• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.336-336
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• 2011

Over the past decades, organic semiconductors have been investigated intensely for their potential in a wide range of optoelectronic device applications since the organic materials have advantages for very light, flexible and low cost device fabrications. In this study, we fabricated small-molecule organic solar cells (OSCs) based on chloro[subphthalocyaninato]boron(III) (SubPc) as an electron donor and $C_{60}$ as an electron acceptor material. Recently SubPc, a cone-shaped molecule with $14{\pi}$-electrons in its aromatic system, has attracted growing attention in small-molecule OSC applications as an electron-donating material for its greater open-circuit voltage (VOC), extinction coefficient and dielectric constant compared to conventional planar metal phthalocyanines. In spite of the power conversion efficiency (PCE) enhancement of small-molecule OSC using SubPc and $C_{60}$, however, the study on the interface between donor-acceptor heterojunction of this system is limited. In this work, SubPc thin films at various thicknesses were deposited by organic molecular beam deposition (OMBD) and the evolution of surface morphology was observed using atomic force microscopy (AFM) and field emission scanning electron microscopy (FE-SEM). We also investigated the influence of film thickness and surface morphology on the PCE of small-molecule OSC devices.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.446-448
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• 2000

Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, pentacene thin films and electrode materials were deposited by Organic Molecular Beam Deposition (OMBD) and vacuum evaporation respectively. For the gate dielectric layer, OPTMER PC403 photo acryl (JSR Coporation.) was spin-coated and cured at $220^{\circ}C$. Electrical characteristics of the devices were investigated, where the channel length and width was $50{\mu}m$ and 5 mm. It was found that field effect mobility was $0.039\;cm^2V^{-1}s^{-1}$, threshold voltage was -7 V, and on/off current ratio was $10^6$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.159-159
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• 2008

Indium-tin oxides (ITO) films have been widely used as transparent electrodes for optoelectronic devices such as organic light emitting diodes (OLEDs), photovoltaics, touch screen devices, and flat-paneldisplay. In particular, to improve hole injection efficiency in OLEDs, transparent electrodes should have high work-function besides their transparency and low resistivity. Nevertheless, few studies have been made on engineering the work function of ITO for use as an efficient anode. In this study, the effects of a wide range of Nb or Zn doping rate on the changes in work functions of ITO anode were investigated. The Nb or Zn doped ITO films were fabricated on glass substrates using combinatorial sputtering system which yields a linear composition spread of Nb or Zn concentration in ITO films in a controlled manner by co-sputtering two targets of ITO and Nb2O5 or ITO and ZnO. We have also examined the resistivity, transmittance, and other structural properties of the Nb or Zn-doped ITO films. Furthermore, OLEDs employing Nb or Zn-doped ITO anodes were fabricated and the device performances were investigated concerned with the work function changes.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.5.2-5.2
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• 2009

From 10 years ago, the development of nano-devices endeavored to achieve reconstruction of information technology (IT) and nano technology (NT) industry. Among the many materials for the IT and NT industry, zinc oxide (ZnO) is a very promising candidate material for the research of nano-device development. Nano-structures of ZnO-based materials were grown easily via various methods and it attracts huge attention because of their superior electrical and optical properties for optoelectronic devices. Recently, among the various growth methods, MOCVD has attracted considerable attention because it is suitable process with benefits such as large area growth, vertical alignment, and accurate doping for nano-device fabrication. However, ZnO based nanowires grown by MOCVD process were had the principal problems of 1st interfacial layers between substrate and nanowire, 2nd a broad diameter (about 100 nm), and 3rd high density, and 4th critical evaporation temperature of Zinc precursors. In particular, the growth of high performance nanowire for high efficiency nano-devices must be formed at high temperature growth, but zinc precursors were evaporated at high temperature.These problems should be repaired for materialization of ultra high performance quantum devices with quantum effect. For this reason, we firstly proposed the growth method of vertical aligned slim MgZnO nanowires (< 10 nm) without interfacial layers using self-phase separation by introduced Mg at critical evaporation temperature of Zinc precursors ($500^{\circ}C$). Here, the self-phase separation was reported that MgO-rich and the ZnO-rich phases were spontaneously formed by additionally introduced Mg precursors. In the growth of nanowires, the nanowires were only grown on the wurzite single crystal seeds as ZnO-rich phases with relatively low Mg composition (~36 at %). In this study, we investigated the microstructural behaviors of self-phase separation with increasing the Mg fluxes in the growth of MZO NWs, in order to secure drastic control engineering of density,diameter, and shape of nanowires.

