• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.666-670
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• 2007

Aluminuim doped zinc oxide(ZnO:AL)Films have been prepared on Polyimide(PI) and Coming 7059 glass substrates by r.f. magnetron sputtering method. The structural of the ZnO:Al films were studied in accordance with various deposition R.F power and working pressure by XRD, SEM. And The electrical and optical properties of ZnO:Al films were characterized by Hall effect and UN visible spectrophotometer measurements, ZnO:Al films had were hexagonal wurtzite structure and dominant c-axis orientation. The R.f power and working pressure for optimum condition to fabricate the transparent conductive films using a PI substrate were 2 mTorr and 100W, respectively. The resistivity of the ZnO:Al films prepared under this condition were $9.6{\times}10^{-4}{\Omega}cm$. The optical transmittance of 400nm thick films at 550nm is ${\sim}85 %$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.101-102
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• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The un doped ZnO thin films were grown on c-$Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• Current Photovoltaic Research
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• 제8권1호
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• pp.33-38
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• 2020

Single-phased SnS thin films have been prepared by RF magnetron sputtering at various deposition pressures. The effect of deposition pressure on the structural and optical properties of polycrystalline SnS thin films was studied using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometer. The XRD analysis revealed the orthorhombic structure of the SnS thin films oriented along the (111) plane direction. As the deposition pressure was increased from 5 mTorr to 15 mTorr, the intensity of the peak on the (111) plane increased, and the intensity decreased under the condition of 20 mTorr. The binding energy difference at the Sn 3d_5/2 and S 2p_3/2 core levels was about 324.5 eV, indicating that the SnS thin film was prepared as a pure Sn-S phase. The optical properties of the SnS thin films indicate the presence of direct allowed transitions with corresponding energy band gap in the rang 1.47-1.57 eV.

• Bulletin of the Korean Chemical Society
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• 제32권11호
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• pp.4121-4124
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• 2011

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.423-423
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• 2007

In this study, the effects of annealing conditions on the structural and optical properties of ZnO films were investigated. ZnO oxide (ZnO) films were deposited onto $SiO_2$/Si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500{\sim}650^{\circ}C$ in the $O_2$ flow for 5 ~ 20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterized by SEM and XRD, respectively. The optical properties were evaluated by PL measurement at room temperature using a He-Cd 325 nm laser. According to the results, the optimal annealing conditions for the best photoluminescence (PL) characteristics were found to be oxygen fraction, ($O_2/O_2+Ar$) of 20%, RF power of 240W, substrate temperature of RT (room temperature), annealing condition of $600^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr. The obtained wavelength of light emission was found at 379 nm (ultraviolet-UV region). However, the optimal parameters for the best PL characteristics of ZnO thin films were not consistent with those obtained from the (002) intensities of XRD analyses. As a result, XRD pattern was not considered as the key issue concerning the intensity of PL of ZnO thin film. The intensity of the emitted UV light will correspond to the grain size of ZnO film.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1430-1431
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• 2011

To develope the transparent conducting oxide(TCO) films is one of the essential technologies to improve various properties of electro-optical devices such as dye-sensitized solar cells(DSCs). ITiO thin film is considered one of the candidates as TCO electrodes of DSCs because it shows many advantages such as the high transparency in long wavelength range above 700nm and excellent properties of electrical necking between nanoporous TiO2 and ITiO transparent electrode. This paper presents the effect of sputtering processes on the structural, electrical and optical properties of ITiO thin film deposited by r.f. magnetron sputtering. The effect of doping concentration of Ti on the chemical compounds and C axis-orientation properties of were mainly studied experimentally. The morphology and electrical properties were greatly influenced by deposition processes, especially by the doping concentration of Ti. The $3.8{\times}10^{-4}{\Omega}{\cdot}cm$ of minimum volume resistivity were obtained under the experimental conditions of gas pressure 7mTorr, substrate temperature $300^{\circ}C$, and 2.5% of Ti doping concentration.

