• Journal of Welding and Joining
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• v.34 no.2
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• pp.1-10
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• 2016

The use of materials for modern lightweight auto-bodies is becoming more complex than hitherto assemblies. The high strength materials nowadays frequently used for more specific fields such as the front and rear sub frames, seat belts and seats are mounted to the assembled body structure using bolt joints. It is desirable to use nuts attached to the assembled sheets by projection welding to decrease the number of loose parts which improves the quality. In this study, nut projection welding was carried out between a nut of both boron steel and carbon steel and ultra-high strength hot-stamped steel sheets. Then, the joints were characterized by optical and scanning electron microscope. The mechanical properties of the joints were evaluated by microhardness measurements and pullout tests. An indigenously designed sample fixture set-up was used for the pull-out tests to induce a tensile load in the weld. The fractography analysis revealed the dominant interfacial fracture between boron steel nut weld which is related to the shrinkage cavity and small size fusion zone. A non-interfacial fracture was observed in carbon steel nut weld, the lower hardness of HAZ caused the initiation of failure and allowed the pull-out failure which have higher in tensile strengths and superior weldability. Hence, the fracture load and failure mode characteristics can be considered as an indication of the weldability of materials in nut projection welding.

• Journal of the Mineralogical Society of Korea
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• v.23 no.3
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• pp.199-209
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• 2010

Coal gasification technology in the sector of domestic clean coal technologies is being into the limelight since recent dramatic rise of international oil price. In this study, we used a low rank coal from Inner Mongolia, China as a starting material for gasification. Various properties including optical, mineralogical, X-ray spectroscopic, X-ray diffraction, and drying property were measured and tested in order to estimate the suitability of the coal to gasification. The coal was identified as a brown coal of lignite group from the measurement of vitrinite reflectance. The coal has very low slagging and fouling potentials, and the ignition temperature is about $250^{\circ}C$. The major impurities consist of quartz, siderite, and clay minerals. Additionally, the coal had moisture content above 28%. Tests for finding effective drying method showed that the microwave drying is more effective than thermal drying.

• Journal of the Korean Applied Science and Technology
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• v.33 no.1
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• pp.67-74
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• 2016

The Prussian Blue Analogue(PBA) has three dimensional structure and the metal - organic framework material, and it has a variety configurations depending on the type of organic ligands. PBA has been receving an attention in the fields of biosensors, optical, catalytic, and hydrogen storage device. Also, it is an environmental friendly substance with a chemical stability. In addition, PBA is widely used in the filed of adsorption art since we can adjust the size of the fine pores. In this study, we synthesized $Mn_3[Fe(CN)_6]_2$, an organometallic framework chains by using a hydrothermal synthesis method. We used $K_4[Fe(CN)_6]$ and $MnCl_2$ as precursors. We also produced a manganese iron oxide, by baking the synthesized material. The effect of the size and shape of the particles was examined by controling pH of the precursor solution, the molar concentration of the precursor, and reaction time as the experimental variables. Synthesized absorbent was analyzed by XRD, SEM, FT-IR, UV-Vis, and TG / DTA to evaluate the adsorption properties of several dyes.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.1
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• pp.24-32
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• 2008

The ultimate purpose of the study is to develop a discomfort glare forecasting formula that can be practically used in Korea in order to effectively forecast discomfort glare considering the optical characteristics of the Koreans. The study was to examine the relations between discomfort glare and the variables such as luminance, background luminance, solid angle, luminous area and louver. To this end, experiments were conducted in a mock-up office that emulates the lighting environment of an ordinary office. The study was conducted by four steps as follow. First, previous studies on discomfort glare rating to define and rate discomfort glare were analyzed and modified to be applied to the experiments of this study. Second, experiment variables, variable scope, evaluation objects and evaluation points were determined after review on existing discomfort glare evaluation experimental formulas. Third, experiments were conducted in a mock-up office to be able to control variables. Finally, sensitivity of experiment variables were analyzed through examination of the relation between discomfort glare and the variables such as luminance, solid angle, louver, luminous area and subject's position. The result showed that the most influential variables on discomfort glare of an artificial light source is luminance and louver, luminous area and subject's position(solid angle) followed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• Journal of IKEEE
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• v.21 no.4
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• pp.368-374
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• 2017

