• Title/Summary/Keyword: Optical scattering rate

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Characterization of 3C-SiC grown on Si(100) wafer (Si(100) 기판상에 성장된 3C-SiC의 특성)

  • 나경일;정연식;류지구;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.533-536
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    • 2001
  • Single crystal cubic silicon carbide(3C-SiC) thin film were deposited on Si(100) substrate up to a thickness of 4.3 $\mu\textrm{m}$ by APCVD(atmospheric pressure chemical vapor deposition) method using hexamethyildisilane(HMDS) at 1350$^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like. The growth rate of the 3C-SiC films was 4.3 $\mu\textrm{m}$/hr. The 3C-SiC epitaxical layers on Si(100) were characterized by XRD(X-ray diffraction), raman scattering and RHEED(reflection high-energy electron diffraction), respectively The 3C-SiC distinct phonons of TO(transverse optical) near 796 cm$\^$-1/ and LO(longitudinal optical) near 974${\pm}$1 cm$\^$-1/ were recorded by raman scattering measurement. The deposition films were identified as the single crystal 3C-SiC phase by XRD spectra(2$\theta$=41.5$^{\circ}$). Also, with increase of films thickness, RHEED patterns gradually changed from a spot pattern to a streak pattern

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Crystal Characteristics of 3C-SiC Grown on Si(100) Wafers (Si(100)기판상에 성장된 3C-SiC의 결정 특성)

  • Chung, Yun-Sik;Ryu, Ji-Goo;Seon, Joo-Heon;Chung, Soo-Yong;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05a
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    • pp.30-34
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    • 2002
  • Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyldisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m$/hr. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

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Morphology Development in a Range of Nanometer to Micrometer in Sulfonated Poly(ethylene terephthalate) Ionomer

  • Lee, Chang-Hyung;Inoue, Takashi;Nah, Jae-Woon
    • Bulletin of the Korean Chemical Society
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    • v.23 no.4
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    • pp.580-586
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    • 2002
  • We investigated the effect of ionic component on crystalline morphology development during isothermal annealing in a sodium neutralized sulfonated poly(ethylene terephthalate) ionomer (Ion-PET) by time-resolved small-angle x-ray scattering (TR-SAX S) using synchrotron radiation. At early stage in Ion-PET, SAXS intensity at a low annealing temperature (Ta = 120 $^{\circ}C)$ decreased monotonously with scattering angle for a while. Then SAXS profile showed a peak and the peak position progressively moved to wider angles with isothermal annealing time. Finally, the peak intensity decreased, shifting the peak angle to wider angle. It is revealed that ionic aggregates (multiplets structure) of several nm, calculated by Debye-Bueche plot, are formed at early stage. They seem to accelerate the crystallization rate and make fine crystallites without spherulite formation (supported by optical microscopy observation). From decrease of peak intensity in SAXS,it is suggested that new lamellae are inserted between the preformed lamellae so that the concentration of ionic multiplets in amorphous region decreases to lower the electron density difference between lamellar crystal and amorphous region. In addition, analysis on the annealing at a high temperature (Ta = 210 $^{\circ}C)$ by optical microscopy, light scattering and transmission electron microscopy shows a formation of spherulite, no ionic aggregates, the retarded crystallization rate and a high level of lamellar orientation.

An analysis method of reflectance spectra of strongly correlated electron systems

  • Hwang, Jungseek
    • Progress in Superconductivity and Cryogenics
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    • v.15 no.1
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    • pp.14-18
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    • 2013
  • We introduce a generic method to analyze optical 17reflectance spectra of strongly correlated electron systems including high-temperature superconductors by using an extended Drude model and Allen's approach. We explain the process step by step from reflectance through the optical conductivity and the scattering rate to the bosonic spectral function. Through the process we are able to get important information on the interactions between charge carriers from measured optical conductivity of the strongly correlated electron systems including copper oxide and iron pnitide high temperature superconductors.

Scattering analysis of laser beam drilling in porous ceramic materials (극초단 레이저를 이용한 기공성 세라믹 드릴링시 발생하는 레이저빔 산란해석)

  • Choi, Hae Woon
    • Laser Solutions
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    • v.15 no.4
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    • pp.6-11
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    • 2012
  • Laser beam can be either absorbed or scattered in porous ceramic material and its optical characteristics need to be understood. Electro-magnetic multiphysics software was used to simulate and understand the actual scattering phenomena in porous materials. 785nm femtosecond laser was irradiated on the surface of ceramic material and strong scattering occurred in drilling process. The computer results showed the scattering and absorption phenomena of Aluminum oxide were a mixture of dielectric and metallic material. The computer simulation showed the laser beam was almost extinct at the aspect rate of 5 approximately.

