• 전자공학회논문지A
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• 제33A권2호
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• pp.87-95
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• 1996

We have studied the effects of La concentration on the optical and electrical properties of lead lanthanum titanate (PLT) thin films by using sol-gel method. Both the optical and electrical properties are greatly affected by the La concentration. The refreactiv eindices of the films varied from 2.23 to 1.93 with varying La concentration in the range from 15 to 33 mol%. The dielectric constants of the films vary form 340 to 870 with varying La concentration in the range form 15 to 33 mol%. Hysteresis loop becomes slimmer with the increase of La concentration form 15 to 28mol% and little fatter again with the increase of La concentration form 28 to 33 mol%. Among the films investigated in this research, PLT(28) thin film shows the best dielectric properties for the application to the dielectrics of ULSI DRAM's. At the frequency of 100Hz, the dielectric constant and the loss tangent of PLT(28) thin films are 940 and 0.08 respectively. Its leakage current density at 1.5${\times}10^{5}$V/cm is 1${\times}10^{-6}A/cm^{2}$. The comparision between the simulated and the experimental curves for the switching transient characteristics shows that PLT (28) thin films behaves like normal dielectrics.

• 보존과학연구
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• 통권30호
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• pp.93-102
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• 2009

This study was carried out to investigate the effect of artificial accelerated ageing treatment on the permanence of lining papers produced from Korea and Japan. As time gone by, organic cultural properties are affected by chemical and physical deterioration because of various factors including the conditions of preservation environment and their material properties. In the public historical storage or owned as private collections, are vulnerable to sever amages caused by poor preservation environment as well as by other natural factors. In this study, the deterioration behaviors of lining paper in optical & mechanical properties were discussed. Overall, lining papers produced from Korea showed lower reduction in mechanical strength properties compared to the lining papers produced from Japan.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.92-92
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• 2011

IZTO and ITO thin films with a thickness of 200nm were deposited on Corning glass substrate to investigate the effects of substrate temperature on their electrical and optical properties by using pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt.%, ZnO 15 wt.%, SnO2 15 wt.%) and ITO (In2O3 90 wt.%, SnO2 10 wt.%). We investigated the structural, electrical, and optical properties of IZTO and ITO films. The structural and electrical properties of both films are sensitive on the substrate temperature. As the substrate temperature is increased, the electrical resistivity of ITO films is improved, but that of IZTO film increase over than $100^{\circ}C$. All IZTO and ITO thin films have good optical properties, which showed an average of transmittance over 80%. As a result, IZTO films can be a possible material for flexible display due to the low processing temperature.

• 한국재료학회지
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• 제27권7호
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• pp.353-358
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• 2017

Recycled cenosphere, which is a hollow shaped particle from fly ash, has become attractive as a building material due to its light weight and excellent heat insulation and soundproof properties. In this paper, we investigated the effect of cenosphere size on the physical and optical properties. High brightness of cenosphere as raw material is required for a wide range of ceramics applications, particularly in fields of building materials and industrial ceramic tiles. Cenospheres were sorted by particle size; the microstructure was analyzed according to the cenosphere size distribution. Cenospheres were generally composed of quartz, mullite, and amorphous phase. Colour measurement corresponding to chemical composition revealed that the contents of iron oxide and carbon in the cenospheres were the major factors determining the brightness of the cenospheres.

• 한국재료학회지
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• 제19권5호
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• pp.259-264
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• 2009

In this study we investigated the effect of the multi-step texturing process on the electrical and optical properties of hydrogenated Al-doped zinc oxide (HAZO) thin films deposited by rf magnetron sputtering. AZO films on glass were prepared by changing the $H_2/(Ar+H_2)$ ratio at a low temperature of $150^{\circ}C$. The prepared HAZO films showed lower resistivity and higher carrier concentration and mobility than those of non-hydrogenated AZO films. After deposition, the surface of the HAZO films was multi-step textured in diluted HCl (0.5%) for the investigation of the change in the optical properties and the surface morphology due to etching. As a result, the HAZO film fabricated under the type III condition showed excellent optical properties with a haze value of 52.3%.

• 한국안광학회지
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• 제5권2호
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• pp.201-205
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• 2000

혼합색에 의한 착색 렌즈의 칼라는 감산혼합 법칙을 따르며 착색 렌즈 평가는 광흡수의 특성과 칼라분석에 의한다. Yellow(x)-Blue(1-x) 칼라 렌즈의 광흡수 특성은 500 nm 이하 단 파장에서 황색에 의해(x) 의존하고 550~650 nm 영역 흡수는 청색에 의존하며, 이 흡수 band는 전이금속의 ion화에 의한 peak이다. CIE system인 $L^*a^*b^*$에 의해 분석한 Yellow(x)-Blue(1-x) 칼라 렌즈의 color 특성은 x가 작아질수록 $+a^*$쪽으로 이동하였고 모두 +0.6이내 존재해 채도가 낮은 순수 칼라를 형성하였다.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.373-376
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• 2009

In this paper we report upon an investigation into the effect of DC bias voltage on the electrical and optical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_{2}O_{3}$. we investigated sample properties of bias voltage change in 0 to -60 V. We were able to achieve as low as $5.89{\times}10^{-4}{\Omega}cm$ and transmittance over 88 %. without substrate heating.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.481-484
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. These crystals were obtained by lowering the quartz ampoule for growth in the furnace and growth rate at optimum condition is 0.4mm/hr. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes together with their overtones and combinations were observed. Optical properties were investigated by photoluminescence at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undoped-lnSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution.

• 한국세라믹학회지
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• 제53권5호
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• pp.563-567
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• 2016

The structural properties of $HfO_2$ films could be improved by thermal treatment owing to their crystallization. We deposited $HfO_2$ films on sapphire by radio frequency (RF) magnetron sputtering, whose base vacuum pressure was lower than $4.5{\times}10^{-6}$ Pa, RF power was 100 W, working temperature was $200^{\circ}C$, working pressure was 3 mTorr, and the density of the active gas (Argon) was 20 sccm. After depositing the $HfO_2$ films, the samples were thermally treated by rapid thermal annealing (RTA) in $O_2$ ambient at different temperatures. Subsequently, the measured physical properties (structural, morphological, and optical) indicated that the crystallite size, refractive index at a wavelength of 632 nm, and packing density increased with rising temperatures. In particular, an $HfO_2$ film thermally treated at $800^{\circ}C$ in $O_2$ ambient had the highest refractive index of 2.0237 and packing density of 0.9638. The relation between optical and structural properties was also analyzed.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.641-646
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• 2011

Ga-doped ZnO-$SnO_2$ (ZSGO) films were deposited by rf magnetron sputtering and their structural and electrical properties were investigated. In order to fabricate the target for sputtering, the mixture of ZnO, $SnO_2$ (1:1 weight ratio) and $Ga_2O_3$ (3.0 wt%) powder was calcined at $800^{\circ}C$ for 1 h. The substrate temperature was varied from room temperature to $300^{\circ}C$. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The optical transmittances of the films were measured and the optical energy band gaps were obtained from the absorption coefficients. The resistivity variation with substrate temperature was measured. Auger electron spectroscopy was employed to find the atomic ratio of Zn, Sn, Ga and O in the film deposited at room temperature. ZSGO films exhibited the optical transmittance in the visible region of more than 80% and resistivity higher than $10\;{\Omega}cm$.