• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• ETRI Journal
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• v.34 no.3
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• pp.361-368
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• 2012

A complete high-frequency small-signal circuit model of a 40 Gb/s butterfly electroabsorption modulator integrated laser module is presented for the first time to analyze and optimize its electro-optic (E/O) response and reflection characteristics. An agreement between measured and simulated results demonstrates the accuracy and validity of the procedures. By optimizing the bonding wire length and the impedance of the coplanar waveguide transmission lines, the E/O response increases approximately 5% to 15% from 20 GHz to 33 GHz, while the signal injection efficiency increases from approximately 15% to 25% over 18 GHz to 35 GHz.

• Current Optics and Photonics
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• v.7 no.4
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• pp.463-470
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• 2023

Hydroxygraphene as a kind of functionalized graphene has important applications in composite, photoelectric and biological materials. In the present study, THz and microfluidic technologies were implemented to study the THz transmission characteristics of hydroxygraphene with different concentrations and residence times in magnetic and electric fields. The results show that the THz transmission intensity decreases with the increase in sample concentration and duration of an applied electric field, while it increases by staying longer in the magnetic field. The phenomenon is analyzed and explained in terms of hydrogen bond, conductivity and scattering characteristics. The results establish a foundation for future research on the THz absorption characteristics of liquid graphene based on microfluidic technology in different external environments. It also provides technical support for the application and development of graphene in THz devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.6-6
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• 2011

Graphene, a monlayer of carbon atoms arrange to form a 2-dimensional honeycomb lattice, exhibits enormous fascinating properties, such as a linear energy dispersion relation, a wide-range optical absorption, high thermal conductivity, and mechanical flexibility [1]. Because the unique material properties of graphene allow it to be a promising building block for the next generation electronic and optoelectronic devices, sometimes graphene-based devices have refereed to be a strong candidate to overcome the intrinsic limitations of conventional semiconductor-based technology [2,3]. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic materials properties and recent progress in applications of graphene and discuss future outlook of graphene-based electronic and optoelectronic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1077-1079
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• 2008

Nanoparticles-induced vertical alignment (NIVA) in the liquid crystal (LC) devices was observed and has been applied successfully on fabricating the hybrid-aligned nematic LC cells and guest-host LC cells. In this talk, we will discuss the characteristics of the electric and optical properties of NIVA-LC cells with different dopant concentrations and demonstrate that nanoparticles can be spin-coated on the substrate at a low temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.67-67
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• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, exhibits fascinating electrical properties, such as a linear energy dispersion relation and high mobility in addition to a wide-range optical absorption and high thermal conductivity. Graphene's outstanding tensile strength allows graphene-based electronic and photonic devices to be flexible, bendable, or even stretchable. Recently many groups have reported high performance electronic and optoelectronic devices based on graphene materials, i.e. field-effect transistors, gas sensors, nonvolatile memory devices, and plasmonic waveguides, in which versatile properties of graphene materials have been incorporated into a flexible electronic or optoelectronic platform. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic material properties and recent progresses in applications of graphene to electronics and optoelectronics and discuss future outlook of graphene-based devices.

• Photonics industry news
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• s.66
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• pp.54-59
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• 2011

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.264-275
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• 2008

Electron mobility has been investigated theoretically in undoped double-gate (DG) MOSFETs of different channel architectures: a relaxed-Si DG SOI, a strained-Si (sSi) DG SSOI (strained-Si-on-insulator, containing no SiGe layer), and a strained-Si DG SGOI (strained-Si-on-SiGe-on-insulator, containing a SiGe layer) at 300K. Electron mobility in the DG SSOI device exhibits high enhancement relative to the DG SOI. In the DG SGOI devices the mobility is strongly suppressed by the confinement of electrons in much narrower strained-Si layers, as well as by the alloy scattering within the SiGe layer. As a consequence, in the DG SGOI devices with thinnest strained-Si layers the electron mobility may drop below the level of the relaxed DG SOI and the mobility enhancement expected from the strained-Si devices may be lost.

• Nano
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• v.13 no.10
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• pp.1850119.1-1850119.6
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• 2018

$Eu^{3+}/Tb^{3+}$ co-doped nanocomposite containing $CeO_2$ nanocrystals was successfully prepared by an in situ sol-gel polymerization approach. High-resolution transmission electron microscopy demonstrated the homogeneous precipitation of $CeO_2$ nanocrystals among the polymethylmethacrylate (PMMA) matrix. The thermal stability and UV-shielding capability of the obtained nanocomposite were improved with increase of $CeO_2$ content. The tuning of the emissive color from green and yellow to red can be easily achieved by varying the dopant species and concentration. These results suggested that the obtained nanocomposite could be potentially applicable in transparent solid-state luminescent devices.

• Photonics industry news
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• s.65
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• pp.50-53
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• 2011