• Title/Summary/Keyword: Optical concentration

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Development and testing of multicomponent fuel cladding with enhanced accidental performance

  • Krejci, Jakub;Kabatova, Jitka;Manoch, Frantisek;Koci, Jan;Cvrcek, Ladislav;Malek, Jaroslav;Krum, Stanislav;Sutta, Pavel;Bublikova, Petra;Halodova, Patricie;Namburi, Hygreeva Kiran;Sevecek, Martin
    • Nuclear Engineering and Technology
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    • v.52 no.3
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    • pp.597-609
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    • 2020
  • Accident Tolerant Fuels have been widely studied since the Fukushima-Daiichi accident in 2011 as one of the options on how to further enhance the safety of nuclear power plants. Deposition of protective coatings on nuclear fuel claddings has been considered as a near-term concept that will reduce the high-temperature oxidation rate and enhance accidental tolerance of the cladding while providing additional benefits during normal operation and transients. This study focuses on experimental testing of Zr-based alloys coated with Cr-based coatings using Physical Vapour Deposition. The results of long-term corrosion tests, as well as tests simulating postulated accidents, are presented. Zr-1%Nb alloy used as nuclear fuel cladding serves as a substrate and Cr, CrN, CrxNy layers are deposited by unbalanced magnetron sputtering and reactive magnetron sputtering. The deposition procedures are optimized in order to improve coating properties. Coated as well as reference uncoated samples were experimentally tested. The presented results include standard long-term corrosion tests at 360℃ in WWER water chemistry, burst (creep) tests and mainly single and double-sided high-temperature steam oxidation tests between 1000 and 1400℃ related to postulated Loss-of-coolant accident and Design extension conditions. Coated and reference samples were characterized pre- and post-testing using mechanical testing (microhardness, ring compression test), Thermal Evolved Gas Analysis analysis (hydrogen, oxygen concentration), optical microscopy, scanning electron microscopy (EDS, WDS, EBSD) and X-ray diffraction.

Low Temperature Recrystallization of Self-Implanted Amorphous Silicon Films (저온공정에 의한 자기이온주입된 비정질 실리콘 박막의 재결정화)

  • Lee, Man-Hyeong;Choe, Deok-Gyun;Kim, Jeong-Tae
    • Korean Journal of Materials Research
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    • v.2 no.6
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    • pp.417-427
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    • 1992
  • Silicon ion implantation was performed to LPCVD amorphous Si films and the low temperature annealing process followed with various conditions to find the optimal physical properties by studying recrystallization behavior. The uniformity of the recrystallized films was inspected by optical microscopy and for this purpose, new KOH: (IPA) : $H_2$O: $K_2$C${r_2}{O_7}$, etchant was developed. XRD and TEM results showed that the crystallites were grown as a form of dendrite with (111) preferred orientation, and the grain size was increased with dose concentration. The maximum grain size was obtained when the 3${\times}{10^{15}}$c$m^2$ implanted amorphous Si film was recrystallized at 55 $0^{\circ}C$for more than 40 hrs and at this condition the grain size was 3.2${\mu}$m.

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Analysis of EEG Reproducibility for Personal Authentication (개인인증을 위한 뇌파의 재현성에 대한 분석)

  • Jung, Yu-Ra;Jang, Yun-Seok
    • The Journal of the Korea institute of electronic communication sciences
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    • v.15 no.3
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    • pp.527-532
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    • 2020
  • In this paper, we presented the results of analysis through EEG measurement for the purpose of checking the frequency band of EEG signals that can be used for personal authentication. The measurement status was divided into the open-eye state and the closed-eye state depending on the presence or absence of an optical task. The data measured in the EEG experiments was divided into seven frequency bands : delta waves, theta waves, alpha waves, SMR waves, mid-beta waves, beta waves and gamma waves to identify the frequency band with the smallest power fluctuation over time. In our results, there was no significant difference between the open-eye state and the closed-eye state, and the SMR waves and mid-beta waves related to human concentration had the smallest fluctuation in power over time, and were a highly reproducible frequency band.

