• Title/Summary/Keyword: Optical memory

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Atomic layer deposition of In-Sb-Te Thin Films for PRAM Application

  • Lee, Eui-Bok;Ju, Byeong-Kwon;Kim, Yong-Tae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.132-132
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    • 2011
  • For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

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Phase Change Characteristics of Aux(Ge2Sb2Te5)1-x (x=0, 0.0110, 0.0323, 0.0625) Thin Film for PRAM (PRAM을 위한 Aux(Ge2Sb2Te5)1-x (x=0, 0.0110, 0.0323, 0.0625) 박막의 상변환 특성)

  • Shin, Jae-Ho;Baek, Seung-Cheol;Kim, Byung-Cheul;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.5
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    • pp.404-409
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    • 2011
  • An amorphous $Ge_2Sb_2Te_5$ thin film is one of the most commonly used materials for phase-change data storage. In this study, $Au_x(Ge_2Sb_2Te_5)_{1-x}$ thin film amorphous-to-crystalline phase-change rate were evaluated in using 658 nm laser beam. The focused laser beam with a diameter <10 ${\mu}m$ was illuminated in the power (P) and pulse duration (t) ranges of 1-17 mW and 10-460 ns, respectively, with subsequent detection of the responsive signals reflected from the film surface. We also evaluated the material characteristics, such as optical absorption and energy gap, crystalline phases, and sheet resistance of as-deposited and annealed films. The result of experiments showed that the thermal stability of the $Ge_2Sb_2Te_5$ film is largely improved by adding Au.

Characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x= 0, 0.05, 0.1) thin films for PRAM (PRAM을 위한 $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x= 0, 0.05, 0.1) 박막의 특성)

  • Kim, Sung-Won;Song, Ki-Ho;Lee, Hyun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.21-22
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    • 2008
  • In the paper, we report several experimental data capable of evaluating the phase transformation characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x =0, 0.05, 0.1) thin films. The $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ phase change thin films have been prepared by thermal evaporation. The crystallization characteristics of amorphous$Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power; 1~17 mW, pulse duration; 10~460 ns) and XRD measurement. It was found that the more Ag is doped, the more crystallization speed was 50 improved. In comparision with $Ge_2Sb_2Te_5$ thin film, the sheet resistance$(R_{amor})$ of the amorphous $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were found to be lager than that of $Ge_2Sb_2Te_5$ film($R_{amor}$ $\sim10^7\Omega/\square$ and $R_{cryst}$ 10 $\Omega/\square$). That is, the ratio of $R_{amor}/R_{cryst}$ was evaluates to be $\sim10^6$ This is very helpful to writing current reduction of phase-change random acess memory.

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Phase Unwrapping using Modified Goldstein Algorithm in Digital Holography (디지털 홀로그래피에서의 수정된 골드스타인 알고리즘을 이용한 위상펼침)

  • Yoon, Seon-Kyu;Cho, Hyung-Jun;Kim, Doo-Cheol;Yu, Young-Hun;Kim, Sung-Kyu
    • Korean Journal of Optics and Photonics
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    • v.18 no.2
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    • pp.122-129
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    • 2007
  • Generally, many kinds of phase unwrapping algorithm are used to obtain three-dimensional features in digital holography. The Goldstein algorithm is ra epresentative method. which requires small memory capacity and short execution time fer an unwrapping process. However, the Goldstein algorithm has some problems when the dipole residue is located at the boundary. When the opposite residues are located at the boundary and the distance between the opposite residues is longer than the boundary, an incorrect branch cut occurs and results in incorrect calculation. We have modified the Goldstein algorithm to solve the incorrect calculation problem using boundary information. We found that the modified Goldstein algorithm could resolve the Goldstein algorithm's problem.

3차 저장 장치의 장착을 위한 MIDAS-II의 확장

  • Kim, Yeong-Seong;Gang, Hyeon-Cheol;Kim, Jun
    • Journal of KIISE:Computing Practices and Letters
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    • v.6 no.1
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    • pp.21-35
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    • 2000
  • MIDAS-II is the storage system for BADA DBMS developed at ETRI. This paper describes the extension of MIDAS-II for incorporating the tertiary storage device such as an optical disk jukebox or a tape library, enabling MIDAS-II to function as a storage system of the data server that stores a massive amount of multimedia data. The MIDAS-II disk volume structure is extended to efficiently function as a volume for the tertiary storage device with multiple platters, which canstore huge amount of data of the order of tera bytes. The storage structure of the LOB is changed to efficiently manage the LOB data in the tertiary storage device. The data structures of the shared memory, the process structure, and the utilities in MIDAS-II are also extended to efficiently incorporating the tertiary storage device. The functionalities of each MIDAS-II API function are expanded to handle the tertiary storage device, while the prototypes of those functions are intact in order not to affect the existing application programs. The performance evaluation shows that the extended MIDAS-II works effectively with the tertiary storage device. All these extensions and the performance evaluation are conducted in the SunOS 5.4 environment.

