• Title/Summary/Keyword: Optical Properties

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Electro-optical Properties of Polymer Dispersed Liquid Crysta Displays (고분자 분상형 액정표시소자의 전기광학적 특성 연구)

  • 박우상;고영부;박세근
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.10
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    • pp.885-890
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    • 1998
  • The electro-optical properties of polymer dispersed liquid crystals (PDLCs) depend on dispersion structures and nematic alignment which can be controlled by taking proper liquid crystal/polymer mixtures and process conditions. To achieve excellent electro-optical properties such as low driving voltage, good contrast ratio and negligible hysteresis, we have developed optimization procedure. Under the optimized conditions, PDLC of low threshold voltage less than 3.1 V, high contrast ratio more than 150 and negligible hysteresis were obtained.

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Relationship between Optical Properties Analyzed by Photoluminance of Bonding Structure Analyzed by X-ray Diffractometer (XRD 분석에 의한 결정구조와 PL 분석에 의한 광학적 특성의 상관성)

  • Oh, Teresa
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.1
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    • pp.70-75
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    • 2016
  • GZO films prepared on ITO glasses were annealed at various temperatures in a vacuum condition to research the relationship between oxygen vacancies and optical properties. GZO films after annealing in a vacuum showed the various optical-chemical properties depending on the annealing temperatures and oxygen gas flow rate during the deposition. The oxygen vacancy of GZO film prepared by oxygen gas flows of 22 sccm increased with increasing the annealing temperatures, because of the extraction of oxygen by the annealing. But the intensity of photoluminance of GZO with 22 sccm decreased in accordance with the annealing temperature, because of the reduction of ionized charge carriers. The oxygen vacancy by the extraction of oxygen enhanced a depletion, so the widen depletion had the strong Schottky barrier and the PL intensity due to the low carrier density decreased.

The Optical Properties of WO$_3$Thin Films Deposited by RF Magnetron Reactive Sputtering (RF 마그네트론 반응성 스퍼터링법으로 증착된 WO$_3$박막의 광특성)

  • 이동규;최영규;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.339-342
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    • 1997
  • The optical properties of WO$_3$thin films deposited by RF magnetron reactive sputtering were studied. The substrate was an ITO(indium-tin-oxide) glass(100$\Omega$/ ). The optical properties are examined by different deposition conditions. RF power, substrate temperature, $O_2$concentraction. Ar flow rate, working pressure and thickness are 40~60W, 25~30$0^{\circ}C$, 10%, 54~72sccm, 5~20m7orr and 1200~2400$\AA$, respectively. All these films were colorless, light yellow and found to be amorphous in structure by X-ray diffraction analysis. When RF power, substrate temperature, $O_2$concentraction, Ar flow rate, working pressure and thickness are 40W, $25^{\circ}C$, 10%, 72sccm, 20mTorr and 2400$\AA$, respectively the values of transmittance of the WO$_3$thin films in visible region are about 80%.

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Electrical and Optical properties of ZnO:Al films with Heat treatment (열처리 조건에 따른 ZnO:Al 박막의 전기적 광학적 특성)

  • Lee, Dong-Jin;Lee, Jae-Hyeong;Sun, Ho-Jung;Lee, Jong-In;Jong, Dong-Su;Song, Jun-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.133-134
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    • 2007
  • We have studied the structural and electrical, optical properties of Al doped ZnO(AW) thin films which were fabricated by If reactive magnetron sputtering method with various heat treatment conditions. The heat temperatures of specimen fabrication were comning 7059 glass is $200{\sim}500^{\circ}C$ and Polyimide films are $200{\sim}350^{\circ}C$ respectively. The variations of the electrical and optical properties with heat treatment temperature and ambient were studied.

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A Study of Physical and Optical Properties of GaN grown using In-situ SiN Mask by MOCVD (In-situ SiN Mask를 이용하여 성장한 GaN 박막의 물성적, 광학적 특성 연구)

  • Kim, Deok-Kyu;Jeong, Jong-Yub;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.121-124
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    • 2004
  • We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition(MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum(FWHM) decreased from 480 arcsec to 409 arcsec. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GgN layer.

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Optimal Design of Vibration Isolation System in Optical Disc Drives (광디스크 드라이브의 방진계 최적설계)

  • 이은경;이기성;장헌탁;임경화
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2001.11b
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    • pp.961-966
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    • 2001
  • The schematic design process is formulated to develop the vibroisolating rubber mount in optical disc drives. The dynamic model of vibration isolation system is established by using a rigid body with 6 degree of freedom and linear springs with damping property. Considering the practical vibration condition of DVDP(Digital Versatile Disk Player), the required properties of vibroisolating rubber mounts are investigated. Also finite element model of a vibroisolating rubber mount is used to obtain shape design concept and identify the characteristics of a rubber mount which satisfies the required properties from previous design stage. Finally the evaluation method of dynamic properties of vibroisolating rubber mounts is established by utilizing modal test method. Based on the developed process, vibroisolating rubber mounts with a good performance have been developed.

