• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.358-361
• /
• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• Applied Chemistry for Engineering
• /
• v.29 no.6
• /
• pp.789-798
• /
• 2018

The role of empirical equation to predict the performance of polymer electrolyte membrane fuel cell is important. The activation, ohmic and mass transfer losses were separated in a polarization curve, and the curve fitting according to each region was performed using Kim's model and Hao's model. Changes of each loss were compared according to operation variables of the temperature, pressure, oxygen concentration and membrane thickness. The existing model showed a good fitting convergence, but less fitting accuracy in the separated loss region. A new model using the convergence coefficient was suggested to improve the accuracy of performance prediction of fuel cells of which results were demonstrated.

• Korean Journal of Metals and Materials
• /
• v.48 no.6
• /
• pp.565-569
• /
• 2010

We report on the characteristics of indium-oxide-doped ZnO (IZO) ohmic contact to p-GaN. The IZO ohmic contact layer was deposited on p-GaN by a Roll-to-Roll (RTR) sputter method. IZO contact film with a thickness of 360, 230 and 100 nm yielded an ohmic contact resistance of $4.70{\times}10^{-4}$, $5.95{\times}10^{-2}$, $4.85{\times}10^{-1}\;{\Omega}cm^{2}$ on p-GaN when annealed at $600{^{\circ}C}$ for 1 min under a nitrogen ambient, respectively. While the transmittance of IZO film with a thickness of 360 nm slightly increased in the wavelength range of 380-800 nm after annealing, the transmittance rapidly increased up to 80% after annealing at $600{^{\circ}C}$ in the wavelength range of 380~430 nm because the crystallization of IZO film and created Ga vacancies near the p-GaN surface region were affected by the annealing. These results indicate that ohmic contact resistance and transmittance of the IZO films improved.

• The Transactions of the Korean Institute of Electrical Engineers B
• /
• v.51 no.3
• /
• pp.107-115
• /
• 2002

This parer presents the analysis of hot gas flow in puffer-type circuit breakers using FVFLIC method. For the analysis of arc-flow interaction, the flow field is analyzed from the equations of conservation for mass, momentum and energy with the assumption of local thermodynamic equilibrium state. The arc is represented as the energy source term composed of ohmic heating and radiation term in the energy conservation equation. Ohmic heating is computed by the electric field analysis only within the conducting plasma region. An approximate radiation transport model is employed for the evaluation of emission and absorption of the radiation. The analysis method was applied to the real circuit breaker model and simulation results such as pressure rise and arc voltage were compared with the experimental ones.

• Electrical & Electronic Materials
• /
• v.10 no.9
• /
• pp.945-951
• /
• 1997

Inorder to investigated electrical conduction characteristics of silicone oils due to viscosity variation we studied the electrical conduction properties at temperature range of 10~110[$^{\circ}C$] and electrical field from 1 to 1.33$\times$10$^4$[V/cm] The viscosity of used specimens was low viscous(1, 2, 5[cSt]) silicone oils. It was shown the ohmic conduction characteristics in low temperature and low field by Ion dipole and humidity included specimen. And we known the conduction mechanism due to electron injection by Schottky's effect in the high temperature an d high field region.

• Journal of the Optical Society of Korea
• /
• v.2 no.1
• /
• pp.13-21
• /
• 1998

Based on the escape cone concepts, high-brightness light-emitting diodes (LEDs) have been analyzed. In AlGaAs or InGaAlP LEDs, photon absorption in the ohmic region under the electrode is known to be significant. Thus, ins general, a thick window layer (WL) and a transparent substrate (TS) would minimize photon shielding by the electrodes and considerably improve photon output coupling efficiency. However, the schemes do not seem to be necessary in InGaN system. Photon absorption in ohmic contact to a wide bandgap semiconductor such as GaN may be negligible and, as a result, the significant photon shielding by the electrodes will not degrade the photon output coupling efficiency so much. The photon output coupling efficiency estimated in InGaN LEDs is about 2.5 - 2.8 times that of the conventional high-brightness LED structures based on both WL and TS schemes. As a result, the extenal quantum efficiency in InGaN LEDs is as high as 9% despite the presumably very low internal quantum efficiency.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
• /
• v.3B no.3
• /
• pp.115-121
• /
• 2003

This paper proposes a radiation model, which considers radiation transport as an important component in hot gas analysis. This radiation model is derived from combining the method of partial characteristics (MPC) with net emission coefficient (NEC), and it covers the drawbacks of existing models. Subsequently, using this proposed model, the arc-flow interaction in an arcing chamber can be efficiently computed. The arc is represented as an energy source term composed of ohmic heating and the radiation transport in the energy conservation equation. Ohmic heating term was computed by the electric field analysis within the conducting plasma region. Radiation transport was calculated by the proposed radiation model. Also, in this paper, radiation models were introduced and applied to the gas circuit breaker (GCB) model. Through simulation results, the efficiency of the proposed model was confirmed.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.39 no.2
• /
• pp.175-182
• /
• 1990

In order to investigate the conduction characteistics of the biaxially oriented polypropylene film, several measurements have been carried out in the range of temperature between 5['c] and 25['c] as well as the field intensity between 10[MV/m] and 300[MV/m]. The whole range of the characteristics observed at 15['c] appears to be divided into five regions` the Ohmic conduction region due to ionic carrier below 40[MV/m], the region from 40[MV/m] to 70[MV/m] in which the conduction mechanism is attributed to Poole-Frenkel effect, the region from 70[MV/m] to 82[MV/m] in which the negative resistance characteristics are observed, then the region from 82[MV/m] which is dominated by Schottky effect and finally, the region from 240[MV/m] up to the point where dielectric breakdown occurs in which the mechanism is based on Flowler-Nordheim theory.

• 전기의세계
• /
• v.26 no.5
• /
• pp.83-89
• /
• 1977

This paper described the minority carrier lifetime in Si epitaxial layer, and also the voltage (V) versus current (I) characteristics of high resistivity Si epitaxial layer0substrate junction. The measured lifetime in Si epi-layer was much shorter than in bulk, and the temperature dependence of lifetime was found to agree well with Shockley-Read model of recombination which applies to high resistivity n-type materials. The V-I curve showed; an ohmic region (I.var.V), a sublinear region (I.var.V$^{1}$2/), a space charge limited current region (I.var.V$^{2}$), and finally a negative resistance region. We investigated these phenomena by the theory of the relaxation semiconductor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1991.10a
• /
• pp.40-43
• /
• 1991

The low-voltage ZnO varistor fabricated by a new method with three-composition seed grain are studied. The knee voltage about 5V$\_$0.5[A/$\textrm{cm}^2$]/ for sample #7 among the various samples are observed, and activation energy in the obmic region and trap level in the double sohottky region for each samples are 0.359∼0.450eV and 0.553∼0.620eV, respectively. It is concluded that the change of knee voltage may be caused by trap level in double sohottky region rather than activation energy in the ohmic region.