• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.654-654
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• 2013

One of the most important yet unresolved problems in molecular electronics is the controversy over the number and nature of multiple conductance peaks in single-molecule junctions. Currently, there are three competing explanations of this observation: (1) manifestation of different molecule-electrode contact geometries, (2) formation of gauche defects within the molecular core, (3) involvement of different electrode surface orientations [1]. However, the exact origin of multiple conductance peaks is not yet fully understood, which indicates our incomplete understanding of the scientifically as well as techno-logically important organic-metal contacts. To theoretically resolve this problem, we previously applied a multiscale computational approach that combines force fields molecular dynamics (FF MD), density functional theory (DFT), and matrix Green's function (MGF) calculations [2] to a thermally fluctuating haxanedithiol (C6DT) molecule stretched between flat Au(111) electrodes, but could observe only a single conductance peak [3]. In this presentation, using DFT geometry optimizations and MGF calculations, we consider molecular junctions with more realistic molecule-metal contact conformations and Au(111) electrode surface directions. We also conduct DFT-based molecular dynamics for the highly stretched junction models to confirm our conclusion. We conclude that the S-Au coordination number should be the more dominant factor than the electrode surface orientation.

• ETRI Journal
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• v.31 no.6
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• pp.653-659
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• 2009

We have investigated the channel protection layer (PL) effect on the performance of an oxide thin film transistor (TFT) with a staggered top gate ZnO TFT and Al-doped zinc tin oxide (AZTO) TFT. Deposition of an ultra-thin PL on oxide semiconductor films enables TFTs to behave well by protecting the channel from a photo-resist (PR) stripper which removes the depleted surface of the active layer and increases the carrier amount in the channel. In addition, adopting a PL prevents channel contamination from the organic PR and results in high mobility and small subthreshold swings. The PL process plays a critical role in the performance of oxide TFTs. When a plasma process is introduced on the surface of an active layer during the PL process, and as the plasma power is increased, the TFT characteristics degrade, resulting in lower mobility and higher threshold voltage. Therefore, it is very important to form an interface using a minimized plasma process.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.30 no.3
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• pp.1-8
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• 2016

In this paper, we proposed a new driving scheme to reduce the motion blur and save the power for OLEDs(organic light emitting diodes). We adopted a DVS (dynamic voltage scaling) method to reduce power consumption and the division of TV field to improve motion blur. In the proposed scheme, BEW (Blur Edge Width) was decreased to the ratio of 1/4 compared to the conventional scheme under the optimal conditions. In this scheme, the gray levels to which the DVS method can be applied were divided into much smaller groups depending on the number of subfields. Therefore, our scheme does not guarantee less power consumption for every image compared to the conventional scheme. However, the new scheme can move the gray levels adopting the DVS to higher gray levels. Thus, we can save power even when having images at high gray levels.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.245-247
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• 1996

The ferroelectric $Pb(Zr_xTi_{1-x})O_3$ (20/80, 80/20) heterolayered thin films were fabricated from an alkoxide-based by Sol-Gel method. The PZT(20/80) and PZT(80/20) stock solution were made and spin-coated on the Pt/Ti/$SiO_2$/Si substrate by turns. Each layers were baked to remove the organic materials at 300[$^{\circ}C$] for 30[min]. and sintered at 650[$^{\circ}C$] for 1[hr]. This procedure was repeated 5 times. At this time the thickness of thin films were about 4000[$\AA$]. Relative dielectric constant and remanent polarization of the PZT heterolayered thin films were 1200, 27.10 [${\mu}C/cm^2$], respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.207.2-207.2
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• 2013

Oxide-based thin film transistors have been attempted as powerful candidates for driving circuits for active-matrix organic light-emitting diodes and transparent electronics. The oxide TFTs are based on the amorphous multi-component oxides involving zinc, indium, and/or tin elements as main cation sources. The current work employed RF sputtering in order to deposit zinc-tin oxide thin films applicable to transparent oxide thin film transistors. The deposited thin film was characterized and probed in terms of materials and devices. The physical/chemical characterizations were performed using X-ray diffraction, Atomic Force Microscopy, Spectroscopic Ellipsometry, and X-ray Photoelectron Spectroscopy. The thin film transistors were fabricated using a bottom-gated structure where thermally-grown silicon oxide layers were applied as gate-dielectric materials. The inherent properties of oxide thin films are combined with the corresponding device performances with the aim to fabricating the multi-component oxide thin films being optimized towards transparent electronics.

