• Title/Summary/Keyword: Optical emission spectrometry

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Spectroscopical Analysis of SiO2 Optical Film Fabricated by FHD(Flame Hydrolysis Deposition) (FHD(Flame Hydrolysis Deposition)공정으로 제작된 SiO2 광도파막의 분광학적 분석)

  • Kim, Yun-Je;Shin, Dong-Wook
    • Journal of the Korean Ceramic Society
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    • v.39 no.9
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    • pp.896-901
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    • 2002
  • Since many process parameters of FHD(Flame Hydrolysis Deposition) are involved in forming multi-component amorphous silica film ($SiO_2-B_2O_3-P_2O_5-GeO_2$), it has not been easy to predict the optical, mechanical and thermal properties of deposited film from the simple process parameters, such as source flow rate. Furthermore, the prediction of final composition of film becomes even more difficult after sintering at high temperature due to the evaporation of volatile dopants. The motivation of the study was to clarify the quantitative relationship between simple process parameters such as the flow rate of source gases and resulting chemical composition of sintered film. Hence, the compositional analysis of silica soot by FTIR(Fourier Transformation Infrared Spectroscopy) and ICP-AES(Inductively Coupled Plasma-Atomic Emission Spectrometry) under the control of the amount of dopant was carried out to obtain the quantitative composition. By measuring spectrum of absorbance from FTIR, the compositional change of B-O, Si-O, OH($H_2O$) in silica film was measured. The concentrations of these dopants were also measured by ICP-AES, which were compared with the FTIR result. The final quantitative relationship between simple process parameters and composition was deduced from the comparison between two results.

Analysis of Toxic Heavy Meatals using Hybrid Neural Network in Glow Discharge Atomic Emission Spectroscoy (글로우 방전 원자방출에서의 Hybrid Neural Network를 이용한 유해 중금속 분석)

  • Lee, J.S.;Lee, S.C.;Choi, K.S.;Kim, Y.S.;So, S.H.;Ha, K.J.;Ryu, D.H.;Cho, T.H.;Jung, M.S.
    • Analytical Science and Technology
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    • v.15 no.5
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    • pp.399-409
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    • 2002
  • A system software on-line spectral analysis of atomic emission spectrometer. The system program consisted of a control part for the optical instruments and the spectrum analysis part the artificial intelligence method to reduce nonlinear error of the wavelengths. McPHERSON 207 Monochromator controlled GPIB communication protocol, and the detector signal was measured from PMT by using A/D Amplifier that was made by Photon_Tek. co.. HNN(Hybrid Neural Network) of artificial intelligence technique was applied to the qualitative analysis of P, Cu, Fe, Cr, and that was accurately applied to the quantitative analysis of Cd with 10 ppb level better than the conventional methods.

Etching Mechanism of $YMnO_3$ Thin Films in High Density $CF_4$/Ar Plasma ($CF_4$/Ar 가스 플라즈마를 이용한 $YMnO_3$ 박막의 식각 반응연구)

  • 김동표;김창일;이철인
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.959-964
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    • 2001
  • We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).

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Purification and Characterization of Phocaecin PI80: An Anti-Listerial Bacteriocin Produced by Streptococcus phocae PI80 Isolated from the Gut of Peneaus indicus (Indian White Shrimp)

  • Satish Kumar, Ramraj;Arul, Venkatesan
    • Journal of Microbiology and Biotechnology
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    • v.19 no.11
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    • pp.1393-1400
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    • 2009
  • A bacteriocin-producing strain PI80 was isolated from the gut of Penaeus indicus (Indian white shrimp) and identified as Streptococcus phocae PI80. The bacteriocin was purified from a culture supernatant to homogeneity as confirmed by Tricine SDS-PAGE. Reverse-phase HPLC analysis revealed a single active fraction eluted at 12.94 min, and MALDI-TOF mass spectrometry analysis showed the molecular mass to be 9.244 kDa. This molecular mass does not correspond to previously described streptococcal bacteriocins. The purified bacteriocin was named phocaecin PI80 from its producer strain, as this is the first report of bacteriocin production by Streptococcus phocae. The bacteriocin exhibited a broad spectrum of activity and inhibited important pathogens: Listeria monocytogenes, Vibrio parahaemolyticus, and V. fischeri. The antibacterial substance was also sensitive to proteolytic enzymes: trypsin, protease, pepsin, and chymotrypsin, yet insensitive to catalase, peroxidase, and diastase, confirming that the inhibition was due to a proteinaceous molecule (i.e., the bacteriocin), and not due to hydrogen peroxide or diacetyl. Phocaecin PI80 moderately tolerated heat treatment (up to $70^{\circ}C$ for 10 min) and resisted certain solvents (acetone, ethanol, and butanol). A massive leakage of $K^+$ ions from E. coli $DH5\alpha$, L. monocytogenes, and V. parahaemolyticus was induced by phocaecin PI80, as measured by Inductively Coupled Plasma Optical Emission Spectrometry (ICPOES). Therefore, the results of this study show that phocaecin PI80 may be a useful tool for inhibiting L. monocytogenes in seafood products that do not usually undergo adequate heat treatment, whereas the cells of Streptococcus phocae PI80 could be used to control vibriosis in shrimp farming.

