• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.642-642
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• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.13 no.1
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• pp.55-61
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• 2015

When a radiation detector is applied to the measurement of the radioactivity of high-level of radioactive materials or the rapid response to the nuclear accident, several collimators with the different inner radii should be prepared according to the level of dose rate. This makes the in-situ measurement impractical, because of the heavy weight of the collimator. In this study, an IRIS collimator was developed so as to have a function of controlling the inner radius, with the same method used in optical camera, to vary the attenuation ratio of radiation. The shutter was made to have the double tungsten layers with different phase angles to prevent the radiation from penetrating owing to the mechanical tolerance. The performance evaluation through the MCNP code was conducted by calculating the attenuation ratio according to the inner radius of the collimator. The attenuation ratio was marked on the outer scale ring of the collimator. It is expected that when a radiation detector with the IRIS collimator is used for the in-situ measurement, it can change the attenuation ratio of the incident photon to the detector without replacing the collimator.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.2
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• pp.409-413
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• 2010

We fabricated 10 nm-thick cobalt silicide($CoSi_2$) as a buffer layer on a p-type Si(100) substrate to investigate the possibility of GaN epitaxial growth on $CoSi_2/Si(100)$ substrates. We deposited 500 nm-GaN on the cobalt silicide buffer layer at low temperature with a PA-MBE (plasma assisted-molecular beam epitaxy) after the $CoSi_2/Si$ substrates were cleaned by HF solution. An optical microscopy, AFM, TEM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. For the GaN samples without HF cleaning, they showed no GaN epitaxial growth. For the GaN samples with HF cleaning, they showed $4\;{\mu}m$-thick GaN epitaxial growth due to surface etching of the silicide layers. Through XRD $\omega$-scan of GaN <0002> direction, we confirmed the cyrstallinity of GaN epitaxy is $2.7^{\circ}$ which is comparable with that of sapphire substrate. Our result implied that $CoSi_2/Si(100)$ substrate would be a good buffer and substrate for GaN epitaxial growth.

• Journal of Conservation Science
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• v.30 no.4
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• pp.353-364
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• 2014

Formaldehyde(HCHO) may have a damage effect on Korean traditional textiles, because concentration is high and occurrence frequency is frequent at the exhibition room and storage area. Total 20 specimens were prepared using 4 different materials (silk, cotton, ramie, hemp) after dyeing with 5 colors (undyed, red, yellow, blue, black). The specimens were exposed to HCHO gas in the test chamber. The gas acceleration test was conducted to identify the deterioration of Korean traditional textiles according to HCHO concentration(0.5, 1, 10, 100, 500ppm), to temperature-humidity condition at HCHO 500ppm, and deterioration conditions at HCHO 500ppm. Optical, chemical, and physical evaluation was carried out after the exposure. The results, color difference, grey scale rating, formate($HCO_2{^-}$) of some textiles increased at 500ppm, while pH decreased at 500ppm. Also, color difference, grey scale rating, formate($HCO_2{^-}$) of some textiles increased double damage at high temperatures & humidity, high humidity condition. But, damages of accelerated degradation textiles were slight, because of degradation degree and degradation products. The results suggest that determined the damage to the korean traditional textile, damage level, damage-weighted condition, damage to accelerated degradation textiles. In addition, formaldehyde damaged to yellowing of red textiles, bleaching of accelerated degradation textiles, formic acid damaged to bleaching of total 20 specimens.

• Journal of Korean Ophthalmic Optics Society
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• v.19 no.3
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• pp.315-322
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• 2014

Purpose: The physical and optical characteristics of hydrophilic tinted contact lens containing titanium silicon oxide nanoparticles and the basic hydrogel contact lens material containing 4-iodoaniline were examined. In this study, the utility of titanium silicon oxide nanoparticles as a UV-blocking material for ophthalmologic devices were investigated by measuring the UV transmittance of the produced polymer. Also, titanium silicon oxide nanoparticles only without the addition of 4-iodoaniline in primary contact lens materials by copolymerizing two groups were compared. Methods: For manufacturing hydrogel lens, HEMA, MA, MMA, 4-iodoaniline and a cross-linker EGDMA were copolymerized in the presence of AIBN as an initiator. Also, the titanium silicon oxide nanoparticles was used as additive. After polymerization the physical properties such as water content, refractive index, contact angle and spectral transmittance of produced contact lenses were measured. Results: Measurement of the physical properties of the copolymerized material showed that the water content, refractive index, UV-B transmittance and contact angle were in the range of 35.01~38.60%, 1.4350~1.4418, $34.15{\sim}57.25^{\circ}$ and 1.0~10.0%, respectively. Titanium silicon oxide nanoparticles is not used as an additive in the experimental group, the results of the measurement showed that the water content, refractive index, contan angle and UV-B transmittance of the hydrogel lens polymer was 34.00~36.80%, 1.4378~1.4420, $40.15{\sim}60.16^{\circ}$ and 1.8~25.0%, respectively. Conclusions: Also, the transmittance for UV light was reduced significantly in combinations containing titanium oxide nanoparticles.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.3
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• pp.1-6
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• 2017

