• Journal of the Korean Society for Precision Engineering
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• v.25 no.4
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• pp.134-139
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• 2008

A spirally arrayed nano-pattern is designed as a model pattern for the next generation optical storage media. The pattern consists off types of embossed rectangular dot, which are 50nm, 100nm, 150nm and 200nm in length and 50nm in width. The height of the dot is designed to be 50nm. The pitch of the spiral track of the pattern is 100nm. A ER(Electron resist) master for this pattern is fabricated by e-beam lithography process. The ER is first spin-coated to be 50nm thick on a Si wafer and then the model pattern is written on the coated ER layer by e-beam. After developing this pattern written wafer in the solution, a ER pattern master is fabricated. The most conventional e-beam machine can write patterns in orthogonal way, so we made our own pattern generator which can write the pattern in circular or spiral way. This program generates the patterns to be compatible with the e-beam machine from Raith(Raith 150). To fabricate 50nm pattern master precisely, a series of experiments were done including the design compensation for the pattern size, optimization of the dose, acceleration voltage, aperture size and developing. Through these experiments, we conclude that the higher accelerating voltages and smaller aperture size are better for mastering the nano pattern which is in order of 50nm. With the optimized e-beam lithography process, a spiral arrayed 50nm pattern master adopting PMMA resist was fabricated to have dimensional accuracy over 95% compared to the designed. Using this pattern master, a metal pattern stamp will be fabricated by Ni electro plating for injection molding of the patterned plastic substrate.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.124-129
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• 2015

Organic electronics are the domain in which the components and circuits are made of organic materials. This new electronics help to realize electronic and optoelectronic devices on flexible substrates. In recent years, organic materials have replaced conventional semiconductors in many electronic components such as, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic photovoltaic (OPVs). It is well known that organic light emitting diodes (OLEDs) have many advantages in comparison with inorganic light-emitting diodes LEDs. These advantages include the low price of manufacturing, large area of electroluminescent display, uniform emission and lower the requirement for power. The aim of this paper is to model polymer LEDs and OLEDs made with small molecules for studying the electrical and optical characteristics. The purpose of this modeling process is, to obtain information about the running of OLEDs, as well as, the injection and charge transport mechanisms. The first simulation structure used in this paper is a mono layer device; typically consisting of the poly (2-methoxy-5(2'-ethyl) hexoxy-phenylenevinylene) (MEH-PPV) polymer sandwiched between an anode with a high work function, usually an indium tin oxide (ITO) substrate, and a cathode with a relatively low work function, such as Al. Electrons will then be injected from the cathode and recombine with electron holes injected from the anode, emitting light. In the second structure, we replaced MEH-PPV by tris (8-hydroxyquinolinato) aluminum (Alq₃). This simulation uses, the Poole-Frenkel -like mobility model and the Langevin bimolecular recombination model as the transport and recombination mechanism. These models are enabled in ATLAS- SILVACO. To optimize OLED performance, we propose to change some parameters in this device, such as doping concentration, thickness and electrode materials.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.215-219
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• 2004

Metal-chelate derivatives have been investigated intensively as an emitting layer and recognize to have excellent electroluminescence(EL) properties. We synthesized new luminescent material, 1,4-dihydoxy-5,8-naphtaquinone $Aiq_3$ complex($Al_2Nq_4$) and investigated the electrical optical properties. OLED has potential candidates for information display with merits of thickness, low power and high efficiency. Although the OLED show a lot of advantages for information display, it has the limit of inorganic(metal)/ organic interface. In this study, the two methods are used to study the interface of metal/organic in OLED. First, we treated $O_2$ plasma on an ITO thin film by using RIE system, and analyzed the ingredient of ITO thin film according to change of the processing conditions. We used the RDS and the XPS for the ingredient analysis of the surface and bulk. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM. We fabricated OLED using substrate that was treated optimum ITO surface. Second, we used the buffer layer of CuPc to improve the characteristics of the interface and the hole injection in OLED. The result of the study for electrical and optical properties by using I V L T System(Flat Panel Display Analysis System), we confirmed that the electrical properties and the luminance properties were improved.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.252-257
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• 1997

Organic EL devices, which have the sing3e-layer structure of ITO(indium-tin-oxide) /PPV(poly(p-phenylene vinylene))/cathode and the double-layer structure of ITO/PVK (poly(N- vinylcarbazole)) /PPV/cathode, were fabricated and their electro-optical properties were investigated. Experimental results, in single-layer structure, shown that the increment of temperature for thermal conversion of PPV film from $140^{\circ}C$ to $260^{\circ}C$ decreases the maximum luminance from $118.8\;cd/m^{2}$(20V) to $21.14\;cd/m^{2}$(28V) and shift the maximum peak of EL spectrum from 500nm to 580nm. The lower the work function of cathode is, the more the luminance and injection current of device. In double-layer structure, as the concentration of PVK solution decreases from 0.5 wt% to 0.05 wt%, the luminance of device increases from $70.71\;cd/m^{2}$(32V) to $152.7\;cd/m^{2}$(26V).