Retinol, α-tocopherol, and selected minerals in breast milk of lactating women with full-term infants in South Korea

  • Kim, Hyesook;Jung, Byung-Mun;Lee, Bum-Noh;Kim, Yun-Je;Jung, Ji A;Chang, Namsoo
    • Nutrition Research and Practice
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    • v.11 no.1
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    • pp.64-69
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    • 2017
  • BACKGROUND/OBJECTIVES: This study was performed to measure fat-soluble vitamins and minerals in breast milk of Korean lactating mothers who exclusively breastfed their babies. SUBJECTS/METHODS: Breast milk samples were collected from 334 mothers. Concentrations of retinol and ${\alpha}$-tocopherol were analyzed by high performance liquid chromatography ultraviolet spectrometry while concentrations of minerals were measured by inductively coupled plasma optical emission spectrometry. RESULTS: Retinol and ${\alpha}$-tocopherol contents of breast milk were $39.58{\pm}19.64{\mu}g/dL$ and $0.23{\pm}0.13mg/dL$, respectively. Average sodium, potassium, calcium, phosphorus, and magnesium levels in breast milk were $11.11{\pm}5.16$, $38.56{\pm}9.01$, $27.87{\pm}6.10$, $13.56{\pm}3.30$, and $3.05{\pm}0.65mg/dL$, respectively. Contents of trace elements such as iron, zinc, copper, and manganese were $40.26{\pm}46.21$, $98.40{\pm}62.47$, $24.09{\pm}9.03$, and $0.90{\pm}1.63{\mu}g/dL$, respectively. Fat-soluble vitamin concentration was positively correlated with total fat in milk samples, but no significant differences were observed in levels of retinol, ${\alpha}$-tocopherol, or minerals based on whether or not lactating women were taking dietary supplements. CONCLUSIONS: Micronutrient contents of breast milk samples from Korean lactating women were comparable to those of other nations. Retinol and ${\alpha}$-tocopherol levels were correlated and also with total fat in breast milk.

The post annealing effect on the properties of AZO films (AZO 박막의 후 열처리에 따른 특성변화)

  • Ko, Ki-Han;Seo, Jae-Keun;Kim, Jae-Kwang;Cho, Hyung-Jun;Hong, Byung-You;Choi, Won-Seok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.457-458
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    • 2009
  • In this work, transparent conducting Al-doped zinc oxide (AZO) films were prepared on Coming glass substrate by RF magnetron sputtering using an Al-doped ZnO target (Al: 2 wt.%) at room temperature and all films were deposited with athickness of 150 nm. We investigated the effects of the post-annealing temperature and the annealing ambient on structural, electrical and optical properties of AZO films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using rapid thermal annealing equipment in oxygen. The thickness of the film was observed by field emission scanning electron microscopy (FE-SEM) and grain size was calculated from the XRD spectra using the Scherrer equation and their electrical properties were investigated using a hole measurement and the reflectance of AZO films was investigated by UV-VIS spectrometry.

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Etching Mechanism of $YMnO_3$ Thin Films in High Density $CF_{4}/Ar$ Plasma (고밀도 $CF_{4}/Ar$ 플라즈마에서 $YMnO_3$ 박막의 식각 매카니즘)

  • Lee, Cheol-ln;Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05b
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    • pp.12-16
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    • 2001
  • We investigated the etching characteristics of $YMnO_3$ thin films in high-density plasma etching system. In this study. $YMnO_3$ thin films were etched with $CF_{4}/Ar$ gas chemistries in inductively coupled plasma (ICP). Etch rates of $YMnO_3$ were measured according to gas mixing ratios. The maximum etch rate of $YMnO_3$ is 18 nm/min at $CF_{4}/(CF_{4}+Ar)$ of 20%. In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing $CF_4$ content. Chemical states of $YMnO_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. $YF_x$, $MnF_x$ such as YF, $YF_2$, $YF_3$ and $MnF_3$ Were detected using SIMS analysis. The etch slope is about $65^{\circ}C$ and free of residues.

