• Title/Summary/Keyword: Operating value of sensor

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Expandable Flash-Type CMOS Analog-to-Digital Converter for Sensor Signal Processing

  • Oh, Chang-Woo;Choi, Byoung-Soo;Kim, JinTae;Seo, Sang-Ho;Shin, Jang-Kyoo;Choi, Pyung
    • Journal of Sensor Science and Technology
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    • v.26 no.3
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    • pp.155-159
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    • 2017
  • The analog-to-digital converter (ADC) is an important component in various fields of sensor signal processing. This paper presents an expandable flash analog-to-digital converter (E-flash ADC) for sensor signal processing using a comparator, a subtractor, and a multiplexer (MUX). The E-flash ADC was simulated and designed in $0.35-{\mu}m$ standard complementary metal-oxide semiconductor (CMOS) technology. For operating the E-flash ADC, input voltage is supplied to the inputs of the comparator and subtractor. When the input voltage is lower than the reference voltage, it is outputted through the MUX in its original form. When it is higher than the reference voltage, the reference voltage is subtracted from the input value and the resulting voltage is outputted through the MUX. Operation of the MUX is determined by the output of the comparator. Further, the output of the comparator is a digital code. The E-flash ADC can be expanded easily.

[ $NO_2$ ] Gas Sensing Characteristics of Carbon Nanotubes (탄소 나노튜브를 이용한 이산화질소 감지 센서의 특성)

  • Lee R. Y.
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.3 s.36
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    • pp.227-233
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    • 2005
  • Carbon nanotubes (CNT) which were grown, on the alumina substrate with a pair of comb-type Au electrodes, by plasma enhanced chemical vapor deposition have been investigated for $NO_2$ gas sensor. The electrical resistance of CNT film decreased with temperature, indicating a semiconductor type of CNT, and also the resistance of CNT sensor decreased with increasing $NO_2$ concentration. Upon exposure to $NO_2$ gas, the electrical resistance of CNT film sensor rapidly decreased within 3 minutes, and then showed a constant value after $20\~30$ minutes. It is found that the sensitivity of CNT sensor has been improved by air oxidation. The CNT sensor oxidized at $450^{\circ}C$ for 30 minutes showed higher sensitivity value than that without oxidation by $27\%$, even for a low 250 ppb $NO_2$ concentration at operating temperature of $200^{\circ}C$. But it needs a recovery time more than 20 minutes for reuse after detection of $NO_2$ gas.

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Capacitance Fuel Sensor for Commercial Vehicle Software Verification Through R-BENCH TOOL (R-BENCH TOOL을 이용한 상용차용 정전용량 방식의 연료 센서의 소프트웨어 검증 평가)

  • Kim, Sang Woo;Lee, Ju Hyoung;Son, Jung Hyun;Lee, Soo Ho;Lee, Duck Jin
    • Transactions of the KSME C: Technology and Education
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    • v.2 no.1
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    • pp.1-8
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    • 2014
  • Recently vehicle development trend changes from machinery vehicle to the electrical and electronic devices. As well the electrical and electronic devices commercial vehicles are increasing more than machinery system. The capacitance fuel sensor is a sensor that, by measuring the capacitance value of fuel level sensor MCU operating for the final voltage value of the signal output. That is increasing durability and fuel measurement accuracy more than conventional ceramic resistor type. For Sensor software verification R-BENCH TOOL generated test case automatically. We make the programmable Capacitor board for test. And it was confirmed that more than 98% of the high reliability of the software.

The effect of Pd activator and annealing temperatures on the response characteristecs of the ${SnO_2}/{Al_2}{O_3}$gas sensor (Pd활성제와 열처리 온도에 의한 ${SnO_2}/{Al_2}{O_3}$ 가스센서에 미치는 감응효과)

  • Jeon, Chun-Saeng
    • Korean Journal of Materials Research
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    • v.4 no.3
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    • pp.295-300
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    • 1994
  • This paper is aimed to study the effect of Pd activator, the annealing temperature, and operating temperatures on the response characteristics of the $SnO_2/Al_2O_3$ sensor. The resistance of device has shown minimum value when annealing temperature and operating temperature of device are $550^{\circ}C$ and $350^{\circ}C$ respectively in ethanol gas. And the response characteristics of the device showed the best results when lwt% Pd was added to SnOz especially in low concentration of ethanol gas.

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Design of CMOS Temperature Sensor Using Ring Oscillator (링발진기를 이용한 CMOS 온도센서 설계)

  • Choi, Jin-Ho
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.19 no.9
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    • pp.2081-2086
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    • 2015
  • The temperature sensor using ring oscillator is designed by 0.18㎛ CMOS process and the supply voltage is 1.5volts. The temperature sensor is designed by using temperature-independent and temperature-dependent ring oscillators and the output frequency of temperature-independent ring oscillator is constant with temperature and the output frequency of temperature-dependent ring oscillator decreases with increasing temperature. To convert the temperature to a digital value the output signal of temperature-independent ring oscillator is used for the clock signal and the output signal of temperature-dependent ring oscillator is used for the enable signal of counter. From HSPICE simulation results, the temperature error is less than form -0.7℃ to 1.0℃ when the operating temperature is varied from -20℃ to 70℃.

