• Analytical Science and Technology
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• v.25 no.6
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• pp.370-374
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• 2012

As for quality evaluation of paper records, it is very important to measure acidity and moisture in paper. In the case important paper records, it should be measured directly in field. But ISO standard analytical method would be limited to measure directly in field for quality evaluation of paper records until now. Therefore it could be to use mobile small NIR spectrometer for being analyzed by direct and non-invasive method in field. The wavelength range of small spectrometer has from 900 to 1700 nm, and the surface of paper could be measured by diffused reflected optical fiber probe. Thus, the acidity and moisture could be analyzed on the paper record with from 1970 to 2003. As the result, it could be confirmed to have each more than 0.9 as the correlation of acidity and moisture. Thus, it will be possible to develope the evaluation system of paper record with mobile small NIR spectrometer and optical fiber by the result.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.9
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• pp.589-593
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• 2014

AlNO multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. $Al_2O_3$/AlNO(LMVF)/AlNO(HMVF)/Al/substrate of 4 multi-layer has been prepared in an Ar and ($N_2+O_2$) gas mixture, and $Al_2O_3$ of top layer is anti-reflection layer on double AlNO(LMVF)/AlNO(HMVF) layers and Al metal of infrared reflection layer. In this study, the roughness and surface properties of AlNO thin films were estimated by field emission scanning electron microscopy(FE-SEM). The grain size of AlNO thin films increased with increasing sputtering power. The composition of thin films has been systematically investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The absorptance of AlNO films shows the increasing trend with swelling ($N_2+O_2$) gas mixture in HMVF and LMVF deposition. The excellent optical performance showed above 98% of absorptance in visible wavelength region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.568-573
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• 2011

AZO (Al doped ZnO) thin films were deposited on the quartz substrates with thickness variation from 25 to 300 nm by using PLD (pulsed laser deposition). XRD (x-ray diffractometer), SPM (scanning probe microscopy), Hall effect measurement and uv-visible spectrophotometer were employed to investigate the structural, morphological, electrical and optical properties of the thin films. XRD results demonstrated that films were preferrentially oriented along the c-axis and crystallinity of film was improved with increase of film thickness. As for the surface morphologies, the mean diameter and root mean square of grains were increased as the film thickness was increased. When the film thickness was 200 nm, the lowest resistivity of $4.25{\times}10^{-4}\;{\Omega}cm$ obtained with carrier concentration of $6.84{\times}10^{20}\;cm^{-3}$ and mobility of $21.4\;cm^2/V{\cdot}S$. All samples showed more than 80% of transmittance in the visible range. Upon these results, it is found that the samples thickness can affect their structural, morphological, optical and electrical properties. This study suggests that the resistivity can be improved by controlling film thickness.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.65-65
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• 2011

Single-well carbon nanotubes (SWNT) have been proposed as a promising candidate for various applications owing to their excellent properties. In particular, their fascinating electrical and mechanical properties could provide a new area for the development of advanced engineering materials. A transparent conductive thin film (TCF) has increased for applications such as liquid crystal displays, touch panels, and flexible displays. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. But, a bundle of CNTs has different electrical properties than their individual counterparts. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance on PET substrates is researched. Arc-discharge SWNTs were dispersed in deionized water by adding sodum dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate at $100^{\circ}C$. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then treated with ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. Results, we show that 97 ${\Omega}$/> sheet resistance can be achieved with 81% transmittance at the wavelength of 550 nm. The changes in electrical and optical conductivity of SWNT film before and after ionic doping treatments were discussed.

• Journal of The Korean Astronomical Society
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• v.47 no.6
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• pp.293-302
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• 2014

Simultaneous time monitoring observations of $H_2O$ $6_{16}-5_{23}$, SiO J = 1-0, 2-1, 3-2, and $^{29}SiO$ ${\upsilon}=0$, J = 1-0 lines are carried out in the direction of the Mira variable star TX Cam with the Korean VLBI Network single dish radio telescopes. For the first time, the $H_2O$ maser emission from TX Cam is detected near the stellar velocity at five epochs from April 10, 2013 (${\phi}=3.13$) to June 4, 2014 (${\phi}=3.89$) including minimum optical phases. The intensities of $H_2O$ masers are very weak compared to SiO masers. The variation of peak antenna temperature ratios among SiO ${\upsilon}=1$, J = 1-0, J = 2-1, and J = 3-2 masers is investigated according to their phases. The shift of peak velocities of $H_2O$ and SiO masers with respect to the stellar velocity is also investigated according to observed optical phases. The $H_2O$ maser emission occurs around the stellar velocity during our monitoring interval. On the other hand, the peak velocities of SiO masers show a spread compared to the stellar velocity. The peak velocities of SiO J = 2-1, and J = 3-2 masers show a smaller spread with respect to the stellar velocity than those of SiO J = 1-0 masers. These simultaneous observations of multi-frequencies will provide a good constraint for maser pumping models and a good probe for investigating the stellar atmosphere and envelope according to their different excitation conditions.