• 한국자기학회지
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• 제2권1호
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• pp.61-68
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• 1992

전이 금속(Ni, Co), 희토류(Ce, Pr, Eu) 및 Al이온 치환 Ba 훼라이트박막을 스퍼터법으로 제조하여, 그 구조, 자기적 및 자기광학적 성질(1.0eV~3.2eV)을 조사하였다. 막 제작시의 투입 rf 전역 밀도를 조절하는 것에의해, 막 중의 결정립의 크기를 수 100 nm-수 nm로 제어하는데 성공했다. Fe를 Al으로 치환하는 것에의해 각형 히스테리시스 루우프를 얻는데 성공했다. Ni이온이 가시역에서 페러데이 회전을 크게 증가시키는 것을 발견했다. Co이온이 근적외선 영역에서 페러데이 회전을 크게 증가시키는것을 확인했다. Ce, Pr, Eu이온데 의한 페러데이 회전의 증가는 관찰되지 않았다. 이들 이온 치환 막의 자기적 및 자기광학적 성질의 기원에 대해 고찰했다.

• 한국재료학회지
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• 제26권6호
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• pp.347-352
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• 2016

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, $As^+$ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of $1.263{\times}10^{18}cm^{-3}$ were obtained when the dose of $5{\times}10^{14}$ As $ions/cm^2$ was implanted and the RTA was conducted at $850^{\circ}C$ for 1 min.

• 한국재료학회지
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• 제18권5호
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• pp.235-240
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• 2008

This paper presents results and observations obtained from a study of the optical and thermal properties of alkali tellurite depending on the composition. Fourier transform infrared (FT-IR) spectra showed evidence of chemical modification from $TeO_4$ trigonal bipyramids (tbp) to $TeO_3$ trigonal pyramids (tp) in tellurite glasses. The optical band gaps of the different glass samples calculated using Tauc's method were found to range from 3.5-3.8 eV. The glass transition temperature (Tg) and glass stability (${\Delta}T$) of alkali tellurite glasses were investigated, as $M_2O$ [M: Li, Na, K] amounted to 25 mol%, through the use of differential thermal analysis (DTA). The coefficient of thermal expansion (CTE) was measured in a thermo mechanical analysis (TMA) with a slow heating rate after the glass samples were annealed. The results confirm that the optical band gap of alkali tellurite glasses depends on the Te-O-Te structural relaxation related to the ratio of bridging/non bridging oxygen (BO/NBO). In contrast, the thermal properties are related to the ionic field strength of the Te-O-M and M-O-M bonds, and the Te-O-Te breakage depends on the ratio of BO/NBO.

• 한국펄프종이공학회:학술대회논문집
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• 한국펄프종이공학회 1999년도 Pre-symposium of the 10th ISWPC Recent Advances in Paper Science and Technology
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• pp.309-314
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• 1999

With a view to seek the influence of hollow sphere pigments of latex upon the printed color on coated paper surface, the hollow sphere pigments were compared with filled ones in a variety of experimental approaches. Colloidal properties of latices were determined by measuring zeta potential and particle size distribution. For the amphoteric filled sphere pigment of latex, the polarity was reversed from the negative side to the positive side with decreasing pH. An extraordinarily high peak in the particle size distribution of the amphoteric filled evidenced aggregation between latex particles near the isoelectric point, depending on the electrolyte concentration and pH of the suspending medium. Coated papers containing the hollow sphere pigment in their coating improved optical properties like gloss and brightness. Optical parameters solely of the coating could account for this finding. An equation derived from the Kubelka-Munk equation calculated them fro twice measurements of reflectance of a coated paper over two substrates of different reflectances. This method permitted to predict brightness of coated paper of which coat weight would be different fro the actual one. The colorimetric parameters of solid-printed surfaces of the coated papers closely related to optical and structural properties of the coated papers. The color of the printed surfaces was dominated by the brightness and the smoothness of the coated papers. The hollow sphere pigments were proved to improve optical properties of coated paper and to control minutely colorimetric parameters of printed surfaces.