• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.42-46
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• 2000

${\beta}{\cdot}In_2S_3$ 및 ${\beta}{\cdot}In_2S_3:Co^{2+}$ 은 $In_2S_3$+S+ZnS를 출발물질로 하여 ($ZnCl_2+I_2$)를 수송매체로 사용한 chemical transport reaction method로 성장시켰다. 성장된 단결정은 tetragonal structure를 갖고 298K에서 indirect optical energy gap은 2.240eV, 1.814eV로 각각 주어졌고, direct optical energy gap은 2.639eV, 2.175eV로 각각 주어졌다. ${\beta}{\cdot}In_2S_3:Co^{2+}$ single crystal에서 impurity optical absorption peak가 나타났으며, 이들 peaks의 origin은 $Co^{2+}(Td)$ ion의 energy level 간의 electron transition임을 crystal field theory를 적용하여 규명하였다.

• Journal of the Optical Society of Korea
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• v.1 no.2
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• pp.100-103
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• 1997

We perform degenerate and nondegenerate pump-probe experiments on bulk GaAs at 100 K below the band gap. We mostly observe a negative differential transmission signal both in the degenerate and nondegenerate experiments. We interpret our signal as due to two-photon absorption. This negative signal has a different origin from the normally considered band gap renormalization for resonant excitations.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.227-232
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• 1994

Diamondlike carbon thin film has been fabricated with low discharging frequency, 450KHz by plasma enhanced chemical vapor deposition. Its physical properties such as optical band gap, microhardness and internal stress have been compared with 13.56MHz film. Optical band gap of 450KHz DLC thin film was less than 13.56MHz film and it was found that C-H bond concentration and total hydrogen contents in the film decreased greatly as the result of FT-IR and CHN analysis. Also, when DLC thin film was fabricated with low discharging frequency, it was expected that the adhesion of the film to the substrate was improved by the great decrease of internal stress without any considerable decrease of microhardness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11b
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• pp.1-6
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• 2004

In this paper author describe the undoped and $Co^{2+}$ (0.5mole%)doped $Cd_4GeS_6$ single crystals were grown by the chemical transporting reaction(CTR) method using high purity(6N) Cd, $GeS_2$, S elements. It was found from the analysis of X-ray diffraction that the undoped and $Co^{2+}$(0.5mole%) doped $Cd_{4}GeS_{6}$ compounds have a monoclinic structure in space grop Cc. The optical energy band gap was direct band gap and temperature dependence of optical energy gap was fitted well to Varshni equation. Impurity optical absorption peaks due to the doped cobalt in the $Cd_4GeS_6:Co^{2+}$ single crystal were observed at 3593cm-1, 5048cm-1, 5901cm-1, 7322cm-1, 12834cm-1, 13250cm-1, 14250cm-1，and 14975cm-1 at 11.3K.

• Korean Journal of Materials Research
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• v.15 no.10
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• pp.657-661
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• 2005

[ $ZnHgGa_4Se_8\;and\;ZnHgGa_4Se_8::Co^{2+}$ ] single crystals were grown by the Bridgman-Stockbarger method. The single crystals crystallized into a defect chalcopyrite structure. The optical energy band gap of the single crystals was investigated in the temperature range 11-300K. The optical energy band gap of the $ZnHgGa_4Se_8:Co^{2+}$ single crystal was smaller than that of the $ZnHgGa_4Se_8$ single crystal. The temperature dependence of the optical energy band gap of the single crystals was well fitted by the Varshni equqtion. The impurity optical absorption spectrum of the $ZnHgGa_4Se_8:Co^{2+}$ single crystal was measured in the wavelength region 300-2300 m at 80 K. Impurity absorption peaks in the spectrum were analyzed within the framework of the crystal field theory and were attributed to the electron transitions between the energy levels of $Co^{2+}$ sited in the Td symmetry point.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.15 no.1 s.94
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• pp.12-19
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• 2005

This paper proposed a dual actuator using Bimorph PZT for information storage device based on prove array NSOM(near-field scanning optical microscopy). The gap between the media and the optical head should be maintained within the optical tolerance. Therefore, a new actuator having high sensitivity is required. Bimorph PZT, which has fast access time and high sensitivity characteristic, is suitable for this precise actuating system. This paper is focused on derivation of mathematical model of dual Bimorph PZT actuator and control algorithm. Hamilton's principle was used for mathematical model. The model is verified by FEA(finite element analysis), and compared with experimental results. Different control algorithms were used for two Bimorph PZT actuating same direction and opposite direction. The gap between recording media and optical head was controlled within 20nm in experiment.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.862-863
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• 2006

According to the experiment results, the alignment of FLC cell can become more uniform at thick cell gap by adjusting the amplitude of the aligned AC electric field which is applying to the FLC cell during $N^{\ast}-SmC^{\ast}$ phase transition. If the amplitude of AC electric field is high enough, the FLC molecules forced with the amplitude and aligned to a particular direction.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.288.1-288.1
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• 2014

We investigated the optical properties of Ge1-xSex and Ge1-x-ySexAsy amorphous semiconductor films using spectroscopic ellipsometry and Raman spectroscopy. The dielectric functions and absorption coefficients of the amorphous films were determined from the measured ellipsometric angles. We obtained the optical gap energies and Urbach energies from the absorption coefficients, and found a strong bowing effect in the optical gap energy of Ge1-x-ySexAsy where the endpoint binaries were Ge0.50Se0.50 and Ge0.31As0.69. Based on the correlation between optical gap energies and Urbach energies, the large bowing parameter was attributed to the electronic disorder. We found the composition dependence of several phonon modes using Raman spectroscopy. For Ge1-x-ySexAsy, the D mode (232-267 cm-1) changed from As-As (or As3 pyramid), to As(Se1/2)3 pyramid, and finally to Se clusters, as the Se composition increased. Resonant Raman phenomenon was observed in Ge0.38Se0.62 at a laser excitation of 514 nm (2.41 eV). We verified that this laser energy corresponds to the transition energy of Ge0.38Se0.62 using the second derivative of the dielectric function of Ge0.38Se0.62.

• Journal of the Optical Society of Korea
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• v.12 no.3
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• pp.210-214
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• 2008

A critical angle method was used to measure the index of refraction of a solid medium when an air gap between the prism and the medium is present. The gap effect was analyzed both numerically and experimentally. Since the total internal reflection is severely disturbed by the large gap, determination of the critical angle and the resulting refractive index becomes ambiguous and inaccurate. By using an index matching fluid, we could determine the index of refraction with an uncertainty of ${\pm}2{\times}1^{-3}$ even when the gap is as large as 1 ${\mu}m$.

• Transactions of the Society of Information Storage Systems
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• v.3 no.1
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• pp.1-4
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• 2007

A high density optical data storage device has been required for many years. In the field of the optical data storage, a near-field recording (NFR) technology is considered as a next generation one for achieving the high data density. Due to an evanescent wave effect occurred under 100nm distance which is the excessively small distance between the SIL and the disc, the most significant and difficult problem in this technology is to maintain a gap between a solid immersion lens (SIL) and a disc. Also, maintaining the gap under at least 50nm is required in the NFR gap servo system to use the evanescent wave effect efficiently. There are some institutes that have shown the novel gap servo control. In general, they use a mode switching servo method which consists of approach, hand-over and gap control mode. However there is a critical problem such as an overshoot at the tuning point from the approach mode to the hand-over mode, which may cause a collision between the SIL and the disc. In this paper, we show our NFR system and an improved gap servo system using an exponential function as the approach mode which can reduce the overshoot.