• Journal of the Korean Vacuum Society
• /
• v.19 no.2
• /
• pp.148-154
• /
• 2010

We have fabricated $SiO_2$ oxidation thin films by TCP-CVD (transformer coupled plasma chemical vapor deposition) method for passivation layer of OLED (organic light emitting diode). The purpose of this paper is to control and estimate the deposition rate and refracive index characteristics with process parameters. They are power, gas condition, distance of source and substrate and process temperature. The results show that transmittance of thin films is over 90%, rapid deposition rate and stable reflective index from 1.4 to 1.5 at controled process conditions. They are $SiH_4$ : $O_2$ = 30 : 60 [sccm] gas condition, 70 [mm] distance of source and substrate, no-biased substrate and under 80 [$^{\circ}C$] process temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.4
• /
• pp.281-285
• /
• 2020

Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.

• Korean Journal of Materials Research
• /
• v.27 no.12
• /
• pp.699-704
• /
• 2017

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.182.1-182.1
• /
• 2013

Silver (Ag)는 높은 반사율을 가지고 있어 Top-Emission Organic Light Emitting Diode (T-OLED)의 반사전극으로 사용하기 적합하지만 일함수가 낮은 단점 (4.3 eV)을 가지고 있다. 이런 낮은 일함수를 증가시키기 위하여 Ag 박막 표면을 산화시켜 일함수를 증가시키기 위한 연구가 진행중에 있으며, 이 연구에서는 UV로 $O_3$을 발생시켜 Ag 박막 표면을 산화시키기 위한 연구를 진행하였다. 특히, Ag 박막 표면의 일함수 변화를 측정하기 위하여 SPM (Scanning Probe Microscopy)의 KPFM (Kelvin Probe Force Microscopy) mode를 적용하여 nano 영역에서의 일함수 변화를 surface potential로 측정하여 UV 표면 산화에 의한 표면 일함수 형상을 확인하였다. Ag 박막은 rf magnetron sputter를 사용하여, Si 기판위에 300nm 두께로 증착시켰다. 이후 $O_3$ 발생되는 UV 램프로 Ag 박막 표면 30초 간격으로 최대 5분간 산화시켰으며, 이후 KPFM mode를 사용하여 산화 시간에 따른 Ag 박막 표면의 potential 변화를 측정하였다. 0~3분간 산화된 Ag 박막 표면의 potential은 약 6 mV로 일정하였으나 3분 이후 최대 110 mV까지 급격하게 변화하는 것을 확인할 수 있었다. Ag 박막 표면의 RMS roughness는 UV 산화처리 전0.7 nm였으나, potential이 급격하게 증가하는 시점인 3분 이후 2.83 nm로 약 400% 이상 증가하였다. 이를 통해 $O_3$ 발생 UV 램프로 산화된 Ag 박막의 표면 물성은 처리 시간에 따라 급격히 변하는 것을 확인하였다.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.1
• /
• pp.92-96
• /
• 2019

In the presence of ${\mu}-tip$ embedded in a slot-die head for stripe coatings, there arises the capillary flow that limits an increase of the stripe density, which is required for the potential applications in organic light-emitting diode displays. With an attempt to suppress it, we have employed a computational fluid dynamics software and performed simulations by varying the ${\mu}-tip$ length and the contact angles of the head lip and ${\mu}-tip$. We have first demonstrated that such a capillary flow phenomenon (a spread of solution along the head lip) observed experimentally can be reproduced by the computational fluid dynamics software. Through simulations, we have found that stronger capillary flow is observed in the hydrophilic head lip with a smaller contact angle and it is suppressed effectively as the contact angle increases. When the contact angle of the head lip increases from $16^{\circ}$ to $130^{\circ}$, the distance a solution can reach decreases sharply from $256{\mu}m$ to $44{\mu}m$. With increasing contact angle of the ${\mu}-tip$, however, the solution flow along the ${\mu}-tip$ is disturbed and thus the capillary flow phenomenon becomes more severe. If the ${\mu}-tip$ is long, the capillary flow also appears strong due to an increase of flow resistance (electronic-hydraulic analogy). It can be suppressed by reducing the ${\mu}-tip$ length, but not as effectively as reducing the contact angle of the head lip.

• Journal of the Korean Chemical Society
• /
• v.63 no.3
• /
• pp.151-159
• /
• 2019

The TADF properties for carbazol-dicyanobenzene, carbazol-diphenyl sulfone, carbazol-benzonitrile derivatives as OLED candidate materials are theoretically investigated using density functional theory (DFT) with $6-31G^{**}$, cc-pVDZ, and cc-pVTZ basis sets. The optimized geometries, harmonic vibrational frequencies, and HOMO-LUMO energy separations are predicted at the B3LYP/$6-31G^{**}$ level of theory. The harmonic vibrational frequencies of the molecules considered in this study show all real numbers implying true minima. The time dependent density functional theory (TD-DFT) calculations have been also applied to investigate the absorption and emission wavelength (${\lambda}_{max}$), energy differences (${\Delta}E_{ST}$) between excited singlet ($S_1$) and triplet ($T_1$) states of candidate materials.

