• 한국진공학회지
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• 제2권2호
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• pp.227-235
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• 1993

$SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, and $Sb_{1-x}Bi_xSeI:Co$ single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by $E_g(x)=E_g(0)-Ax+Bx^2$. The impurity optical absorption peaks due to cobalt deped with impurity are attributed to the electron transitions between the split energy levels of $Co^{2+}$ and $Co^{3+}$ ions sited at $T_d$symmetry of the host lattice.

• 한국전기전자재료학회논문지
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• 제21권3호
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• pp.242-248
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• 2008

The structural, optical and electrical properties of ZnO films doped with 1.5 at% of 3A materials(B, Al, Ga, In) were studied by sol-gel process. The films were found to be c-axis (002) oriented hexagonal structure on glass substrate, when post heated at 500 $^{\circ}C$. The surface of the films showed a uniform and nano size microstructure and the crystalline size of doped films decreased. The lattice constants of ZnO:B/Al/Ga increased than that of ZnO, while ZnO:In decreased. All the films were highly transparent(above 90 %) in the visible region. The energy gaps of ZnO:B/Al/Ga were increased a little, but that of ZnO:In was not changed. The resistivities of ZnO:Al/Ga/In were less than 0.1 $\Omega$cm. All the films showed a semiconductor properties in the light or temperature, however ZnO:In was less sensitive to it. A figure of merit of ZnO:In had the highest value of 0.025 $\Omega^{-1}$ in all samples.

• Bulletin of the Korean Chemical Society
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• 제34권10호
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• pp.2995-3004
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• 2013

The structural, electronic, and optical properties of poly(3-hexylthiophene) (P3HT) have been comprehensively studied by density functional theory (DFT) to rationalize the experimentally observed properties. Rather, we employed periodic boundary conditions (PBC) method to simulate the polymer block, and calculated effective charge mass from the band structure calculation for describing charge transport properties. The simulated results of P3HT are consistent with the experimental results in band gaps, absorption spectra, and effective charge mass. Based on the same calculated methods as P3HT, a series of polymers have been designed on the basis of the two types of building blocks, furofurans and furofurans substituted with cyano (CN) groups, to investigate suitable polymers toward polymer solar cell (PSC) materials. The calculated results reveal that the polymers substituted with CN groups have good structural stability, low-lying FMO energy levels, wide absorption spectra, and smaller effective masses, which are due to their good rigidity and conjugation in comparison with P3HT. Besides, the insertion of CN groups improves the performance of PSC. Synthetically, the designed polymers PFF1 and PFF2 are the champion candidates toward PSC relative to P3HT.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.81-81
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• 2003

The stochiometric mixture of evaporating materials for the CuGaSe$_2$ single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe$_2$, it was found tetragonal structure whose lattice constant no and co were 5.615$\AA$ and 11.025$\AA$, respectively. To obtains the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5${\mu}{\textrm}{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30K to 150K and by polar optical scattering in the temperature range 150K to 293K. The optical energy gaps were found to be 1.68eV for CuGaSe$_2$ single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by a=9.615$\times$ 10$^{-4}$ eV/K, and $\beta$=335K. From the photocurrent spectra by illumination of polarized light of the CuGaSe$_2$ single crystal thin films. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900eV and 0.2498eV, respectively. From the PL spectra at 20K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352eV, 0.0932eV, respectively.

• Journal of Radiation Protection and Research
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• 제42권3호
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• pp.158-165
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• 2017