Antioxidant Activities of Functional Beverage Concentrates Containing Herbal Medicine Extracts

  • Park, Seon-Joo;Kim, Mi-Ok;Kim, Jung Hoan;Jeong, Sehyun;Kim, Min Hee;Yang, Su-Jin;Lee, Jongsung;Lee, Hae-Jeung
    • Preventive Nutrition and Food Science
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    • v.22 no.1
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    • pp.16-20
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    • 2017
  • This study investigated the antioxidant activity of functional beverage concentrates containing herbal medicine extracts (FBCH) using various antioxidant assays, such as 1,1-diphenyl-2-picrylhydrazyl (DPPH) radical scavenging activity, 2,2'-azino-bis(3-ethylbenzothiazoline-6-sulfonic acid (ABTS) radical scavenging activity, and reducing power assay. The total polyphenolic content of FBCH (81.45 mg/100 g) was higher than Ssanghwa tea (SHT, 37.56 mg/100 g). The antioxidant activities of FBCH showed 52.92% DPPH and 55.18% ABTS radical scavenging activities at 100 mg/mL, respectively. FBCH showed significantly higher antioxidant activities compared to the SHT (DPPH, 23.43%; ABTS, 22.21%; reducing power optical density; 0.23, P<0.05). In addition, intracellular reactive oxygen species generation significantly decreased in a concentration-dependent manner following FBCH treatment. These results suggest that the addition of herbal medicine extract contributes to the improved functionality of beverage concentrates.

The effect of cooling rate on the nuclei of OISF formation in Si single crystals (실리콘 단결정에서 산화적층결함의 핵생성에 미치는 냉각속도의 영향)

  • 하태석;김병국;김종관;윤종규
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.3
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    • pp.360-367
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    • 1996
  • The OISF (Oxidation Induced Stacking Fault)is expected to affect the electrical properties in Si single crystals, and the nuclei of OISF are believed to be formed during the crystal growing process. Initial oxygen concentration, dopant type and its density, and cooling rate are regareded as major factors on OISF formation. In this study, the variations of OISF density under various cooling rate were investigated. Si single crystal was heated to $1400^{\circ}C$ in Ar ambient and cooled down to room temperature at different cooling rate, using horizontal tube furnace. After that, they were oxidized at $1150^{\circ}C$, and then, OISF was observed with optical microscope. The relation between oxide procipitates and OISF nucleation was investigated by FTIR analysis. As a result, it was found that there exists the intermediate cooling rate range in which OISF nucleation is highly enhanced. And also, it was found that OISF nucleation is closely related with silicon oxide procipitation in Si single crystals.

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A Study on the High Quality and Low Cost Fabrication Technology of ZnO Thin Films for Solar Cell Applications (태양전지 응용을 위한 고품위 및 저가격 ZnO 박막 제조에 관한 연구)

  • Lee, Jae-Hyeong
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.1
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    • pp.191-196
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    • 2010
  • Aluminum doped zinc oxide (AZO) films have been prepared on Coming 7059 glass substrates by r.f. magnetron sputtering method. A powder target instead of a conventional sintered ceramic target was used in order to improve the utilization efficiency of the target and reduce the cost of the film deposition process. The influence of sputter pressure on the structural, electrical, and optical properties of AZO films were studied. The AZO films had hexagonal wurtzite structure with a preferred c-axis orientation, regardless of sputter pressure and target types. The crystallinity and degree of orientation was increased by increasing the sputter pressure. For higher sputtering pressures, a reduction of the resistivity was observed due to a increase on the mobility and the carrier concentration. The lowest resistivity of $6.5{\times}10^{-3}\;{\Omega}-cm$ and the average transmittance of 80% can be obtained for films deposited at 15 mTorr.

CaCO3 Biomineralization in Microfluidic Crystallizer (미세유체 결정화기를 이용한 탄산칼슘 Biomineralization)

  • Seo, Seung Woo;Ko, Kwan Young;Lee, Chang Soo;Kim, In Ho
    • Korean Chemical Engineering Research
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    • v.51 no.1
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    • pp.151-156
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    • 2013
  • Crystallization of $CaCO_3$ is practiced on a polymethylsiloxane (PDMS) - based microfluidic system. Liquid- liquid reaction was investigated by mixing calcium chloride ($CaCl_2$) and sodium carbonate ($Na_2CO_3$) solution to crystallize $CaCO_3$. Aspartic acid (Asp) was added to investigate the morphology change such as vaterite and calcite. Suitable ratio of $Na_2CO_3$ and $CaCl_2$ was searched for initial seed formation. Christmas tree model was used as microfluidic device to form concentration gradient of $Na_2CO_3$ and $CaCl_2$. After observing microfluidic channel by using optical microscope, we found that seeds of $CaCO_3$ were formed under the condition that the ratio of $Na_2CO_3$ and $CaCl_2$ was 2:1. Morphology of crystals were also observed as $CaCO_3$ crystals grow. When Asp was added, vaterite crystal was more frequently found in two morphologies (vaterite and calcite) and seed formation and crystal growth were inhibited.

