• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.38 no.2
• /
• pp.1-5
• /
• 2001

We propose an optical performance monitoring method for WDM optical transmission systems. By assigning a pair of AWG ports to each optical signal channel. the optical power, optical signal-to-noise ratio (OSNIO, and wavelength of all the signal channels are observed simultaneously. The output power ratio of the AWG port pair depended on the wavelength variation of the channel with sensitivity of 1dB/0.026nm. The OSNH results were deviated no more than 0.7dB from the results measured by optical signal analyzer (OSA).

• Journal of the Optical Society of Korea
• /
• v.17 no.1
• /
• pp.44-49
• /
• 2013

A transimpedance amplifier (TIA)-optical receiver (Rx) using two intersecting active feedback system with regulated-cascode (RGC) input stage has been designed and implemented for optical interconnects. The optical TIA-Rx chip is designed in a 0.13 ${\mu}m$ CMOS technology and works up to 10 Gbps data rate. The TIA-Rx chip core occupies an area of 0.051 $mm^2$ with power consumption of 16.9 mW at 1.3 V. The measured input-referred noise of optical TIA-Rx is 20 pA/${\surd}$Hz with a 3-dB bandwidth of 6.9 GHz. The proposed TIA-Rx achieved a high gain-bandwidth product per DC power figure of merit of 408 $GHz{\Omega}/mW$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.131-131
• /
• 2010

The power of semiconductor laser diodes has been limited primarily by the heating effects which occur at high optical intensities. The actual limiting event can take one of a number of forms such as. catastrophic optical damage or filamentation. A general approach to this problem is to design a heterostructure which creates a high powered output while maintaining low internal optical intensities. A graded index separate confinement heterostructure (GRIN-SCH) is one such structure that accomplishes the above task. Here, the active region is sandwiched between graded index layers where the index of refraction increases nearer to the active layer. This structure has been shown to yield a high efficiency due to the confinement of both the optical power and carriers, thereby reducing the optical intensity required to achieve higher powers. The optical confinement also reinforces the optical beam quality against high power effects. Quantum dots have long been a desirable option for laser diodes due to the enhanced optical properties associated with the zeroth dimensionality. In our work, we use PICS3D software created by Crosslight Software Inc. to simulate the performance of In0.67A10.33As/A10.2Ga0.8AsquantumdotsusedwithaGRIN-SCH. The simulation tools are used to optimize the GRIN-SCH structure for high efficiency and optical beam quality.

• 한국초전도학회:학술대회논문집
• /
• v.9
• /
• pp.271-274
• /
• 1999

We are investigating epitaxially grown YBa$_2Cu_3O_x$(123) on MgO single crystal by partial melting process for high power application. After fabricating of BaCuO$_2$(011), Y$_2BaCuO_5$(211) powder, we made YBa$_2Cu_3O_x$(123) Paste with just mixing of (211), (011) and CuO(001) powders. Screen printing method was used to coat YBa$_2Cu_3O_x$(123) paste on MgO single crystal. To reduce the reaction in low temperature, rapid heating was conducted at partial melting temperature. The film was analysed with the difference of cooling-rate, thickness, reaction temperature by XRD, SEM, in-plane alignment, out-of-plane alignment, temperature-resistivity characteristics.

• Korean Journal of Metals and Materials
• /
• v.47 no.1
• /
• pp.38-43
• /
• 2009

To investigate the effect of RF power on the structural, optical and electrical properties of amorphous InGaZnO (a-IGZO), its thin films and TFTs were prepared by RF magnetron sputtering method with different RF power conditions of 40, 80 and 120 W at room temperature. In this study, as RF power during the deposition process increases, the RMS roughness of a-IGZO films increased from 0.26 nm to 1.09 nm, while the optical band-gap decreased from 3.28 eV to 3.04 eV. In the case of the electrical characteristics of a-IGZO TFTs, the saturation mobility increased from $7.3cm^2/Vs$ to $17.0cm^2/Vs$, but the threshold voltage decreased from 5.9 V to 3.9 V with increasing RF power. It is regarded that the increment of RF power increases the carrier concentration of the a-IGZO semiconductor layer due to the higher generation of oxygen vacancies.

• Proceedings of the IEEK Conference
• /
• 2002.06a
• /
• pp.203-206
• /
• 2002

We implemented 2.5Gbps optical transponder by using uncooled laser diode and measured temperature effects of 2.5Gbps uncooled laser diode, such as optial power vs. injection current, extinction ratio, and power penaty.

• Proceedings of the KIEE Conference
• /
• 2006.07d
• /
• pp.1901-1902
• /
• 2006

In recent years, it has been a worldwide trend that many power utilities gave their attention to develop and operate their power plants, substation and distribution systems. Following this trend, KEPCO(Korea Electric Power Corporation) has developed many electric automation systems with various communication networks. It has been natural that the automation systems are just focused on to remote devices when they come to be designed. But, we have to shift the focus to the automation system itself. We have developed the Multi-service Optical Transmission System (M-OTS) for electrical power systems. It can be adopt to not only distribution power field but also the transmission power field. The result strongly shows that the system is potentially beneficial in reliability, speed, and expandability. This paper presents some of initial design efforts and results toward a KEPCO's communication system in distribution areas.

• Transactions of Materials Processing
• /
• v.11 no.2
• /
• pp.103-107
• /
• 2002

With the great demand for WDM (Wavelength Division Multiplexing) optical communications, optical switches are expected to become one of the dominant components in future networks. Conventional mechanical switches suffer from poor reliability and large size; however, many micromachined optical switches with moving mirrors have been proposed for high scale OXC (Optical Crossconnect) or ADM (Add/Drop Multiplex) because of the low power consumption and high reliability of these switches. In this paper, we introduce the technological trends of optical switches using MEMS, related micromachining technologies and their characteristics.

• Proceedings of the Optical Society of Korea Conference
• /
• 2005.02a
• /
• pp.10-11
• /
• 2005

• Proceedings of the Optical Society of Korea Conference
• /
• 1989.02a
• /
• pp.5-6
• /
• 1989

The overall design of the optical isolator system is prepared for the 1 TW Nd pulse laser. Two pockels cell optical switches are employed to suppress the amplified spontaneous emission and the backward reflection. The role of two Farady rotators is to protect the laser system from the light amplified after back reflection. One saturable absorber dye and one liquid crystal polarizer/isolator will also serve as optical isolator.