• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• 비파괴검사학회지
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• 제36권4호
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• pp.288-294
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• 2016

Flexible ECT (eddy current array) probe를 사용하여 판재 및 용접부에 존재하는 notch 결함을 MS-5800E와 OmniScan MX 장비로 검출능력을 비교하고, 주파수와 lift-off를 변수로 신호의 특성을 비교하고자 하였다. 실험 결과, 500, 1000, 1500 kHz를 사용하였을 때 notch 깊이가 증가할수록 신호의 진폭이 증가하는 것으로 나타났고, lift-off 변화에 따른 신호의 진폭은 선형적으로 감소하였다. 또한 용접부 결함은 probe와 시험체의 접촉면에 밀접한 관계가 있다. Probe와 시험체의 접촉면이 양호한 경우 검출감도가 우수하고 그렇지 않은 경우에는 검출감도가 떨어지는 것을 알 수 있었다.

• 전기전자학회논문지
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• 제25권4호
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• pp.774-777
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• 2021

본 논문은 Charge Trap Flash using Ferroelectric(CTF-F) 구조를 가진 3D NAND Flash Memory gate controllability에 대해 분석했다. Ferroelectric 물질인 HfO₂는 polarization 이외에도 high-k 라는 특징을 가진다. 이러한 특징으로 인해 CTF-F 구조에서 gate controllability가 증가하고 Bit Line(BL)에서 on/off 전류특성이 향상된다. Simulation 결과 CTF-F 구조에서 String Select Line(SSL)과 Ground Select Line(GSL)의 채널길이는 100 nm로 기존 CTF 구조에 비해 33% 감소했지만 거의 동일한 off current 특성을 확인했다. 또한 program operation에서 channel에 inversion layer가 더 강하게 형성되어 BL을 통한 전류가 약 2배 증가한 것을 확인했다.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.912-917
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• 2006

In this paper, Trench emitter electrode IGBT structure is proposed and studied numerically using the device simulator, MEDICI. The breakdown voltage, on-state voltage drop, latch up current density and turn-off time of the proposed structure are compared with those of the conventional trench gate IGBT(TIGBT) structures. Enhancement of the breakdown voltage by 19 % is obtained in the proposed structure due to dispersion of electric field at the edge of the bottom trench gate by trench emitter electrode. In addition, the on-state voltage drop and the latch up current density are improved by 25 %, 16 % respectively. However increase of turn-off time in proposed structures are negligible.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.53-55
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• 2008

복합층에서 나타나는 투과형 펄스와전류(Pulsed Eddy Current; PEC) 탐상신호를 수치해석 방법을 사용하여 예측하고 분석하였다. 공기층이 없는 복합층에서 Ti-6Al-4V의 두께가 변하는 경우에는 Lift-off를 변화시켰을 때 나타나는 펄스와전류 신호특성과 LOI(Lift-off Intersection)가 형성되는 것을 관찰할 수 있었고, Aluminum의 두께가 변하는 경우에는 Aluminum만의 두께변화 시 발생하던 신호특성이 났다. 공기층이 있는 복합층에서는 Lift-off를 변화시켰을 때 나타나는 신호특성과 LOI가 형성되었고, 공기층이 증가하면 피크 값이 감소하는 것을 볼 수 있었다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
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• pp.327-331
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• 2003

This paper proposes a novel ZVZCS-PWM Boost Converter. It enables the main switch to be turned on and off with both zero voltage and zero current and the auxiliary switch to be turned on and off with ZCS, the rectify diode to be turned on and off with ZVS. Moreover, this converter is suitable for not on]y minority carrier device but also majority carrier device. The auxiliary resonant circuit of the proposed boost converter is placed out the main power path, therefore, there are no voltage/current stresses on the main switch and diode. The operation of the proposed boost converter is explained and analyzed theoretical and experimentally, from a prototype operating at 100kHz, with an input voltage rated at 50V.

• 한국멀티미디어학회논문지
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• 제4권3호
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• pp.205-214
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• 2001

As the real time multimedia data service has become available due to the rapid progress of computer and Internet technology, the users can enjoy the newly developed service, which is called Video On-Dem-and(VOD). However, most of service providers have not paid their attention much on the software for various service modes on VOD, but they are only concentrating un the hardware to provide with the high resolution video display. Therefore, the service providers are recently to pay more attention on the software to cope with the various demands of users than hardware. So this paper has designed and implemented the VOD service system for those demands. Since the VOD service system suggested by this paper enable off-line search functions through E-mail, the users can possibly get the necessary information from off-line Search without connecting to the server while the current VOD service can prominently help users to save the time and effort to sea고 and select the Video contents by using periodical current awareness service supported by PUSH technology and user oriented information booking and feedback service supported by SDI service.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.1012-1015
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• 1992

A gate-turn-off thyristor (GTO) that has a fuction of self-commutation is a device that can be turned on like a thyristor with a single pulse of gate current and turned-off by injecting a negative gate current pulse. GTOs have been in existence almost from the beginning of thyristor era, recently are these devices being developed with large power-handling capabilities and improved performance, and they are gaining popularity In conversion equipment. In this paper, the effects of internal parameters of GTO model using a circuit containing two transistors and three resistors the switching operation and the turn-off snubber characteristics is investigated using SPICE program.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2002년도 춘계학술발표회 초록집
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• pp.35-35
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• 2002

Atomic force microscopy was applied to study the formation and growth mechanism of thin chrome layers prepared under various pulse plating conditions. The chrome was electro-deposited from an electrolyte bath containing 250 gl-l of chromic acid, 25 gl-l of sulfuric acid using direct current density of $1.6{\;}mA.$\textrm{mm}^{-2} and pulse currents with on-off time from 5 to 900 ms. The higher current density enhanced nucleation rate which resulted in refining grain size. The chrome growth kinetics determining nodule size and shape significantly depends on the duration of on-time rather than duration of off-time and on/off time ratio.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 Proceedings ICPE 98 1998 International Conference on Power Electronics
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• pp.668-676
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• 1998

A passive energy recovery snubber for high-power-factor boost rectifier, in which the main switch is described in terms of the equivalent circuits that are operational during turn-on and turn-off sequences. These equivalent circuits are analyzed so that the overshoot voltage across the main switch, the snubber current, and the turn-off transition time can be predicted analytically. The main switch combined with proposed snubber can be turned on with zero current and turned off at limited voltage stress. The high-power-factor boost rectifier with proposed snubber is implemented, and the experimental results are presented to confirm the validity of proposed snubber.