• Korean Journal of Optics and Photonics
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• v.13 no.5
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• pp.421-424
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• 2002

By using SOA (Semiconductor Optical Amplifier) based devices, an all-optical half adder has been successfully demonstrated at 10 Gb/s. All-optical XOR and AND gates are utilized to realize SUM and CARRY. Since SUM and CARRY have been simultaneously realized to form the all-optical half adder, complex calculation and signal processing can be achieved.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.327-328
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• 2007

• Proceedings of the Korean Society of Potoscience Conference
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• spring
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• pp.18-18
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• 1998

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.8-11
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• 2003

For the first time to our knowledge we have developed compact mechanically-induced long-period fiber grating devices which have an excellent tunability in the center wavelength and the depth of the notch. The compactness and ease to tune allow us to include them in other optical devices or systems. The devices were characterized by measuring their transmission spectra with different grating periods and applied pressures. We have also demonstrated the EDFA gain flattening using the mechanically-induced long-period fiber grating devices.

• Ceramist
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• v.21 no.1
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• pp.64-79
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• 2018

Recent years, OLEDs have been progressed intensively and been widely applied to Display and Lighting industry,Almost 100% internal quantum efficiency was achieved by developing new materials and structure optimization. However, external quantum efficiency was still low due to total internal reflection of light inside OLED devices and absorption of light at the surface of metal electrode. In order to improve external quantum efficiency of OLED devices, various kinds of optical functional structures were introduced to inside and outside of OLED devices to increase light extraction efficiency. In this paper, various efforts to apply optical functional structures in OLED devices were reviewed and way to improve light extraction efficency of OLED devices were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.107-110
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• 2002

The optical memory devices of BST thin films to composite $(Ba_{0.7}\;Sr_{0.3})TiO_{3}$ using sol-gel method were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_{2}/Si$ substrate. The structural properties of optical memory devices to be ferroelectric was investigated by fractal analysis and 3-dimension image processing. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$ and $3800[\AA]$. BST thin films exhibited the most pronounced grain growth. The surface morphology image was roughness with coating numbers. The thin films increasing with coating numbers shows a more textured and complex configuration.

• Journal of Photoscience
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• v.9 no.1
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• pp.23-28
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• 2002

In order to obtain thermal-stable, low birefringent, and low optical loss waveguiding materials, we synthesized several fluorinated poly (maleimide-co-glycidylmethacrylate)s using a pentafluorophenylmaleimide (PEM) and two kinds of methacrylate derivatives as comonomers and glycidylmethacrylate as a crosslinker. One comonomer is a linear fluorinated methacrylate (HFBM) and another is a bulky norbornane-derived methacrylate (NMMA). These copolymers could be self-crosslinked by heating due to epoxy groups of glycidylmethacrylates. As a maleimide contents increased to 50 mol%, these copolymers showed high decomposition temperatures of above 300$^{\circ}C$. The refractive index could be precisely controlled by the variation of PFM/HFBA or PFM/NMMA feed ratio in the range of 1.410∼1.508 at 643 nm. The copolymers had very low birefringence in the range of 1∼5${\times}$10$\^$-4/.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.4
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• pp.1-5
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• 2012

By using LED optical devices and improving the efficiency of optical devices as well as lighting apparatus for humans, LED lighting industry puts the purpose of manufacturing the main products related with information, electric, large-sized LCD BLU, automobile, shipbuilding, agriculture, medical treatment, environment, and telecommunications, etc. Moreover, the main products and the industrial lighting products are manufactured with fusion, as the result, LED lighting industry provides various effects as well as sources of technology based on practical use of LED technology in order to develop the industry from the perspective of the lower price, the higher efficiency, the higher function, the deeper reliance. In the future, not only the development of new LED technology but also the fusion and combination of digital IT technologies using wire-wireless communication, sensor, controller, and artificial intelligence will be expected to create new industrial fields.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.249-252
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• 2001

The paper represents the design and fabrication of an electrostatic micro actuator with $p^+$,/TEX> Si cantilevers. The micro actuator consists of a plate suspended by four $p^+$,/TEX> silicon cantilevers and an electrode on a glass substrate. The $p^+$,/TEX> Si structure is fabricated by the boron diffusion process and the anisotropic wet etch process. The cantilevers of the micro actuator curl down because of the residual stress gradient in $p^+$,/TEX> silicon. When the electrostatic forec is applied to the $p^+$,/TEX> cantilevers, the vertical displacement of the plate can be achieved. The deflection of the cantilever due to the residual stress gradient and the vertical displacement by electrostatic force were calculated. The displacement of the plate was measured with a laser displacement meter for various input voltages and frequencies. The feasibility of the proposed micro actuator for the applications to optical pickup devices or optical communication devices was confirmed by the experiments.

• Korean Journal of Optics and Photonics
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• v.2 no.4
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• pp.233-241
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• 1991

Structures, fabrication, and characteristics of top-surface-emitting GaAs four quantum well microlaser are described. The microlasers have good room-temperautre CW characteristivs. The maximum CW laser output is >3mW from a 30 $\mu\textrm{m}$ diameter microlaser and the maximum differential quantum efficiency is >70% from a 10 $\mu\textrm{m}$ diameter microlaser. Active surface emitting laser logic devices are designed and fabricated as a discrete version of a top-surface-emitting laser and heterojunction phototransistor. The active surface emitting laser logic device have high optical gain (>20 overall, >200 differential) and very high on/off ratio. Two-dimensional arrays of top-surface-emitting microlasers and active surface emitting laser logic devices will be critical elements for optical computing, photonic switching and neural network applications.