Background: Nuclear facilities in South Korea have generally adopted pressurized ion chambers to measure ambient gamma ray exposure rates for monitoring the impact of radiation on the surrounding environment. The rates assessed with pressurized ion chambers do not distinguish between natural and man-made radiation, so a further step is needed to identify the cause of abnormal variation. In contrast, using NaI(Tl) scintillation detectors to detect gamma energy rates can allow an immediate assessment of the cause of variation through an analysis of the energy spectra. Against this backdrop, this study was conducted to propose a more effective way to monitor ambient gamma exposure rates. Materials and Methods: The following methods were used to analyze gamma energy spectra measured from January to November 2016 with NaI detectors installed at the Korea Atomic Energy Research Institute (KAERI) dormitory and Hanbat University. 1) Correlations of the variation of rates measured at the two locations were determined. 2) The dates, intervals, duration, and weather conditions were identified when rates increased by $5nSv{\cdot}h^{-1}$ or more. 3) Differences in the NaI spectra on normal days and days where rates spiked by $5nSv{\cdot}h^{-1}$ or more were studied. 4) An algorithm was derived for automatically calculating the net variation of the rates. Results and Discussion: The rates measured at KAERI and Hanbat University, located 12 kilometers apart, did not show a strong correlation (coefficient of determination = 0.577). Time gaps between spikes in the rates and rainfall were factors that affected the correlation. The weather conditions on days where rates went up by $5nSv{\cdot}h^{-1}$ or more featured rainfall, snowfall, or overcast, as well as an increase in peaks of the gamma rays emitted from the radon decay products of $^{214}Pb$ and $^{214}Bi$ in the spectrum. This study assumed that $^{214}Pb$ and $^{214}Bi$ exist at a radioactive equilibrium, since both have relatively short half-lives of under 30 minutes. Provided that this assumption is true and that the gamma peaks of the 352 keV and 1,764 keV gamma rays emitted from the radionuclides have proportional count rates, no man-made radiation should be present between the two energy levels. This study proved that this assumption was true by demonstrating a linear correlation between the count rates of these two gamma peaks. In conclusion, if the count rates of these two peaks detected in the gamma energy spectrum at a certain time maintain the ratio measured at a normal time, such variation can be confirmed to be caused by natural radiation. Conclusion: This study confirmed that both $^{214}Pb$ and $^{214}Bi$ have relatively short half-lives of under 30 minutes, thereby existing in a radioactive equilibrium in the atmosphere. If the gamma peaks of the 352 keV and 1,764 keV gamma rays emitted from these radionuclides have proportional count rates, no man-made radiation should exist between the two energy levels.

• 한국전자통신학회논문지
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• 제15권4호
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• pp.665-670
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• 2020

CIGS 박막 태양 전지의 버퍼층은 흡수층과 윈도우층 사이의 밴드정렬(band alignment)을 통해 에너지 변환 효율을 향상시킨다. ZnS는 무독성의 II-VI 반도체 화합물로서 직접천이형 광대역 밴드갭과 n형 전도성을 가지며, 높은 광투과성, 높은 굴절률 등의 우수한 전기적, 광학적 특성을 가지고 있고, 우수한 격자정합을 가지는 물질이다. 이 연구에서, RF 마그네트론 스퍼터링 방법에 의해 증착 후 급속 열처리에 의해 제작된 ZnS 버퍼층 박막의 구조적, 광학적 특성의 상관관계에 대해 고찰하였다. (111), (220), (311) 면의 섬아연광 입방정 구조를 확인할 수 있고, 상대적으로 저온에서 급속열처리를 수행한 시료에서는 (002) 면의 우르쯔광 육방정 구조가 함께 나타나는 다결정이 되었다. 고온에서 급속열처리 수행한 시료에서는 섬아연광 입방정 구조의 단결정으로 상전이 된다. 화학적 성분 분석을 통해서 Zn/S의 비율이 화학양론에 근접한 시료에서 섬아연광 입방정 구조의 단결정이 나타났음을 확인하였다 급속열처리 온도가 증가할수록 흡수단이 다소간 단파장 쪽으로 이동되고, 가시광 파장 범위에서 평균 광투과율이 증가하는 경향성을 보이며 500℃ 조건에서는 80.40%로 향상되었다.