• Smart Structures and Systems
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• v.6 no.5_6
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• pp.749-765
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• 2010

There are on-going efforts to utilize guided waves for structural damage detection. Active sensing devices such as lead zirconate titanate (PZT) have been widely used for guided wave generation and sensing. In addition, there has been increasing interest in adopting wireless sensing to structural health monitoring (SHM) applications. One of major challenges in wireless SHM is to secure power necessary to operate the wireless sensors. However, because active sensing devices demand relatively high electric power compared to conventional passive sensors such as accelerometers and strain gauges, existing battery technologies may not be suitable for long-term operation of the active sensing devices. To tackle this problem, a new wireless power transmission paradigm has been developed in this study. The proposed technique wirelessly transmits power necessary for PZT-based guided wave generation using laser and optoelectronic devices. First, a desired waveform is generated and the intensity of the laser source is modulated accordingly using an electro-optic modulator (EOM). Next, the modulated laser is wirelessly transmitted to a photodiode connected to a PZT. Then, the photodiode converts the transmitted light into an electric signal and excites the PZT to generate guided waves on the structure where the PZT is attached to. Finally, the corresponding response from the sensing PZT is measured. The feasibility of the proposed method for wireless guided wave generation has been experimentally demonstrated.

• Journal of Convergence for Information Technology
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• v.11 no.3
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• pp.167-173
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• 2021

There is an increasing interest in manufacturing various electronic devices on a bendable substrate. In this paper, we observed a surface morphology by annealing for 20 minutes at temperatures of 150 ℃, 350 ℃, and 550 ℃, respectively, with samples coated by chromium and aluminum. Data on surfaces are investigated using high-resolution SEM and AFM that can measure roughness up to nm. There is no difference from the sample without heat treatment up to 350 ℃, but the change of crystal grains can be observed at 550 ℃. In the future, for application to the flexible optoelectronic field, additional characteristics such as electrical conductivity and reflectivity will be analyzed and optical devices will be manufactured. In conclusion, we will explore the possibility of applying metal materials to flexible electronic devices.

• Electronics and Telecommunications Trends
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• v.27 no.5
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• pp.1-9
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• 2012

탄소 원자가 육각형의 벌집 모양으로 이차원구조체를 이룬 그래핀은 2004년 처음 실험적으로 흑연으로부터 떼어낼 수 있는 방법이 발표되면서 그 존재가 확인되었고 이후 여러 가지 독특하고 우수한 물성들이 속속 발표되면서 많은 연구자들의 주목을 받고 있다. 수많은 그래핀 연구자들은 천연 그래핀뿐만 아니라 대면적의 그래핀을 성장하고 숨겨진 전기적, 광학적 물성을 밝히고 제어하는 기술에 대한 기초 연구로부터 제어된 그래핀의 물성을 이용한 다양한 전자소자 및 광전소자로의 응용 기술에 대해 많은 연구를 진행하고 있다. 본고에서는 최근에 이루어진 그래핀 기반의 전자소자와 광전소자에 관한 연구 동향을 몇 가지 예와 함께 소개하고 ETRI 그래핀소자창의연구실의 연구주제와 앞으로의 연구 방향에 대해 살펴보고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.283.1-283.1
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• 2016

Tin Oxide(SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. It would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. In addition, SnO2 is commonly used as gas sensors. To fabricate high quality epitaxial SnO2 thin films, a powder sputtering method was used, in contrast to typical sputtering technique with sintered target. Single crystalline sapphire(0001) substrates were used. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using X-ray diffraction, scanning electron microscopy, and atomic force microscopy measurements. We found that the strain evolution of the samples was highly affected by gas environment and growth rate, resulted in the delamination under O2 environment.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.239.2-239.2
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• 2015

Graphene is a most interesting material due to its unique and outstanding properties. However, semi-metallic properties of graphene along with zero bandgap energy structure limit further application to optoelectronic devices. Recently, many researchers have shown that band gap can be induced in the Bernal stacked bilayer graphene. Several methods have been used for the controlled growth of the Bernal staked bilayer graphene, but it is still challenging to control the growth process. In this paper, we synthesize the large area Bernal stacked bilayer graphene using multi heating zone low pressure chemical vapor deposition (LPCVD). The synthesized bilayer graphenes are characterized by Raman spectroscopy, optical microscope (OM), scanning electron microscopy (SEM). High resolution transmission electron microscopy (HRTEM) is used for the observation of atomic resolution image of the graphene layers.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.176-177
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• 2002

1.3 $\mu\textrm{m}$와 1.55 $\mu\textrm{m}$의 발광 파장을 갖는 광통신용 반도체 레이저 다이오드는 지금까지 많은 발전을 해 왔으며 다양하게 응용이 되어 오고 있다. 기존의 장파장 소자들은 InP 기판 위에 성장을 하고 있으며, GaAs 관련된 물질의 적용은 장파장 대역의 이득층 성장의 어려움 때문에 GaAs가 가지고 있는 안정된 장점에도 불구하고 적용되지 못했다. 그러나 1996년 M. Kondow는 GaAs 기판에 격자정합되는 InGaAsN 물질을 제안하였고(1) 그 이후로 레이저 다이오드에 제작에 까지 이르렀으며(2-3) 특히, 표면발광반도체레이저의 상온 연속발진에도 성공하였다. (중략)