• Korean Journal of Optics and Photonics
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• v.31 no.5
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• pp.213-217
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• 2020

In this study we report a wet-etching-based fabrication method for adiabatic optical-fiber tapers (OFTs), and describe their adiabaticity and HE₁₁ mode evolution at a wavelength of 1550 nm. The profile of the fabricated system satisfies the adiabaticity properties well, and the far-field pattern from the etched OFT shows that the fundamental HE₁₁ mode is maintained without a higher-order mode coupling throughout the tapers. In addition, the measured far-field pattern agrees well with the simulated result. The proposed adiabatic OFTs can be applied to a number of photonic applications, especially fiber-chip packages. Based on the fabricated adiabatic OFT structures, the optical transmission to the inversely tapered silicon waveguide shows large spatial-dimensional tolerances for 1 dB excess loss of ~60 ㎛ (silicon waveguide angle of 1°) and insertion loss of less than 0.4 dB (silicon waveguide angle of 4°), from the numerical simulation. The proposed adiabatic coupler shows the ultrabroadband coupling efficiency over the O- and C-bands.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.166-172
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• 1994

The fiber optic receiver, ETRI APD-FET 1.0, is developed for the application of optical communication. This fiber optic receiver includes PD sub-module and pre-amplifier case. A single lens system is introduced for the PD sub-module. The sub-module consists of the avalenche photodiode(APD), GRIN rod lens, and a single mode fiber. The above components are enclosed into the stainless steel 304L housings. By bevelling the fiber end, the single mode fiber provides less than ~ 28 dB of optical return loss. The area of image focus is controlled by adjusting the length of spacer located in-between the fiber and the GRIN rod lens. The laser welding technique is applied to achieve the maximum coupling efficiency for the joining of each housing. In the pre-amplifier case, GaAs FET pre-amplifier workes for photocurrent amplification and the thermister is mounted to control the APD bias. The performance of ETRI APD-FET1.0 shows the sensitivity of - 30.3 dBm at $10^{-10}$ BER(bit error rate) and 2.5 Gbps optical random signal of $2^{23}-1$ word length. The fiber optic receiver is one of the essensial parts of the transmission module for B-ISDN. Also, the above optical packaging technology will be adapted for the developement of 10 Gbps transmission application 2.5 Gbps 5 Gbps

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.299-308
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• 2004

We proposed more efficient encoding methods that can design a multi-channel multi-level phase only computer-generated hologram(CGH) that can reconstruct many objects simultaneously without a conjugate image. We used a fabrication technique for the pixel oriented CGH for designing the pattern of the proposed multi-channel CGH. We investigated the difference of the optical efficiency(η), mean square error(MSE) and signal-to-noise ratio(SNR) of multi-channel CGHs that were designed by three kinds of encoding methods according to the number of quantization phase levels, and we estimated the performance of the pattern of the proposed multi-channel CGH. Generally, as the number of input objects' reference patterns stored in the CGH is increased, the reconstruction quality of the CGH is degraded. But we observed through computer simulation that the diffraction efficiency of the 1-ch CGH is 70%, and those of the 2-ch, 4-ch, 8-ch CGHs are 62%, 62% and 63%. Therefore we found that the diffraction efficiencies of the multi-channel CGHs using the newly proposed encoding method are similar to that of 1-ch CGH. We implemented the CGH optically using a liquid crystal spatial light phase modulator that consisted of a PAL-SLM efficiently coupled with a XGA type LCD by an optical lens and an LD for illuminating the LCD. We discussed the output images that are reconstructed from the PAL-SLM.

• Korean Journal of Optics and Photonics
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• v.10 no.6
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• pp.500-506
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• 1999

We designed and fabricated a bidirectional optical transceiver module for low cost access network. An integrated chip forming a pin-PD on an 1.3 urn FP-LD was assembled by flip-chip bonding on a Si optical bench, a single mode fiber with an angled end facet was aligned passively with the integrated chip on V-groove of Si-optical bench. Gaussian beam theory was applied to evaluate the coupling coefficients as a function of some parameters such as alignment distance, angle of fiber end facet, vertical alignment error. The theory is also used to search the bottle-neck between transmittance and receiving coupling efficiency in the bi-directional optical system. Tn this paper, we confirmed that reduction of coupling efficiency by the vertical alignment error between laser beam and fiber core axis can be compensated by controlling the fiber facet angle. In the fabrication of sub-module, a'||'&'||' we made such that the fiber facet have a corn shape with an angled facet only core part, the reflection of transmitted laser beam from the fiber facet could be minimized below -35 dE in alignment distance of 2: 30 /J.m. In the same condition, transmitted output power of -12.1 dEm and responsivity of 0.2. AIW were obtained.