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.37-42
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• 2007

We fabricated the polymer light emitting diodes (PLEDs) with ITO/PEDOT:PSS/PVK/PFO:MEH-PPV/LiF/Al structures. The effect of the thickness of PEDOT:PSS hole injection layer(HIL) on the electrical and optical properties of PLEDs was investigated. In addition, PVK hole transport layer(HTL) was introduced in the PLED device, and compared the properties of the PLEDS with and without PVX layer. All organic film layers were prepared by the spin coating method on the plasma treated ITO/glass substrates. As the thickness of PEDOT:PSS film layer decreased from about 80 nm to 50 nm, the luminance of PLED device increased from $220cd/m^2$에서 $450cd/m^2$. This may be ascribed to the increased transportation efficiency of the holes into the emission layer of PLED. The maximum current density and luminance were obtained fir the PLED device with PVX hole transport layer, showing that the current density and luminance were $268mA/cm^2\;and\;540cd/m^2$ at 12V, respectively. This values were improved by about 14% and 22% in current density and luminance compared with the PLED device without PVK layer.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.37-43
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• 2009

Temperature and injection current dependence of electroluminescence(EL) spectral intensity of the $In_xGa_{1-x}N$/GaN multi-quantum wells(MQW) have been studied over a wide temperature range and as a function of injection current level. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents shows a drastic difference. This unique EL efficiency variation pattern with temperature and current can be explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields. Increase of the indium content in $In_xGa_{1-x}N$/GaN multiple quantum wells gives rise to a redshift of 80 meV and 22 meV for green and blue MQW, respectively. It can be explained by carrier localization by potential fluctuation of multiple quantum well and MQW structures also shows a keen difference owing to the different indium content in InGaN/GaN MQW.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.150.2-150.2
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• 2015

In this study, we analyzed the electric and optical characteristics by using various deposition rate ($0.5{\AA}$, $1.0{\AA}$ and $1.5{\AA}/s$) in order to enhance the performance in organic light-emitting devices (OLED). The organic multi-layer structures were deposited with NPB ($500{\AA}$ as hole transport layer), Alq3 ($600{\AA}$ as electron transport layer and emission layer) and LiF ($8{\AA}$ as electron injection layer) via SUNIC PLUS200 on Glass/ITO substrates. In this experiment, we examined the relationship between porous state of organic deposition and mobility of the organic materials. Among the three deposition rates, $0.5{\AA}/s$ achieved the highest performance of (10,786cd/m2, 4.387cd/A) comparing with that of $1{\AA}/s$ (7,779cd/m2, 3.281cd/A) and $1.5{\AA}/s$ (5,167cd/m2, 2.693cd/A). We confirmed that low deposition rate helps to arrange organic materials densely and to move easily another atomic location using inter-chain transporting by orbital overlap.

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.5 no.2
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• pp.101-112
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• 2019

Herein, 2-nitroimidazole-fluorophore conjugates were synthesized by linking 2-nitroimidazole and FITC or RITC via thiourea bonds. The prepared derivatives were stable for 2 h in Dulbecco's modified Eagle's medium (DMEM) at 37 ℃. The novel conjugates were studied for their in vitro uptake under hypoxic conditions using U87MG and CT-26 cell lines, showing significantly higher uptakes in hypoxic than normoxic cells. Immunohistochemical analysis confirmed hypoxia in U87MG and CT-26 xenografted tumor tissues. Moreover, the prepared conjugates were evaluated by in vivo experiments after intravenous injection in U87MG and CT-26 xenografted mice. Hypoxia was confirmed by immunohistochemistry of the prepared derivatives with co-injected pimonidazole. Confocal microscopy of the prepared derivatives showed strong fluorescence in hypoxic tumor tissues correlated with the pimonidazole distribution. This suggested that the 2-nitroimidazole-fluorophore conjugates are promising optical imaging probes for tumor hypoxia and are promising substitutes for pimonidazole immunohistochemistry, which requires a multi-step procedure of incubation involving antibody, second antibody, dye, hydrogen peroxide, and multiple washing steps.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.496-496
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• 2013

스마트윈도우는 디스플레이, 산업용 외장재 등 다양한 분야에 응용이 가능하며, 특히 전기변색을 이용한 디바이스는 나노코팅 기술을 통한 나노입자 및 나노가공제어 등 나노융합기술을 접목할 수 있다. 전기변색 디바이스는유리 또는 필름 기판소재를 통해 제작이 가능하며, 본 연구에서는 전기변색의 산화, 환원반응에 의해 재료의 광특성이 가역적으로 변화할 수 있는 물질을 증착하여 기존 라미네이터 및 Sol-Gel방식의 전해질보다 열화현상에의한 성능저하를 막아주는 박막전해질 코팅 연구이다. 전기변색 소자는 외부 인가 전압(external voltage)에 의해 유도된 전하의 주입(injection) 과 추출(extraction)을 통하여 그 광학적 특성(optical property)을 가역적으로(reversibly) 변 화시킬 수 있는 특징을 가지고 있다. 전기변색소재의 원리를 간략하게 설명하면 대표적인 환원착색 물질인 전기변색층(WO, MoO, Nb2O5 등)으로 Li+ 또는 H+과 전자가 주입되면 전기변색되고 방출 시는 투명하게 되며, 반대로산화착색 물질인(V2O5, NiO, IrO, MnO 등)으로 Li+ 또는 H+과 전자가 방출되면 변색되고 주입되면 투명하게 되는 것이다. 본 연구에서는 전자가 주입되는 환원착색물질인 WO와 함께 Ta2O5박막을 증착하여 광학적특성을 연구하고 박막의 두께 및 전압인가에따른 변색 및 응답속도를 연구하고자 한다.