• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.379-384
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• 1999

Langmuir-Blodgett(LB) films which have high ordered orientation and ordering structure are fabricated by LB method which deposit the ultra-thin films of organic materials at a molecular level. The electrical characteristics of stearic acid LB ultra-thin films for the horizontal direction were investigated to develop the gas sensor using LB ultra-thin films. The optimal deposition condition to deposit the LB ultra-thin films was obtained from $\pi-A$ isotherms and the deposition status of stearic acid LB ultra-thin films was verified by the measurement of deposition ratio, UV-absorbance, and electrical properties for LB ultra-thin films. The conductivity of stearic acid LB ultra-thin films for horizontal direction was about $10_{-8}[S/cm]$. The activation energy for LB ultra-thin films with respect to variation of temperature was about 1.0[eV], which was correspond to semiconductor material. The response characteristics for organic gas were confirmed by measuring the response time, recovery time, and reproducibility of the LB ultra-thin to each organic gas. Also, the penetration and adsorption behavior of gas molecule were confirmed through the organic gas response characteristics of LB ultra-thin films with respect to temperature.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.95-98
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• 2015

Organic polymer dielectric thin films of styrene and vinyl acetate were prepared by the plasma polymerization deposition technique and applied for the fabrication of an organic thin film transistor device. The structural properties of the plasma polymerized thin films were characterized by Fourier-transform infrared spectroscopy, X-ray diffraction, atomic force microscopy, and contact angle measurement. Investigation of the electrical properties of the plasma polymerized thin films was carried out by capacitance-voltage and current-voltage measurements. The organic thin film transistor device with gate dielectric of the plasma polymerized thin film revealed a low operation voltage of −10V and a low threshold voltage of −3V. It was confirmed that plasma polymerized thin films of styrene and vinyl acetate could be applied to functional organic thin film transistor devices as the gate dielectric.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.4
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• pp.395-399
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• 2008

The purpose of this paper is to investigate the fabrication of P(VDF-TrFE) organic thin films through the vapor deposition method and the piezoelectric properties of the organic thin films thus produced. Vapor deposition was performed under the following conditions: the working temperature, and the pressure of reaction chamber were $300^{\circ}C$, and $2.0{\times}10^{-5}$ Torr, respectively. The molecular structure and crystallinity of the evaporated organic thin films were evaluated by using a FT-IR (Fourier-Transform Infrared spectroscopy) and XRD (X-ray diffractometry), The results showed that crystallinity increased with an increase in the substrate temperature. When the P(VDF-TrFE) organic thin films were fabricated by increasing the substrate temperature, its piezoelectric coefficient($d_{33}$) increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.181-181
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• 2013

Recently, nanostructure and the molecular orientation of organic thin films have been largely paid attention due to its importance in organic electronics such as organic thin film transistors (OTFTs), organic light emitting diodes (OLEDs), and organic photovoltaics (OPVs). Among various methods, the diffraction and scattering techniques based on synchrotron x-rays have shown powerful results in organic thin film systems. In this work, we introduce the in-situ annealing system installed at PLS-II (Pohang Light Source II) for organic thin films by simultaneously conducting various x-ray scattering measurements of x-ray reflectivity, conventional x-ray scattering, grazing incidence wide angle x-ray scattering (GI-WAXS) and so on. Using the in-situ measurement, we could obtain real time variation of nanostructure as well as molecular orientation during thermal annealing in metal-phthalocyanine thin films. The variation of surface and interface also could be simultaneously investigated by the x-ray reflectivity measurement.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1998.11a
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• pp.112-115
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• 1998

We investigate the qualities of organic materials by which can manufacture organic thin films for solar cells and make thin films for insulation layers of an insulated cable. We give pressure stimulation into organic thin films and detect the induced displacement current. In processing of a device manufacture, We can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/organic thin films(polyimide)/Au and I-V characteristic of the device is measured from 0[V] to +5[V]. The maximum value of measured current is increased as the number of accumulated layers are decreased. The resistance for the number of accumulated layers, the energy density for an input voltage show desired results, and the insulation of a thin film is better as the interval between electrodes is larger.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.194-200
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• 1999

In this paper studied was the piezoelectric properties of the $\beta$-PVDF organic thin films prepared by physical vapour deposition method. The molecular orientation of organic thin films was controlled by the application of an electric field and variation of substrate temperature during the evaporation process. Optimum conditions of manufacturing $\beta$-PVDF organic thin film by physical vapor deposition method is to keep at the substrate temperature of $80^{\circ}C$, at the applied electric field of 142.8 kV/cm. The voltage output coefficient increased from 1.39 to 7.04V increasing the force moment.

