• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.168-168
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• 2010

Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• 공업화학
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• 제20권5호
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• pp.542-546
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• 2009

본 연구는 사과나 귤의 껍질류 과일 폐기물과 하수슬러지가 혼합된 유기성 폐기물을 이용한 회분식 혐기 분해공정에서 메탄 생산이 고찰되었다. 사과껍질 또는 귤껍질이 하수슬러지와 혼합된 기질로 사용되어졌을 때, 3 : 7의 혼합비로 운전한 것이 가장 높은 메탄 생산을 나타내었다. 그러나, 이 비율 이상에서는 사과와 귤 껍질이 함유된 유기산으로 인하여 혼합물의 pH가 8.0에서 4.5~4.7으로 감소하였으며, 결과적으로 메탄 생산이 낮아졌다. 이러한 실험 결과들은 사과, 귤 껍질과 하수슬러지의 혼합된 회분식 혐기 소화 공정에서 바이오에너지로서 메탄가스의 생산 시스템에 효과적으로 활용될 수 있을 것이다.

• Progress in Superconductivity
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• 제7권2호
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• pp.140-144
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• 2006

We fabricated the YBCO films on single crystal $LaAlO_3$ substrates via a metal organic deposition (MOD) process. In the process, $Y_2Ba_1Cu_1O_x$ and $Ba_3Cu_5O_8$ powders were dissolved in trifluoroacetic acid (TFA) followed by calcining and firing heat treatments. To evaluate the effects of the firing temperature on YBCO phase formation and critical properties, the films were fired at $750^{\circ}C,\;775^{\circ}C\;and\;800^{\circ}C$ after calcining at $430^{\cric}C$. Microstructure observation indicated that a crack-free surface formed and a strong biaxial texture was developed. The FWHM of out-of-plane texture was measured to be in the range of $4.3^{\cric}-7.0^{\circ}$ for all the films. When the YBCO film was fired at $775^{\cric}C$, it had the highest critical properties: 88.5 K of critical temperature and 16 A/cm-width of critical current ($1MA/cm^2$ as critical current density). On the other hand, those properties were degraded as firing at $750^{\circ}C\;and\;800^{\circ}C$. It is considered that the improved critical values are partly owing to dense and homogeneous microstructure, strong texture, and high oxygen content.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.340-344
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• 2011

Thermoelectric bismuth telluride ($Bi_2Te_3$) films were deposited on $4^{\circ}$ off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than $400^{\circ}C$. However, three dimensional growth mode (3D) was observed at substrate temperature higher than $400^{\circ}C$. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that $Bi_2Te_3$ films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 ${\mu}V/K$ and the power factor was $1.86{\times}10^{-3}\;W/mK^2$ at the substrate temperature of $400^{\circ}C$. $Bi_2Te_3$ films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.

• 반도체디스플레이기술학회지
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• 제4권2호
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• pp.15-19
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• 2005

The organic light-emitting devices(OLEDs) based on fluorescence have low efficiency due to the requirement of spin-symmetry conservation. By using the phosphorescent material, the internal quantum efficiency can reach 100$\%$, compared to 25$\%$ in case of the fluorescent material [1]. Thus recently phosphorescent OLEDs have been extensively studied and showed higher internal quantum efficiency than conventional OLEDs. In this study, we have applied a new Ir complex as a red dopant and fabricated a red phosphorescent OLED on a flexible PC(Polycarbonate) substrate. Also, we have investigated the electrical and optical properties of the devices with a structure of A1/LiF/Alq3/(RD05 doped)BAlq/NPB/2-TNAIA/ITO/PC substrate. Our device showed the lightening efficiency of > 30 cd/A at an initial brightness of 1000 cd/$m^{2}$. The CIE(Commission Internationale de L'Eclairage) coordinates for the device were (0.62,0.37) at a current density of 1 mA/$cm^{2}$. In addition, although the sheet resistance of ITO films on PC substrate is higher than that on glass substrate, the flexible OLED showed much better lightening efficiency without much increase in operating voltage.

• 반도체디스플레이기술학회지
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• 제10권3호
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• pp.67-74
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• 2011

In this study, we have investigated the effect of the substrate temperature on the structural and the electrical characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various substrate temperature. The substrate temperature has been changed from room temperature to $400^{\circ}C$. Samples which were deposited under $250^{\circ}C$ show amorphous structure. The electrical resistivity of crystalline-IZO (c-IZO) film was higher than that of amorphous-IZO (a-IZO) film. And the electrical resistivity showed minimum value near $150^{\circ}C$ of deposition temperature. The OLED device was fabricated with different IZO substrates made by configuration of IZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of the Optical Society of Korea
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• 제13권1호
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• pp.65-74
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• 2009

Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at $200^{\circ}C$ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to $2{\times}10^{-4}\;{\Omega}\;cm$ while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers. Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+$Alq_3$)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+$Alq_3$)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.

• 한국유기농업학회지
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• 제7권1호
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• pp.129-135
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• 1998

암면경, 펄라이트경 및 코코피트경 토마토의 생장촉진에 미치는 근권세균류의 영향을 구명하기 위하여 $Azospirilham\;sp.(4.5{\times}10^7cells/g),\;Rhodopseudomonas\;sp.(5.8{\times}10^5cells/g),\;Pseudomonas\;sp.(6.1{\times}10^6cells/g$) 및 Bacillus sp. 와 Corynebacterium glutamicum의 융합체($9.1{\times}10^5cells/g$) 등의 군주를 근권에 처리하였다. 군주의 근권처리시 토마토의 전반적인 생장이 대조구에 비해서 촉진되었으며, 식물생장촉진효과가 가장 우수한 군주는 Azospirillum sp.였다. 군주에 의한 식물생장 촉진 효과가 높은 재배방식 및 배지는 코코피트경 > 필라이트경 = 암면경 등의 순이었다.

• 공업화학
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• 제23권2호
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• pp.125-130
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• 2012

현재 화석연료사용의 급증으로 인한 지구온난화와 자원고갈의 문제가 전세계적으로 크게 대두되어지고 있다. 이를 해결하기 위해 세계적으로 재생 가능한 바이오매스의 개발에 관심을 기울이고 있다. 바이오가스는 다양한 바이오매스로부터 생산된 기체상태의 연료로 전력생산 및 기존 난방용 연료와 자동차연료로 대체할 수 있는 친환경적 석유대체연료이다. 우리나라의 유기성폐기물은 발생량의 상당부분을 차지하는 음식물쓰레기와 가축분뇨는 매년 증가 추세에 있으며, 유기성폐기물에서 발생하는 가스는 60% 이상의 고농도 메탄을 함유하고 있다. 이를 에너지원으로 이용할 경우 에너지의 효율적 이용에 큰 효과를 기대할 수 있다. 본 논문에서는 국내 신재생에너지로서 바이오가스의 현황을 살펴보고자 한다.

• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.53-58
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• 2010

In this study, we have investigated the effect of the ambient gases on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering under various ambient gases (Ar, $Ar+O_2$ and $Ar+H_2$) at $150^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.1sccm to 0.5sccm, respectively. All the samples show amorphous structure regardless of ambient gases. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under $Ar+O_2$ while under $Ar+H_2$ atmosphere the electrical resistivity showed minimum value near 0.5sccm of $H_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made by configuration of IZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current densityvoltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.