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Holographic disk memories based on localized hologram recording (국소 홀로그램 기록방식에 기초한 홀로그래픽 디스크 메모리)

  • 오용석;김복수;장주석;강영수
    • Korean Journal of Optics and Photonics
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    • v.14 no.6
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    • pp.663-668
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    • 2003
  • We studied a localized hologram recording method that can be used in a disk-shaped medium. In this method, the reference beam is focused by use of a cylindrical lens to get a thin spot in the medium, and then a hologram is recorded in that spot by illuminating the signal beam. Many localized holograms are multiplexed by shifting the medium by a distance more than the thin spot size of the reference beam. This method does not need recording-time scheduling for uniform diffraction efficiencies. We show that a minimal required thickness of the recording medium exists for a given spot size of the signal beam. We performed experiments for data storage and retrieval, and obtained a storage density of 20 bits/${\mu}{\textrm}{m}$$^2$ and a raw-bit error rate (RBER) of 2.5${\times}$10$^{-3}$ , when a 2 mm-thick Fe-doped LiNbO$_3$ crystal was used.

A Survey of Genetic Programming and Its Applications

  • Ahvanooey, Milad Taleby;Li, Qianmu;Wu, Ming;Wang, Shuo
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.13 no.4
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    • pp.1765-1794
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    • 2019
  • Genetic Programming (GP) is an intelligence technique whereby computer programs are encoded as a set of genes which are evolved utilizing a Genetic Algorithm (GA). In other words, the GP employs novel optimization techniques to modify computer programs; imitating the way humans develop programs by progressively re-writing them for solving problems automatically. Trial programs are frequently altered in the search for obtaining superior solutions due to the base is GA. These are evolutionary search techniques inspired by biological evolution such as mutation, reproduction, natural selection, recombination, and survival of the fittest. The power of GAs is being represented by an advancing range of applications; vector processing, quantum computing, VLSI circuit layout, and so on. But one of the most significant uses of GAs is the automatic generation of programs. Technically, the GP solves problems automatically without having to tell the computer specifically how to process it. To meet this requirement, the GP utilizes GAs to a "population" of trial programs, traditionally encoded in memory as tree-structures. Trial programs are estimated using a "fitness function" and the suited solutions picked for re-evaluation and modification such that this sequence is replicated until a "correct" program is generated. GP has represented its power by modifying a simple program for categorizing news stories, executing optical character recognition, medical signal filters, and for target identification, etc. This paper reviews existing literature regarding the GPs and their applications in different scientific fields and aims to provide an easy understanding of various types of GPs for beginners.

A Transmission Electron Microscopy Study on the Crystallization Behavior of In-Sb-Te Thin Films (In-Sb-Te 박막의 결정화 거동에 관한 투과전자현미경 연구)

  • Kim, Chung-Soo;Kim, Eun-Tae;Lee, Jeong-Yong;Kim, Yong-Tae
    • Applied Microscopy
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    • v.38 no.4
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    • pp.279-284
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    • 2008
  • The phase change materials have been extensively used as an optical rewritable data storage media utilizing their phase change properties. Recently, the phase change materials have been spotlighted for the application of non-volatile memory device, such as the phase change random access memory. In this work, we have investigated the crystallization behavior and microstructure analysis of In-Sb-Te (IST) thin films deposited by RF magnetron sputtering. Transmission electron microscopy measurement was carried out after the annealing at $300^{\circ}C$, $350^{\circ}C$, $400^{\circ}C$ and $450^{\circ}C$ for 5 min. It was observed that InSb phases change into $In_3SbTe_2$ phases and InTe phases as the temperature increases. It was found that the thickness of thin films was decreased and the grain size was increased by the bright field transmission electron microscopy (BF TEM) images and the selected area electron diffraction (SAED) patterns. In a high resolution transmission electron microscopy (HRTEM) study, it shows that $350^{\circ}C$-annealed InSb phases have {111} facet because the surface energy of a {111} close-packed plane is the lowest in FCC crystals. When the film was heated up to $400^{\circ}C$, $In_3SbTe_2$ grains have coherent micro-twins with {111} mirror plane, and they are healed annealing at $450^{\circ}C$. From the HRTEM, InTe phase separation was occurred in this stage. It can be found that $In_3SbTe_2$ forms in the crystallization process as composition of the film near stoichiometric composition, while InTe phase separation may take place as the composition deviates from $In_3SbTe_2$.

