• 인간식물환경학회지
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• 제21권6호
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• pp.445-460
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• 2018

Exposure to indoor air pollution is an emerging world-wide problem, with growing evidence that it is a major cause of morbidity worldwide. Whilst most indoor air pollutants are of outdoor origin, these combine with a range of indoor sourced pollutants that may lead to high pollutant levels indoors. The pollutants of greatest concern are volatile organic compounds (VOCs) and particulate matter (PM), both of which are associated with a range of serious health problems. Whilst current buildings usually use ventilation with outdoor air to remove these pollutants, botanical systems are gaining recognition as an effective alternative. Whilst many years research has shown that traditional potted plants and their substrates are capable of removing VOCs effectively, they are inefficient at removing PM, and are limited in their pollutant removal rates by the need for pollutants to diffuse to the active pollutant removal components of these systems. Active botanical biofiltration, using green wall systems combined with mechanical fans to increase pollutant exposure to the plants and substrate, show greatly increased rates of pollutant removal for both VOCs, PM and also carbon dioxide ($CO_2$). A developing body of research indicates that these systems can outperform existing technologies for indoor air pollutant removal, although further research is required before their use will become widespread. Whilst it is known that plant species selection and substrate characteristics can affect the performance of active botanical systems, optimal characteristics are yet to be identified. Once this research has been completed, it is proposed that active botanical biofiltration will provide a cheap and low energy use alternative to mechanical ventilations systems for the maintenance of indoor environmental quality.

• 대한금속재료학회지
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• 제49권10호
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• pp.811-817
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• 2011

In this study, we have investigated the role of a metal oxide hole injection layer (HIL) between an Indium Tin Oxide (ITO) electrode and an organic hole transporting layer (HTL) in organic light emitting diodes (OLEDs). Nickel Oxide films were deposited at different deposition times of 0 to 60 seconds, thus leading to a thickness from 0 to 15 nm on ITO/glass substrates. To study the influence of NiO film thickness on the properties of OLEDs, the relationships between NiO/ITO morphology and surface properties have been studied by UV-visible spectroscopy measurements and AFM microscopy. The dependences of the I-V-L properties on the thickness of the NiO layers were examined. Comparing these with devices without an NiO buffer layer, turn-on voltage and luminance have been obviously improved by using the NiO buffer layer with a thickness smaller than 10 nm in OLEDs. Moreover, the efficiency of the device ITO/NiO (< 5 nm)/NPB/$Alq_3$/ LiF/Al has increased two times at the same operation voltage (8V). Insertion of a thin NiO layer between the ITO and HTL enhances the hole injection, which can increase the device efficiency and decrease the turn-on voltage, while also decreasing the interface roughness.

• Advances in environmental research
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• 제10권1호
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• pp.87-103
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• 2021

Anaerobic digestion (AD) refers to the biological process which can convert organic substrates to biogas in the absence of oxygen. The aim of this study was to determine the capability of feedstock to produce biogas and to quantify the biogas yield from different feedstocks. A co-digestion approach was carried out in a continuous stirred tank reactor operated under mesophilic conditions and at a constant organic loading rate of 0.0756 g COD/ L.day, with a hydraulic retention time of 25 days. For comparison, mono-digestion was also included in the experimental work. 2 L working volumes were used throughout the experimental work. The seed culture was obtained from composting as substrate digestion. When the feedstock was added to seeding, the biogas started to emit after three days of retention time. The highest volume of biogas was observed when the seeding volume used for 1000mL. However, the lowest volume of biogas yield was obtained from both co-digestion reactors, with a value of 340 mL. For methane yield, the highest methane production rate was 0.16 L CH4/mg. The COD with yield was at 8.6% and the lowest was at 0.5%. The highest quantity of methane was obtained from a reactor of Euphorbiaceae peel with added seeding, while the lowest methane yield came from a reactor of Euphorbiaceae stems with added seeding. In this study, sodium bicarbonate (NaHCO3) was used as a buffering solution to correct the pH in the reactor if the reactor condition was found to be in a souring or acidic condition.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.260-264
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• 2012

