• Current Photovoltaic Research
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• v.1 no.1
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• pp.38-43
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• 2013

$Cu(In,Ga)_3Se_5$ is a candidate material for the top cell of $Cu(In,Ga)Se_2$ tandem cells. This phase is often found at the surface of the $Cu(In,Ga)Se_2$ film during $Cu(In,Ga)Se_2$ cell fabrication, and plays a positive role in $Cu(In,Ga)Se_2$ cell performance. However, the exact properties of the $Cu(In,Ga)_3Se_5$ film have not been extensively studied yet. In this work, $Cu(In,Ga)_3Se_5$ films were fabricated on Mo-coated soda-lime glass substrates by a three-stage co-evaporation process. The Cu content in the film was controlled by varying the deposition time of each stage. X-ray diffraction and Raman spectroscopy analyses showed that, even though the stoichiometric Cu/(In+Ga) ratio is 0.25, $Cu(In,Ga)_3Se_5$ is easily formed in a wide range of Cu content as long as the Cu/(In+Ga) ratio is held below 0.5. The optical band gap of $Cu_{0.3}(In_{0.65}Ga_{0.35})_3Se_5$ composition was found to be 1.35eV. As the Cu/(In+Ga) ratio was decreased further below 0.5, the grain size became smaller and the band gap increased. Unlike the $Cu(In,Ga)Se_2$ solar cell, an external supply of Na with $Na_2S$ deposition further increased the cell efficiency of the $Cu(In,Ga)_3Se_5$ solar cell, indicating that more Na is necessary, in addition to the Na supply from the soda lime glass, to suppress deep level defects in the $Cu(In,Ga)_3Se_5$ film. The cell efficiency of $CdS/Cu(In,Ga)_3Se_5$ was improved from 8.8 to 11.2% by incorporating Na with $Na_2S$ deposition on the CIGS film. The fill factor was significantly improved by the Na incorporation, due to a decrease of deep-level defects.

• Journal of Conservation Science
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• v.34 no.2
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• pp.107-118
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• 2018

This report does studied for making the method of conserving bracket murals in Daeungjeon of Jikjisa Temple, through the scientific way. Results of evaluated the conservation status at the braket mural paintings, most serious damage is structural damage like cracks, breakage, and delamination. After optical investigation, a characteristic point wasn't found such as underdrawing or traces of a coat of paint. The ultrasonic examination speed by each wall painting was measured from about 195.8 m/s to 392.7 m/s, according to the location of the surface, and it was able to compare the surface properties according to the location. In Infrared-thermal image measurement shows that wall layer separation and paint layer delamination are closely detected, therefore it was able to judge of damage on the objective way. Material analysis revealed that the walls were made by sand and weathering soil. The wall layer combined sand with less than fine sand size by nearly 5:5, and the finishing layer was found to have mixed medium sand and fine sand at approximately 6:4 rates. However, In case of finishing layer, mixing ratios of sizes less than very fine sand were found to be significantly lower than wall. Therefore, it is estimated that the plysical damage such as the separation between the layers of the walls created in the braket mural paintings, is continuously caused by changes in the internal stresses and volume ratio caused by the density differences between the wall and the finishing layers.

• Journal of the Korean Applied Science and Technology
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• v.33 no.1
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• pp.67-74
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• 2016

The Prussian Blue Analogue(PBA) has three dimensional structure and the metal - organic framework material, and it has a variety configurations depending on the type of organic ligands. PBA has been receving an attention in the fields of biosensors, optical, catalytic, and hydrogen storage device. Also, it is an environmental friendly substance with a chemical stability. In addition, PBA is widely used in the filed of adsorption art since we can adjust the size of the fine pores. In this study, we synthesized $Mn_3[Fe(CN)_6]_2$, an organometallic framework chains by using a hydrothermal synthesis method. We used $K_4[Fe(CN)_6]$ and $MnCl_2$ as precursors. We also produced a manganese iron oxide, by baking the synthesized material. The effect of the size and shape of the particles was examined by controling pH of the precursor solution, the molar concentration of the precursor, and reaction time as the experimental variables. Synthesized absorbent was analyzed by XRD, SEM, FT-IR, UV-Vis, and TG / DTA to evaluate the adsorption properties of several dyes.

• Restorative Dentistry and Endodontics
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• v.33 no.3
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• pp.213-223
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• 2008

The objective of this study was to compare dentin shear bond strength (DSBS) of dentin bonding agents (DBAs) cured with a plasma arc (PAC) light curing unit (LCU) and those cured with a light emitting diode (LED) LCU. Optical properties were also analyzed for Elipar freelight 2 (3M ESPE); LED LCU, Apollo 95E (DMT Systems); PAC LCU and VIP Junior (Bisco); Halogen LCU. The DBAs used for DSBS test were Scotchbond Multipurpose (3M ESPE), Singlebond 2 (3M ESPE) and Clearfil SE Bond (Kuraray). After DSBS testing, fractured specimens were analyzed for failure modes with SEM. The total irradiance and irradiance between 450 nm and 490 nm of the LCUs were different. LED LCU showed narrow spectral distribution around its peak at 462 nm whereas PAC and Halogen LCU showed a broad spectrum. There were no significant differences in mean shear bond strength among different LCUs (P > 0.05) but were significant differences among different DBAs (P < 0.001)

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.486-493
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• 2003