Study on the Building Method of a Sensor Network based on BLE Beacons with WPTS (WPTS BLE 비콘 기반 센서 네트워크 구축 방안 연구)

  • Jang, Ho-Deok
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.15 no.1
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    • pp.8-13
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    • 2022
  • This paper investigates the method to implement a RF (Radio Frequency) energy harvesting sensor node and to build a sensor network using a CATV network and a leaky coaxial cable. The power supply of a sensor node is designed with the WPTS (Wireless Power Transfer System) receiver operating at 915MHz. A sensor network has limited coverage by the loss of RF signal at a wireless transmission link. The paper proposes to build a sensor network that the BLE signal of a sensor and the signal of a WPTS power transmitter are transmitted through a coaxial cable of a CATV network by utilizing WOC (WiFi over Coax) technology and radiates at a leaky coaxial cable. The length of a leaky coaxial cable and the total loss of a wire link are allowed to the point that the RSSI of a sensor node is more than the minimum value (-78dBm) and lead to extend wireless coverage.

Assessment of Insulation Condition in Operating Large Turbine Generator (운전중인 대형 터빈발전기에서 절연상태 평가)

  • 김희동
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.6
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    • pp.324-329
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    • 2004
  • Six stator slot couplers(SSC) and a flux probe sensor installed on the stator winding slots of large turbine generator. Assessment of insulation condition has been based upon the measurements of partial discharge(PD) of stator windings and shorted-turn of rotor windings in operating large turbine generator. The maximum PD magnitude(Qm), normalized quantify number(NQN), PD pattern and shorted-turn were measured using on-line insulation condition monitoring system. The NQN and Qm of slot PD side in the phase A are indicated the highest value in six SSC sensors. Monitoring system results showed that discharge at conductor surface and internal discharge were detected at the surface of stator winding and in voids of the groundwall insulation. Insulation of stator and rotor windings in large turbine generator was judged to be in good condition.

Fabrication and Characterization of Floating-Gate MOSFET with Multi-Gate and Channel Structures for CMOS Image Sensor Applications (다중 Gate 및 Channel 구조를 갖는 CMOS 영상 센서용 Floating-Gate MOSFET 소자의 제작 및 특성 평가)

  • Ju, Byeong-Gwon;Sin, Gyeong-Sik;Lee, Yeong-Seok;Baek, Gyeong-Gap;Lee, Yun-Hui;Park, Jeong-Ho
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.1
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    • pp.17-22
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    • 2001
  • The floating-gate MOSFETs were fabricated by employing 1.5 m n-well CMOS process and their optical-electrical properties were characterized for the application to CMOS image sensor system. Based on the simulation of energy band diagram and operating mechanism of parasitic BJT were proposed as solutions for the increase of photo-current value. In order to realize them, MOSFETs having multi-gate and channel structures were fabricated and 60% increase in photo-current was achieved through enlargement of depletion layer and parallel connection of parasitic BJTs by channel division.

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A Study on Voltammetry System Design for Realizing High Sensitivity Nano-Labeled Sensor of Detecting Heavy Metals (중금속 검출용 고감도 나노표지센서 구현을 위한 볼타메트리 시스템 설계 연구)

  • Kim, Ju-Myoung;Rhee, Chang-Kyu
    • Journal of Powder Materials
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    • v.19 no.4
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    • pp.297-303
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    • 2012
  • In this study, voltammetry system for realizing high sensitivity nano-labeled sensor of detecting heavy metals was designed, and optimal system operating conditions were determined. High precision digital to analog converter (DAC) circuit was designed to control applied unit voltage at working electrode and analog to digital converter (ADC) circuit was designed to measure the current range of $0.1{\sim}1000{\mu}A$ at counter electrode. Main control unit (MCU) circuit for controlling voltammetry system with 150 MHz clock speed, main memory circuit for the mathematical operation processing of the measured current value and independent power circuit for analog/digital circuit parts to reduce various noise were designed. From result of voltammetry system operation, oxidation current peaks which are proportional to the concentrations of Zn, Cd and Pb ions were found at each oxidation potential with high precision.

MAGFET Hybrid IC with Frequency Output (주파수 출력을 갖는 MAGFET Hybrid IC)

  • Kim, Si-Hon;Lee, Cheol-Woo;Nam, Tae-Chul
    • Journal of Sensor Science and Technology
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    • v.6 no.3
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    • pp.194-199
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    • 1997
  • When voltage or current gets out of the magnetic sensor as it is, we have often faced the problems such as introduction of noise and loss of voltage. In order to reduce these problems, a 2 drain MAGFET operating in the saturation region and fabricated by CMOS process, the system of I/V converter, VCO with operational amplifier, and V/F conversion circuits with Schmitt Trigger are designed and fabricated in one package. The absolute sensitivity of magnetic sensor shows 1.9 V/T and the product sensitivity is $3.2{\times}10^{4}\;V/A{\cdot}T$. The characteristic of V/F conversion is very stabilized and has the value of 190 kHz/T.

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