We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of IZO thin films intended for use as anode contacts in the organic light emitting diodes (OLED) devices. These IZO thin films were deposited on the PES film by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar + O2, and Ar + H2) at room temperature. In order to investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon has been changed from 0.1 sccm to 0.5 sccm, respectively. All the IZO thin film has an (222) preferential orientation regardless of ambient gases. The electrical resistivity of the IZO film increased with increasing O2 flow rate, whereas the electrical resistivity decreased sharply under an Ar + H2 atmosphere and was nearly similar regardless of the H2 flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made with the configuration of IZO/α-NPD/DPVB/Alq3/LiF/Al in order to elucidate the performance of the IZO substrate. The current density and the luminance of OLED devices with IZO thin films deposited in 0.5 sccm H2 ambient gas are the highest amongst all other films.

• 마이크로전자및패키징학회지
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• 제30권2호
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• pp.13-20
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• 2023

마이크로 전자기계 시스템 공정에서 표면 처리는 공정 방법의 일환이자 디바이스에 자체적인 기능을 부여하는 역할을 한다. 특히 자기 조립 단분자층은 마이크로 전자기계 시스템 공정에서 표면 개질 및 기능화를 수행하는 표면처리 방법으로 침지 시간과 용액 농도에 따라 강도를 정밀하게 조절할 수 있는 유기 단분자막이다. 고분자 기판이나 금속/세라믹 부품에 자발적으로 흡착되어 형성되는 자기 조립 단분자층은 표면 특성의 개질 뿐만 아니라 나노스케일 단위의 높은 정밀도로 하여금 양산용 리소그래피 기술 및 초민감 유기/생체분자 센서에도 응용되고 있다. 본 논문에서는 마찰 특성의 조절부터 생체 분자의 탐침 기능까지 자기 조립 단분자층 기술이 발전되어 응용되고 있는 다양한 분야들에 대해 소개한다.

• 접착 및 계면
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• 제24권3호
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• pp.86-94
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• 2023

OLED 소자를 용액공정으로 제작함에 있어 음극 전극의 용액공정화가 기술적인 난제이므로 별도의 기판에 음극 전극을 형성하고 PEI 층을 접합층으로 사용하여 이를 다른 기판의 소자와 물리적, 전기적으로 연결하는 연구를 진행하였다. PEI 용액의 농도, PEI 층의 두께 및 첨가제 혼합 등을 변수로 하였으며 접착력 측정기와 EOD 소자 제작을 통하여 특성을 확인한 결과는 다음과 같다. PEI 용액의 농도가 높을수록 접착강도가 증가하였으나 막 두께의 증가로 전류 밀도가 감소하였다. 0.1 wt% PEI 용액에 첨가제로서 조비톨과 PEG를 혼합한 결과 PEG를 0.5 wt%의 농도로 혼합한 조건에서 900 mA/cm² 의 최대 전류 밀도를 얻었으며 양호한 접착 상태와 소자의 점등도 확인되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국토양비료학회지
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• 제43권6호
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• pp.858-863
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• 2010

