• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.333-334
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• 2008

The SCT thin films were deposited on Pt-coated electrode using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 100~500[$^{\circ}C$]. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The maximum dielectric constant of SCT thin film was obtained by annealing at $600^{\circ}C$.

• 약학회지
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• 제43권6호
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• pp.689-695
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• 1999

Hydrotalcite was prepared by reacting with sodium carbonate, magnesium oxide and aluminum sulfate solutions in this study. The optimum synthesis conditions based on the yield of the product were established by applying Box-Wilson experimental design. It was found that the optimum synthesis conditions of hydrotalcite were as follows; reacting temperature : 48~63$^{\circ}C$, concentration of reactant solution : about 20%, molar concentration ratio of two reactants [MgO]/[Al. sulfate] ; 7.35~8.1, temperature of washing water : 34.4~37.4$^{\circ}C$, drying temperature : 74~81.5$^{\circ}C$. The physicochemical properties of hydrotalcite as medicine were studied by use of chemical analysis, D.S.C. thermogram, bulk volume test and acid consuming capacity measurements.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권12호
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• pp.576-580
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• 2006

The $(Sr_{0.85}Ca_{0.15})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode $(Pt/TiN/SiO_2/Si)$ using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film as obtained by annealing at $600^{\circ}C$.

• 한국세라믹학회지
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• 제31권4호
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• pp.436-447
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• 1994

ZnO transparent conducting thin film, which is a strong candidate for a transparent electrical contact in optoelectronic devices, was prepared by the vapour spraying method on the slide glass in nitrogen ambient at the atmospheric pressure. The structural, optical and electrical properties of films show a strong dependence on substrate temperature, and the optimum range of deposition temperature existed to obtain TCO(Transparent Conducting Oxide) films. At the higher temperatures, milky films were obtained. In such optimum range, the bandgap in ZnO films was determined from the spectral dependence of absorption coefficient and electrical characteristics were characterized with by the Hall mobility and carrier concentration.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.274-275
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• 2007

In this study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator application. At the PMN-PZN-PZT ceramics, the influence of the ball-mill time on piezoelectric characteristics was investigated. All the specimens improved according to the increase of the ball-mill time increase. The specimen showed the optimum value when ball-mill time is 60 hour. Their optimum values were density=$7.93g/m^3$, ${\varepsilon}_r=1371$, kp=0.551, Qm=1609, $d_{33}=321pC/N$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.288-289
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• 2007

In this study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator application, PMN-PZN-PZT ceramics were manufactured as a function of the amount of CuO addition and their dielectric and piezoelectric characteristics were investigated. With the amount of CuO addition, the physical characteristics of specimens decreased. The specimens showed the optimum value at 0.5wt%CuO addition. Their optimum values were density=$7.93g/m^3$, ${\varepsilon}_r$=1398, kp=0.560, Qm=1706, $d_{33}$=327pC/N, respectively.

• 설비공학논문집
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• 제16권3호
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• pp.293-302
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• 2004

In this study the optimization of plate-fin type heat sink for the thermal stability is peformed numerically. The optimum design variables are obtained when the temperature rise and the pressure drop are minimized simultaneously. The flow and thermal fields are predicted using the finite volume method and the optimization is carried out by using the sequential quadratic programming (SQP) method which is widely used in the constrained non-linear optimization problem. The results show that when the temperature rise is less than 34.6K, the optimal design variables are as follows; B$_1$=2.468mm, B$_2$=1.365mm, and t=10.962mm. The Pareto optimal solutions are also presented for the pressure drop and the temperature rise.

• 대한설비공학회지:설비저널
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• 제14권1호
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• pp.1-11
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• 1985

Solar/absorption cooling system was analyzed and its operating condition was examined. For the system, the optimum size of absorption refrigerator and collector area should be determined. As the temperature of water supplied to the generator increases, the collector efficiency decreases whereas the coefficient of performance of absorption refrigerator increases up to a certain point, and vice versa for decreasing of the temperature of water supplied to the generator . Thus if the reeling load is given, the appropriate operating condition can be determined between the two opposing trends by simulation program. As an example of the simulation, the case of Jejudo province was studied. Under the conditions (such as weather data and prices of components, etc.) given en the sample calculation, the result shows that the optimum temperature of water supplied to the generator turned out to be $80.3^{\circ}C$, and still shows a large economical disadvantage in present stage compared to the case of conventional vapor compression cooling/heating combined heat pump system.

• 한국초전도ㆍ저온공학회논문지
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• 제12권4호
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• pp.36-40
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• 2010

In this paper, a noble method for rapid cooldown of pulse tube refrigerator (PTR) was proposed and experimentally investigated. An orifice pulse tube refrigerator generates refrigeration effect by expansion PV work at the cold-end, and its amount is affected by the orifice valve opening. There exists the optimum valve opening for maximum cooling capacity and it varies as cold-end temperature. It is verified from simulation results using isothermal model that the optimum valve opening increases as the cold-end temperature increases. In the experiments, a single stage orifice pulse tube refrigerator is fabricated and tested. The fabricated PTR shows 97.5 K of no-load temperature and 10 W at 110 K of cooling capacity with the fixed orifice valve opening. From experiments, the initial cooldown curve with four cases of valve opening control scenario are obtained. And it is experimentally verified that the initial cooldown time can be reduced through the control of orifice valve opening.

• 열처리공학회지
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• 제11권2호
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• pp.99-110
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• 1998

The effects of pre-heat treatment(Q/T) on microstructure and hardness of SCM435 structural steel nitrided by micro-pulse plasma was investigated. The quenching and tempering temperatures for obtaining matrix hardness of SCM435 steel on range of HRC30 to HRC40 desired for machine parts were about $860^{\circ}C$ and $500^{\circ}C$ respectively. The case depth of SCM435 nitrided at $480^{\circ}C$ for 5 hours was independent of pre-heat treatment condition and was approximately $150{\mu}m$. However, hardness and compactness of nitrified layer on Q/T treated specimen were more heigher than annealed specimen. The case depth increased linearly with the increase of nitriding temperature, however, the hardness of nitrified layer decreased with the temperature. Phase mixture of ${\gamma}^{\prime}$-phase($Fe_4N$) and ${\varepsilon}$-phase($Fe_3N$) were detected by XRD analysis in the nitrified layer formed at optimum nitriding condition, and only single ${\gamma}^{\prime}$-phase was detected in the nitrified layer formed at higher nitriding temperature such as $540^{\circ}C$. The optimum nitriding temperature was approximately $480^{\circ}C$ which is lower than tempering temperature for preventing softening behavior of SCM435 matrix during nitriding process and the surface hardness of nitrified layer obtained by optimum preheat treatment condition was about Hv930.