The Effect of Boron Doped CdS Film on CdS/CdTe Solar Cell (CdS 박막의 boron doping에 따른 CdS/CdTe 태양전지 특성)

  • Lee, H.Y.;Lee, J.H.;Kim, J.H.;Park, Y.K.;Shin, J.H.;Shin, S.H.;Park, K.J.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1370-1372
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    • 1998
  • Boron doped CdS films were prepared by CBD(Chemical Bath Deposition) method using boric acid ($B_3HO_3$) as donor dopant source, and their properties were investigated. As-grown CdS films were highly adherent and specularly reflective. Boron doped CdS film which was fabricated under the condition of 0.01 $B_3HO_3/Cd(Ac)_2$ mole ratio, exhibited the lowest resistivity of $2{\Omega}cm$ and the highest optical bandgap of 2.41eV. Also, CdS/CdTe solar cells were fabricated with various doping concentration of CdS films. Using optimized CdS film as the window layer of CdS/CdTe solar cell, the characteristics of the cell were improved. ( $V_{oc}$=610mV, $J_{sc}$=37.5mA/cm, FF=0.4, $\eta$=9.1% )

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Refractive Index Control by Dopant for Thick Silica films Deposited by FHD (FHD법에 의해 증착된 실리카막의 도펀트 첨가에 의한 굴절률 제어)

  • 김용탁;서용곤;윤형도;임영민;윤대호
    • Journal of the Korean Ceramic Society
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    • v.40 no.6
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    • pp.589-593
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    • 2003
  • Silica based Planar Lightwave Circuits (PLC) have been applied to various kinds of wave-guided optical passive devices. SiO$_2$ (buffer) and GeO$_2$-SiO$_2$ (core) thick films have been deposited by Flame Hydrolysis Deposition (FHD). The SiO$_2$ films were produced by the flame hydrolysis reaction of halide materials such as SiCl$_4$, POCl$_3$ and BCl$_3$ into an oxy-hydrogen torch. The P concentration increased from 2.0 to 2.8 at% on increasing the POCl$_3$/BCl$_3$ flow ratio. The refractive index increased from 1.4584 to 1.4605 on increasing the POC1$_3$/BC1$_3$ flow ratio from 0.6 to 2.6. The refractive index of GeO$_2$-SiO$_2$ films was controlled by the GeCl$_4$ flow rate. The refractive index increased from 1.4615 to 1.4809 on increasing the GeCl$_4$ flow rate from 30 to 120 sccm.

The study of the characteristic of n-ZnO:In/p-Si(111) heterostructure using Pulsed Laser Deposition (PLD법으로 증착된 n-ZnO:In/p-Si(111) 이종접합구조의 특성연구)

  • Jang, B.L.;Lee, J.Y.;Lee, J.H.;Kim, J.J.;Kim, H.S.;Lee, D.W.;Lee, W.J.;Cho, H.K.;Lee, H.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.355-356
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    • 2008
  • In this work, ZnO films doped with different contents of Indium (0.1at.%, 0.3at.%, 0.6at.%, respectively) were deposited on Si (111) substrate that has 1~20 $\Omega$cm by pulsed laser deposition (PLD) at $600^{\circ}C$ for 30min. The thickness of the films are about 250 nm. The structural, optical and electrical properties of the films were investigated using X-ray Diffraction (XRD), Atomic force microscope (AFM), Photoluminescence (PL) and Hall measurement. It has been found that RMS of the films is decreased and grain size is increased with increasing the contents of doped Indium. The results of the Photoluminescence properties were indicated that the films have UV emission about 380nm and shows a little red shitf with increasing contents of doped indium. The result of the Hall measurement shows that the concentration and resisitivity in doped ZnO are as changing as one order, respectively ${\sim}10^{18}/cm^2$, ${\sim}10^{-2}cm{\Omega}cm$.

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