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$Ar/CH_4$ 혼합가스를 이용한 ITO 식각특성

  • 박준용;김현수;염근영
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.244-244
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    • 1999
  • Liquid Crystal Displays(LCDs) 투명성 전도막으로 사용하는 Indium Tin Oxide (ITO)의 고밀도 식각특성을 조사하였다. 특히 ITO식각의 경우, pixel electrode 전극에서 사용되는 underlayer인 SiO2, Si3N4와의 최적의 선택비를 얻는데 중점을 두고 있다. 따라서 본 실험에서는 Inductively Coupled Plasma(ICP)를 이용하여 source power, gas combination, bias voltage, pressure 및 기판온도에 따른 ITO의 식각 특성과 이의 underlayer인 SiO2, Si3N4와의 선택비를 조사하였다. Ar과 CH4를 주된 식각가스로서 사용하였으며 첨가가스로는 O2와 HBr를 사용하였다. ITO의 식각특성을 이해하기 위하여 Quadruple Mass Spectrometry(QMS), Optical emission spectroscopy(OES) 이용하였으며, 식각된 sample의 잔류물을 조사하기 위하여 X-ray photoelectron spectroscopy(XPS)를 이용하여 분석하였다. Ar gas에 적정량의 CH4 혼합이 순수한 Ar 가스로 식각한 경우에 비하여 ITO와 SiO2, Si3N4의 선택비가 높았으며, 더 높은 식각 선택비를 얻기 위하여 Ar/CH 분위기에서 첨가가스 O2, HBr을 사용하였다. Source power 및 bias 증가에 따라 ITO의 식각률은 증가하나, underlayer와의 선택비는 감소함을 보였다. 본 실험에서 측정된 ITO의 high 식각률은 약 1500$\AA$/min이며, SiO2, Si3N4와의 high selectivity는 각각 7:1, 12:1로 나타났다. ITO의 etchrate 및 선택비는 source power, bias, pressure, CH 가스첨가에 의존하였지만 기판온도에는 큰 변화가 없음을 관찰하였다. 또한 적정량의 가스조합으로 식각된 시편의 잔류물을 줄일 수 있었다.

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High rate deposition and mechanical properties of SiOx film on PET and PC polymers by PECVD with the dual frequencies UHF and HF at low temperature

  • Jin, Su-B.;Choi, Yoon-S.;Choi, In-S.;Han, Jeon-G.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.180-180
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    • 2010
  • The design and implementation of high rate deposition process and anti-scratch property of silicon oxide film by PECVD with UHF power were investigated according to the effect of UHF input power with HF bias. New regime of high rate deposition of SiOx films by hybrid plasma process was investigated. The dissociation of OMCTS (C8H24Si4O4) precursor was controlled by plasma processes. SiOx films were deposited on polyethylene terephthalate (PET) and polycarbonate substrate by plasma enhanced chemical vapor deposition (PECVD) using OMCTS with oxygen carrier gas. As the input energy increased, the deposition rate of SiOx film increased. The plasma diagnostics were performed by optical emission spectrometry. The deposition rate was characterized by alpha-step. The mechanical properties of the coatings were examined by nano-indenter and pencil hardness, respectively. The deposition rate of the SiOx films could be controlled by the appropriate intensity of excited neutrals, ionized atoms and UHF input power with HF bias at room temperature, as well as the dissociation of OMCTS.

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A Characteristic Analysis of Physical, Chemical and Electrical Property for Bunker C Fly Ash (Bunkder C유 회분의 물리적, 화학적, 전기적 특성분석)

  • 이재근;이정언;안영철
    • Proceedings of the Korea Society for Energy Engineering kosee Conference
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    • 1996.04a
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    • pp.88-96
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    • 1996
  • The characteristic analysis of fly ash generated from a fired power plant using bunker-C oil has been investigated. Ash size distribution by an optical microscopy with image processing technique, morphological shape by a scanning electron microscope(SEM) and microscope, chemical composition by the inductively coupled plasma emission spectrometry(ICP), and resistivity measurement as a function of temperature and moisture content by the resistivity meter are performed. A study of physical, chemical and electrical characteristics of bunker-C fly ash plays an important role of improving the performance of an electrostatic precipitator and protecting air pollution. The samples of bunker-C fly ash for analysis were collected from the electrostatic precipitator hopper of Ulsan Power Plant Unit 1 and Pusan Power Plant Unit 1. Mass median diameter(MMD) of bunker-C fly ash was measured 12.7${\mu}{\textrm}{m}$, while MMD of fly ash generated from the mixture of bunker-C oil(40%) and domestic anthracitic coal(60%) was 25.7${\mu}{\textrm}{m}$. The morphological structure of bunker-C fly ash consisted of fine particles of non-spherical shape. The primary chemical components of bunker-C fly ash were composed of SiO2(2.36%), Al2O3(4.91%), Fe2O3(14.33%) and C(11.84%). Resistivity of bunker-C fly ash was found to be increased with increasing temperature at the range of 100~15$0^{\circ}C$ and was measured 103~104 ohm-cm.

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