• Korean Journal of Materials Research
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• v.15 no.10
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• pp.657-661
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• 2005

[ $ZnHgGa_4Se_8\;and\;ZnHgGa_4Se_8::Co^{2+}$ ] single crystals were grown by the Bridgman-Stockbarger method. The single crystals crystallized into a defect chalcopyrite structure. The optical energy band gap of the single crystals was investigated in the temperature range 11-300K. The optical energy band gap of the $ZnHgGa_4Se_8:Co^{2+}$ single crystal was smaller than that of the $ZnHgGa_4Se_8$ single crystal. The temperature dependence of the optical energy band gap of the single crystals was well fitted by the Varshni equqtion. The impurity optical absorption spectrum of the $ZnHgGa_4Se_8:Co^{2+}$ single crystal was measured in the wavelength region 300-2300 m at 80 K. Impurity absorption peaks in the spectrum were analyzed within the framework of the crystal field theory and were attributed to the electron transitions between the energy levels of $Co^{2+}$ sited in the Td symmetry point.

• Journal of Sensor Science and Technology
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• v.3 no.3
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• pp.36-44
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• 1994

A fiber-optic temperature sensor utilizing InP as a sensing medium was implemented and tested to determine the dependance of the optical characteristics of InP on physical parameters for the use as design parameters in this type of sensors. The optical absorption coefficient of InP has been determined through the experimental measurement of the fundamental optical absorption characteristics at various temperature points. The transmission characteristics of light source at three temperature points($249^{\circ}K$, $298^{\circ}K$, $369^{\circ}K$) are computed from the optical absorption coefficient for a fixed length of InP. A series of measurement concluded that optical absorption edge moves to longer wavelength region at a speed of 0.42 nm / $^{\circ}K$ as the specimen gets hotter, and that increasing the thickness of the InP sensing layer shifts power density curve to lower temperature region.

• Journal of the Optical Society of Korea
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• v.8 no.2
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• pp.55-58
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• 2004

Several internal wavelength locker schemes for 10 Gbps electro-absorption modulated laser EML) module were reviewed. 10 Gbps EML modules with simple and robust internal wavelength ockers for metro dense WDM application were successfully demonstrated. The wavelength aging ver 2000 hours was done at elevated temperature of 7$0^{\circ}C$. The average wavelength drift of 10 modules was measured to be about $\pm$ 5 pm. These modules can be successfully applied to the 0 Gbps DWDM systems with 50 ㎓ channel spacing.

• Bulletin of the Korean Chemical Society
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• v.18 no.8
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• pp.886-889
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• 1997

The crystal structure and optical properties of copper nanoparticles, prepared in fused silica by ion-implantation and subsequent heat-treatment, were characterized by X-ray, TEM, linear absorption, and degenerate four-wave mixing (DFWM) technique. The X-ray data show fcc lattice structure of the nanocrystals and their size was measured as 8-20 nanometer by high resolution TEM. Using DFWM, the third-order nonlinear optical coefficient of the Cu-SiO2 thin films was measured as 0.4-1.1×10-8 esu in the surface plasmon resonance absorption region (540-570 nm).

• Journal of the Optical Society of Korea
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• v.15 no.3
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• pp.227-231
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• 2011

An external optical modulation using absorption s in a Fabry-Perot laser diode (FP-LD), has been proposed and experimentally demonstrated for multicasting in a WDM-PON. The center wavelengths of absorption s in an FP-LD move to short-wavelength rapidly by only a small current (~1 mA) injection. If the current injection is stopped, the s move back to the original position. Such a movement of the s can make the FP-LD act as an external optical modulator, which is found to modulate at a maximum modulation speed of 800 Mbps or more. For a multicasting transmitter in a WDM-PON, the proposed modulator can be cost-effectively applied to a multi-wavelength laser source with the same periodicity of the longitudinal mode. Instead of the multi-wavelength laser source, tunable-LDs are used for experiments. The 32 channel multicasting system with the proposed modulator has been demonstrated, showing power penalties of 1.53~4.15 dB at a bit error rate of $10^{-9}$ with extinction ratios better than 14.5 dB at 622 Mbps.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.172-176
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• 1990

A high resolution picosecond absorption kinetic spectrometer utilizing dye emission and a streak camera is presented and compared with other methods of picosecond transient absorption measurements. Typical transient absorption and bleach recovery kinetics measured with this spectrometer are shown. Single wavelength transient absorption or ground state bleach recovery kinetics are determined on the basis of a single laser shot, so that the samples are relatively free frm decomposition by irradiation. Excellent kinetics may be obtained from the near UV to the near IR and are not subject to interference from luminescence of samples. The sensitivity of this spectrometer is very high and it is reasonably easy and convenient to set up and use.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.360-360
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• 2012

Graphene shows diverse novel physical properties arising from its peculiar electronic states, so called Dirac electrons. Especially, effect of magnetic field is very unique, exhibiting exotic Landau level (LL) splitting. LLs are substantially modified by spins of Dirac electrons and pseudo-spins. The degeneracy of LLs is lifted to show splitting by electron-electron interaction and by the Zeeman effect. We investigated the magneto-optical absorption of graphene subjected to ultra-high magnetic field. Samples were prepared by the CVD method deposited on GaAs and Quart substrate. We have confirmed existence of graphene on each substrate by the micro-Raman spectroscopy. Next, we conducted magneto-absorption measurements in magnetic field up to 120 T by the single-turn coil (STC) method. We could observe absorption peak at 65 T and 100 T, respectively, probably arising from the LL inter-band transitions.

• Journal of the Optical Society of Korea
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• v.1 no.1
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• pp.15-18
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• 1997

Intensity dependent dynamics of photoinduced absorption in $CdS_{0.4}$/$Se_{0.6}$ semiconductor doped glasses below the band gap was investigated by using time-resolved differential transmittance spectroscopy. The carriers populated through ultrafast trapping at semiconductor-glass interfaces give rise to a broad photoinduced absorption below the band gap. The decay time of transient absorption depends strongly on the excitation intensity. Based on our results, the physical mechanism for photoinduced absorption processes was suggested.

• Journal of the Optical Society of Korea
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• v.19 no.6
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• pp.665-672
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• 2015

We demonstrate an ultrathin metamaterial for polarization independent perfect absorption as well as a band-pass filter (BPF) which works at a higher frequency band compared to the perfect absorption band. The planar metamaterial is comprised of three layers, symmetric split ring resonators (SSRRs) at the front and structured ground plane (SGP) at the back separated by a dielectric layer. The perfect metamaterial absorber (MA) can realize near 100% absorption due to high electromagnetic losses from the electric and/or magnetic resonances within a certain frequency band. The thickness of the structure is only 1/28 of the maximum absorption wavelength.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1729-1734
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• 2018

Organic-inorganic halide perovskite single crystals undergo phase transition of being cubic, tetragonal, or orthorhombic depending on the temperature. We investigated the $CH_3NH_3PbBr_{3-x}I_x$ single crystals grown by the inverse temperature crystallization method with temperature-dependent UV-Vis absorption and photoluminescence. From the temperature-dependent absorption measurement, the optical band gap is extracted by derivation of absorption spectrum fitting and Tauc plot. In our results, $CH_3NH_3PbBr_{3-x}I_x$ single crystals show that an abrupt change in optical band gap, PL peak position and intensity appears around 120 K - 170 K regions, indicating the phase transition temperature.