• Journal of Astronomy and Space Sciences
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• v.33 no.3
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• pp.177-183
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• 2016

Active galactic nuclei (AGN) are too compact to be resolved by any existing optical telescope facility, making it difficult to understand their structure and the emission processes responsible for their huge energy output. However, variability, one of their characteristic properties, provides a tool to probe the inner regions of AGN. Blazars are the best candidates for such a study, and hence a considerable amount of effort is being made to investigate variability in these sources across the electromagnetic spectrum. Here, using the Mt. Abu infrared observatory (MIRO) blazar monitoring program, we present intra-night, inter-night, and long term aspects of the variability in S5 0716+71, 3C66A, and OJ 287. These stars show significant variability on short (a few tens of mins, to a few hours, to a few days) to long term (months to years) timescales. Based on the light travel time argument, the shortest variability timescales (micro-variability) provide upper limits to the size of the emission region. While S5 0716 shows a very high duty cycle of variability (> 80 %), 3C66A shows a much lower intra day variability (IDV) duty cycle (< 20 %). All three show rapid variations within 2.5 to 3.5 hr, which, perhaps, are generated near the vicinity of black holes. Assuming this, estimates of the masses of the black holes are made at ~10⁹, 8×10⁸, and 2.7×10⁹ M_⨀ for S5 0716+71, 3C66A, and OJ 287, respectively. Multi-wavelength light-curves for the blazar PKS 1510-089 are discussed to infer the emission processes responsible for the recent flaring episodes in this source.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.255-255
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• 2011

Zinc oxide based thin films have been extensively studied in recent several years because they have very interesting properties and zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technologies don't completely satisfy the industrial requirements. In the present work, we studied effect of the deposition parameters on the structure and properties of ZnO films deposited by DC arc plasmatron. The varied parameters were gas flow rates, precursor composition, substrate temperature and post-deposition annealing temperature. Vapor of Zinc acetylacetone was used as source materials, oxygen was used as working gas and argon was used as the cathode protective gas and a transport gas for the vapor. The plasmatron power was varied in the range of 700-1500 watts. Flow rate of the gases and substrate temperature rate were varied in the wide range to optimize the properties of the deposited coatings. After deposition films were annealed in the hydrogen atmosphere in the wide range of temperatures. Structure of coatings was investigated using XRD and SEM. Chemical composition was analyzed using x-ray photoelectron spectroscopy. Sheet conductivity was measured by 4-point probe method. Optical properties of the transparent ZnO-based coatings were studied by the spectroscopy. It was shown that deposition by a DC Arc plasmatron can be used for low-cost production of zinc oxide films with good optical and electrical properties. Increasing of the oxygen content in the gas mixture during deposition allow to obtain high-resistive protective and insulation coatings with high adhesion to the metallic surface.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.111.1-111.1
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• 2012

Interest in flexible transparent conducting films (TCFs) has been growing recently mainly due to the demand for electrodes incorporated in flexible or wearable displays in the future. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance on PET substrates is researched Arc-discharge SWNTs were dispersed in deionized water by adding sodium dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then was doped with Au-ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. This was confirmed and discussed on the XPS and UPS studies. We show that 87 ${\Omega}/{\Box}$ sheet resistances with 81% transmittance at the wavelength of 550nm. The changes in electrical and optical conductivity of SWNT film before and after Au-ionic doping treatments were discussed. The effect of Au-ion treatment on the electronic structure change of SWNT films was investigated by Raman and XPS.

• Journal of IKEEE
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• v.17 no.2
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.652-657
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• 2015

We have investigated the properties of Al-doped ZnO (AZO) thin films as functions of atomic layer deposition (ALD) oxidants. AZO transparent conducting oxides (TCOs) layer was deposited by ALD with adding trimethylaluminum (TMA) and diethylzinc (DEZn). AZO films were deposited at low temperature with $H_2O$ and $O_3$ as oxidants. Electrical, optical and structural properties of AZO thin films were investigated by 4-point probe, Hall effect measurement, UV-VIS, and AFM. Microstructure and atomic bonding states were investigated by HRXRD and XPS. The resistivity of AZO films grown using $H_2O$ was lower than the films grown using $H_2O$ and $O_3$, by approximately two orders of magnitude. The differences in oxygen vacancy peak intensity of AZO films were correlated to the optical and electrical properties.