• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.961-968
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• 2003

In order to reach the high electrical quality of organic thin film transistors (OTFTs) such as high mobility and on-off current ratio, it is strongly desirable to study the enhancement of electrical properties in OTFTs. Here, we report the novel method of hydrogen plasma treatment to improve electrical properties in inverted staggered OTFTs based on pentacene as active layer. To certify the effect of this method, we compared the electrical properties of normal device as a reference with those of device using the novel method. In result, the normal device as a reference making no use of this method exhibited a field effect mobility of 0.055 $\textrm{cm}^2$/Vs, on/off current ratio of 10$^3$, threshold voltage of -4.5 V, and subthreshold slope of 7.6 V/dec. While the device using the novel method exhibited a field effect mobility of 0.174 $\textrm{cm}^2$/Vs, on/off current ratio of 10$\^$6/, threshold voltage of -0.5 V, and subthreshold slope of 1.49 V/dec. According to these results, we have found the electrical performances in inverted staggered pentacene TFT owing to this method are remarkably enhanced. So, this method plays a key role in highly improving the electric performance of OTFTs. Moreover, this method is the first time yet reported for any OTFTs.

• The Journal of Asian Finance, Economics and Business
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• 제8권1호
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• pp.45-52
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• 2021

The capital structure is one of the hot financial topics among researchers and scholars. Its importance comes from the fact that capital structure is closely related to companies' ability to meet different stakeholders' needs. A suitable capital structure will boost the business and create a competitive advantage in the context of fierce competition. Many companies choose an optimal debt level based on the trade-off between interest and debt costs. This study aimed to test the existence of trade-off theory in capital structure, the case of Vietnam's real estate companies, which are growing very fast recently. Instead of considering constant optimal leverage to test the trade-off model, we take advantage of the dynamic capital structure determined by growth opportunities, profitability, tax incentives, tangibility, liquidity, and firm size. The dynamic panel data regression was estimated by the system Generalized Method of Moment (Sys-GMM). The empirical evidence showed that real estate companies listed in the Vietnamese stock market might change their leverage toward a target capital structure determined by influential factors in a long-term perspective. In particular, the debt-to-asset ratio will change by approximately 14 percent, positively, in response to the difference between the current debt-to-asset ratio and the dynamic target debt-to-asset ratio.

• International journal of advanced smart convergence
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• 제1권1호
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• pp.61-64
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• 2012

The ultraviolet and visible light responsive properties of the amorphous indium gallium zinc oxide thin film transistor have been investigated. Amorphous indium gallium zinc oxide (a-IGZO) thin film transistor operate in the enhancement mode with saturation mobility of $6.99cm^2/Vs$, threshold voltage of 13.5 V, subthreshold slope of 1.58 V/dec and an on/off current ratio of $2.45{\times}10^8$. The transistor was subsequently characterized in respect of visible light and UV illuminations in order to investigate its potential for possible use as a detector. The performance of the transistor is indicates a high-photosensitivity in the off-state with a ratio of photocurrent to dark current of $5.74{\times}10^2$. The obtained results reveal that the amorphous indium gallium zinc oxide thin film transistor can be used to fabricate UV photodetector operating in the 366 nm.

• Journal of Electrical Engineering and Technology
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• 제9권5호
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• pp.1654-1659
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• 2014

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

• Journal of Electrical Engineering and Technology
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• 제9권5호
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• pp.1527-1536
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• 2014

This paper investigates the optimal values of turn-on and turn-off angles, and ratio of flux linkage at turn-off angle and peak phase current positions of optimal control for accomplishing maximum output power in an 8/6 Switched Reluctance Generator (8/6 SRG). Phase current waveform is analyzed to determine optimal excitation angles (optimal turn-on and turn-off angles) of the SRG for maximum output power which is applied from a nonlinear magnetization curve in terms of control variables (dc bus voltage, shaft speed, and excitation angles). The optimal excitation angles in single pulse mode of operation are proposed via the analytical model. Simulated and experimental results have verified the accuracy of the analytical model.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.190-190
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• 2007

To improved the conjugation between $SiO_2$ and P3HT active layer, P3HT/POSS conjugated polymers were synthesised and used as the active layers of organic TFT's. We achieved the field-effect mobilities in the saturation region ${\sim}1.19{\times}10^{-3}\;[cm^2/v{\cdot}sec]$ and on/off ratio ${\sim}2.51{\times}10^2$. These values are higher than ones of the P3HT-based OTFTs. The results also demonstrated the off-current decrease.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.207-207
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• 2008

ZnO is one of the widely utilized n-type semiconducting oxide materials in the field of optoelectronic devices. For its application to the fabrication of promising ultraviolet (UV) photodetectors, ZnO with various structures has been extensively studied. However, study on the photodetectors using zero-dimensional (0-D) ZnO nanoparticle is scarce while the 0-D nanoparticle structure has many advantages compared to the other dimensional structures for absorption of light. In this study, the photocurrent characteristics of ZnO nanoparticles were investigated through a simply pasting of the nanoparticles across the pre-patterned electrodes. Then the photoluminescence (PL) characteristic, photocurrent response spectrum, photo- and dark-current and photoresponse spectrum were investigated with a He-Cd laser and an Xe lamp. An dominant PL peak of the ZnO nanoparticles was located at the wavelength of 380 nm under the illumination of 325-nm wavelength light. The ratio of photocurrent to dark current (on/off ratio) is as high as 106 which is considerable value for promising photodetectors. On the other hand, the time constants in photoresponse were relatively slow. The reasons of the high on/off ratio and relatively slow photoresponse characteristic will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.87-88
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• 2006

Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly-Si TFTs performance. Transfer characteristics of p-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of 2-30 ${\mu}m$ has been investigated. In this paper, we analyzed the data of p-type TFTs. We studied threshold voltage ($V_{TH}$), on/off current ratio ($I_{ON}/I_{OFF}$), saturation current ($I_{DSAT}$), and transconductance ($g_m$) of p-channel poly-Si thin film transistors with various channel lengths and widths.

• 대한전자공학회논문지SD
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• 제46권4호
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• pp.21-27
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• 2009

본 연구에서는 고온에서 Schottky barrier SOI nMOS 및 pMOS의 전류-전압 특성을 분석하기 위해서 Er 실리사이드를 갖는 SB-SOI nMOSFET와 Pt 실리사이드를 갖는 SB-SOI pMOSFET를 제작하였다. 게이트 전압에 따른 SB-SOI nMOS 및 pMOS의 주된 전류 전도 메카니즘을 온도에 따른 드레인 전류 측정 결과를 이용하여 설명하였다. 낮은 게이트 전압에서는 온도에 따라 열전자 방출 및 터널링 전류가 증가하므로 드레인 전류가 증가하고 높은 게이트 전압에서는 드리프트 전류가 감소하여 드레인 전류가 감소하였다. 고온에서 ON 전류가 증가하지만 드레인으로부터 채널영역으로의 터널링 전류 증가로 OFF 전류가 더 많이 증가하게 되므로 ON/OFF 전류비는 감소함을 알 수 있었다. 그리고 SOI 소자나 bulk MOSFET 소자에 비해 SB-SOI nMOS 및 pMOS의 온도에 따른 문턱전압 변화는 작았고 subthreshold swing은 증가하였다.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.