• Title/Summary/Keyword: Organic electrophosphorescent device

Search Result 10, Processing Time 0.041 seconds

Organic Electrophosphorescent Device driven by Organic Thin-Film Transistor (유기 TFT로 구동한 유기 인광발광소자의 연구)

  • Kim, Yun-Myoung;Pyo, Sang-Woo;Kim, Jun-Ho;Shim, Jae-Hoon;Zyung, Tae-Hyung;Kim, Young-Kwan;Kim, Jung-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.11b
    • /
    • pp.312-315
    • /
    • 2001
  • Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT. polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

  • PDF

Organic Electrophosphorescent Device driven by Organic Thin-Film Transistor (유기 TFT로 구동한 유기 인광발광소자의 연구)

  • 김윤명;표상우;김준호;심재훈;정태형;김영관;김정수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.11a
    • /
    • pp.312-315
    • /
    • 2001
  • Recently organic electroluminescent devices have been intensively investigated for using in full-color flat-panel display. Since the quantum efficiency of electrophosphorescent device decrease rapidly as the luminance increase, it is desirable to operate the electrophosphorescent display with active matrix rather than passive matrix. Here we report the study of driving electrophosphorescent diode with all organic thin film transistor(OTFT). The structure of electrophosphorescent diode is ITO/TPD/BCP:Ir(ppy)$_3$/BCP/Alq$_3$/Li:Al/Al. In OTFT, Polymer is used as an insulator and pentacene as an active layer. Detailed performance of the integrated device will be discussed.

  • PDF

Electrophosphorescent organic light-emitting diodes with modified hole blocking layer

  • Shin, Y.C.;Baek, H.I.;Lee, C.H.
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2006.08a
    • /
    • pp.1042-1045
    • /
    • 2006
  • The electrical and optical properties of electrophosphorescent organic light-emitting diodes (OLEDs) with modified hole blocking layer (HBL) were investigated. Well-known 2,9-dimethyl-4,7- diphenyl-1,10-phenanthroline (BCP) HBL is mixed with electrophosphorescent host material (4,4'-N,N'- dicarbazole-biphenyl: CBP) or electrophosphorescent dopant material (fac-tris(2-phenylpyridine) iridium: $Ir(ppy)_3$) or both. The highest external quantum efficiency was obtained in the device with $BCP-CBP-Ir(ppy)_3$ mixed HBL and we attribute this result to the additional charge recombination in mixed-HBL.

  • PDF

An Organic Electrophosphorescent Device Driven by All-Organic Thin-Film Transistor using Polymeric Gate Insulator

  • Pyo, S.W.;Shim, J.H.;Kim, Y.K.
    • Journal of Information Display
    • /
    • v.4 no.2
    • /
    • pp.1-6
    • /
    • 2003
  • In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.

Energy Transfer and Device Performance in Polymer Based Electrophosphorescent Light Emitting Diodes and Effect of Ligand Modification in the Optical and Electrical Properties of Phosphorescent Dyes (고분자 전기인광소자에서의 에너지 전이, 소자 특성 및 인광염료의 리간드 변화에 따른 광학적, 전기적 특성 변화)

  • Lee Chang-Lyoul;Das R. R.;Noh Young-Yong;Kim Jang-Joo
    • Polymer(Korea)
    • /
    • v.29 no.2
    • /
    • pp.107-121
    • /
    • 2005
  • Electrophosphorescent light emitting diodes (LEDs) using phosphorescent dyes as triplet emitter, which incorporate a heavy metal atom to mix singlet and triplet states by the strong spin-orbit coupling, can achieve the theoretically $100\%$ internal quantum efficiency. In this paper, we report on the performance and the energy transfer mechanism of polymer based highly efficient electrophosphorescent LEDs. The effect of phase separation and aggregation to the energy transfer between polymer hosts and phosphorescent guests and performance of polymer electrophosphorescent LEDs were investigated. Finally, the effect of introducing substitute group and ligand modification of phosphorescent dyes on optical and electrical properties are reported.

