• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.84-84
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• 2010

In this study, we report on the novel lithographic patterning method to fabricate organic-semiconductor devices based on photo and e-beam lithography with well-known silicon technology. The method is applied to fabricate pentacene-based organic field effect transistors. Owing to their solubility, sub-micron sized patterning of P3HT and PEDOT has been well established via micromolding in capillaries (MIMIC) and inkjet printing techniques. Since the thermally deposited pentacene cannot be dissolved in solvents, other approach was done to fabricate pentacene FETs with a very short channel length (~30nm), or in-plane orientation of pentacene molecules by using nanometer-scale periodic groove patterns as an alignment layer for high-performance pentacene devices. Here, we introduce the atomic layer deposition of $Al_2O_3$ film on pentacene as a passivation layer. $Al_2O_3$ passivation layer on OTFTs has some advantages in preventing the penetration of water and oxygen and obtaining the long-term stability of electrical properties. AZ5214 and ma N-2402 were used as a photo and e-beam resist, respectively. A few micrometer sized lithography patterns were transferred by wet and dry etching processes. Finally, we fabricated sub-micron sized pentacene FETs and measured their electrical characteristics.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.47-52
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• 2007

Organic field-effect transistors (OFETS) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with varying channel length. The CuPc FET device was made a top-contact type and the channel length was a $100\;{\mu}m,\;50\;{\mu}m,\;40\;{\mu}m,\;and\;30\;{\mu}m$ and the channel width was a fixed at 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with varying channel length (L) and we calculated the effective mobility. Also, we measured a capacitance-voltage (C-V) by applied bias voltage with varying frequency at 43, 100, 1000 Hz.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.930-933
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.389-390
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• 2008

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 추계종합학술대회 B
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• pp.619-621
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.506-507
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel device was width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집
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• pp.12-13
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Journal of Information Display
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• 제4권2호
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.15-19
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• 2012

Presented herein are the results of the study that was conducted on the electrical characteristics of organic field-effect transistors based on poly(3-hexylthiophene), particularly the thickness and annealing temperature of their active layer is varied. The changes in field-effect mobility and current on/off ratio were explored. It was observed that both increasing annealing temperature from $60^{\circ}C$ to $100^{\circ}C$ and various concentrations influence the trade-off relations between the mobility and current on/off ratio. The surface morphology of the 2-${\mu}m^2$ area with various thicknesses was scanned via atomic-forcemicroscopy(AFM) to verify the relationship between surface morphology, which is related to the thickness of the film, and device performance.

• 접착 및 계면
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• 제20권4호
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• pp.155-161
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• 2019

공액분자 나노구조체 계면에서의 전하이동 이방성을 이해하는 것은 유기전계효과트랜지스터(OFET)에서 구조-물성 상관관계를 규명하는데 중요하다. 본 연구에서는 대표적인 코페이셜 적층구조를 가진 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) 유기반도체 단결정과 산화물 계면에서 전하이동도 이방성을 연구하였다. 용매치환공정을 이용해 유기단결정을 산화실리콘 절연체 표면에 성장시키고 유기단결정/산화물 계면에서 전하이동을 유도할 수 있도록 OFET 소자를 완성하였다. TIPS-pentacene OFET에서 최고/최저 전하이동도 이방성은 5.2로 관찰되었다. TIPS-pentacene의 전하이동을 담당하는 공액부의 최인접부와의 상호작용을 분석한 결과, HOMO 준위 커플링과 전하의 호핑 궤도가 전하이동도 이방성에 기여하는 것으로 밝혀졌다. HOMO 준위 커플링에 기반한 전하이동도 이방성의 정량적 예측은 실험결과와 유사하게 나타났다.