• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.10
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• pp.59-66
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• 2003

We propose the novel optical burst switching scheme to guarantee a minimum bandwidth for multiple classes. To date, QoS studies on OBS network are capable of differentiating two classes, but have difficulties in providing a minimum bandwidth lot several classes because of lower classes' collision with the highest class bursts in the networks. To solve that problem, in our proposed scheme we assign time zones in a data channel for each class periodically, making one burst have top priority at least its zone. Also, the new burst assembling algorithm, as well as the way of managing data channel, is necessarily proposed to coordinate with the proposed OBS scheme. Through the evaluation, we show that the worst-case end-to-end delay is small enough and the received bandwidth of the lower classes is still assured regardless of the traffic load of the highest class.

• Journal of the Optical Society of Korea
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• v.18 no.5
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• pp.582-588
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• 2014

We study polarization-dependent spontaneous emission (SE) rate and light extraction efficiency (LEE) in localized-surface-plasmon (LSP)-coupled light emitting diodes (LEDs). The closely packed seven $Ag/SiO_2$ core-shell (CS) nanoparticles (NPs) lie on top of the GaN surface for LSP coupling with a radiated dipole. According to the dipole direction, both the SE rate and the LEE are significantly modified by the LSP effect at the $Ag/SiO_2$ CS NPs when the size of Ag, the thickness of $SiO_2$, and the position of the dipole source are varied. The enhancement of the SE rate is related to an induced dipole effect at the Ag, and the high LEE is caused by light scattering with an LSP mode at $Ag/SiO_2$ CS NPs. We suggest the optimum position of the quantum well (QW) in blue InGaN/GaN LEDs with $Ag/SiO_2$ CS NPs for practical application.

• Journal of Sensor Science and Technology
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• v.19 no.6
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• pp.428-434
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• 2010

In this study, a novel gas sensor based on evanescent field coupling between single mode side polished fiber and solvatochromic dye dispersed polymer waveguide was demonstrated. We fabricated a side polished optical fiber device as a volatile organic compounds gas detector. Solvatochromic dye was coated on the top of the side polished optical fiber to take advantage of evanescent field coupling. The solvatochromism can be defined as the phenomenon whereby a compound changes color, either by a change in the absorption or emission spectra of molecule, when reacted in different VOCs. The device reacted to polarity gases like a hexane, butane, xylene etc. The resonance wavelength was shifted by the xylene concentration which range was 0.1 ppm ~ 100 ppm. Also, the response with the concentration was lineer and the detection limit was 0.1 ppb.

• Korean Journal of Materials Research
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• v.29 no.1
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• pp.59-64
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• 2019

This study investigates the optical characteristics of InGaN multiple quantum wells(MQWs) light emitting diodes(LEDs) on planar sapphire substrates(PSSs), nano-sized PSS(NPSS) and micro-sized PSS(MPSS). We obtain the results as the patterning size of the sapphire substrates approach the nanometer scale: The light from the back side of the device increases and the total light extraction becomes larger than the MPSS- and planar-LEDs. The experiment is conducted by Monte Carlo ray-tracing, which is regarded as one of the most suitable ways to simulate light propagation in LEDs. The results show fine consistency between simulation and measurement of the samples with different sized patterned substrates. Notably, light from the back side becomes larger in the NPSS LEDs. We strongly propose that the increase in the light intensity of NPSS LEDs is due to an abnormal optical distribution, which indicates an increase of extraction probability through NPSS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.299-300
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• 2009

We have studied an organic layer and semitransparent Al cathode thickness dependent optical properties for top-emission organic light-emitting diodes. Device structure is ITO(170nm)/TPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/Al(100nm) and Al(100nm)/TPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/Al(25nm). While a thickness of total, organic layer was varied from 85nm to 165nm, a ratio of those two layers was kept to be about 2:3. Then it was compared with that of bottom devices. And a thickness of semitransparent Al cathode was varied from 20nm to 30nm for the device with an organic layer thickness of 140nm. We were able to control the emission spectra from the top-emission organic light-emitting diodes.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.46 no.3
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• pp.73-80
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• 2014

In this study, in order to investigate the influence of insolubilizer on the double coating structure, we carried out basic research related to the double coating formulation with four insolubilizers having various chemical types such as amino aldehyde, glyoxal and two metallic salts. It was found that although the four insolubilizers showed similar results on optical and surface properties of the coated papers, they gave different results in the printabilities of the coated papers since coating structure was significantly influenced by different reacting mechanism of the insolubilizers. Three of the insolubilizers (glyoxal, two metallic salts) showed better results than amino aldehyde type one when they were applied to top coating formulation. Metallic salts type insolubilizers showed good results in the print gloss when it was applied to top coating formulation. It was believed that amino aldehyde type insolubilizer applied top coating formulation showed good both of dry-pick and wet-pick strength.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.91-94
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• 2022

Top emission organic light-emitting diode is commonly used because of high efficiency and good color purity than bottom - emission organic light-emitting device. Unlike BEOLED, TEOLED contain semi-transparent metal cathode. Because of semi-transparent cathode, micro cavity effect occurs in TEOLED. We optimized this effect by changing the thickness of hole injection layer. Device consists of is indium-tin-oxide / N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine (x nm) / tris-(8-hydroxyquinoline) aluminum (50nm) / LiF(0.5nm) / Mg:Ag (1:9), and we changed NPB thickness which is used as HTL in our device in order to study how micro cavity effects are changed by optical path. As the results, NPB thickness at 35nm showed the current efficiency of 8.55Cd/A.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1271-1276
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• 2007

The most powerful analytical equipment usually comes at the cost of having the highest demand for space. Where electron microscopes has traditionally required a room to themselves, not just for reasons of their size but because of ancillary demands for pipes and service. The simple optical microscopes, of course, can occupy the desk-top, but because their performance is limited by the wavelength of light, their powers of magnification and resolution are inferior to that of the electron microscope. Mini SEM will sit comfortably on a desk-top but offers magnification and resolution performances much closer to that of a standard SEM. This new technique extends the scope of SEM as a high-resolution microscope, relatively cheap and widely available imaging tool, for a wider variety of samples.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1034-1040
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• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. Grain boundaries acted as potential barriers as well as recombination centers for the photo-generated carriers. To reduce these effects of the grain boundaries we investigated various influencing factors such as emitter thickness thermal treatment preferential chemical etching of grain boundaries grid design contact metal and top metallization along boundaries. Pretreatment in $N_2$atmosphere and gettering by POCl$_3$and Al were performed to obtain multicrystalline silicon of the reduced defect density. Structural electrical and optical properties of slar cells were characterized before and after each fabrication process. Improved conversion efficiencies of solar cell were obtained by a combination of pretreatment above 90$0^{\circ}C$ emitter layer of 0.43${\mu}{\textrm}{m}$ Al diffusion in to grain boundaries on rear side fine grid finger top Yb metal and buried contact metallization along grain boundaries.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1430-1432
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• 1997

A solar cell conversion effiency was degraded by grain boundary effect in polycrystalline silicon. To reduce these effects of the grain boundaries, we investigated various influencing factors such as preferential chemical etching of grain boundaries, grid design, transparent conductive thin film, and top metallization along grain boundaries. Pretreatment in $N_2$ atmosphere and gettering by $POCl_3$ and Al were performed to obtain polycrystalline silicon of the reduced defect density. Structural, electrical, and optical properties of solar cells were characterized. Improved conversion efficiencies of solar cell were obtained by a combination of Al diffusion into grain boundaries on rear side, fine grid finger, top Yb metal grid on Cr thin film of $200{\AA}$ and buried contact metallization along grain boundaries.