Browse > Article
http://dx.doi.org/10.4313/JKEM.2011.24.5.404

Phase Change Characteristics of Aux(Ge2Sb2Te5)1-x (x=0, 0.0110, 0.0323, 0.0625) Thin Film for PRAM  

Shin, Jae-Ho (Department of Advanced Chemicals & Engineering, Chonnam National University)
Baek, Seung-Cheol (Department of Advanced Chemicals & Engineering, Chonnam National University)
Kim, Byung-Cheul (Department of Electronic Engineering, Gyeongnam National University of Science and Technology)
Lee, Hyun-Yong (School of Applied Chemical Engineering, Chonnam National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.5, 2011 , pp. 404-409 More about this Journal
Abstract
An amorphous $Ge_2Sb_2Te_5$ thin film is one of the most commonly used materials for phase-change data storage. In this study, $Au_x(Ge_2Sb_2Te_5)_{1-x}$ thin film amorphous-to-crystalline phase-change rate were evaluated in using 658 nm laser beam. The focused laser beam with a diameter <10 ${\mu}m$ was illuminated in the power (P) and pulse duration (t) ranges of 1-17 mW and 10-460 ns, respectively, with subsequent detection of the responsive signals reflected from the film surface. We also evaluated the material characteristics, such as optical absorption and energy gap, crystalline phases, and sheet resistance of as-deposited and annealed films. The result of experiments showed that the thermal stability of the $Ge_2Sb_2Te_5$ film is largely improved by adding Au.
Keywords
GeSbTe; Phase change memory; Crystallization; Au; PRAM;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 U. C. Sin, S. M. Jo, S. U. Lyu, and B. G. Yu, J . KIEEME, 16, 10 (2003).
2 D. Salamon and B. F. Cockburn, International Workshop on Memory Technology (Design and Testing MT DT, 2003) p.86,
3 A. Pirovano, A. L. Lacaita, A Benvenuti, F. Pellizzer, and R. Bez, IEEE Trans. on Electronic Devices, 51, 452 (2004).   DOI
4 C. Sun, J. Lee, M. Youm, and Y. Kim, Jpn. J . Appl. Phys., 45, 9157 (2006).   DOI
5 K. H. Song, J. H. Seo, J. H. Kim, and H. Y. Lee, J . Appl. Phys., 106 (2009).
6 S. W. Kim, K. H. Song, and H. Y. Lee, J . KIEEME, 21, 629 (2008).