• Title/Summary/Keyword: Optical materials

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Snapshot of carrier dynamics from amorphous phase to crystal phase in Sb2Te3 thin film

  • Choi, Hyejin;Jung, Seonghoon;Ahn, Min;Yang, Won Jun;Han, Jeong Hwa;Jung, Hoon;Jeong, Kwangho;Park, Jaehun;Cho, Mann-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.139.2-139.2
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    • 2016
  • Electrons and phonons in chalcogenide-based materials play are important factors in the performance of an optical data storage media and thermoelectric devices. However, the fundamental kinetics of carriers in chalcogenide materials remains controversial, and active debate continues over the mechanism responsible for carrier relaxation. In this study, we investigated ultrafast carrier dynamics in an multilayered $\{Sb(3{\AA})/Te(9{\AA})\}n$ thin film during the transition from the amorphous to the crystalline phase using optical pump terahertz probe spectroscopy (OPTP), which permits the relationship between structural phase transition and optical property transitions to be examined. Using THz-TDS, we demonstrated that optical conductance and carrier concentration change as a function of annealing temperature with a contact-free optical technique. Moreover, we observed that the topological surface state (TSS) affects the degree of enhancement of carrier lifetime, which is closely related to the degree of spin-orbit coupling (SOC). The combination of an optical technique and a proposed carrier relaxation mechanism provides a powerful tool for monitoring TSS and SOC. Consequently, the response of the amorphous phase is dominated by an electron-phonon coupling effect, while that of the crystalline structure is controlled by a Dirac surface state and SOC effects. These results are important for understanding the fundamental physics of phase change materials and for optimizing and designing materials with better performance in optoelectronic devices.

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A Study on Design Features of 'Nendo' Furniture ('넨도' 가구의 디자인 특성에 관한 연구)

  • Kim, Ki-Bum
    • Korean Institute of Interior Design Journal
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    • v.24 no.3
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    • pp.68-78
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    • 2015
  • Nendo, which was established in Tokyo in 2002, is a design company established by Oki Sato, which is gaining reputation as a new design group representing Japan through numerous design tasks encompassing diverse design sectors, such as architecture, interior, furniture, graphic, and products. This study was conducted to investigate the formative features of Nendo furniture by reviewing 133 pieces of Nendo furniture designed for the last ten years and identify the general characteristics of Nendo furniture by reviewing the time of launch, product launch type, and furniture type. As a result, the design features of Nendo furniture are as follows: First, the shapes of basic materials including boards, lumber, and bars are maintained intact and Nendo furniture has simple and moderate design without complicated or decorative elements. Second, Nendo furniture has simply embodied a design characterized by simple transformation, minimization of furniture elements, and rearrangement. Third, Nendo presents new and simple furniture differentiated from other pieces of furniture using optical illusions. Such expressions of optical illusions which are hardly found in preexisting furniture are a major feature of Nendo furniture. Fourth, a majority of chairs of Nendo cause optical illusions with the minimized size. In addition, their top boards made of transparent glass and mirror cause optical illusions with the properties of materials. In short, design of Nendo furniture is characterized by formative expressions, expressions of optical illusions, and differentiated use of materials. Fifth, Nendo keeps launching new furniture items in various exhibitions. As a result, Nendo makes furniture with its own unique characteristics based on its diverse studies and experiments which are applied to furniture design in a realistic way. In summary, design of Nendo furniture is characterized by simply embodied design based on small differences in daily life, minimalism with simple and moderate shapes, and its own witty uniqueness based on formative expressions, expressions of optical illusions, and use of materials differentiated from other furniture brands.

Thermal and Optical Properties of Heat-Resistant Core Materials in Plastic Optical Fiber (내열성 플라스틱 광섬유 코어재료의 열적 및 광학적 성질)

  • Lee Gyu-Ho;Cho Won-Keun;Park Min;Lee Hyun-Jung
    • Polymer(Korea)
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    • v.30 no.2
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    • pp.158-161
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    • 2006
  • Recently the application of plastic optical fiber (POF) in automotives and planes demands the heat-resistant and high refractive index con materials. We synthesized polyglutarimides (PGIs) via imidization of PMMA with primary amines under high pressure and high temperature and investigated thermal and optical properties by varying the molar ratio of amines and the type of amines (ethyl amine vs. isopropyl mine). The degree of imidization was calculated based on the peak intensity in $^1H$ NMR and FTIR. We found that the glass transition temperature $(T_g)$ of PGIs increased over $30^{\circ}C$ compared to the traditional core materials in POF, PMMA, and they are stable up to $300\sim400^{\circ}C$. PGIs anthesized with ethyl mine show the better heat resistance than those with isopropyl amines. Additionally, they show the comparable transparency and higher refractive index than PMMA. It implies that they can be utilized as the excellent photo-efficient and heat-resistant core materials in POF.

