• Journal of Astronomy and Space Sciences
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• v.24 no.1
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• pp.69-78
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• 2007

The international EARTHSHINE mission is to measure 1% anomaly of the Earth global albedo and total solar irradiance using Amon-Ra instrument around Lagrange point 1. We developed a new ray truing based integrated end-to-end simulation tool that overcomes the shortcomings of the existing end-to-end performance simulation techniques. We then studied the in-orbit radiometric performance of the breadboard Anon-Ra visible channel optical system. The TSI variation and the Earth albedo anomaly, reported elsewhere, were used as the key input variables in the simulation. The output flux at the instrument focal plane confirms that the integrated ray tracing based end-to-end science simulation delivers the correct level of incident power to the Amon-Ra instrument well within the required measurement error budget of better than ${\pm}0.28%$. Using the global angular distribution model (ADM), the incident flux is then used to estimate the Earth global albedo and the TSI variation, confirming the validity of the primary science cases at the L1 halo orbit. These results imply that the integrated end-to-end ray tracing technique, reported here, can serve as an effective and powerful building block of the on-line science analysis tool in support of the international EARTHSHINE mission currently being developed.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.29-35
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• 2012

The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the $SiN_x:H$ film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. Initially PECVD-$SiN_x:H$ film trends were investigated by varying the deposition parameters (temperature, electrode gap, RF power, gas flow rate etc.) to optimize the process parameter conditions. Then by varying gas ratios ($NH_3/SiH_4$), the hydrogenated silicon nitride films were analyzed for its optical, electrical, chemical and surface passivation properties. The $SiN_x:H$ films of refractive indices 1.90~2.20 were obtained. The film deposited with the gas ratio of 3.6 (Refractive index=1.98) showed the best properties in after firing process condition. The single crystalline silicon solar cells fabricated according to optimized gas ratio (R=3.6) condition on large area substrate of size $156{\times}156mm$ (Pseudo square) was found to have the conversion efficiency as high as 17.2%. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.

• Korean Journal of Optics and Photonics
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• v.31 no.5
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• pp.218-222
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• 2020

In this paper, we have experimentally demonstrated a 2-kW-class spectrally-beam-combined laser with high beam quality, using narrow-linewidth ytterbium-doped polarization-maintaining fiber amplifiers. Five fiber amplifiers with different center wavelengths were implemented for the spectrally-beam-combined laser. The center wavelengths of the five amplifiers were 1062, 1063, 1064, 1065, and 1066 nm, respectively. A phase-modulated laser diode was used as a seed source for each amplifier. The seed sources were modulated by filtered pseudorandom-bit-sequence (PRBS) signals 5 GHz in linewidth. The polarization-maintaining large-mode-area fiber with a core size of 30 ㎛ was used as a delivery fiber to mitigate the stimulated Brillouin scattering (SBS) effect. The laser beams from five amplifiers were spectrally combined by a multilayer dielectric diffraction grating. The maximum output power and beam quality M² of the combined laser were measured to be 2.3 kW and 1.74, respectively.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.48 no.3
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• pp.1-12
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• 2011

Large-sized multi-touch screen is usually made using infrared rays. That is because it has technical constraints or cost problems to make the screen with the other ways using such as existing resistive overlays, capacitive overlay, or acoustic wave. Using infrared rays to make multi-touch screen is easy, but is likely to have technical limits to be implemented. To make up for these technical problems, two other methods were suggested through Surface project, which is a next generation user-interface concept of Microsoft. One is Frustrated Total Internal Reflection (FTIR) which uses infrared cameras, the other is Diffuse Illumination (DI). FTIR and DI are easy to be implemented in large screens and are not influenced by the number of touch points. Although FTIR method has an advantage in detecting touch-points, it also has lots of disadvantages such as screen size limit, quality of the materials, the module for infrared LED arrays, and high consuming power. On the other hand, DI method has difficulty in detecting touch-points because of it's structural problems but makes it possible to solve the problem of FTIR. In this thesis, we study the algorithms for effectively correcting the distort phenomenon of optical lens, and image processing algorithms in order to solve the touch detecting problem of the original DI method. Moreover, we suggest calibration algorithms for improving the accuracy of multi-touch, and a new tracking technique for accurate movement and gesture of the touch device. To verify our approaches, we implemented a table-based multi touch screen.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.7
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• pp.87-95
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• 2013

In this paper, 2.5 Gb/s burst-mode clock and data recovery(CDR) is presented. Digital frequency calibration scheme is adopted to eliminate mismatch between the input data rate and the output frequency of the gated voltage controlled oscillator(GVCO) in the clock recovery circuitry. A jitter rejection scheme is also used to reduce jitter caused by input data. The proposed burst-mode CDR is designed using 0.11 ${\mu}m$ CMOS technology. Post-layout simulations show that peak-to-peak jitter of the recovered data is 14 ps with 0.1 UI input referred jitter, and maximum tolerance of consecutive identical digit(CID) is 2976 bits without input data jitter. The active area occupies 0.125 $mm^2$ without loop filter and the total power consumption is 94.5 mW.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.993-994
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• 2008