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Dense Spray Patternation using Optical Tomography

  • Cho, Seongho;Park, Gujeong;Yoon, Youngbin
    • International Journal of Aeronautical and Space Sciences
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    • v.14 no.4
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    • pp.398-407
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    • 2013
  • Optical tomography was used to measure the pattern of spray cross-section. The maximum-likelihood estimation (MLE) algorithm was used to reconstruct the spray cross-section from the measured transmission rate of the spray. A swirl-type injector was used to form an optically dense spray, and the test was carried out in a high-pressure chamber, to control the pressure condition of the test site. Before the experiment, the reliability of the MLE-based reconstruction algorithm was verified, by comparing it with a conventional filtered back projection reconstruction (FBP) method. The MLE algorithm showed superior reconstruction of the image. In the spray patternation experiment, the results of the optical tomography and optical line patternator, which uses Mie scattering signal information, were compared. While measuring the cross-section of optically dense spray, the intensity of the scattering signal had attenuated to an uncorrectable level, which led to incorrect spray pattern measurement by the optical line patternator. However, reliable results were obtained by optical tomography, under the same condition. Finally, the pattern of the optically dense spray was measured at various chamber pressures, of up to 3 MPa. As the chamber pressure increased, the hollow cone-shaped swirl spray shrank, and the attenuation coefficient value of the inner region increased.

Numerical Study on the Link Range of the IM/DD Wireless Optical Communication at 830[nm] Optical Wavelength using Galilean Optics (갈릴리안 광학계를 사용한 IM/DD 광무선통신 시스템에서 830[nm] 광파장에 대한 전송거리 제한 해석)

  • Hong, Kwon-Eui;Ko, Sung-Won;Cho, Jung-Whan
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.11
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    • pp.123-129
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    • 2011
  • In terrestrial wireless optical communication links, atmospheric effects including turbulence, absorption and scattering have significant impact on the system performance. Based on the analysis of transmission in atmospheric channel concerning 830[nm] wavelength diode laser beam, performance of free space optical (FSO) link utilizing Galilean optics as a laser beam transmitting and receving optics, PIN photodiode as a detecting device. In this paper we designed optical link equation for received optical power and we analyze the atmospheric effects on the signal to noise ratio (SNR) and bit error rate (BER) of an terrestrial FSO system. We show that the possible communication distance for BER=$10^{-9}$ in proposed adverse atmospheric conditions.

Packet Error Rate comparsion of Different Modulation Formats over Terrestrial Optical Wireless Communication in Turbulent Atmosphere (교란대기 지상 광무선 통신에서 변조방식에 따른 패킷 오류율 비교)

  • Hong, Kwon-Eui
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.39B no.12
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    • pp.856-863
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    • 2014
  • In the terrestrial optical wireless communication(OWC), the performance is affected by atmospheric turbulence and particles in the air. The received signal power loss mainly is caused by turbulence and scattering. To minimize the adverse atmospheric effects, the OWC used optical signal modulation, such as OOK, PPM and DPIM. In this paper, the packet error rate(PER) was analyzed above three modulation methods to ground optical link in atmospheric turbulence, scattering and link distance. The OWC system used three wavelengths which are 850nm, 1310nm and 1550nm. I assumed the atmospheric turbulence intensity is weak, so the refractive index is $Cn2{\approx}10-14m-2/3$ and the visibility is 2km. The numerical results shown that the L-DPIM scheme and the wavelength 1550nm are better than other modulation methods and wavelengths.

Simulation of Two-Dimensional Intervalley Scattering Rate in HEMT Device (HEMT 소자의 2차원 계곡간 산란율 시뮬레이션)

  • 이준하;이흥주
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.5 no.4
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    • pp.336-339
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    • 2004
  • In this paper the two-dimensional scattering rates were calculated in pseudomorphic Al/sub x//Ga/sub 1-x//As/Ga/sub y/In/sub l -y//As/GaAs heterostructure systems. The electronic states of the square quantum well were determined by the numerical self-consistent solution of Poisson's and Schrodinger's equations. The numerically obtained wave functions and energy levels were used to obtain the major two-dimensional scattering rates in this structure. Polar optical- and acoustic-phonon scattering, piezoelectric, ionized impurity and alloy scattering were considered for the first two sub-bands. The results were compared to the three-dimensional scattering rates also calculated in the same region.

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Structures and Electro-optical Properties of Liquid Crystal-Polymer Composite Films (액정-고분자 복합막의 구조와 전기광학특성)

  • 남수용
    • Journal of the Korean Graphic Arts Communication Society
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    • v.13 no.2
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    • pp.19-32
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    • 1995
  • Liquid crystal-polymer composite(LCPC) films are promising new materials for both projection displays and vision products. LCPC films consist of a continuous liquid crystal phase embedded in a three- dimensional network of polymer matrix. The liquid crystal in these LC phases can be electrically switched giving rise to an opaque scattering off-state and a transparent, non- scattering on-state. In this work, a premixture is composed of LC, UV-curable monomer and photonitiator. LCPC films are formed by photopolymerization induced phase separation from this premixture. In conclusion, structure and electro-optical properties of LCPC films strongly depends on the selection of monomer, LC content and curing rate.

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