• 제목/요약/키워드: Optical Top

검색결과 380건 처리시간 0.04초

냉중성자 삼축분광장치의 차폐능 최적화 설계 및 선량 측정 (Shielding Design Optimization of the HANARO Cold Neutron Triple-Axis Spectrometer and Radiation Dose Measurement)

  • 류지명;홍광표;박승일;최영현;이기홍
    • Journal of Radiation Protection and Research
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    • 제39권1호
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    • pp.21-29
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    • 2014
  • 삼축분광장치는 물질을 이루고 있는 자성 원소들의 거동, 즉 스핀 동역학을 측정하는데 적합한 장치로, 연구용 원자로 '하나로'에는 국내 유일의 냉중성자 삼축분광장치가 최근 설치되었다. 삼축분광장치는 중성자 빔을 제어하는 중성자광학 부품과 중성자 빔으로 인해 발생하는 방사선에 대한 차폐체로 이루어지며 이러한 부품은 수십 톤 중량의 기계구조물을 이룬다. 방사선 차폐는 중성자 빔 경로 이외의 방향으로 진행하는 중성자와 감마선을 효과적으로 막아 신호대 잡음비를 향상시키는 역할을 하며 구조물 내부의 방사화된 부품으로부터 발생하는 감마선을 차폐하여 장치 이용자의 피폭선량을 최소화한다. 그런데 설치된 냉중성자 삼축분광장치의 차폐체 중 전면부의 고하중으로 인해 장치 운영상 여러 가지 문제점이 발생, 전면 세그먼트 차폐체의 하중을 줄이는 구조개선이 불가피하였다. 이에 MCNPX 모의계산을 통해 냉중성자 삼축분광장치의 차폐체 최적화에 필요한 개선방향을 검토하였다. 상부 차폐체의 폴리에틸렌과 납의 추가 설치를 통해 전면 블록 차폐체 하중을 줄일 수 있는 최적 길이를 확인하였다. 그 결과, 전면 블록 차폐체의 높이 20%가 제거된 경우, 구조변경 전 대비 차폐체 상부에서 70% 수준의 감마선속이 나타남을 확인하였다. 하지만 높이를 줄일수록 전면 블록 차폐체의 하중을 줄일 수 있기 때문에, 차폐블록을 추가 제거하고 이에 대한 차폐능을 보상해 줄 방안으로 상부 납 차폐체의 위치 변화에 따른 중성자속과 감마선속을 예측해 보았다. 전면 블록 차폐체 높이의 35% 제거하고 상부 납 차폐체를 최하단부에서 10 cm에 설치한 경우, 전면 블록 차폐체 상부에서 감마선속이 각각 25%, 18% 증가하였다. 증가한 감마선속의 영향을 파악하기 위해 MCNPX 모의계산을 통해 공간의 감마선속 분포를 가시화하였다. 증가한 감마선속은 상부로 향하는 방향성을 띄며 이동하면서 소멸하여 검출기에 이르기 전에 낮아져 검출기와 실험자의 위치에 영향을 끼칠 수 없다고 판단하였다. 그래서 중성자속 및 감마선속과 고하중 문제를 동시에 해결할 수 있는 최적화 조건으로 차폐체 높이가 35% 제거되고 상부 납 차폐체가 10 cm 위치에 있는 경우를 선정하였다. 이 결과를 바탕으로 구조개선 작업을 실시하였으며 열형광선량계를 이용하여 콘크리트 차폐블록 외부에서 중성자와 감마선량을 측정하였다. 측정된 중성자 선량은 0.21 ${\mu}Svhr^{-1}$, 감마선량은 3.69 ${\mu}Svhr^{-1}$로 설계기준을 만족하였으며 피폭으로부터 실험자의 안전성을 확인하였다.

형광체 기반 X선 광 변조기를 위한 비정질 셀레늄 필름 특성 (Characterization of the a-Se Film for Phosphor based X-ray light Modulator)