블루베리는 유기물 함량이 높고 물리성이 양호한 산성토양에서 안정적인 생육을 기대할 수 있다. 그러나 국내 작물 재배토양은 배수가 불량하고 유기물 함량이 낮은 알칼리 토양이 대부분이다. 따라서 블루베리 재배 농가들은 적합한 토양으로 개량하기 위하여 피트모스에 크게 의존하고 있으나, 작물생육과 경제성이 고려된 혼합비율의 정보가 미흡한 실정이다. 본 연구는 경제성과 안정생육을 고려한 적정 피트모스 혼합비율 구명과 이와 비슷한 물리 화학적 특성을 가진 톱밥과 코코피트의 적용 가능성을 검토하고자 본 연구를 수행하였다. 본 연구에 사용된 유기자재는 피트모스, 코코피트 그리고 신선한 톱밥이며, 각각의 유기자재는 토양에 부피비율로 0%, 12.5%, 50% 그리고 100%로 혼합하여 처리하였다. 시험 후 유기자재별 혼합비율에 따른 토양 pH는 피트모스와 톱밥이 각각 100%인 처리구가 3.67과 3.73으로 가장 낮았으며, 피트모스 50% 혼합구가 5.30으로 뒤를 이었다. 유기물 함량은 모든 자재가 혼합비율과 같은 경향을 나타냈으며, 이와 같은 경향은 코코피트 혼합구의 치환성 칼리 함량에서도 동일하였다. 그러나 유효인산과 치환성 칼슘과 마그네슘 함량은 혼합비율이 증가할수록 감소하는 경향이었다. 처리별 엽중 질소함량은 피트모스와 코코피트 처리에서 혼합비율이 증가할수록 감소하는 경향을 나타냈으며, 톱밥 처리는 혼합비율에 따른 경향이 나타나지 않았다. 인산 함량은 톱밥과 코코피트 처리에서 혼합비율이 증가할수록 감소하는 경향을 나타냈으나, 칼리 함량은 증가하는 경향이었고, 칼슘과 마그네슘 함량은 유기자재간 혼합비율간 차이가 없었다. 유기자재별 혼합비율에 따른 블루베리의 초장, 경경, 건물중 등의 생육은 피트모스 50%> 피트모스 12.5%> 코코피트 12.5% 순 이었으며, 피트모스 100% 처리구의 생육은 매우 저조하였다. 따라서 블루베리의 토양환경 개선과 우량한 생육을 위한 토양 개선자재로서는 피트모스가 가장 효과적이었음을 확인하였으며, 경제성을 고려한 혼합 비율은 25-50% 범위가 타당하다 보겠다.

• Journal of the Korean Wood Science and Technology
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• 제43권3호
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• pp.400-409
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• 2015

본 연구는 폐목재칩, 라디에타파인칩 그리고 폐목재칩을 매트타입으로 제조한 것을 이용한 양액재배용 고형배지에 대한 특성과 엽채류를 이용한 작물생육발달특성을 검토하였다. 가비중은 폐목재칩이 $0.20g/cm^2$, 라디에타 파인칩이 $0.16g/cm^2$였고, 수분보유율은 폐목재칩과 라디에타파인칩으로 제조한 목재고형배지가 대조구인 암면과 코코피트 배지보다 낮았고, 매트타입의 배지가 가장 낮았다. 폐목재 고형배지는 pH 6.59, 전기전도도 6.76 dS/m, 총질소함량 0.50%, 탄질율 113%, 인산(P)함량 10.1 ppm, 카리(K) 77 ppm, 칼슘(Ca)성분 531 ppm, 마그네슘(Mg) 49 ppm, 나트륨(Na) 96 ppm으로 구성되었다. 라디에타파인 고형배지는 pH 5.29, 전기전도도 4.49 dS/m, 총질소함량 0.32%, 탄질율 180%, 인산(P)함량 6.4 ppm, 카리(K) 83 ppm, 칼슘(Ca)성분 97 ppm, 마그네슘(Mg) 29 ppm, 나트륨(Na) 59 ppm으로 구성되었다. 매트형태의 배지를 제외한 목재고형배지의 작물생육발달특성은 암면배지와 코코피트 배지와 유사한 경향을 보여주었다. 이상의 결과에서 폐목재자원을 이용한 유기고형배지는 기존의 배지인 암면배지와 코코피트 배지를 대체할 수 있는 고형배지로서의 가능성을 시사하였다.

• Journal of information and communication convergence engineering
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• 제1권3호
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• pp.133-138
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• 2003

The preparation of $Al_{2}O_{3}-SiO_{2}$ thin films from less than one micron to several tens of microns in thickness had been prepared from metal alkoxide sols. Two methods, dip-withdrawal and electrophoretic deposition, were employed for thin films and sheets formation. The requirements to be satisfied by the solution for preparing uniform and strong films and by the factors affecting thickness and other properties of the films were examined. For the preparation of thin, continuous $Al_{2}O_{3}-SiO_{2}$ films, therefore, metal-organic-derived precursor solutions contained Si and Al in a chemically polymerized form has been developed and produced in a clear liquid state. In the process of applying to substrates, this liquid left a transparent, continuous film that could be converted to crystalline $Al_{2}O_{3}-SiO_{2}$ upon heating to $1000^{\circ}C$. And, a significant change of the film density took place in the crystallization process, thus leading to the strict requirements as to the film thickness, which could survive crystallization.