• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.2
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• pp.45-52
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• 2009

The off-state impedance of LED signal head is greater than that of a traditional bulb signal head, and the traffic controller has inherent off-state output leakage current. These two characteristics make the field trouble and reduce signal safety when the LED signal head is installed with traffic controller. In this Paper, a complement method of the LED signal head and traffic controller local standard (220vac line voltage) for improving signal safety is suggested. The point of designed complement method is to reduce the output leakage current of the traffic controller under 3mA, to increase the voltage feedback threshold to $70{\pm}5V$, and to make LED signal head maintain off-state in 0-95vac with 10Kohm maximum impedance.

• Journal of Electrical Engineering and Technology
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• v.10 no.6
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• pp.2240-2248
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• 2015

The integration of the large-scale wind power brings great challenge to the stability of the power grid. This paper investigates and studies the fault on May 14, 2012 of the large-scale cascading trip-off of wind turbines in North China. According to the characteristics of the voltage variation, the fault process is divided into three stages: the pre-event stage, the critical stage before cascading, and the cascading stage. The scenes in the fault are reproduced, using the full-size actual power system model. Simulation models of double-fed induction generators (DFIGs) and SVCs including protection settings and controller strategies are carefully chosen to find out the reason of voltage instability in each stage. Some voltage dynamic that have never been observed before in the faults of the same kind are analyzed in detail, and an equivalent voltage sensitive dynamic model of DFIG is proposed for the fast computation. The conclusions about the voltage dynamics are validated by the actual PMU observation evidence.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.4
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• pp.178-184
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• 2005

In this paper, using diplexer structure and varactor diode controlled by reverse bias voltage for diplexer switch gives possibilities to improve isolation and current characteristics. 1 have newly designed switch with high isolation by application varactor diode corresponding to capacitor of diplexer. The low-pass filter for proposed tunable diplexer passes the microwave signal in the bandwidth for wireless cellular network systems and high-pass filter passes it in the bandwidth for wireless personal communication services (PCS) network systems. As the capacitance of the low-pass filter increases, the cut-off frequency can be moved to low frequency, so that the switch is on state in cellular bandwidth and off state in the PCS bandwidth, in contrast to, as the capacitance for attenuation characteristic of high-pass filter increases, it can be moved to high frequency, so that the switch is off state and on state in the cellular bandwidth. it is possible to improve isolation and current consumption characteristics by application diplexer design methods and varactor diode. 1 expect that the tunable diplexer circuit and design methods should be able to find applications on MMIC and low temperature copired ceramic (LTCC).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38B no.10
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• pp.832-842
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• 2013

Cognitive Radio has attracted intensive interests of the researchers, recently. The data rate always increases in the emerging technologies. The increased data rate poses mainly two challenges for spectrum sensing. One is that the state of primary user (PU) is fast and alternatively varying between "on/off" in a spectrum sensing window. The other is that the asynchronicity among the reports in a cooperative spectrum sensing setting becomes more apparent. Both of them would deteriorate the spectrum sensing performance. Thus, we propose an asynchronous cooperative spectrum sensing method to cope with these two challenges. A likelihood ratio test based spectrum sensing is developed for a single cooperator. The likelihood ratio is obtained in the setting of fast varying PU state. The likelihood ratio test is uniformly powerful according to the Neyman-pearson lemma. Furthermore, the asynchronicity among the cooperators are studied. Two sets of fusion weights are discussed for the asynchronous time among cooperators. One is designed based on the condition probability of the PU state variation and the other one is designed based on the queueing theory. The simulation results are provided with different fusion methods. The performance improvements are demonstrated.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.801-802
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• 1992

Poly Si TFTs have been fabricated from low temperature annealed a-Si films. I-V and C-V characteristics in the off-state region were measured. Analytical model for the leakage current in the off-state was suggested. In the measurement, capacitance increased abruptly with Increasing gate and drain voltage. This phenomena is attributed to the leakage current.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.9 no.3
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• pp.173-178
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• 2009

We have investigated the electrical properties of oxide metal thin film device. The device has been fabricated top-top electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of oxide metal thin film device. Fabricated oxide metal thin film device with MIM structure is changed from a low conductive Off-state to a high conductive On-state by the external linear voltage sweep. The $Si/SiO_2/MgO$ device is switched from a high resistance state to a low resistance state by forming. Consequently, we believe oxide metal is a promising material for a next-generation nonvolatile memory and other electrical applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.190-193
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• 2010

Various power semiconductor devices have been developed and evolved since 1950s. Among them, IGBT is the most developed power semiconductor device which has high breakdown voltage, high current conduction and suitable switching speed which perform trade-offs between each other. In other words, there are trade-offs between a breakdown voltage and on-state voltage drop, and between on-state voltage drop and turn-off time. In this paper, the new structure is proposed to improve a trade-off between a breakdown voltage and on-state voltage drop. The proposed structure has a trench collector and this trench collector induces an accumulation layer at the bottom of an n-drift region during off-state. And this accumulation layer prevents expansion of depletion layer so that trapezoidal electric field distribution is performed in the n-drift region. As a result of this, breakdown voltage is increased without increasing on-state voltage drop. The electrical characteristics of the proposed IGBT is analyzed and optimized by using representative device simulator, TSUPREM4 and MEDICI. After optimization, the electrical characteristics of the proposed IGBT is compared with NPT IGBT which have the same device thickness. As a result of this, it can be confirmed that the proposed structure increases the breakdown voltage of 800 V than that of the conventional NPT IGBT without increasing the on-state voltage drop.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.11 no.6
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• pp.9-14
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• 2011

We have investigated the electrical properties of $AlO_x$ thin film device. The device has been fabricated top-bottom electrode structure and its transport properties are measured in order to study the resistance change. Electrical properties with linear voltage sweep on a electrodes are used to show the variation of resistance of $AlO_x$ thin film device. Fabricated $AlO_x$ thin film device with MIM structure is changed from a high conductive On-state to a low conductive Off-state by the external linear voltage sweep. It is found that the initial resistance of the $AlO_x$ thin film is low-resistance On state and reversible switching occurs. Consequently, we believe $AlO_x$ thin film is a promising material for a next-generation nonvolatile memory and other electrical applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1073-1077
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. The I-V, breakdown voltage, and turn-off delay time of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. For proton irradiated device, the breakdown voltage and the on-state voltage were 733 V and 1.85 V which were originally 749 V and 1.25 V, respectively. The turn-off time has been reduced to 170 ns, which was originally $6{\mu}s$ for the un-irradiated device. The proton irradiated device was superior to e-beam irradiated device for the breakdown voltage and the on-state voltage which were 698 V and 1.95 V, respectively, nevertheless turn-off time of proton irradiated device was reduced to about 60 % compared to that of the e-beam irradiated device.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.67-72
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• 2021

MANET(Mobile Ad Hoc Network) is the structure in which a source node communicates with a destination node by establishing a route with neighbor nodes without using the existing wired or wireless network. Therefore, the routing protocol for MANET must correspond well to changes in the channel state of moving nodes, and should have simple operation, high reliability, and no routing loop. In this paper, the simulation was perform by using a traffic model with on/off two states provided by the NS-3 network simulator. Also, the duration of the ON state and the duration of the OFF state used the traffic where inter arrival time of data is irregular by generating random values with constant, exponential distribution, and Pareto distribution. The performance of the DSDV, OLSR, and AODV protocols was compare and analyzed using the generated traffic model.