• Proceedings of the KIEE Conference
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• 2001.07e
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• pp.35-39
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• 2001

The purpose of this paper is improvement the piezoelectric of Polyvinylidene fluoride(PVDF) organic thin films is fabricated by vapor deposition method. The piezoelectric of PVDF organic thin films attributed to dipole orientation in crystalline region. Also, the piezoelectric characteristic reduced that dipole moments orientation in crystalline region interfered with impurity carriers. Therefore, PVDF organic thin films fabricated with high substrate temperature condition for crystallinity improvement. The crystallinity of PVDF organic thin films fabricated by this condition increase from 47 to 67.8%. The ion density of PVDF organic thin films fabricated by substrate temperature variation from $30^{\circ}C$ to $105^{\circ}C$ decreased from $1.62{\times}10^{16}cm^3$ to $6.75{\times}10^{11}cm^3$ when temperature and frequency were $100^{\circ}C$, 10Hz, respectively. The $d_{33}$ and piezo-voltage coefficient of PVDF organic thin films increased from 20pPC/N to 33pC/N and $162.9{\times}10^{-3}V{\cdot}m/N$ to $283.2{\times}10^{-3}V{\cdot}m/N$, respectively. For the sake of the applications of piezoelectric sensor, we analyzed the output voltage characteristic as a function of the distance between an oscillator of 28kHz and PVDF organic thin film transducer. From this, we found that the output voltage is inversely proportional to the distance. At this time, the period was about $35.798{\mu}s$ and equal the oscillator frequency.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1189-1192
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• 1993

Organic thin films were fabricated an using interelectrode capacitively coupled type plasma polymerizaion apparatus, and their optical properties were investigated. A deposition rate of styrene thin films is linearly increased, but one or vinyl-pyridine thin films is nonlinearly increased with increasing of polymerization time, pressure and monomer flow rate. The transmittance of single layer thin films is constant, but that of multi-layer appeared irregular peak with increasing of the number of layers. And then the refractive index of organic thin films is various from 1.55 to 1.65 with wavelength, the extinction coefficient indicated $10^{-3}$.

• Journal of the Korean Society of Safety
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• v.28 no.2
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• pp.37-41
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• 2013

In this work, we report the effect on the volatole organic compounds(VOCs) sensing properties of Copper phthalocyanine(CoPc) and Dilithium phthalocyanine(DiLiPc) thin films onto alumina substrates. Use evaporation method and the spin-coated method for sensing device. The materials of metallophthalocyanine macrocyclic compound solutions blended with N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine and/or Poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] solutions. The influence of the blended in with metallophthalocyanine macrocyclic compounds on the resistance have been measured and analyzed in five different volatole organic compounds. The following results were obtained: The AFM 3D image of thin films deposited on metallophthalocyanine macrocyclic compound shows that the surfaces roughness were about CuPc 4.1~14.3 nm(7.5~8.1%), DiLiPc 10.3~22.2 nm(7.9~11.5%). The resistances decreases upon increasing the concentration of vapor organic compounds to CuPc and DiLiPc thin films. That thin films blended Copper phthalocyanine(CoPc) and Dilithium phthalocyanine(DiLiPc) with N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine and/or Poly[2-methoxy--5-(2'-ethylhexyloxy)-1,4-phenylenevinylene]. The resistances of blended thin films with N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine and/or Poly[2-methoxy--5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] decreases upon increasing the concentration of volatole organic compounds(VOCs) on DiLiPc than CuPc compound thin films.

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.969-976
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• 1996

RuO2 thin films were deposited on SiO2(1000 $\AA$)/Si by hot-wall Metal Organic Chemical Vapor Depositon. The crystallinity of RuO2 thin films increased with increasing deposition temperature and the preferred orienta-tion of RuO2 films converted (200) plane to (101) plane with increasing film thicknesses. Such a change in preferred orientation was influenced on the crystallographic structure and the residual stress of RuO2 thin films. The resistivity of the 2700$\AA$-thick RuO2 thin films deposted at 30$0^{\circ}C$ was 52.7$\mu$$\Omega$-cm and they could be applicable to bottom electrodes of high dielectric materials. However the resistivity of RuO2 thin films increased with decreasing film thicknesses. The grain size and the resistivity of RuO2 thin films were densified with increasing the annealing temperature and showed the decrease of resistivity.