• EDISON SW 활용 경진대회 논문집
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• 제3회(2014년)
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• pp.275-285
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• 2014

Dipyrene-based fluorescent chemosensor(분자 1)가 개발되었다. 분자 1은 여러 금속이온 중 $Cu^{2+}$와 $Hg^{2+}$의 fluorescent chemosensor로서 센싱할 수 있고, excimer-switch off mechanism에 따라 $Cu^{2+}$와 $Hg^{2+}$ 금속이온을 감지한다. Ground state와 excited state에 대한 DFT와 TD-DFT 방법을 통해 분자 1의 $Hg^{2+}$에 대한 형광 turn on/off을 확인하고, 구조변화에 따른 molecular orbital을 계산하였다. 계산결과 분자 1은 excited state에서 excimer를 형성할 수 있으나 $1+Hg^{2+}$는 excimer를 형성하지 못함을 알 수 있었다. 여기서 우리는 분자 1과 $Hg^{2+}$ 금속이온 결합에 대하여 실험값과 비교 분석하여 그 메커니즘 조사하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권3호
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• pp.132-138
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• 2005

In this paper a DPDT(Double-Pole Double Through) switch with defected ground structure(DGS) is proposed. The equivalent circuit for the proposed switch structure is derived according to based on equivalent circuit of proposed DGS unit structure. The equivalent circuit parameters of DGS unit are extracted by using the circuit analysis method. The on/off operation of the proposed switch is obtained by varying the capacitance of the varactor diode at the defected ground plane. In the case of ON state, the insertion loss of the fabricated DPDT was shown under 1dB. And in OFF state, we found the rejection characteristic over 20dB at the designed frequency 2.45GHz. The experimental results show excellent insertion loss at on state and isolation at off state.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.14-15
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• 2007

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. The proton irradiation was carried out at 5.56 MeV energy from the back side of processed wafers and at 2.39 MeV energy from the front side of the wafers. The on-state and off-state I-V characteristics and switching properties of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. The proton irradiated device by 5.56 MeV energy was superior to e-beam irradiated device for the on-state and off-state I-V characteristics, nevertheless turn-off time of proton irradiated device was superior to that of the e-beam irradiated device.

• Tribology and Lubricants
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• 제25권2호
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• pp.86-95
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• 2009

Adhesion tests were carried out in order to investigate the effect of temperature on the adhesion behavior between a PMMA film and a fused silica lens in the micro scale. For the tests, a microtribometer system was specially designed and constructed. The pull-off forces on the PMMA film were measured under atmospheric condition as the temperature of the PMMA film was increased from 300 K to 443 K and decreased to 300 K. The contact area between the PMMA film and the lens was observed during the test. The adhesion behavior was changed with the change of the PMMA surface state as the temperature increased. In glassy state below 363 K, the pull-off force did not change with the increase of temperature. In rubbery state from 383 K to 413 K, the pull-off force increased greatly as the temperature increased. In addition, the area of contact was enlarged. In viscous state above 423 K, the fingering instability was observed in the area of contact when the PMMA film contacted with the lens. It was also found that the adhesion behavior can be varied with the thermal history of the PMMA film. The residual solvent in the PMMA film could emerge to the PMMA surface due to the heating and reduced the pull-off force.

• 한국산학기술학회논문지
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• 제8권4호
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• pp.738-742
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• 2007

능동형 평판디스플레이 소자를 제작하기 위해 수소화된 비정질 규소 박막트랜지스터 (a-Si:H TFT)의 상부에 화소전극을 형성하는 과정에 따른 TFT의 특성 변화를 연구하였다. 화소전극 형성 전에 1 pA 수준의 오프상태 전류 및 $10^6$ 이상의 스위칭률을 보이던 TFT에 화소전극 공정을 행하면 오프상태 전류가 10 pA 이상으로 증가하여 소자특성이 악화되었다. 이러한 소자특성의 악화는 SiNx 보호막 표면의 플라즈마 처리로 개선될 수 있었는데, 특히 $N_2$ 플라즈마가 좋은 결과를 보였다. 화소전극 공정에 의해서 누설전류가 증가하는 것은 투명전도막 증착공정 중에 SiNx 보호막 표면에 전하가 축적되어 이에 유도되는 백채널의 캐리어 축적에 기인하는 것으로 추정된다.

