor layer was ink-jet printing process. Microcontact printing and direct printing processes using h-PDMS stamp made it possible to fabricate printed OTFT with channel lengths down to $5{\mu}m$, and reduced the process by 20 steps compared with photolithography. As results of measuring he transfer characteristics and output characteristics of OTFT fabricated with the printing process, the field effect characteristic was verified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.450-450
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• 2007

Indium tin oxide (ITO), which is used as an electrode in organic thin film transistors (OTFT), was modified with a self-assembled monolayer (SAM) by wet chemical surface modification. The surface of the ITO was treated by dipping method in a solution of 2-chloroethane phosphonic acid (2-CEPA) at room temperature. The work function in the ITO which was modified with the SAM in the 2-CEPA had 5.43eV. A surface energy and a transmittance were unchanged in an error range. On this study, therefore, possibility of ohmic contact is showed in the interface between the ITO and the organic semiconductors. These results suggest that the treatment of the ITO with the SAM can greatly enhance the performance of the OTFT.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.210.2-210.2
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• 2015

유기 박막 트랜지스터(Organic Thin Film Transistor, OTFT)기반의 바이오센서는 저비용 제작 및 플렉서블 소자 제작이 가능하여 많은 주목을 받아오고 있다. 본 연구에서는, hexamethyldisilazane (HMDS) 표면 처리된 $Si/SiO_2$ 기판 위에 진공 증착 공정을 이용하여 pentacene 기반의 OTFT를 제작한 후, 수용성 매체에 대한 안정성을 향상시키기 위하여 저분자 물질인 tetratetracontane (TTC)를 진공 증착 공정을 이용하여 증착하였으며, cyclized perfluoropolymer (CYTOP)을 용액 공정으로 코팅하여 bilayer의 passivation 층을 형성하였다. 실제 제작된 OTFT의 수용성 매체에 대한 안정성을 테스트하기 위하여 소자에 수용성 phosphate buffered saline (PBS)용액을 투하하여 10분에 걸쳐 1분 간격으로 transistor의 transfer 특성을 측정하였다. 또한 측정된 $I_d-V_g$ 곡선 데이터를 이용하여 시간에 따른 드레인 전류, 이동도, 문턱 전압, 점멸비 등의 수치를 산출하였다. 그리고, 그 $I_d-V_g$ 곡선 데이터와 산출된 데이터들을 증류수가 투하된 OTFT 소자의 $I_d-V_g$ 곡선 데이터와 산출된 데이터들과 비교하였다. 결론적으로, TTC/Cytop bilayer passivation 층이 형성된 OTFT 소자는 인체 내 혈액의 pH와 유사한 PBS 용액 하에서도 안정적인 구동 성능을 보여 바이오센서로 응용될 수 있는 가능성이 있다는 결론을 얻었다.