• Electronics and Telecommunications Trends
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• v.34 no.4
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• pp.89-97
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• 2019

The olfactory bio technology is largely based on its corresponding recognition technology and smell stimulus that acquires, analyzes, and processes volatile organic compounds present in chemical molecules, which are present in the breath or air evoked by an electronic nose artificially imitating the human biological nose. The olfactory bio technology is also based on a scent display technology that automatically diverges various digital flavors based on aesthetics, concentration, duration, and intensity information required to enhance the sensibility using a computer. Recently, attempts have been made to apply noninvasive screening of dementia by sensing, analyzing, encoding, and transmitting bio information obtained through an olfactory interface, both domestically and externally; further, the olfactory medical content technology has been applied to delay or reduce the onset of dementia. In this study, we will focus on early screening of dementia using olfactory biology information and dementia cognitive enhancer content that delays or reduces the onset of dementia.

• Korean Chemical Engineering Research
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• v.46 no.2
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• pp.402-407
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• 2008

Recent popularity in mobile electronics requires higher standard on the mechanical strength of electronic packaging. Thus, the method of soldering between chip and substrate in electronic packaging process is changing from conventional method using intermetallic compound to a new method using organic solderability preservative (OSP) in order to improve the stability and the reliability of final product. Since current organic solder preservatives have several serious problems like thermo-stability during packaging process, however, it is necessary to develop new OSPs having thermo-stability. The main purpose of this study is to investigate the effect of MeOH/IPA (Isopropyl alcohol) ratio on the fluxing of a new OSP, developed in previous research, andto find out an optimum formulation of flux components for the application of the OSP in current packaging process. As a result of this study, it was revealed that higher MeOH/IPA ratio in flux showed better performance of fluxing a new OSP.

• Progress in Medical Physics
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• v.26 no.2
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• pp.72-78
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• 2015

Organic solvents are known toxic effects like vertigo, behavioral obstacle, distracting, and peripheral neuropathy in neuron areas. However, there have been few studies how neurotoxic solvents-exposed workers are affected by the cognitive load of preceding working memory tasks. Therefore, we used fMRI as to measure the neural correlates of working memory impairment in occupational workers who had from chronic exposure to organic solvent. Twenty-nine solvent-exposed workers were included in this study. Each participant concluded the verbal N-back tasks (1- and 2-back) during the fMRI acquisition. Within-group analyses showed fronto-parietal networks were active in each condition. Direct comparisons between 1- and 2-back showed higher activation during the 2-back than 1-back. We found that increased activation of these regions at lower task demand is associated with increased cost of implementing.

• Journal of Sensor Science and Technology
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• v.3 no.1
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• pp.40-45
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• 1994

$112^{\circ}$ rot. x-cut $LiTaO_{3}$ wafer was used as the substrate of SAW gas sensor. Dual delay line SAW device with IDTs which consist of the reference delay line and the sensing delay line was fabricated using photolithigraphy. Each IDTs had 10 finger pairs and finger spacing is 10 microns. One delay line channel is the reference, while the second is the sensing channel with Pb-phthalocyanine film in the propagation path. Pb-phthalocyanine film which is p-type organic semiconductor was evaporated in $10^{-5}$ torr vacuum using shadow mask selectively. Dual delay line oscillator was constructed by using the rf amplifier and AGC. Frequency of the IDTs had the range of $87{\sim}$89 MHz oscillation frequency. Oscillation frequency shifts were investigated as a function of the temperature and the concentration of $NO_{2}$ gas.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.1.1-1.1
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• 2011

Printed electronics based on the direct writing of solution processable functional materials have been of paramount interest and importance. In this talk, the synthesis of printable inorganic functional materials (conductors and semiconductors) for thin-film transistors (TFTs) and photovoltaic devices, device fabrication based on a printing technique, and specific characteristics of devices are presented. For printable conductor materials, Ag ink is designed to achieve the long-term dispersion stability and good adhesion property on a glass substrate, and Cu ink is sophisticatedly formulated to endow the oxidation stability in air and even aqueous solvent system. The both inks were successfully printed onto either polymer or glass substrate, exhibiting the superior conductivity comparable to that of bulk one. In addition, the organic thin-film transistor based on the printed metal source/drain electrode exhibits the electrical performance comparable to that of a transistor based on a vacuum deposited Au electrode. For printable amorphous oxide semiconductors (AOSs), I introduce the noble ways to resolve the critical problems, a high processing temperature above $400^{\circ}C$ and low mobility of AOSs annealed at a low temperature below $400^{\circ}C$. The dependency of TFT performances on the chemical structure of AOSs is compared and contrasted to clarify which factor should be considered to realize the low temperature annealed, high performance AOSs. For photovoltaic application, CI(G)S nanoparticle ink for solution processable high performance solar cells is presented. By overcoming the critical drawbacks of conventional solution processed CI(G)S absorber layers, the device quality dense CI(G)S layer is obtained, affording 7.3% efficiency CI(G)S photovoltaic device.