• E2M - 전기 전자와 첨단 소재
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• 제10권8호
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• pp.778-782
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• 1997

In this paper the electronic and optical properties of various poly(3-alkylthiophene)s differing in alkyl chain length were investigated. And their dependence on temperature were also investigated. The electrical conductivity decreased with the increase of alkyl chain length. In addition optical properties were changed due to the shift of edge energy which was caused by the change of the alkyl chain length and rise of temperature. The conformational change of poly(3-alkylthionphene) depending on the alkyl chain length is believed to be responsible to the change of electronic and optical properties of materials.

• Journal of the Optical Society of Korea
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• 제13권3호
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• pp.341-348
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• 2009

We report the development of full-field swept-source optical coherence tomography (SS-OCT) in the wavelength range of 815-870 nm using a unique combination of super-luminescent diode (SLD) as broad-band light source and acousto-optic tunable filter (AOTF) as a frequency-scanning device. Some new applications of full-field SS-OCT in forensic sciences and engineering materials have been demonstrated. Results of simultaneous topography and tomography of latent fingerprints, silicon microelectronic circuits and composite materials are presented. The main advantages of the present system are completely non-mechanical scanning, wide-field, compact and low-cost.

• 반도체디스플레이기술학회지
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• 제3권4호
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• pp.5-11
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• 2004

Optical properties of PET(Polyethylene terephthalate), PC(Polycarbonate), Acrylic resin and PE(Polyethylene) sheets were studied as a function of heat treating temperature of $60^{\circ}C$ to $150^{\circ}C$. By the heat treatment, optical properties of transmittance, absorbance, and reflectance showed a considerable change with different ways according to the materials. To understand the reason of optical property change, X-ray diffraction and surface morphology were also investigated. It was observed that small crystallite and pore that can cause scattering largely affect the transmittance. It was suggested that change of surface chemical bond induce the reflectance variation.

• 열처리공학회지
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• 제29권5호
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• pp.216-219
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• 2016

$SnO_2$ single layer films (100 nm thick) and 2 nm thick Ni intermediated $SnO_2$ films were deposited on glass substrate by RF and DC magnetron sputtering without intentional substrate heating and then the influence of the Ni interlayer on the electrical and optical properties of the films were investigated. As deposited $SnO_2$ single layer films show the optical transmittance of 82.6% in the visible wavelength region and a resistivity of $6.6{ \times}10^{-3}{\Omega}cm$, while $SnO_2/Ni/SnO_2$ trilayer films show a lower resistivity of $2.7{ \times}10^{-3}{\Omega}cm$ and an optical transmittance of 76.3% in this study. Based on the figure of merit, it can be concluded that the intermediate Ni thin film effectively enhances the opto-electrical performance of $SnO_2$ films for use as transparent conducting oxides in flexible display applications.

• 정보저장시스템학회논문집
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• 제1권1호
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• pp.93-98
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• 2005

Rewritable optical disk is one of the essential data storage media in these days, which takes advantage of the different optical properties in the amorphous and crystalline states of phase change materials. As well known, data transfer rate is one of the most important parameter of the phase change optical disks, which is mostly limited by the crystallization speed of recording media. Therefore, we doped Sn/Bi to $Ge_2Sb_2Te_5$ alloy in order to improve the crystallization speed and investigated the dependence of phase change characteristics on Sn/Bi doping concentration. The Sn/Bi doped $Ge_2Sb_2Te_5$ thin film was deposited by RF magnetron co-sputtering system and phase change characteristics were investigated by X-ray diffraction (XRD), static tester, UV-visible spectrophotometer, electron probe microanalysis (EPMA), inductively coupled plasma mass spectrometer (ICP-MS) and atomic force microscopy (AFM). Optimum doping concentration of Bi and Sn were 5${\~}$6 at.$\%$ and the minimum time for crystallization was below than 20 ns. This improvement is correlated with the simple crystalline structure of Sn/Bi doped $Ge_2Sb_2Te_5$ and the reduced activation barrier arising from Sn/Bi doping. The results indicate that Sn/Bi might play an important role in the transformation kinetics of phase change materials..

• 한국광학회:학술대회논문집
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• 한국광학회 1998년도 제15회 광학 및 양자전자 학술발표회 논문집
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• pp.226-227
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• 1998

• 한국고분자학회지:고분자과학과기술
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• 제7권6호
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• pp.646-654
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• 1996

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 하계학술발표회
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• pp.14-15
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• 2001

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 하계학술발표회
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• pp.8-9
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• 2001

• 한국고분자학회지:고분자과학과기술
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• 제21권1호
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• pp.3-9
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• 2010