In this Paper, we developed a low power type LED security light using LED lighting that substitutes a 220[V] commercial power source for a solar cell module instead of a halogen or a sodium lamp. in addition, a PWM type drive control circuit is designed to minimize the heat generation problem and the drive current of the LED drive controller. in developed system, The light efficiency measurement value is 93.6[lm/W], and a high precision temperature sensor is used inside the controller to control the heat generation of the LED lamp. In order to eliminate the high heat generated from the LED lamp, it is designed to disperse quickly into the atmosphere through the metal insertion type heat sink. The heat control range of LED lighting was $50-55[^{\circ}C]$. The luminous flux and the lighting speed of the LED security lamp were 0.5[s], and the beam diffusion angle of the LED lamp was about $110[^{\circ}C]$ by the light distribution curve based on the height of 6[m].

• Korean Journal of Optics and Photonics
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• v.25 no.4
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• pp.216-220
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• 2014

We have synthesized a $CaMgSi_2O_6:Eu^{2+}$ blue phosphor via a solid-state reaction method. The $CaMgSi_2O_6:Eu^{2+}$ phosphor has monoclinic structure with a space group of C2/c (15), and an emission band peaking at 450 nm (blue) due to the $4f^7-4f^65d$ transition of the $Eu^{2+}ion$. The emission intensity at $100^{\circ}C$ is 54% of the value at room temperature. A white LED was fabricated by integrating a UV LED (400 nm) with our blue phosphor plus two commercial green and red phosphors. The white LED shows a color temperature of 3500 K with a color rendering index of 87 (x = 0.3936, y = 0.3605), and a luminous efficiency of 18 lm/W. The white LED shows a luminance maintenance of 97% after operation at 350 mA for 400 hours at $85^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.217-223
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• 2010

We grew multi-stacked InAs/$In_{0.1}Ga_{0.9}As$ DWELL (dot-in-a-well) structure by metal organic chemical vapor deposition and investigated optical properties by photoluminescence and I-V characteristics by dark current measurement. When stacking InAs quantum dots (QDs) with same growth parameter, the size and density of QDs were changed, resulting in the bimodal emission peak. By decreasing the flow rate of TMIn, we achieved the uniform multi-stacked QD structure which had the single emission peak and high PL intensity. As the growth temperature of n-type GaAs top contact layer (TCL) is above $600^{\circ}C$, the PL intensity severely decreased and dark current level increased. At bias of 0.5 V, the activation energy for temperature dependence of dark current decreased from 106 meV to 48 meV with increasing the growth temperature of n-type GaAs TCL from 580 to $650^{\circ}C$. This suggest that the thermal escape of bounded electrons and non-radiative transition become dominant due to the thermal inter-diffusion at the interface between InAs QDs and $In_{0.1}Ga_{0.9}As$ well layer.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.184-189
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• 2010

Organic light-emitting diodes (OLEDs) with single emissive layer structures using two fluorescent dopants were fabricated and the device was composed of ITO / NPB ($700{\AA}$) / MADN : C545T - 1.0% : DCJTB - 0.3% ($300{\AA}$) / Bphen ($300{\AA}$) / LiF ($10{\AA}$) /Al ($1,000{\AA}$). C545T and DCJTB were functioned as green fluorescent dye and red fluorescent dye under MADN as host material. Concentrations of C545T and DCJTB was changed in emissive layer of MADN. Optimized OLED device using two fluorescence dopants shows emission efficiency of 8.42 cd/A and luminescence of 3169 cd/$m^2$at 6 V with CIE color coordinate, (0.43, 0.50). Electroluminescence of optimized OLED showed two peak at 500 and 564 nm according to C545T and DCJTB. These results indicate that F$\ddot{o}$ster energy transfer energy transfer was from MADN to C545T and rather than to DCJTB continuously.