• 제목/요약/키워드: Optical Probe

검색결과 598건 처리시간 0.03초

색소 농도에 따른 형광 광자의 계수율 : 광자 검출기의 dead time 효과 (Fluorescence photon counting rate as a function of dye concentration: Effect of dead time of photon detector)

  • 고동섭
    • 한국광학회지
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    • 제8권4호
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    • pp.353-355
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    • 1997
  • 공초점 형광 현미경과 단일 광자 계수기로 구성되어 있는 단일 분자 검출장치를 사용하여, 색소 농도에 따른 광자 계수율의 변화를 관측하였다. 농도가 증가함에 따라 계수율이 포화하는 경향을 보였으며, 광검출기의 죽은 시간을 고려하여 측정 결과를 설명하였다. 계수율과 검출 부피, 광검출기의 양자효율, 입사 광량 사이의 관계를 나타내는 관계식을 제시하였다. 또한 신호대 잡음비에 대해서도 간략하게 논하였다.

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Al, Ga, In이 도핑된 ZnO 기반의 투명 전도막 제작

  • 김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.138-138
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    • 2009
  • Al, Ga and In doped ZnO thin film were prepared by faing targets sputtering as a function of oxygen gas contents at R.T. Base pressure was $2{\times}10^{-6}torr$, and working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe (Chang-min), a Hall Effect measurement (Ecopia) and an UV/VIS spectrometer (HP). The minimum resistivities of AZO, GZO and IZO thin film were $6.5{times}10^{-4}[{\Omega}-cm],5.5{\times}10^{-4}[{\Omega}-cm]$ and $4.29{\times}10^{-4}[{\Omega}-cm]$. The average transmittance of over 80% was seen in the visible range.

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혼합가스 분위기 중에서 공업용 순 타이타늄의 고온산화 거동 (High-Temperature Oxidation Behavior of Commercial Pure Titanium in Mixed Gases)

  • 박성호;안용식
    • 동력기계공학회지
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    • 제11권2호
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    • pp.44-50
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    • 2007
  • The oxidation behavior of commercial pure titanium is investigated in the temperature range of $727^{\circ}C{\sim}950^{\circ}C$ in mixed gases. The weight change is measured by TGA during oxidation in mixed gases. The oxidation behavior indicated by weight gain or the growth of oxide layer is based on the linear rate law at high temperatures. The structure of the oxide scale formed during oxidation is analysed by optical microscopy, electron probe microanalyzer, scanning electron microscope and x-ray diffraction. Oxide scales have a $TiO_2$ structure, and are constituted with multi-layered or two layered porous external one and a dense internal one. Ti-O solid solution region is formed at the interface of metal and scale layer. The formation of oxide scale is influenced by the oxidation temperature, time, crystal structure and the condition of atmosphere.

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정보저장기기와 생물학적 정보저장 매커니즘 비교 (Information Storage Devices and Biological Mechanism of Information Storage)

  • 이승엽;김경호;양우성;박영필
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2002년도 추계학술대회논문집
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    • pp.582-587
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    • 2002
  • Current information storage devices, such as HDD, CD/DVD-ROM/RW, probe-based memory and hologram memory, are compared with biological information storage mechanisms in DNA and brain memory. Newly developed approaches to overcome the limit of storage capacity are introduced in both magnetic and optical recording devices. Linear and areal density of information stored in the biological and mechanical storages are compared for the applications and developments of new storage devices.

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Ni 첨가가 볼밀링한 MoSi$_2$분말성형체의 소결속도에 미치는 영향 (The Effect of Ni Addition on the Sintering Kinetics of Ball-milled Mosi$_2$ Powder Compacts)

  • 최선호;홍경태;김영도;문인형
    • 한국분말재료학회지
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    • 제5권4호
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    • pp.241-249
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    • 1998
  • Sintering kinetics of ball-milled $MoSi_2$ was studied with the addition of Ni. $MoSi_2$ powder with the average particle size of 1 $\mu\textrm{m}$ was obtained from ball-milling of 10 $\mu\textrm{m}$ powder. Small amount of Ni was added to the ball-milled $MoSi_2$ powder by salt solution and reduction method. The powder was compacted into cylindrical shape at 200 MPa and isothermally sintered in a $H_2$ atmosphere at the temperature range of 1100~$1400^{\circ}C$ for 3~600 minutes. The changes of linear shrinkage and sintered density were monitored as a function of sintering time. The microstructure was observed by using optical microscopy and scanning electron microscopy. Phases were identified by X-ray diffratometer and electro-probe micro analysis. Sintering kinetics of Ni-added powder was compared to as-milled powder and the apparent activation energy was calculated from Arrhenius plot.