• 한국결정성장학회지
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• 제8권2호
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• pp.211-220
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• 1998

수평 전기로에서 $AgGaS_2$ 다결정을 합성하여 HWE 방법으로 $AgGaS_2$ 단결정 박막을 성장하였다. $AgGaS_2$ 단결정 박막을 성잘할 때 증발원과 기판의 온도를 각각 $590^{\circ}C$, $440^{\circ}C$로 성장하였을 때 이중결정 X-선 요동곡선(double crystal X-ray diffraction rocking curve, DCRC)의 반폭치(FWHM)값이 124 arcsec로 가장 작아 최적 성장조건이었다. 상온에서 $AgGaS_2$ 단결정 박막의 광흡수 특성으로부터 에너지 띠간격이 2.61cV였다. Band edge에 해당하는 광전도도 peak의 온도 의존성은 Varshni 관계식으로 설명되었으며, Vaeshni 관계식의 상수값은 Eg(0) = 2.7284eV, $\alpha$= 8.695$\times$10-4 eV/K, $\beta$= 332K 로 주어졌다. 광발광 봉우리는 20K에서 414.3nm(2.9926eV)와 414.1nm(2.7249eV)는 free exciton(Ex)의 upper polariton과 lower polariton인 {{{{{E}`_{x} ^{u} }}}}와 {{{{{E}`_{x} ^{L} }}}}, 423.6nm(2.9269eV)는 bound exciton emission에 의한 I로 관측되었다. 또한 455nm(2.7249eV)의 peak는 donor-acceptor pair(DAP)에 기인하는 광발광 봉우리로 관측되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.230-233
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• 2004

The stochiometric mix of evaporating materials for the $CuInS_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuInS_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.524\;{\AA}$ and $11.142\;{\AA}$, respectively. To obtain the single crystal thin films, $CuInS_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperature were 640 t and 430 t, respectively and the thickness of the single crystal thin films was $2{\mu}m$. Hall effect on this sample was measured by the method of van dot Pauw and studied on carrier density and temperature dependence of mobility. The carrier density and mobility deduced from Hall data are $9.64{\times}10^{22}/m^3,\;2.95{\times}10^{-2}\;m^2/V{\cdot}s$ at 293 K, respectively The optical energy gaps were found to be 1.53 eV at room temperature. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the thin film, we have found that the values of spin orbit coupling splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0211 eV and 0.0045 eV at 10 K, respectively. From PL peaks measured at 10K, 807.7nm (1.5350ev) mean Ex peak of the free exciton emission, also 810.3nm (1.5301eV) expresses $I_2$ peak of donor-bound exciton emission and 815.6nm (1.5201eV) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 862.0nm (1.4383eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• Macromolecular Research
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• 제17권2호
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• pp.91-98
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• 2009

Conjugated PPV-derived block copolymers containing 2-ethylhexyloxynaphthalene unit were synthesized and characterized in this study. The resulting polymers were soluble in common organic solvents and showed good thermal stabilities, The weight-average molecular weights ($M_w$) of the copolymers ranged from 246,000 to 475,000 with PDIs of $1.3{\sim}2.1$. The optical properties of these polymers, measured both in a chloroform solution and on a film, showed a maximum absorption at $405{\sim}476\;nm$ for Copolymers $I{\sim}VIII$. In the PL spectra, Copolymers $I{\sim}VIII$ showed maximum peaks at $510{\sim}566\;nm$. The HOMOs, LUMOs and band gaps of the PPV derivatives of Copolymers $I{\sim}VIII$ were $5.30{\sim}5.77$, $3.04{\sim}3.24$, and $2.5{\sim}2.2\;eV$, respectively, The multi-layered, light-emitting diodes of ITO/PEDOT/copolymers/LiF/Al exhibited turn-on voltages of $6{\sim}2.5\;V$ Copolymer VIII exhibited the maximum brightness of $3.657\;cd/m^2$. Particularly, Copolymer VII, with an identical composition of MEH-PPV and naphthalene-PPV, showed a maximum luminance efficiency and power efficiency of 2,63 cd/A and 1.06 lm/W, respectively.

• 한국재료학회지
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• 제12권1호
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• pp.36-43
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• 2002

In this study, the nanosized ZnS thin films that can be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their surface morphology and film thickness and grain size dependence on the growth conditions were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). With decreasing growth temperature and decreasing concentration of precursor solution, the surface morphology of film was found to be improved. Also, the film thickness depends largely on the ammonia concentration. In particular, this is the first time that the surface morphology dependence of ZnS film grown by SGT on the ammonia concentration is reported. The energy band gaps of samples were determined from the optical transmittance values, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS. It was also shown that the quantum size effect of SGT grown ZnS is larger than that of the ZnS films grown by most other growth techniques.