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• Asian Pacific Journal of Cancer Prevention
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• 제16권1호
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• pp.345-349
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• 2015

Background: To determine the cut-off values of the preoperative risk of malignancy index (RMI) used in differentiating benign or malignant adnexal masses and to determine their significance in differential diagnosis by comparison of different systems. Materials and Methods: 191 operated women were assessed retrospectively. RMI of 1, 2, 3 and 4; cut-off values for an effective benign or malignant differentiation together with sensitivity, specificity, negative and positive predictive values were calculated. Results: Cut-off value for RMI 1 was found to be 250; there was significant (p<0.001) compatibility at this level with sensitivity of 60%, positive predictive value (PPV) of 75%, specificity of 93%, negative predictive value (NPV) of 88% and an overall compliance rate of 85%. When RMI 2 and 3 was obtained with a cut-off value of 200, there was significant (p<0.001) compatibility at this level for RMI 2 with sensitivity of 67%, PPV of 67%, specificity of 89%, NPV of 89%, histopathologic correlation of 84% while RMI 3 had significant (p<0.001) compatibility at the same level with sensitivity of 63%, PPV of 69%, specificity of 91%, NPV of 88% and a histopathologic correlation of 84%. Significant (p<0.001) compatibility for RMI 4 with a sensitivity of 67%, PPV of 73%, specificity of 92%, NPV of 89% and a histopathologic correlation of 86% was obtained at the cut-off level 400. Conclusions: RMI have a significant predictability in differentiating benign and malignant adnexal masses, thus can effectively be used in clinical practice.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• 한국통신학회논문지
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• 제27권7C호
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• pp.670-676
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• 2002

ATM 망에는 서비스 품질을 보장하기 위한 여러 가지 트래픽 관리 기법이 있다. 이 중 호 수락 제어는 실시간 서비스를 위해 매우 중요한 관리 기법이며 단일 소스 모델로 ON-OFF 모델이 사용되어졌다. 그러나 ON-OFF 모델의 트래픽과 ATM 망에서 실시간 서비스를 위해 이중 GCRA로 제어된 트래픽은 차이가 있다. 따라서 본 논문에서는 이중 GCRA로 제어된 트래픽을 분석하여 삼 상태 최악의 경우 모델(Three-state Worst-case Model: TWM)을 제안하고 최대 지연 변이를 보장해 줄 수 있는 호 수락 제어 방안을 제시한다. 기존의 ON-OFF 모델과 TWM을 실험적으로 비교하고 TWM이 서비스 품질 보장면에서 우수함을 보인다.

• 제어로봇시스템학회논문지
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• 제12권2호
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• pp.101-105
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• 2006

Disk radial runout creates a periodic relative motion between the laser beam spot and tracks formed on an optical disk. While only focus control is activated, the periodic relative motion yields sinusoid-like waves in the tracking error signal, where one cycle of the sinusoid-like waves corresponds to one track. The frequency of the sinusoid-like waves varies depending on the disk rotational speed and the amount of the disk radial runout. If the frequency of the tracking error signal in the off-track state is too high due to large radial runout of the disk, it is not a simple matter to begin track-following control stably. It might take a long time to reach a steady state or tracking control might fail to reach a stable steady state in the worst case. This article proposes a simple method for reducing the relative motion caused by the disk radial runout in the off-track state. The relative motion in the off-track state is effectively reduced by a drive input obtained through measurements of the tracking error signal and simple calculations based on the measurements, which helps reduce the transient response time of the track-following control. The validity of the proposed method is verified through an experiment using an optical disk drive.