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상용전원 평행판전극 방전장치에서 수소플라스마의 가시광선스펙트럼 (Visible Light Spectrum of H2 Plasma Generated a Commercial Electric Power in the Parallel Plate Reactor)

  • 최운상;지택상;강성수
    • 한국안광학회지
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    • 제4권1호
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    • pp.15-20
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    • 1999
  • 상용전원을 사용한 평행판전극 방전장치에서 수소플라스마로부터 방사되는 가시광선의 스펙트럼을 분광기로 조사하였다. 기체압력과 방전전력에 따라 수소플라스마로부터 방사되는 가시광선의 세기를 조사하고, 같은 조건에서 탐침으로 플라스마밀도를 측정하여 가시광선의 세기와 비교하였다. 측정결과, 가시광선의 세기는 플라스마의 밀도에 영향을 받으며, 플라스마 밀도는 기체압력과 방전전력에 영향받았다.

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Nanoscale Charge Transport in P3HT:PCBM:Gold Nanoparticle Composite Materials for Polymer Solar Cell Application

  • Nguyen, Thuc-Quyen;Dante, Mark;Peet, Jeffrey;Bazan, Guillermo
    • 한국고분자학회:학술대회논문집
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    • 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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    • pp.274-274
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    • 2006
  • Recently, conjugated polymer solar cells have attracted a great deal of attention. In this work, we applied the various scanning probe techniques to characterize composite materials typically used to fabricate polymer solar cells: poly-3(hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and P3HT/PCBM/Au nanoparticle (NP) samples. The latter is studied due to the idea of using the gold NP surface plasmon to enhance the optical absorption of the composite films. AFM is used to characterize the film morphology whereas conducting AFM is used to study the charge transport properties at the nanoscale. We found that there is a direct correlation between the nanoscale charge transport measurements and the device efficiencies.

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Polarity Probing Two-Photon Fluorophores Based on [2.2]Paracyclophane

  • Woo, Han-Young;Korystov, Dmitry;Jin, Young-Eup;Suh, Hong-Suk
    • Bulletin of the Korean Chemical Society
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    • 제28권12호
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    • pp.2253-2260
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    • 2007
  • A series of tetra donor substituted [2.2]paracyclophane-based two-photon absorption (TPA) fluorophores were synthesized in neutral and cationic forms. The imaging activity of overall set of fluorophores was studied by the two-photon induced fluorescence (TPIF) method in a range of solvents. We also measured a clear progression toward a longer photoluminescence lifetime with increasing solvent polarity (intrinsic photoluminescence lifetime, τi: ~2 ns in toluene → 12-16 ns in water). The paracyclophane fluorophores with this unique property can be utilized as an optical polarity probe for the biomolecular substrates. The combined measurement of the two-photon fluorescence microscopy (TPM) cell image and TPIF lifetime can give us a better understanding of the biological processes and local environments in the cells.

Ar/Cl$_2$ 유도결합플라츠마 식각 후 SBT 박막의 전기적 특성 (Electrical Properties of SBT Thin Films after Etching in Cl$_2$/Ar Inductively Coupled Plasma)

  • 이철인;권동표;깅창일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.58-61
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    • 2002
  • SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.

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대향타겟스퍼터법으로 증착된 ZnO : Al 박막의 전기적 광학적 특성 (Electrical and optical properties of ZnO : Al thin films deposited by Facing Targets Sputtering)

  • 양진석;성하윤;금민종;박용욱;가출현;김경환
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 C
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    • pp.1478-1480
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    • 2001
  • ZnO : Al transparent conductive thin films were prepared by facing targets sputtering system with a DC power supply which can deposit a high quality thin films and control deposition condition in all range of $O_2$ gas ratio using ZnO target containing 8 at% of Al. Sputtering was carried out at a substrate temperature of R T with a DC current of 0.6 A and $O_2$ flow rate of 0 $\sim$ 0.9. The characteristics of ZnO : Al thin films was investigated by $\alpha$-step, four point probe, X-ray diffraction and UV/VIS spectrometer.

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