Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Structural and Dielectric Properties of PZT(20/80)/PZT(80/20) Heterolayered Thin Films Prepared by Sol-Gel Method.

Sol-Gel법으로 제작한 PZT(20/80)/PZT(80/20) 이종층 박막의 구조 및 유전특성

  • 심광택 (광운대학교 전자재료공학과) ;
  • 정장호 (광운대학교 전자재료공학과) ;
  • 이영희 (광운대학교 전자재료공학과) ;
  • 박인길 (신성전문대학 전자과) ;
  • 이성갑 (서남대학교 전자공학과)
  • Published : 1996.11.16
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Abstract

The ferroelectric $Pb(Zr_xTi_{1-x})O_3$ (20/80, 80/20) heterolayered thin films were fabricated from an alkoxide-based by Sol-Gel method. The PZT(20/80) and PZT(80/20) stock solution were made and spin-coated on the Pt/Ti/$SiO_2$/Si substrate by turns. Each layers were baked to remove the organic materials at 300[$^{\circ}C$] for 30[min]. and sintered at 650[$^{\circ}C$] for 1[hr]. This procedure was repeated 5 times. At this time the thickness of thin films were about 4000[$\AA$]. Relative dielectric constant and remanent polarization of the PZT heterolayered thin films were 1200, 27.10 [${\mu}C/cm^2$], respectively.

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