Functional coatings, such as anti-reflection and self-cleaning, are frequently applied to cover glass for photovoltaic applications. Anti-reflection coatings made of mesoporous silica film have been shown to enhance the light transmittance. $TiO_2$ photocatalyst films are often applied as a self-cleaning coating. In this study, transparent hydrophobic anti-reflective and self-cleaning coatings made of $SiO_2/TiO_2$ thin layers were fabricated on a slide glass substrate by the sol-gel and dip-coating processes. The morphology of the functional coatings was characterized by field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). The optical properties of the functional coatings were investigated using an UV-visible spectrophotometer. Contact angle measurements were performed to confirm the hydrophobicity of the surface. The results showed that the $TiO_2$ films exhibit a high transmittance comparable to that of the bare slide glass substrate. The $TiO_2$ nanoparticles make the film more reflective and lead to a lower transmittance. However, the transmittance of the $SiO_2/TiO_2$ thin layers is 93.5% at 550 nm with a contact angle of $110^{\circ}$, which is higher than that of the bare slide glass (2.0%).

• Korean Journal of Optics and Photonics
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• v.20 no.3
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• pp.175-181
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• 2009

Holographic lithography is one of the potential technologies for next generation lithography which can print large areas (6") as well as very fine patterns ($0.35{\mu}m$). Usually, photolithography has been developed with two target purposes. One was for LCD applications which require large areas (over 6") and micro pattern (over $1.5{\mu}m$) exposure. The other was for semiconductor applications which require small areas (1.5") and nano pattern (under $0.2{\mu}m$) exposure. However, holographic lithography can print fine patterns from $0.35{\mu}m$ to $1.5{\mu}m$ keeping the exposure area inside 6". This is one of the great advantages in order to realize high speed fine pattern photolithography. How? It is because holographic lithography is taking holographic optics instead of projection optics. A hologram mask is the key component of holographic optics, which can perform the same function as projection optics. In this paper, Surface-Relief TIR Hologram Mask technology is introduced, and enables more robust hologram masks than those previously reported that were formed in photopolymer recording materials. We describe the important parameters in the fabrication process and their optimization, and we evaluate the patterns printed from the surface-relief TIR hologram masks.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.202-209
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• 2002

The stochiometric mix of evaporating materials for the $CuInSe_2$single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInSe_2$compound crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$single crystal thin films measured from Hall effect by van der Pauw method. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr. From the photoluminescence measurement on $CuInSe_2$single crystal thin film, we observed free exciton ($E_x$) existing only high quality crystal and neutral bound exciton ($A^{\circ}$, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral donor bound exciton were 7 meV and 5.9 meV, respectivity. By haynes rule, an activation energy of impurity was 59 meV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.211-220
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• 1998

The stochiometric composition of $AgGaS_2$polycrystal source materials for the single crystal thin films were prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns, it was found that the polycrystal $AgGaS_2$has tetragonal structure of which lattice constant $a_0\;and \;c_0$ were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$single crystal thin film was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5 $mu \textrm{m}$/h. The crystallinity of the grown single crystal thin films was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by${\Alpha};=;8.695{\times}10^{-4};eV/K,and;{\beta};=;332;K$. from the photocurrent spectra by illumination of polarized light of the $AgGaS_2$single crystal thin film, we have found that crystal field splitting $\Delta$Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.4
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• pp.159-164
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• 2009

We fabricated 40 nm-thick cobalt silicide ($CoSi_2$) as a buffer layer, on p-type Si(100) and Si(111) substrates to investigate the possibility of GaN epitaxial growth on $CoSi_2$/Si substrates. We deposited GaN using a HVPE (hydride vapor phase epitaxy) with two processes of process I ($850^{\circ}C$-12 minutes + $1080^{\circ}C$-30 minutes) and process II ($557^{\circ}C$-5 minutes + $900^{\circ}C$-5 minutes) on $CoSi_2$/Si substrates. An optical microscopy, FE-SEM, AFM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. In case of process I, it showed no GaN epitaxial growth. However, in process II, it showed that GaN epitaxial growth occurred. Especially, in process II, GaN layer showed selfaligned substrate separation from silicon substrate. Through XRD ${\omega}$-scan of GaN <0002> direction, we confirmed that the combination of cobalt silicide and Si(100) as a buffer and HVPE at low temperature (process II) was helpful for GaN epitaxy growth.