• Korean Journal of Optics and Photonics
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• v.5 no.3
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• pp.423-430
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• 1994

We designed and fabricated the single mode fiber pigtailed DFB-LD module for 2.5 Gbps optical communication system. In the design of the DFB-LD module, we made the module divided into two parts of inner sub-module and outer 14-pin butterfly package and cylindrical shaped sub-module contain quasi confocal 2 lens system including optical isolator and electrical connection between these parts via hybrid substrate of bias T circuit. Laser welding was used to assemble the sub-module which requires accurate fixing between optical elements. The fabricated DFB-LD module showed optical coupling efficiency of 20% and - 3 dB small signal response of more than 2.6 GHz. We confirmed mechanical reliability of the module by temperature cycle test where the tested module exhibit optical power fluctuation of less than 10%. Finally we evaluated the performance of the fabricated DFB-LD module as light source of 2.5 Gbps optical communication system, sensitivity of - 30.2 dBm was obtained through 47 km optical fiber transmission under the criterion of $1\times10^{-10}$ BER and transmission penalties were 1.5 dB caused by extinction ratio and 1.0 dB caused by chromatic dispersion of normal single mode fiber. fiber.

• Korean Journal of Optics and Photonics
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• v.28 no.6
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• pp.356-360
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• 2017

Indium tin oxide (ITO) provides high electrical conductivity and transparency at visible and near-IR wavelengths. ITO is widely used as a transparent electrode for the fabrication of LCDs, OLEDs, and many kinds of optical applications. It is widely employed for electrodes in various electric and display sectors because of its transparency in the visible range and high conductivity. Therefore, one issue is removing a specific area of a layer of material such as ITO or metallic film on a substrate, without affecting the properties of the substrate. ITO-on-glass removal using a laser is friendlier to the environment than traditional methods. In this study, ablation of ITO film on glass using a femtosecond-laser micromachining system (wavelength 1026 nm, pulse duration 150 fs) and a nanosecond-laser micromachining system (wavelength 1027 nm, pulse duration 5 ns) are described, compared, and analyzed.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.16 no.1
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• pp.96-101
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• 2017

We have developed a compact desktop-sized nanopatterning system driven by the Roll-to-Roll (R2R) nanoimprinting (NIL) principle. The system realizes the continuous and high-speed stamping of various nanoscale patterns on a large-area flexible substrate without resorting to ponderous and complicated instruments. We first lay out the process principle based on continuous NIL on a UV-curable resin layer using a flexible nanopatterned mold. We then create conceptual and specific designs for the system by focusing on two key processes, imprinting and UV curing, which are performed in a continuous R2R fashion. We build a system with essential components and optimized modules for imprinting, UV curing, and R2R conveying to enable simple but effective nanopatterning within the desktop volume. Finally, we demonstrate several nanopatterning results such as nanolines and nanodots, which are obtained by operating the built desktop R2R NIL system on transparent and flexible substrates. Our system may be further utilized in the scalable fabrication of diverse flexible nanopatterns for many functional applications in optics, photonics, sensors, and energy harvesters.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.120-120
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• 2011

Graphene is a carbon based material and it has great potential of being utilized in various fields such as electronics, optics, and mechanics. In order to develop graphene-based logic systems, graphene field-effect transistor (GFET) has been extensively explored. GFET requires supporting devices, such as volatile memory, to function in an embedded logic system. As far as we understand, graphene has not been studied for volatile memory application, although several graphene non-volatile memories (GNVMs) have been reported. However, we think that these GNVM are unable to serve the logic system properly due to the very slow program/read speed. In this study, a GVM based on the GFET structure and using an engineered graphene channel is proposed. By manipulating the deposition condition, charge traps are introduced to graphene channel, which store charges temporarily, so as to enable volatile data storage for GFET. The proposed GVM shows satisfying performance in fast program/erase (P/E) and read speed. Moreover, this GVM has good compatibility with GFET in device fabrication process. This GVM can be designed to be dynamic random access memory (DRAM) in serving the logic systems application. We demonstrated GVM with the structure of FET. By manipulating the graphene synthesis process, we could engineer the charge trap density of graphene layer. In the range that our measurement system can support, we achieved a high performance of GVM in refresh (>10 ${\mu}s$) and retention time (~100 s). Because of high speed, when compared with other graphene based memory devices, GVM proposed in this study can be a strong contender for future electrical system applications.

• Korean Journal of Optics and Photonics
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• v.3 no.4
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• pp.258-265
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• 1992

A low loss optical waveguide of $P_{2}O_{5}-SiO_{2}$on Si substrate is produced by using the chemical vapour deposition method of $SiO_2$ thin films used in Si technology. Propagation loss of the waveguide layer was 1.65 dB/cm as produced and reduced down to 0.1 dB/cm after heat treatment at $1100^{\circ}C$. By using laser lithography and reactive ion etching method $P_{2}O_{5}-SiO_{2}$ waveguide was produced and subsequently annealed at $1100^{\circ}C$.As a result of this annealing the shape of the waveguide core was changed from rectangular to semi-circular form, and the propagation loss was reduced as down to 0.03 dB/cm at 0.6328$\mu$m and 0.04dB/cm at 1.53$\mu$m. We think that the mechanism of the reduction in propagation loss during the heat treatment is the following: 1) The hydrogen bonding in waveguide layer, which causes absorption loss, is dissociated and diffused out. 2) The roughness of the interface and the micro-structure of the waveguide layer is removed. 3) The irregularities in the cross-sectional shape of the waveguide which was induced during the lithographic process were disappeared by flowing of the waveguide core.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.469-474
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• 2004

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.