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Effect of the Gamma-Ray Irradiation on the Electric and Optical Properties of SrTiO3 Single Crystals

  • Lee, Y.S.;Lim, Junhwi;Kim, E.Y.;Bu, Sang Don
    • Journal of the Korean Physical Society
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    • v.73 no.10
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    • pp.1566-1570
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    • 2018
  • We investigated the visible emission property of $SrTiO_3$ (STO) single crystals irradiated with gammy-ray (${\gamma}$-ray) at various total doses up to 900 kGy. The electric and optical absorption properties of the irradiated STO samples were hardly changed with the ${\gamma}$-ray irradiation, compared with those of un-irradiated STO. In contrast, the visible emission near 550 nm increased with the ${\gamma}$-ray dose increasing. While the development of the visible emission was indicative of the increase of oxygen vacancies inside STO by the ${\gamma}$-ray irradiation, the newly generated oxygen vacancies were not significantly harmful to the electric and optical properties of STO. We concluded that the STO single crystal should have a good tolerance against the damage by the ${\gamma}$-ray irradiation.

Influence of Ag thickness on properties of AZO/Ag/AZO Multi-layer Thin Films (AZO/Ag/AZO 다층박막의 Ag두께에 따른 특성 연구)

  • Yeon, Je ho;Kim, Hong Bae
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.2
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    • pp.27-31
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    • 2017
  • AZO/Ag/AZO multi-layer films deposited on glass substrate by RF magnetron sputtering and thermal evaporator have a much better electrical properties than Al-doped ZnO thin films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. The optimum thickness of Ag layers was determined to be $90{\AA}$ for high optical transmittance and good electrical conductivity. The Ag layers thickness $90{\AA}$ is an optical transmittance greater than 80% of visible light and the obtained multilayer thin film with the low resistivity of $8.05{\times}10-3{\Omega}cm$ and the low sheet resistance $5.331{\Omega}/sq$. Applying to TCO and Solar electrode will improve efficiency.

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Influence of Sputter Power on the Structural and Optical Properties of CdS Films for Photovoltaic Applications (태양전지용 CdS 박막의 구조적, 광학적 물성에 미치는 스퍼터 전력 효과)

  • Lee, Jae-Hyeong;Lim, Dong-Gun;Yang, Kea-Joon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.4
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    • pp.322-327
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    • 2006
  • CdS films have been prepared on polycarbonate, polyethylene terephthalate, and Coming 7059 substrates by r.f magnetron sputtering technique at room temperature. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the influence of the sputter power on the structural and optical properties of these films was evaluated. The XRD measurements revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase, regardless of substrate types. As the sputter power was increased from 75 to 150 Watt, the structure of CdS films was converted from the mixed of hexagonal and cubic phase to hexagonal phase. The morphology of CdS films is found to be continuous and dense. Also, the grain of CdS films is larger with increasing the sputter power. The average transmittance exceeded 80 % in the visible spectrum for all films and decreases slightly with the sputter power.

Properties of ITO/Cu/ITO Multilayer Films for Application as Low Resistance Transparent Electrodes

  • Kim, Dae-Il
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.5
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    • pp.165-168
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    • 2009
  • Transparent and conducting ITO/Cu/ITO multilayered films were deposited by magnetron sputtering on unheated polycarbonate (PC) substrates. The thickness of the Cu intermediate film was varied from 5 to 20 nm. Changes in the microstructure and optoelectrical properties of ITO/Cu/ITO films were investigated with respect to the thickness of the Cu intermediated layer. The optoelectrical properties of the films were significantly influenced by the thickness of the Cu interlayer. The sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm films had a sheet resistance of $36{\Omega}$/Sq. and an optical transmittance of 67% (contain substrate) at a wavelength of 550 nm, while the ITO 50 nm/Cu 20 nm/ITO 30 nm films had a sheet resistance of $70{\Omega}$/Sq. and an optical transmittance of 36%. The electrical and optical properties of ITO/Cu/ITO films were determined mainly by the Cu film properties. From the figure of merit, it is concluded that the ITO/Cu/ITO films with a 5 nm Cu interlayer showed the better performance in transparent conducting electrode applications than the conventional ITO films.