• 한국펄프종이공학회:학술대회논문집
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• 한국펄프종이공학회 2008년도 제33회 펄프종이기술 국제세미나
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• pp.47-70
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• 2008

Cost efficiency is today the primary requirement in the paper and board industry. This has led therefore, to a greater preponderance of products with specifically designed functionality to take account of current industry needs. Continually increasing machine coating speeds together with these new coating colour components have put more emphasis on the importance of the correct rheology and water retention of the coating colours to achieve good runnability and end product quality. In the coating process, some penetration of the aqueous phase, to the base paper or board must occur to anchor the pre-coating to the base or the topcoat to the pre-coat. The aqueous phase acts as a vehicle not only for the binder, but also for the other components. If this water or material penetration is not controlled, there will be excessive material shift from the coating colour to the base, before immobilization of the coating colour will stop this migration. This can result in poor machine runnability, unstable system and uneven coating layer, impacting print quality. The performance of rheology modifiers or thickeners on the coating color have tended to be evaluated by the term, "water retention". This simple term is not sufficient to explain their performance changes during coating. In this paper we are introducing a new concept of "material retention", which takes note of the total composition of the coating colour material and therefore goes beyond the concept of only water retention. Controlled material retention leads to a more uniform z-directional distribution of coating colour components. The changes that can be made to z-directional uniformity will have positive effects on print quality as measured by surface strength, ink setting properties, print gloss, mottling tendency. Optical properties, such as light scattering, whiteness and light fastness delivery should also be improved. Additionally, controlled material retention minimizes changes to the coating colour with time in re-circulation giving less fluctuation in quality in the machine direction since it more closely resembles fresh coating for longer periods. Use of the material retention concept enables paper and board producers to have more stable runnability (i.e. lower process costs), improved end product quality (i.e. better performance of used chemicals) and/or optimized use of coating colour components (i.e. lower total formulation cost)

• 한국진공학회지
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• 제22권2호
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• pp.79-85
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• 2013

희토류 이온 $Eu^{3+}$와 $Dy^{3+}$가 각각 도핑된 $CaMoO_4$ 광체 분말을 고상반응법으로 합성하였다. 모든 형광체 분말의 결정 구조는 활성제 이온의 종류와 농도비에 관계없이 주 회절 피크(112)를 갖는 정방 정계이었다. $Eu^{3+}$ 이온이 도핑된 형광체의 경우에, $Eu^{3+}$ 이온의 농도가 0.01~0.10 mol 영역에서 결정 입자의 크기는 전반적으로 증가하였고, 비교적 균일한 크기 분포를 가지면서 조약돌 형태를 나타내었으며, 흡광 스펙트럼은 311 nm를 정점으로 넓게 퍼져있는 전하 전달 밴드와 파장 영역 360~470nm에서 약한 피크를 갖는 다수의 흡수선이 관측되었으며, 주 발광 스펙트럼은 $Eu^{3+}$ 이온의 $^5D_0{\rightarrow}^7F_2$ 전이에 의한 618 nm에 피크를 갖는 강한 적색 발광이었다. $Dy^{3+}$ 이온이 도핑된 분말의 경우에, 흡광 스펙트럼은 303 nm에 피크를 갖는 전하 전달 밴드와 상대적으로 세기가 약한 다수의 $Dy^{3+}$ 이온의 전이 신호가 발생하였으며, 주 발광 스펙트럼은 $^4F_{9/2}{\rightarrow}^7H_{13/2}$ 전이에 의한 578 nm에 피크를 갖는 황색 발광 스펙트럼이 관측되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.240-240
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• 2011

The first neutral beam injector (NBI-1) has been developed for the Korea Superconducting Tokamak Advanced Research (KSTAR) tokamak. A first long pulse ion source (LPIS-1) has been installed on the NBI-1 for an auxiliary heating and current drive of KSTAR core plasmas. Performance of ion and neutral beam extractions in the LPIS-1 was investigated initially on the KSTAR NBI-1 system, prior to the neutral beam injection into the main plasmas. The ion source consists of a JAEA magnetic bucket plasma generator with multi-pole cusp fields and a set of KAERI prototype-III tetrode accelerators with circular apertures. The inner volume of plasma generator and accelerator column in the LPIS-1 is approximately 123 liters. Final design requirements for the ion source were a 120 kV/ 65 A deuterium beam and a 300 s pulse length. The extraction of ion beams was initiated by the formation of arc plasmas in the LPIS-1, called as an arc-beam extraction method. A stable ion beam extraction of LPIS-1 has been achieved up to an 100 kV/42 A for a 4 s pulse length and an 80 kV/25 A for a 14 s pulse length. Optimum beam perveance of 1.21 microperv has been found at an accelerating voltage of 80 kV. Neutralization efficiency has been measured by using a water flow calorimetry (WFC) method of calorimeter and an operation of bending magnet. The full-energy species of ion beams have been detected by using the diagnostic method of optical multichannel analyzer (OMA). An arc efficiency of the LPIS was 0.6~1.1 A/kW depending on the operating conditions of arc discharge.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2005년도 춘계 학술대회
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• pp.129-136
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• 2005