Schottky type A $l_{0.33}$G $a_{0.67}$N ultraviolet photodetectors were fabricated on the MOCVD grown AlGaN/ $n^{＋}$-GaN and AlGaN/AlGaN interlayer/ $n^{＋}$-GaN structures. The grown layers have the carrier concentrations of -$10^{18}$, and the mobilities were 236 and 269 $\textrm{cm}^2$/V.s, respectively. After mesa etching by ICP etching system, the Si3N4 layer was deposited for passivation between the contacts and Ti/AL/Ni/Au and Pt were deposited for ohmic and Schottky contact, respectively. The fabricated Pt/A $l_{0.33}$G $a_{0.67}$N Schottky diode revealed a leakage current of 1 nA for samples with interlayer and 0.1$\mu\textrm{A}$ for samples without interlayer at a reverse bias of -5 V. In optical measurement, the Pt/A $l_{0.33}$G $a_{0.67}$N diode with interlayer showed a cut-off wavelength of 300 nm, a prominent responsivity of 0.15 A/W at 280 nm and a UV-visible extinction ratio of 1.5x$10^4./TEX>.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1008-1014
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• 2001

Nanosize YIG powders added by Cerium which is exellent element in magneto-optical effect were synthesized by Sol-Gel method using Ethylene Glycol solvent. In 120 to 150 minute reaction time, stable sol solution which showed no change in viscosity, pH, and aging time was obtained. Monolithic YIG was synthesized at 80$0^{\circ}C$ with DTA and XRD measurement and its lattice parameter had a tendency to increase from 12.3921 $\AA$. Increasing annealing temperature from 80$0^{\circ}C$ to 105$0^{\circ}C$, average particle size was in the range of 40 nm to 330 nm. Saturation magnetization (M$_{s}$) value was increased from 18.37 to 21.25 emu/g due to enhancement of YIG crystallity and decreasing of orthoferrite phase. On the other hand, coercivity (H$_{c}$) value increased up to 90$0^{\circ}C$ and then decreased above 90$0^{\circ}C$. With increasing Ce addition, coercivity was almost not changed but saturation magnetization value was maximum at Ce 0.1 mol% and then decreased because of increasing a orthoferrite amount. Also, curie temperature (T$_{c}$) of YIG were not changed with Ce addition.ion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• Korean Chemical Engineering Research
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• v.49 no.4
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• pp.400-404
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• 2011

Many studies on polydiacetylene(PDA) have been investigated to apply to chemical and biological sensors due to their unique optical properties of color change from blue to red and fluorescence change from non-fluorescence to red fluorescence. Especially, high sensitivity against specific molecules is very important to apply polydiacetylenes to various sensors. In this study, we examined the effect of sensitivity enhancement of 10,12-pentacosadynoic acid(PCDA) vesicles in detection ${\alpha}$-cyclodextrin(CD) according to control of vesicle size by filters with different pore sizes and polymerization temperature. Colorimetric response(CR) was calculated using visible spectrometer. In order to investigate the effect of vesicle size on sensitivity of PDA vesicles, two PCDA vesicles were filtered without filtration and with 0.22 ${\mu}m$ filter. The two PCDA vesicles were polymerized at $25^{\circ}C$ and were incubated with ${\alpha}$-CD(5 mM) for 30 min. The CRs of the former and latter vesicles were 31.4% and 74.0%, respectively. Then, two PCDA vesicles filtered with 0.22 ${\mu}m$ filter were polymerized at $25^{\circ}C$ and $5^{\circ}C$ and were reacted with ${\alpha}$-CD(5 mM) for 30 min to examine the effect of polymerization temperature. The CRs of the former and latter vesicles were 74.0 and 99.2%, respectively. This suggests that vesicle sizes and polymerization temperature are key factors in enhancing the sensitivity of PDA vesicles. In addition, these results are expected to be useful to apply the PDA vesicles as biosensors to detect DNA, protein, and cells.

• Journal of the Korean Chemical Society
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• v.55 no.2
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• pp.208-217
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• 2011

The effects of pH and temperature on the removal of two dyes (neutral red; NR and malachite green oxalates; MG) from aqueous effluents using Maghnia montmorillonite clay in a batch adsorption process were investigated. The results showed the stability of the optical properties of MG in aqueous solution and adsorbed onto clay under wide range of pH 3-9. However, the interaction of NR dye with clay is accompanied by a red shift of the main absorption bands of monomer cations under pH range of 3-5, whereas, those of neutral form remains nearly constant over the pH range of 8-12. The optimal pH for favorable adsorption of the dyes, i.e. ${\geq}$90% has been achieved in aqueous solutions at 6 and 7 for NR and VM respectively. The most suitable adsorption temperatures were 298 and 318 K with maximum adsorption capacities of 465.13mg/g for NR and 459.89 mg/g for MG. The adsorption equilibrium results for both dyes follow Langmuir, Freundlich isotherms. The numerical values of the mean free energy $E_a$ of 4.472-5.559 kj/mol and 2.000-2.886 kj/mol for NR and MG respectively indicated physical adsorption. Various thermodynamic parameters, such as ${\Delta}H^{\circ}$, ${\Delta}S^{\circ}$, ${\Delta}G^{\circ}$ and Ea have been calculated. The data showed that the adsorption process is spontaneous and endothermic. The sticking probability model was further used to assess the potential feasibility of the clay mineral as an alternative adsorbent for organic ion pollutants in aqueous solution.