• Journal of the Semiconductor & Display Technology
• /
• v.20 no.4
• /
• pp.157-160
• /
• 2021

As an insulator for a thin film transistor(TFT) and an encapsulation material of organic light emitting diode(OLED), aluminum oxide (Al₂O₃) has been widely studied using several technologies. Especially, in spite of low deposition rate, atomic layer deposition (ALD) has been used as a process method of Al₂O₃ because of its low process temperature and self-limiting reaction. In the Al₂O₃ deposition by ALD method, Ar Purge had some crucial effects on the film properties. After reaction gas is injected as a formation of pulse, an inert argon(Ar) purge gas is injected for gas desorption. Therefore, the process parameter of Ar purge gas has an influence on the ALD deposited film quality. In this study, Al₂O₃ was deposited on glass substrate at a different Ar purge time and its structural characteristics were investigated and analyzed. From the results, the growth rate of Al₂O₃ was decreased as the Ar purge time increases. The surface roughness was also reduced with increasing Ar purge time. In order to obtain the high quality Al₂O₃ film, it was known that Ar purge times longer than 15 sec was necessary resulting in the self-limiting reaction.

• Journal of the Korean Institute of Gas
• /
• v.27 no.4
• /
• pp.1-11
• /
• 2023

The size of the OLED material market is expected to grow from $1.1 billion in 2019 to $2.3 billion in 2023, with an average annual sustainable growth of more than 19%. Among the facilities mainly used by OLED material manufacturers, accidents such as fire, explosion, and leakage frequently occur when using filtration equipment, so it is necessary to improve the risk when using filtration equipment. In this study, it was divided into four main processes, namely, assembly and disassembly process, filtration process, wet cake recovery process, and washing process in order to derive the risks associated with the use of filtration equipment. Hazard factors were derived by conducting accident case investigations, preliminary interviews, and surveys. For the analysis of questionnaire results, statistical analysis such as frequency analysis and Pearson chi-square test analysis was performed using SPSS 21, and risk improvement measures were suggested using the analyzed results. It is expected that this study will serve as a basis for dealing with safety and risk factors that may occur as the size of the OLED market expands.

• Clean Technology
• /
• v.27 no.1
• /
• pp.9-16
• /
• 2021

Since the active matrix organic light-emitting diode (AMOLED) encapsulation process is very vulnerable to moisture and oxygen, high-purity nitrogen with minimal moisture and oxygen must be used. In this study, a copper-based catalyst used to remove oxygen from nitrogen in the AMOLED encapsulation process was optimized. Two-component and three-component catalysts composed of CuO, Al2O3, or ZnO were prepared through a co-precipitation method. The prepared catalysts were characterized by using BET, XRD, TPR, and XRF analysis. In order to verify the oxygen removal performance of the catalyst, several catalytic reactions were conducted in a fixed bed reactor, and the corresponding oxygen contents were measured through an oxygen analyzer. In addition, reusability of the catalysts was proven through repetitive regeneration. The properties and oxygen removal capacity of the catalysts prepared with CuO and Al2O3 ratios of 6 : 4, 7 : 3, and 8 : 2 were compared. The number of active sites of the catalyst with a ratio of CuO and Al2O3 of 8 : 2 was the highest among the 2-component catalysts. Moreover, the reducibility of the catalyst with a ratio of CuO and Al2O3 of 8 : 2 was the best as it had the highest CuO dispersion. As a result, the oxygen removal ability of the catalyst with a ratio of CuO and Al2O3 of 8 : 2 was the best among the 2-component catalysts. The best oxygen removal capacity was obtained when 2wt% of ZnO was added to the sub-optimized catalyst (i.e., CuO : Al2O3 = 8 : 2) probably due to its outstanding reducibility. Furthermore, the optimized catalyst kept its performance during a couple of regeneration tests.

• Korean Chemical Engineering Research
• /
• v.47 no.4
• /
• pp.418-423
• /
• 2009

MWCNT(multi-wall carbon nanotube)-doped PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)), used as a HIL(hole injection layer) material in OLEDs(organic light emitting diodes), was spin-coated on to the ITO glass to form PEDOT:PSS-MWCNT nano composite thin film. Morphology and transparency characteristics of nano composite thin films with respect to the loading percent of MWCNT have been investigated using FT-IR, UV-Vis and SEM. Furthermore, ITO/PEDOT:PSS-MWCNT/NPD/$Alq_3$/Al devices were fabricated, and then J-V and L-V characteristics were investigated. Functional group-incorporated MWCNT was prepared by acid treatment and showed good dispersion property in PEDOT:PSS solution. PEDOT:PSS-MWCNT thin films possessed good transparency property. For multi-layered devices, it was shown that as the loading percent of MWCNT increased, the current density increased but the luminance dramatically decreased. It might be conclusively suggested that the enhanced charge mobility by MWCNT could increase the current density but the hole trapping property of MWCNT could dramatically decrease the hole mobility in the current devices.