Effects of Doping with Al, Ga, and In on Structural and Optical Properties of ZnO Nanorods Grown by Hydrothermal Method

  • Kim, Soaram;Nam, Giwoong;Park, Hyunggil;Yoon, Hyunsik;Lee, Sang-Heon;Kim, Jong Su;Kim, Jin Soo;Kim, Do Yeob;Kim, Sung-O;Leem, Jae-Young
    • Bulletin of the Korean Chemical Society
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    • v.34 no.4
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    • pp.1205-1211
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    • 2013
  • The structural and optical properties of the ZnO, Al-doped ZnO, Ga-doped ZnO, and In-doped ZnO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction, photoluminescence (PL) and ultraviolet-visible spectroscopy. All the nanorods grew with good alignment on the ZnO seed layers and the ZnO nanorod dimensions could be controlled by the addition of the various dopants. For instance, the diameter of the nanorods decreased with increasing atomic number of the dopants. The ratio between the near-band-edge emission (NBE) and the deep-level emission (DLE) intensities ($I_{NBE}/I_{DLE}$) obtained by PL gradually decreased because the DLE intensity from the nanorods gradually increased with increase in the atomic number of the dopants. We found that the dopants affected the structural and optical properties of the ZnO nanorods including their dimensions, lattice constants, residual stresses, bond lengths, PL properties, transmittance values, optical band gaps, and Urbach energies.

Optics in China: past, present and future

  • Gan, Fuxi
    • Proceedings of the Optical Society of Korea Conference
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    • 2000.02a
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    • pp.68-68
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    • 2000
  • In this paper a very brief review of historical development of optical science and technology in China is presented. More attention has been pain on Modem Optics, which developed since 1950s. The recent development of optical science and technology in following fields are introduced. 1. Optical engineering and instrumentation (tracking theodolites, high speed cameras, satellite laser ranging systems, satellite flying attitude control, cameras for remote sensing, astronomical optical instrument) 2. Applied optics (adaptive optics, optical metrology, infrared optics, optical processing, optical holography) 3. Laser science and technology (ultrashort pulse lasers, UV-X ray lasers, high power laser facilities and laser fusion, laser isotope separation) 4. Laser and nonlinear materials (rare earth elements doped laser glasses and crystals, tunable laser crystals, borate series and organic nonlinear crystals) 5. Optoelectronic science and technology (Optical communication, optical data storage, optical computing) The current situation and developing prospect of optical and optoelectronic industry in China are presented. Furthermore it points out that the optical industry could be developed vigorously only if products development capacity is enhanced and new products industrialization is heightened. The main research and education institutions in the optics field in China, as well as the Chinese Optical Society (COS) are introduced.

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Electrical and Optical Properties of Al-doped ZnO Films Deposited by Atomic Layer Deposition (Atomic Layer Deposition법에 의한 Al-doped ZnO Films의 전기적 및 광학적 특성)

  • An, Ha-Rim;Baek, Seong-Ho;Park, Il-Kyu;Ahn, Hyo-Jin
    • Korean Journal of Materials Research
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    • v.23 no.8
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    • pp.469-475
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    • 2013
  • Al-doped ZnO(AZO) thin films were synthesized using atomid layer deposition(ALD), which acurately controlled the uniform film thickness of the AZO thin films. To investigate the electrical and optical properites of the AZO thin films, AZO films using ALD was controlled to be three different thicknesses (50 nm, 100 nm, and 150 nm). The structural, chemical, electrical, and optical properties of the AZO thin films were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy, field-emssion scanning electron microscopy, atomic force microscopy, Hall measurement system, and UV-Vis spectrophotometry. As the thickness of the AZO thin films increased, the crystallinity of the AZO thin films gradually increased, and the surface morphology of the AZO thin films were transformed from a porous structure to a dense structure. The average surface roughnesses of the samples using atomic force microscopy were ~3.01 nm, ~2.89 nm, and ~2.44 nm, respectively. As the thickness of the AZO filmsincreased, the surface roughness decreased gradually. These results affect the electrical and optical properties of AZO thin films. Therefore, the thickest AZO thin films with 150 nm exhibited excellent resistivity (${\sim}7.00{\times}10^{-4}{\Omega}{\cdot}cm$), high transmittance (~83.2 %), and the best FOM ($5.71{\times}10^{-3}{\Omega}^{-1}$). AZO thin films fabricated using ALD may be used as a promising cadidate of TCO materials for optoelectronic applications.

Effect of Electron Irradiation on the Properties of GZO/TiO2 Thin Films (전자빔 조사에 따른 GZO/TiO2 박막의 특성 변화)

  • Kim, Seung-Hong;Kim, Sun-Kyung;Kim, So-Young;Heo, Sung-Bo;Choi, Dong-Hyuk;Son, Dong-Il;Kim, Daeil
    • Journal of the Korean Society for Heat Treatment
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    • v.26 no.6
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    • pp.288-292
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    • 2013
  • We have considered the influence of electron irradiation energy of 300, 600 and 900 eV on the stuctural, electrical and optical properties of GZO/$TiO_2$ thin films prepared with RF magentron sputtering. The optical transmittance and electrical resistivity of the films were dependent on the electron's irradiation energy. The electron irradiated GZO/$TiO_2$ films at 900 eV are grown as a hexagonal wurtzite phase and the resistivity is decreased with electron irradiation energy. The GZO/$TiO_2$ films irradiated at 900 eV shows the lowest resistivity of $4.3{\times}10^{-3}{\Omega}cm$. The optical transmittance in a visible wave length region also increased with the electron irradiation energy. The film that electron irradiated at 900 eV shows 82% of optical transmittance and higher work function of 5.18 eV in this study.