Automatic gasometer reading system using selective optical character recognition (관심 문자열 인식 기술을 이용한 가스계량기 자동 검침 시스템)

  • Lee, Kyohyuk;Kim, Taeyeon;Kim, Wooju
    • Journal of Intelligence and Information Systems
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    • v.26 no.2
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    • pp.1-25
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    • 2020
  • In this paper, we suggest an application system architecture which provides accurate, fast and efficient automatic gasometer reading function. The system captures gasometer image using mobile device camera, transmits the image to a cloud server on top of private LTE network, and analyzes the image to extract character information of device ID and gas usage amount by selective optical character recognition based on deep learning technology. In general, there are many types of character in an image and optical character recognition technology extracts all character information in an image. But some applications need to ignore non-of-interest types of character and only have to focus on some specific types of characters. For an example of the application, automatic gasometer reading system only need to extract device ID and gas usage amount character information from gasometer images to send bill to users. Non-of-interest character strings, such as device type, manufacturer, manufacturing date, specification and etc., are not valuable information to the application. Thus, the application have to analyze point of interest region and specific types of characters to extract valuable information only. We adopted CNN (Convolutional Neural Network) based object detection and CRNN (Convolutional Recurrent Neural Network) technology for selective optical character recognition which only analyze point of interest region for selective character information extraction. We build up 3 neural networks for the application system. The first is a convolutional neural network which detects point of interest region of gas usage amount and device ID information character strings, the second is another convolutional neural network which transforms spatial information of point of interest region to spatial sequential feature vectors, and the third is bi-directional long short term memory network which converts spatial sequential information to character strings using time-series analysis mapping from feature vectors to character strings. In this research, point of interest character strings are device ID and gas usage amount. Device ID consists of 12 arabic character strings and gas usage amount consists of 4 ~ 5 arabic character strings. All system components are implemented in Amazon Web Service Cloud with Intel Zeon E5-2686 v4 CPU and NVidia TESLA V100 GPU. The system architecture adopts master-lave processing structure for efficient and fast parallel processing coping with about 700,000 requests per day. Mobile device captures gasometer image and transmits to master process in AWS cloud. Master process runs on Intel Zeon CPU and pushes reading request from mobile device to an input queue with FIFO (First In First Out) structure. Slave process consists of 3 types of deep neural networks which conduct character recognition process and runs on NVidia GPU module. Slave process is always polling the input queue to get recognition request. If there are some requests from master process in the input queue, slave process converts the image in the input queue to device ID character string, gas usage amount character string and position information of the strings, returns the information to output queue, and switch to idle mode to poll the input queue. Master process gets final information form the output queue and delivers the information to the mobile device. We used total 27,120 gasometer images for training, validation and testing of 3 types of deep neural network. 22,985 images were used for training and validation, 4,135 images were used for testing. We randomly splitted 22,985 images with 8:2 ratio for training and validation respectively for each training epoch. 4,135 test image were categorized into 5 types (Normal, noise, reflex, scale and slant). Normal data is clean image data, noise means image with noise signal, relfex means image with light reflection in gasometer region, scale means images with small object size due to long-distance capturing and slant means images which is not horizontally flat. Final character string recognition accuracies for device ID and gas usage amount of normal data are 0.960 and 0.864 respectively.

Application of KOMPSAT-5 SAR Interferometry by using SNAP Software (SNAP 소프트웨어를 이용한 KOMPSAT-5 SAR 간섭기법 구현)

  • Lee, Hoonyol
    • Korean Journal of Remote Sensing
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    • v.33 no.6_3
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    • pp.1215-1221
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    • 2017
  • SeNtinel's Application Platform (SNAP) is an open source software developed by the European Space Agency and consists of several toolboxes that process data from Sentinel satellite series, including SAR (Synthetic Aperture Radar) and optical satellites. Among them, S1TBX (Sentinel-1 ToolBoX)is mainly used to process Sentinel-1A/BSAR images and interferometric techniques. It provides flowchart processing method such as Graph Builder, and has convenient functions including automatic downloading of DEM (Digital Elevation Model) and image mosaicking. Therefore, if computer memory is sufficient, InSAR (Interferometric SAR) and DInSAR (Differential InSAR) perform smoothly and are widely used recently in the world through rapid upgrades. S1TBX also includes existing SAR data processing functions, and since version 5, the processing capability of KOMPSAT-5 has been added. This paper shows an example of processing the interference technique of KOMPSAT-5 SAR image using S1TBX of SNAP. In the open mine of Tavan Tolgoi in Mongolia, the difference between DEM obtained in KOMPSAT-5 in 2015 and SRTM 1sec DEM obtained in 2000 was analyzed. It was found that the maximum depth of 130 meters was excavated and the height of the accumulated ore is over 70 meters during 15 years. Tidal and topographic InSAR signals were observed in the glacier area near Jangbogo Antarctic Research Station, but SNAP was not able to treat it due to orbit error and DEM error. In addition, several DInSAR images were made in the Iraqi desert region, but many lines appearing in systematic errors were found on coherence images. Stacking for StaMPS application was not possible due to orbit error or program bug. It is expected that SNAP can resolve the problem owing to a surge in users and a very fast upgrade of the software.