  • 강상식;박지군;조성호;차병열;신정욱;이건환;문치웅;남상희
    • 대한의용생체공학회:의공학회지
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    • 제28권2호
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    • pp.306-309
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    • 2007
  • PXLM(Phosphor based x-ray light modulator) has a combined structure by phosphor, photoconductor, and liquid crystal and it can realize x-ray image of high resolution in clinical diagnosis area. In this study, we fabricated a photoconductor and investigated electrical and optical properties to confirm application possibility of radiator detector of PXLM structure. As photoconductor, amorphous selenium(a-Se), which is used most in DR(Digital radiography) of direct conversion method, was used and for formation of thin film, it was formed as $20{\mu}m-thick$ by using thermal vacuum evaporation system. For a produced a-Se film, through XRD(X-ray diffraction) and SEM(Scanning electron microscope), we investigated that amorphous structure was uniformly established and through optical measurement, for visible light of 40 $0\sim630nm$, it had absorption efficiency of 95 % and more. After fabricated a-Se film on the top of ITP substrate, hybrid structure was manufactured through forming $Gd_2O_3:Eu$ phosphor of $270{\mu}m-thick$ on the bottom of the substrate. As the result to confirm electrical property of the manufactured hybrid structure, in the case of appling $10V/{\mu}m$, leakage current of $2.5nA/cm^2$ and x-ray sensitivity of $7.31nC/cm^2/mR$ were investigated. Finally, we manufactured PXLM structure combined with hybrid structure and liquid crystal cell of TN(Twisted nematic) mode and then, investigated T-V(Transmission vs. voltage) curve of external light source for induced x-ray energy. PXLM structure showed a similar optical response with T-V curve that common TN mode liquid crystal cell showed according to electric field increase and in appling $50\sim100V$, it showed linear transmission efficiency of $12\sim18%$. This result suggested an application possibility of PXLM structure as radiation detector.

Characteristics of InGaAs/GaAs/AlGaAs Double Barrier Quantum Well Infrared Photodetectors

  • 박민수;김호성;양현덕;송진동;김상혁;윤예슬;최원준
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.324-325
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    • 2014
  • Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

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구름과 에어로솔의 혼재시 에어로솔의 광학특성이 상향 단파 복사에 미치는 영향 (Effects of Aerosol Optical Properties on Upward Shortwave Flux in the Presence of Aerosol and Cloud layers)

  • 이권호
    • 대한원격탐사학회지
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    • 제33권3호
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    • pp.301-311
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    • 2017
  • 에어로솔의 광학특성과 연직고도는 태양 복사의 반사와 흡수과정을 통하여 지구복사수지에 영향을 미치게 된다. 본 연구에서는 복사전달모델과 위성관측자료를 이용하여 동북아시아 지역에서 구름의 존재 시 에어로솔 층에 의한 복사특성을 분석하였다. 복사전달 모의 결과는 구름이 하부에 존재하는 경우에 에어로솔 층의 고도가 높아짐에 따라 대기 온난화 효과가 증가하였다. 이러한 관계는 에어로솔의 광 흡수성이 커질수록, 지표 반사도가 증가할수록 비례하는 경향을 나타내었다. 그리고 연구대상지역 ($20-50^{\circ}N$, $110-140^{\circ}E$)에서 주요 에어로솔 이벤트 사례에 대하여, UV Absorbing Aerosol Index (AAI) derived from Total Ozone Mapping Spectrometer (TOMS), cloud parameters derived from the Moderate Resolution Imaging Spectro-radiometer (MODIS), with Upward Shortwave Flux (USF) Clouds and the Earth's Radiant Energy System (CERES) 위성관측자료를 이용하여 광 흡수성 에어로솔에 의한 영향을 정량적으로 분석하였다. 각 사례에 대한 평균적인 복사효과는 약 6 - 26 %에 해당하는 상향 단파 복사량의 감쇄효과가 나타났다. 이러한 결과는 에어로솔에 의한 직접효과와 간접효과를 정량화 하기 위한 중요성을 설명해 준다.