New polymeric host material for efficient organic electro phosphorescent devices

  • Jung, Choong-Hwa;Park, Moo-Jin;Eom, Jae-Hoon;Shim, Hong-Ku;Lee, Seong-Taek;Yang, Nam-Choul;Liand, Duan;Suh, Min-Chul;Chin, Byung-Doo;Hwang, Do-Hoon
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2009.10a
    • /
    • pp.843-845
    • /
    • 2009
  • A polymeric host for triplet emitters composed of N-alkylcarbazole and tetramethylbenzene units was successfully synthesized. Efficient energy transfer was observed between this polymeric host and green phosphorescent dyes. The device fabricated using 5 wt% green 1 in the polymeric host as the emitting layer showed the best performance. Thin films of this host-guest system, exhibiting clear stripe patterns could be prepared through the LITI process. The patterned films were then used to fabricate electrophosphorescent devices, which show performance characteristics similar to those of spin-coated devices. The new host material is a good candidate to be used in polymer-based full-color electrophosphorescent light-emitting displays.

  • PDF

Deep red electrophosphorescent organic light-emitting diodes based on new iridium complexes

  • Gong, Doo-Won;Kim, Jun-Ho;Lee, Kum-Hee;Yoon, Seung-Soo;Kim, Young-Kwan
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2006.08a
    • /
    • pp.1075-1078
    • /
    • 2006
  • New iridium complex was synthesized and demonstrated a deep red light emission in organic light-emitting diodes (OLEDs). The maximum luminance of 8320 cd/m2 at 15 V and the luminance efficiency of 2.5 cd/A at 20 mA/cm2 were achieved. The peak wavelength of the electroluminescence was at 626 nm with the CIE coordinates of (0.69, 0.30), and the device also showed a stable color chromaticity with various voltages.

  • PDF

Transient characteristics of top emission organic light emitting diodes with red phosphorescent (적색 인광 도판트를 이용한 Top emission OLED의 Transient 특성)

  • Lee, Chan-Jae;Moon, Dae-Gyu;Han, Jeong-In
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.05a
    • /
    • pp.153-156
    • /
    • 2005
  • In this study, we have investigated transient properties of top emission organic light emitting diode (OLED) with a red electrophosphorescent dopant. The emission spectrum shows a strong peak at 620 nm accompanied with a small peak at 675 nm in the red region. Time evolution of electrophosphorescence reveals a decay time of 703 ms at a voltage pulse of 5 V in a device with an emitting area of 20 $mm^2$. Rise and delay times vary from 450 to 14 ms and 73 to 3 ms, respectively, as the voltage amplitude increases from 4.5 to 10 V. These results are compared with the red emitting device without an electron injection layer.

  • PDF

Controlled Charge Carrier Transport and Recombination for Efficient Electrophosphorescent OLED

  • Chin, Byung-Doo;Choi, Yu-Ri;Eo, Yong-Seok;Yu, Jai-Woong;Baek, Heume-Il;Lee, Chang-Hee
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2008.10a
    • /
    • pp.1418-1420
    • /
    • 2008
  • In this paper, the light emitting efficiency, spectrum, and the lifetime of the phosphorescent devices, whose emission characteristics are strongly dominated not only by the energy transfer but also by the charge carrier trapping induced by the emissive dopant, are explained by differences in the energy levels of the host, dopant, and nearby transport layers. On the basis of our finding on device performance and photocurrent measurement data by time-of-flight (TOF), we investigated the effect of the difference of carrier trapping dopant and properties of the host materials on the efficiency roll-off of phosphorescent organic light emitting diode (OLED), along with a physical interpretation and practical design scheme, such as a multiple host system, for improving the efficiency and lifetime of devices.

  • PDF

Red Electrophosphorescent Organic Light-emitting Diodes Based on New Iridium Complexes. (새로운 이리듐 화합물을 이용한 적색 인광 유기 발광 다이오드)

  • Gong, Doo-Won;Kim, Jun-Ho;Lee, Kum-Hee;Yoon, Seung-Soo;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.06a
    • /
    • pp.73-74
    • /
    • 2006
  • New iridium complexes that have carbonyl group were synthesized and demonstrated various red light emission in organic light-emitting diodes (OLEDs). The maximum luminance of $57000{\sim}15300\;cd/m^2$ at 15 V and the luminance efficiency of 22.8~5.6 cd/A at $20\;mA/cm^2$ were achieved respectively. The peak wavelength of the electroluminescence were at 570~604 nm and the device also showed a stable color chromaticity with various voltages.

  • PDF