원자력 발전소의 증기발생기 슬러지 중에서는 이온교환수지가 발견되어서는 안 된다. 증기발생기 슬러지 시료 중에서 발견되어 이온교환수지 입자로 의심되는 구형 입자들의 특성을 측정하였다. 미세조작기술을 이용하여 광학현미경으로 입자 크기 분포를, EPMA로 구형입자의 성분을, 그리고 IR 분광 스펙트럼 비교에 의하여 이온교환수지 여부를 조사하였다. 슬러지의 입자 크기는 1내지 200 ${\mu}m$이었으나 구형입자는 40-500 ${\mu}m$이었으며, 슬러지의 주요 불순원소가 Si, Al, Mn, Cr, Ni, Zn, 그리고 Ti이었으나 구형입자는 Si, Cu, Zn 이었다. 주성분은 두 경우 모두 철이었으며, IR 분광스펙트럼을 S/G 시스템에서 사용하는 이온교환수지의 경우와 비교했을 때 서로 다른 결과를 보였다. 이 결과들은 것은 증기발생기 슬러지 시료 중에서 발견된 구형 입자가 이온교환수지는 아니며 일반적인 슬러지가 생성되는 과정에서 작은 슬러지 입자들이 크게 뭉쳐서 생성된 것임을 나타내고 있다.

• 한국식품위생안전성학회지
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• 제32권5호
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• pp.343-347
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• 2017

건강기능식품에서 이산화규소 분석 방법을 확립하기 위하여 산(불산과 붕산)분해를 이용한 ICP-OES 방법을 수행하였다. 이 방법의 검출한계와 정량한계는 각각 0.07 mg/L, 0.20 mg/L 이었다. 검량선은 0.2~20.0 mg/L의 농도범위에서 우수한 직선성($r^2$ 0.99)을 보였다. 글루코사민 제품에 이산화규소 0.4, 1.0, 2.0% (w/w)를 첨가하여 시험한 결과 90.22~94.14%의 회수율과 0.72~1.67%의 정밀성을 나타내었다. 확립된 방법으로 시중에 유통되는 건강기능식품 11품목의 이산화규소 함량을 분석한 결과 0.02~1.80% (w/w)로 나타났다. 이 결과는 건강기능식품에 이산화규소의 사용기준 2% (w/w) 이하를 만족하는 결과로 시험한 제품들은 규격에 적합하였다. 따라서 본 연구에서 확립된 이 방법은 건강기능식품 중 이산화규소를 쉽고, 빠르게 분석할 수 있으며, 건강기능식품 중 이산화규소 함량 분석에 효율적으로 사용될 수 있다.

• 한국표면공학회지
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• 제46권2호
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• pp.68-74
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• 2013

For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

• 인터넷정보학회논문지
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• 제16권1호
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• pp.29-37
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• 2015

이 논문에서는 모바일 기기상에서 카메라기반 악보인식을 위한 오선 두께와 오선 간격을 추정하는 전처리 기술을 제안한다. 캡쳐된 영상은 조명이나, 흐려짐, 저해상도 등의 많은 왜곡으로 인해 인식에 어려움이 있다. 특히 복잡한 배경을 가지고 있는 악보 영상인식의 경우 더욱 그렇다. 악보 기호 인식에서 오선 두께와 오선 간격은 인식에 큰 영향을 끼친다. 이들 정보는 이진화에도 사용되는데, 복잡한 배경을 가지고 있는 경우 일반적인 이진 영상은 오선 두께와 간격을 추정하는데 만족스럽지 못하다. 따라서 우리는 에지영상에서 런-길이 엔코딩 기술을 이용해 오선 두께와 간격 추정하는 강건한 알고리즘을 제안한다. 제안된 방법은 2단계로 구성되어 있다. 첫 번째 단계는 소벨 연산자에 의해 영역별로 에지 영상을 기반으로 오선 두께와 간격을 추정한다. 각 에지 영상의 열은 런-길이 엔코딩 알고리즘에 의해 기술된다. 두 번째 단계는 안정한 경로 알고리즘을 이용한 오선 검출과 오선 위치를 추적하는 적응적 LTH알고리즘을 이용한 오선 제거이다. 실험결과 복잡한 영상의 경우에도 강건함과 높은 인식률을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.440-443
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• 2002

Present1y the X-Ray diagnosis system is a real condition that is changing by digital ways in it's existent analog ways. This digital radiation detector is divided by the direct method and the indirect method. The indirect method of applied voltage has special qualities that the resolution is low than direct method by diffusion effect that happens. The conversion process ( radiation${\rightarrow}$visible ray${\rightarrow}$electrical signal of two times, has shortcomings that the energy conversion efficiency of electrical signal is low. The direct method has shortcomings that need strong electric fie1d to detect electrical signal efficiently. This research achieved to develop digital detector of the Hybrid method that have form that mixes two ways to supplement shortcoming of direct. indirect method. A studied electrical characteristic by Iodine's Mixture ratio change is added to selenium in the detector which has a multi-layer structure (Oxybromide + a-Se). There are 8 kinds of Manufactured compositions to amorphous selenium Iodine each 30ppm, 100ppm, 200 ppm, 300ppm, 400ppm, 500ppm, 600ppm, 700ppm by a doped photoconductor through a vacuum thermal evaporation method. The phosphor layer is consisted of Oxybromide ($BrO_2$) which uses optical adhesives multi-layer structure. The manufactured compositions calculates and compares Net Charge and signal to noise ratio measuring Photocurrent about Darkcurrent and X-ray. When doped Iodine Mixture ratio is 500ppm to the multi-layer structure (Oxybromide + a-Se), applied voltage of $3V/{\mu}m$, leakage current of compositions $2.61nA/cm^2$ and net charge value by 764pC/$cm^2$/mR then the best result appeared.

• 한국재료학회지
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• 제18권6호
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• pp.339-346
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• 2008

Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.