• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.100-100
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• 2016

Among various two-dimensional (2D) materials, 2D semiconductors and insulators have attracted a great deal of interest from nanoscience community beyond graphene, due to their attractive and unique properties. Such excellent characteristics have triggered highly active researches on 2D materials, such as hexagonal boron nitride (hBN), molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). New physics observed in 2D semiconductors allow for development of new-concept devices. Especially, these emerging 2D materials are promising candidates for flexible and transparent electronics. Recently, van der Waals heterostructures (vdWH) have been achieved by putting these 2D materials onto another, in the similar way to build Lego blocks. This enables us to investigate intrinsic physical properties of atomically-sharp heterostructure interfaces and fabricate high performance optoelectronic devices for advanced applications. In this talk, fundamental properties of various 2D materials will be introduced, including growth technique and influence of defects on properties of 2D materials. We also fabricate high performance electronic/optoelectronic devices of vdWH, such as transistors, memories, and solar cells. The device platform based on van der Waals heterostructures show huge improvement of devices performance, high stability and transparency/flexibility due to unique properties of 2D materials and ultra-sharp heterointerfaces. Our work paves a new way toward future advanced electronics based on 2D materials.

• Journal of Powder Materials
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• v.24 no.2
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• pp.153-163
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• 2017

Transparent conducting electrodes (TCEs) are attracting considerable attention as an important component for emerging optoelectronic applications such as liquid crystal displays, touch panels, and solar cells owing to their attractive combination of low resistivity (<$10^{-3}{\Omega}cm$) and high transparency (>80%) in the visible region. The solution-based process has unique properties of an easy fabrication procedure, scalability, and low cost compared to the conventional vacuum-based process and may prove to be a useful process for fabricating TCEs for future optoelectronic applications demanding large scale and flexibility. In this paper, we focus on the introduction of a solution-based process for TCEs. In addition, we consider the powder materials used to fabricate solution-based TCEs and strategies to improve their transparent conducting properties.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.20-24
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• 2017

Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated $Cu_2ZnSn(S_xSe_{1-x})_4$ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.631-635
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• 2017

We report facile solution processing of mesoporous hematite (${\alpha}-Fe_2O_3$) thin films for high efficiency solar-driven water splitting. $Fe_2O_3$ thin films were prepared on fluorine doped tin oxide(FTO) conducting substrates by spin coating of a precursor solution followed by annealing at $550^{\circ}C$ for 30 min. in air ambient. Specifically, the precursor solution was prepared by dissolving non-toxic $FeCl_3$ as an Fe source in highly versatile dimethyl sulfoxide(DMSO) as a solvent. The as-deposited and annealed thin films were characterized for their morphological, structural and optical properties using field-emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) and UV-Vis absorption spectroscopy. The photoelectrochemical performance of the precursor (${\alpha}-FeOOH$) and annealed (${\alpha}-Fe_2O_3$) films were characterized and it was found that the ${\alpha}-Fe_2O_3$ film exhibited an increased photocurrent density of ${\sim}0.78mA/cm^2$ at 1.23 V vs. RHE, which is about 3.4 times higher than that of the ${\alpha}-FeOOH$ films ($0.23mA/cm^2$ at 1.23 V vs. RHE). The improved performance can be attributed to the improved crystallinity and porosity of ${\alpha}-Fe_2O_3$ thin films after annealing treatment at higher temperatures. Detailed electrical characterization was further carried out to elucidate the enhanced PEC performance of ${\alpha}-Fe_2O_3$ thin films.

• Bulletin of the Korean Chemical Society
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• v.34 no.6
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• pp.1779-1782
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• 2013

N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 $V/{\mu}m$ were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.93-97
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• 2004

Structural and optoelectronic properties of as-synthesized SnO$_2$ nanowires were examined in this study. The SnO$_2$ nanowires were first synthesized by thermal evaporation of ball-milled SnO$_2$ powders in argon atmosphere without the presence of any catalysts, arid their structural properties are then investigated by X-ray diffraction, Raman scattering, scanning electron microscopy, and transmission electron microscopy. This investigation revealed that the synthesized SnO$_2$ nanowires are single-crystalline and that their growth direction is parallel to the [100] direction. In addition, photoresponse of a single SnO$_2$ nanowire was performed with light with above-gap energy, and different characteristics of photoresponses were obtained for the nanowire at ambient atmosphere and in vacuum. The photoresponse mechanism is briefly discussed in this paper.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.28.2-28.2
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• 2011

Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/$TaO_x$/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in $TaO_x$ memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to $10^5$ cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.236-241
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• 2023

Solar cells based on p-conjugated donor-acceptor (D-A) organic molecular systems are a promising alternative to conventional electrical energy generation. D-A molecular systems, which have a triphenylamine (TPA) moiety linked with a benzothiadiazole (BTD) moiety, open the potential development of new small molecule donors for bulk heterojunction (BHJ) solar cells. Here, a series of donor-acceptor-π-acceptor (D-A-π-A) small molecule donors (SMD) derived from triphenylamine (TPA) donor and benzothiadiazole (BTD) acceptor building blocks, were designed for BHJ organic solar cells. The small molecule donors SMD1-4 were studied using density functional theory (DFT) and time dependent-DFT (TDDFT) methods, to understand the effect of cyano and fluorine group functionalization on their properties. The effect of structure alteration by cyano and fluorine group functionalization on the optoelectronic properties, the calculated highest occupied molecular orbitals (HOMOs) and lowest unoccupied molecular orbitals (LUMOs) and the HOMO-LUMO gaps were theoretically explored. The V_oc (open-circuit photovoltage) and fill factor (FF) for SMD1-4 were obtained with a PC₇₁BM acceptor, which showed that these organic small molecules are potential small molecule donors for organic bulk heterojunction solar cells.

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.173-179
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• 2013

Wurtzite nanomaterials, such as ZnO, GaN, and InN, have become a subject of great scientific and technological interest as they simultaneously have piezoelectric and semiconductor properties. In particular, the piezoelectric potential (piezopotential) created by dynamic straining in the nanowires drives a transient flow of current in the external load, converting mechanical energy into electricity. Further, the piezopotential can be used to control the carrier generation, transport, separation, and/or recombination at the metal-semiconductor junction or p-n junction, which is called the piezophototronic effect. This paper reviews the recent advances on the piezophototronic effect to better use the piezophototronic effect to control the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices, such as photon detectors, solar cells and LEDs. This paper also discusses several research and design studies that have improved the output performance of optoelectronic devices.

• Macromolecular Research
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• v.13 no.6
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• pp.521-528
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• 2005

Electrospun polyacrylonitrile (PAN) nanofibers were carbonized with or without iron (III) acetylacetonate to induce catalytic graphitization within the range of 900-1,500$^{circ}C$, resulting in ultrafine carbon fibers with a diameter of about 90-300 nm. Their structural properties and morphologies were investigated. The carbon nanofibers (CNF) prepared without a catalyst showed amorphous structures and very low surface areas of 22-31 $m^{2}$/g. The carbonization in the presence of the catalyst produced graphite nanofibers (GNF). The hydrogen storage capacities of these CNF and GNF materials were evaluated through the gravimetric method using magnetic suspension balance (MSB) at room temperature and 100 bar. The CNFs showed hydrogen storage capacities which increased in the range of 0.16-0.50 wt$\%$ with increasing carbonization temperature. The hydrogen storage capacities of the GNFs with low surface areas of 60-253 $m^{2}$/g were 0.14-1.01 wt$\%$. Micropore and mesopore, as calculated using the nitrogen gas adsorption-desorption isotherms, were not the effective pore for hydrogen storage.