Modern Paper Quality Control

  • Olavi Komppa
    • 한국펄프종이공학회:학술대회논문집
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    • 한국펄프종이공학회 2000년도 제26회 펄프종이기술 국제세미나
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    • pp.16-23
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    • 2000
  • The increasing functional needs of top-quality printing papers and packaging paperboards, and especially the rapid developments in electronic printing processes and various computer printers during past few years, set new targets and requirements for modern paper quality. Most of these paper grades of today have relatively high filler content, are moderately or heavily calendered , and have many coating layers for the best appearance and performance. In practice, this means that many of the traditional quality assurance methods, mostly designed to measure papers made of pure. native pulp only, can not reliably (or at all) be used to analyze or rank the quality of modern papers. Hence, introduction of new measurement techniques is necessary to assure and further develop the paper quality today and in the future. Paper formation , i.e. small scale (millimeter scale) variation of basis weight, is the most important quality parameter of paper-making due to its influence on practically all the other quality properties of paper. The ideal paper would be completely uniform so that the basis weight of each small point (area) measured would be the same. In practice, of course, this is not possible because there always exists relatively large local variations in paper. However, these small scale basis weight variations are the major reason for many other quality problems, including calender blacking uneven coating result, uneven printing result, etc. The traditionally used visual inspection or optical measurement of the paper does not give us a reliable understanding of the material variations in the paper because in modern paper making process the optical behavior of paper is strongly affected by using e.g. fillers, dye or coating colors. Futhermore, the opacity (optical density) of the paper is changed at different process stages like wet pressing and calendering. The greatest advantage of using beta transmission method to measure paper formation is that it can be very reliably calibrated to measure true basis weight variation of all kinds of paper and board, independently on sample basis weight or paper grade. This gives us the possibility to measure, compare and judge papers made of different raw materials, different color, or even to measure heavily calendered, coated or printed papers. Scientific research of paper physics has shown that the orientation of the top layer (paper surface) fibers of the sheet paly the key role in paper curling and cockling , causing the typical practical problems (paper jam) with modern fax and copy machines, electronic printing , etc. On the other hand, the fiber orientation at the surface and middle layer of the sheet controls the bending stiffness of paperboard . Therefore, a reliable measurement of paper surface fiber orientation gives us a magnificent tool to investigate and predict paper curling and coclking tendency, and provides the necessary information to finetune, the manufacturing process for optimum quality. many papers, especially heavily calendered and coated grades, do resist liquid and gas penetration very much, bing beyond the measurement range of the traditional instruments or resulting invonveniently long measuring time per sample . The increased surface hardness and use of filler minerals and mechanical pulp make a reliable, nonleaking sample contact to the measurement head a challenge of its own. Paper surface coating causes, as expected, a layer which has completely different permeability characteristics compared to the other layer of the sheet. The latest developments in sensor technologies have made it possible to reliably measure gas flow in well controlled conditions, allowing us to investigate the gas penetration of open structures, such as cigarette paper, tissue or sack paper, and in the low permeability range analyze even fully greaseproof papers, silicon papers, heavily coated papers and boards or even detect defects in barrier coatings ! Even nitrogen or helium may be used as the gas, giving us completely new possibilities to rank the products or to find correlation to critical process or converting parameters. All the modern paper machines include many on-line measuring instruments which are used to give the necessary information for automatic process control systems. hence, the reliability of this information obtained from different sensors is vital for good optimizing and process stability. If any of these on-line sensors do not operate perfectly ass planned (having even small measurement error or malfunction ), the process control will set the machine to operate away from the optimum , resulting loss of profit or eventual problems in quality or runnability. To assure optimum operation of the paper machines, a novel quality assurance policy for the on-line measurements has been developed, including control procedures utilizing traceable, accredited standards for the best reliability and performance.

Fabrication of Schottky Device Using Lead Sulfide Colloidal Quantum Dot

  • Kim, Jun-Kwan;Song, Jung-Hoon;An, Hye-Jin;Choi, Hye-Kyoung;Jeong, So-Hee
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.189-189
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    • 2012
  • Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

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CdSe 나노입자 형광층 구조에 따른 백색 LED 발광 특성 연구 (Luminescence Properties of White LED with Different CdSe nanoparticles Phosphor Layer)

  • 정원근;유홍정;박선희;전병희;김성현
    • Korean Chemical Engineering Research
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    • 제49권3호
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    • pp.320-324
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    • 2011
  • TOPO/TOP로 안정화된 CdSe 반도체 발광 나노입자를 용해열 방법을 이용하여 합성하였다. 합성 온도 및 시간 조절을 통하여 540 nm 녹색 발광과 620 nm 적색발광 CdSe 나노입자를 얻었다. 형광체 변환 백색 발광다이오드(LED)는 460 nm 발광 InGaN 발광다이오드(LED) 여기원(excitation)과 540, 620 nm 발광 CdSe 나노입자 형광체를 결합하여 제작하였다. CdSe 나노입자 형광층은 녹색과 적색이 혼합된 단층과 분리된 다층구조로 이루어졌으며, 형광층 구성에 따른 백색 LED 소자의 특성 차이를 비교하였다. 단층구조 백색 LED는 20 mA에서 5.78 lm/W의 효율을 가지며, 형광층 내에서의 에너지 전이로 인하여 적색광이 강한(0.36, 0.45)의 색좌표를 보였다. 반면 다층 구조 백색광 LED는 20 mA에서 7.28 lm/W의 효율과 순수 백색광 영역인(0.32, 0.34)의 색좌표를 나타냈다. 또한, 400 nm의 청자색 LED를 여기원으로 적용 시, 소자의 효율이 8.76 lm/W로 증가하였다.