Electrochromic (EC) devices are capable of reversibly changing their optical properties upon charge injection and extraction induced by the external voltage. The characteristics of the EC device, such as low power consumption, high coloration efficiency, and memory effects under open circuit status, make them suitable for use in a variety of applications including smart windows and electronic papers. Coloration due to reduction or oxidation of redox chromophores can be used for EC devices (e-paper), but the switching time is slow (second level). Recently, with increasing demand for the low cost, lightweight flat panel display with paper-like readability (electronic paper), an EC display technology based on dye-modified $TiO_2$ nanoparticle electrode was developed. A well known organic dye molecule, viologen, was adsorbed on the surface of a mesoporous $TiO_2$ nanoparticle film to form the EC electrode. On the other hand, ZnO is a wide bandgap II-VI semiconductor which has been applied in many fields such as UV lasers, field effect transistors and transparent conductors. The bandgap of the bulk ZnO is about 3.37 eV, which is close to that of the $TiO_2$ (3.4 eV). As a traditional transparent conductor, ZnO has excellent electron transport properties, even in ZnO nanoparticle films. In the past few years, one-dimension (1D) nanostructures of ZnO have attracted extensive research interest. In particular, 1D ZnO nanowires renders much better electron transportation capability by providing a direct conduction path for electron transport and greatly reducing the number of grain boundaries. These unique advantages make ZnO nanowires a promising matrix electrode for EC dye molecule loading. ZnO nanowires grow vertically from the substrate and form a dense array (Fig. 1). The ZnO nanowires show regular hexagonal cross section and the average diameter of the ZnO nanowires is about 100 nm. The cross-section image of the ZnO nanowires array (Fig. 1) indicates that the length of the ZnO nanowires is about $6\;{\mu}m$. From one on/off cycle of the ZnO EC cell (Fig. 2). We can see that, the switching time of a ZnO nanowire electrode EC cell with an active area of $1\;{\times}\;1\;cm^2$ is 170 ms and 142 ms for coloration and bleaching, respectively. The coloration and bleaching time is faster compared to the $TiO_2$ mesoporous EC devices with both coloration and bleaching time of about 250 ms for a device with an active area of $2.5\;cm^2$. With further optimization, it is possible that the response time can reach ten(s) of millisecond, i.e. capable of displaying video. Fig. 3 shows a prototype with two different transmittance states. It can be seen that good contrast was obtained. The retention was at least a few hours for these prototypes. Being an oxide, ZnO is oxidation resistant, i.e. it is more durable for field emission cathode. ZnO nanotetropods were also applied to realize the first prototype triode field emission device, making use of scattered surface-conduction electrons for field emission (Fig. 4). The device has a high efficiency (field emitted electron to total electron ratio) of about 60%. With this high efficiency, we were able to fabricate some prototype displays (Fig. 5 showing some alphanumerical symbols). ZnO tetrapods have four legs, which guarantees that there is one leg always pointing upward, even using screen printing method to fabricate the cathode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• Journal of Life Science
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• v.19 no.3
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• pp.349-355
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• 2009

Metabolic fingerprinting of microbial communities was investigated with Biolog GN2 plates using samples of biofilm and aeration tanks from an RABC (rotating activated Bacillus contactor) system - an advanced wastewater treatment system for the food wastewater of pig slaughterhouses. Aerobic and anaerobic results revealed the following four aspects. First, simple matching and pairs t-test of daily variation showed more defined qualitative and quantitative relatedness of active microbial communities than that of mere optical densities. Second, metabolic potentials were higher in biofilm than in aeration tanks (p<0.01), meaning higher activity of biofilm. Third, two aeration tanks showed the highest similarity (78%) and similar metabolic power (p=0.287). However, actively used carbon sources were different among samples, signifying change of active communities at each wastewater treatment step. Finally, aerobic and anaerobic metabolic fingerprinting patterns were different for the same samples representing activities of microaerophilic and/or anaerobic communities. These results suggest that daily variation and anaerobic incubation would help in the comparison of metabolic fingerprintings.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.28-34
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• 1999

We fabricated a planar ultra-violet photodetector whose ohmic and schottky contacts were respectively formed with evaporated Al and Pt on the GaN layer. To examine the applicability of the device to the UV sensor, we investigated its electrical and optical characteristics. The GaN layer on the sapphire waver had $7.8{\times}10^{16}cm^{-3}$ of doping concentnation and the $138 cm^2/V{\cdot}s$ of electron mobility and it absorbed the spectrum of the light below 325 nm wavelength. It had the responsivity of 2.8 A/W of at 325 nm, and the signal to noise ratio(SNR) of $4{\times}10^4$, and the noise equivalent power(NEP) of $3.5{\times}10^9$W under 5 V reverse bias. These results confirmed that the GaN schottky diode had a solar blind properly when it was applied to the UV photodetector.

• Journal of Energy Engineering
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• v.7 no.1
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• pp.146-156
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• 1998

Fly ash produced in coal combustion is a fine-grained material consisting mostly of spherical, glassy, and porous particles. A physical, morphological, and chemical characteristic of fly ash has been analyzed. This study may contribute to the data base of domestic fly ash, the improvement of combustion efficiency, ash recycling and ash collection in the electrostatic precipitator. The physical property of fly ash is determined using a particle counter for the measurement of ash size distribution and gravimeter. Morphological characteristic of fly ash is performed using a scanning electron micrograph and an optical microscope. The chemical components of fly ash are determined using an inductively coupled plasma emission spectrometry (ICP). The distribution of fly ash size was ranged from 15 to 25 $\mu$m in mass median diameter. Exposure conditions of flue gas temperature and duration within the combustion zone of the boiler played an important role on the morphological properties of the fly ash such as shape, relative opacity, coloration, cenosphere and plerosphere. The spherical fly ash might be generated at the condition of complete combustion. The size of fly ash was found to be increased the with particle-particle interaction of agglomeration and coagulation. Fly ash consisted of $SiO_2\;Al_2O_3\;and\;Fe_2O_3$ with 85% and carbon with 3~10% of total mass.