위성센서 대리 검보정을 위한 소노란 사막의 복사 가변성 연구 (Study on Radiometric Variability of the Sonoran Desert for Vicarious Calibration of Satellite Sensors)

  • 김원국;이상훈
    • 대한원격탐사학회지
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    • 제29권2호
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    • pp.209-218
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    • 2013
  • 북미 지역에 위치한 소노란 사막은 많은 위성 광학 센서의 대리 검보정에 이용되어왔다. 소노란 사막은 대리 검보정에 적합한 조건들, 즉 높은 반사율, 적은 식생, 비교적 넓은 면적, 적은 강우량 등을 가지고 있지만, 고도가 낮고 바다에 근접해 있어 대기의 수증기량에 계절적 변화가 크다는 단점이 있다. 대기 상층의 반사율(Top-Of-Atmosphere reflectance, TOA reflectance)만을 이용하여 센서의 감퇴(sensor degradation)를 추정하는 대리 검보정 방법의 경우, 이러한 대기 가변성은 대리 검보정의 정밀도를 떨어뜨리는 결과를 가져온다. 이 논문에서는 12년간에 걸쳐 수집된 Landsat 5 영상을 이용해 소노란 사막 지역 내에서 복사도의 가변성이 가장 작은 위치를 찾아내고, TOA 반사율 가변성의 또 다른 원인인 양방향 반사분포함수(Bidirectional reflectance distribution function, BRDF)를 규명하여 그에 대한 보정을 시도하였다. 실험의 결과, 소노란 사막의 중서부가 가시광선과 근적외선 밴드에 대해 고루 낮은 가변성을 가지는 지역임이 밝혀졌고, BRDF 모델을 통하여 태양-타겟-센서 간의 위치변화로 말미암은 가변성을 고려한 결과, 가시광선 밴드들의 경우 그 BRDF 효과가 상당히 감소하였지만, 근적외선 밴드들의 경우 대기 가변성으로 인해 BRDF 효과가 많이 제거되지 못하였음을 관찰하였다.

Electrical Characteristic of IGZO Oxide TFTs with 3 Layer Gate Insulator

  • Lim, Sang Chul;Koo, Jae Bon;Park, Chan Woo;Jung, Soon-Won;Na, Bock Soon;Lee, Sang Seok;Cho, Kyoung Ik;Chu, Hye Yong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.344-344
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    • 2014
  • Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

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고가(高架)구조물의 정위치 시공을 위한 준스태틱RTK 측위의 적용성 실험 (Availability Evaluation of Quasi Static RTK Positioning for Construction of High Rise Buildings and Civil Structures)

  • 김인섭
    • 대한공간정보학회지
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    • 제19권4호
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    • pp.119-126
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    • 2011
  • 초고층 건물이나 고가 구조물 상부의 정위치 측설에 주로 사용되어 왔던 광학식 TS장비는 시준선 확보의 어려움, 장거리 관측에 따른 오차의 증가 및 동적관측의 어려움 등으로 인하여 사용성이 많이 떨어지므로 최근에는 GPS를 이용한 측량방법이 제시되고 있다. 그러나 기존의 GPS측량방법들은 대부분 후처리 방법으로서 측설, 검측, 위치조정 및 확인측량 등 일련의 과정에서 시간이 과다 소요되는 문제점이 있다. 따라서 본 논문에서는 RTK측위 기법을 적용하여 실시간으로 구조물의 위치를 검측하고 조정함으로써 측량으로 인한 공사의 중단을 최소화 하고, 준스태틱 RTK기법에 의한 고정밀의 측정값을 기반으로 망조정을 통해 수 mm 이내의 높은 정확도로 시공좌표를 결정함으로써 공정관리와 품질관리를 모두 충족시킬 수 있는 방법에 대해 실험 하였다. 실험결과 130m 이상 높이의 고가 구조물 상층부에서 사변망을 이루는 4점의 준스태틱 RTK 관측점을 최소제곱법으로 망조정 하면 약 2mm 내외의 정확도로 구조물 측설이 가능하므로 향후 초고층 건물이나 고가 교량등의 시공측량에 널리 적용될 수 있을 것으로 사료된다.